A parallel-strip phase inverter with a pair of simple impedance matching networks is designed. The phase inverter introduces the almost frequency independent 180° phase shift and was employed in the wideband parallel-strip balun. The balun was designed and measured with the maximum magnitude imbalance of 0.5 dB and the maximum phase imbalance of 6.0°. The proposed balun is used as input network for the wideband balanced frequency doubler. The proposed frequency doubler achieves significant conversion gain from 0.1 GHz to 1.7 GHz. The frequency doubler achieves 7.4 dB conversion gain and 23 dB fundamental signal suppression at 1 GHz.
{"title":"A Parallel-Strip Balun for Wideband Frequency Doubler","authors":"L. Chiu, Q. Xue","doi":"10.1155/2013/892590","DOIUrl":"https://doi.org/10.1155/2013/892590","url":null,"abstract":"A parallel-strip phase inverter with a pair of simple impedance matching networks is designed. The phase inverter introduces the almost frequency independent 180° phase shift and was employed in the wideband parallel-strip balun. The balun was designed and measured with the maximum magnitude imbalance of 0.5 dB and the maximum phase imbalance of 6.0°. The proposed balun is used as input network for the wideband balanced frequency doubler. The proposed frequency doubler achieves significant conversion gain from 0.1 GHz to 1.7 GHz. The frequency doubler achieves 7.4 dB conversion gain and 23 dB fundamental signal suppression at 1 GHz.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129186432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Pokharel, L. Belostotski, A. Tsuchiya, A. Allam, M. Hashmi
1 Faculty of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan 2Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada T2N 1N4 3Department of Communications andComputer Engineering, Graduate School of Informatics, KyotoUniversity, Kyoto 606-8501, Japan 4Department of Electronics and Communication Engineering, Egypt-Japan University of Science and Technology, Alexandria 21934, Egypt 5 IIIT Delhi, New Delhi 110020, India
{"title":"Advanced RF and Analog Integrated Circuits for Fourth Generation Wireless Communications and Beyond","authors":"R. Pokharel, L. Belostotski, A. Tsuchiya, A. Allam, M. Hashmi","doi":"10.1155/2013/272070","DOIUrl":"https://doi.org/10.1155/2013/272070","url":null,"abstract":"1 Faculty of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, Japan 2Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada T2N 1N4 3Department of Communications andComputer Engineering, Graduate School of Informatics, KyotoUniversity, Kyoto 606-8501, Japan 4Department of Electronics and Communication Engineering, Egypt-Japan University of Science and Technology, Alexandria 21934, Egypt 5 IIIT Delhi, New Delhi 110020, India","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126650150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The duration of rainfall events as a function of precipitation rate is investigated in this paper. The experimental data used in this study were measured along a rain gauge network with 8 pluviographs located in the Amazon region. The most important point to be highlighted in this study is the evidence of a correlation between rain and fade events durations observed in a 12 GHz satellite link. This result is quite important under the engineering point of view, once it can be used in the design of improvement techniques for low availability satellite systems.
{"title":"Rainfall Rate Duration Study for Performance Assessment of Satellite Communication Links","authors":"J.L. Cerqueira, M. S. Assis","doi":"10.1155/2013/209067","DOIUrl":"https://doi.org/10.1155/2013/209067","url":null,"abstract":"The duration of rainfall events as a function of precipitation rate is investigated in this paper. The experimental data used in this study were measured along a rain gauge \u0000network with 8 pluviographs located in the Amazon region. The most important point to be highlighted in this study is the evidence of a correlation between rain and fade events \u0000durations observed in a 12 GHz satellite link. This result is quite important under the engineering point of view, once it can be used in the design of improvement techniques for low availability satellite systems.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129273587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida
This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.
{"title":"CMOS Ultra-Wideband Low Noise Amplifier Design","authors":"K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida","doi":"10.1155/2013/328406","DOIUrl":"https://doi.org/10.1155/2013/328406","url":null,"abstract":"This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"73 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114057870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multipixel cameras represent an emerging topology for arrays receivers, improving speed and accuracy of both security scanning systems and radioastronomical sky surveys by means of a matrix of phased elements. Difficulties in the generation and proper distribution to each pixel of the local oscillator signal still limit their use to frequency ranges below a few GHz or at least seriously affect the complexity of the implementable cameras. This work presents a full comparison between two possible system architectures, alternatively based on LO frequency multiplication or subharmonic mixing strategies, aiming to overcome the aforesaid limitations: design and performance of two compact test vehicles in MMIC technology, both operating in the Q-band frequency range with ultrabroadband IF section, are reported.
{"title":"Downconverting Module Architectures for High Performance Multipixel Cameras","authors":"D. Palombini, M. Jankowski, E. Limiti","doi":"10.1155/2013/586158","DOIUrl":"https://doi.org/10.1155/2013/586158","url":null,"abstract":"Multipixel cameras represent an emerging topology for arrays receivers, improving speed and accuracy of both security scanning systems and radioastronomical sky surveys by means of a matrix of phased elements. Difficulties in the generation and proper distribution to each pixel of the local oscillator signal still limit their use to frequency ranges below a few GHz or at least seriously affect the complexity of the implementable cameras. This work presents a full comparison between two possible system architectures, alternatively based on LO frequency multiplication or subharmonic mixing strategies, aiming to overcome the aforesaid limitations: design and performance of two compact test vehicles in MMIC technology, both operating in the Q-band frequency range with ultrabroadband IF section, are reported.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"269 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115599420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports the latest advances on millimeter-wave CMOS voltage-controlled oscillators (VCOs). Current state-of-the-art implementations are reviewed, and their performances are compared in terms of phase noise and figure of merit. Low power and low phase noise LC-VCO and ring oscillator designs are analyzed and discussed. Design and performance trends over the last decade are provided and discussed. The paper shows how for the higher range of millimeter-waves (>60 GHz) the performances of ring oscillators become comparable with those of LC-VCOs.
{"title":"Performance and Trends in Millimetre-Wave CMOS Oscillators for Emerging Wireless Applications","authors":"M. Voicu, D. Pepe, D. Zito","doi":"10.1155/2013/312618","DOIUrl":"https://doi.org/10.1155/2013/312618","url":null,"abstract":"This paper reports the latest advances on millimeter-wave CMOS voltage-controlled oscillators (VCOs). Current state-of-the-art implementations are reviewed, and their performances are compared in terms of phase noise and figure of merit. Low power and low phase noise LC-VCO and ring oscillator designs are analyzed and discussed. Design and performance trends over the last decade are provided and discussed. The paper shows how for the higher range of millimeter-waves (>60 GHz) the performances of ring oscillators become comparable with those of LC-VCOs.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130503560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a design of a reconfigurable low noise amplifier (LNA) for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) receivers. The proposed design is divided into three stages; the first one is a common gate (CG) topology to provide the input matching over a wideband. The second stage is a programmable circuit to control the mode of operation. The third stage is a current reuse topology to improve the gain, flatness and consume lower power. The proposed LNA is designed using 0.18 μm CMOS technology. This LNA has been designed to operate in two subbands of MB-OFDM UWB, UWB mode-1 and mode-3, as a single or concurrent mode. The simulation results exhibit the power gain up to 17.35, 18, and 11 dB for mode-1, mode-3, and concurrent mode, respectively. The NF is 3.5, 3.9, and 6.5 and the input return loss is better than −12, −13.57, and −11 dB over mode-1, mode-3, and concurrent mode, respectively. This design consumes 4 mW supplied from 1.2 V.
{"title":"A Novel Reconfigurable MB-OFDM UWB LNA Using Programmable Current Reuse","authors":"A. N. Ragheb, G. Fahmy, I. Ashour, A. Ammar","doi":"10.1155/2013/924161","DOIUrl":"https://doi.org/10.1155/2013/924161","url":null,"abstract":"This paper presents a design of a reconfigurable low noise amplifier (LNA) for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) receivers. The proposed design is divided into three stages; the first one is a common gate (CG) topology to provide the input matching over a wideband. The second stage is a programmable circuit to control the mode of operation. The third stage is a current reuse topology to improve the gain, flatness and consume lower power. The proposed LNA is designed using 0.18 μm CMOS technology. This LNA has been designed to operate in two subbands of MB-OFDM UWB, UWB mode-1 and mode-3, as a single or concurrent mode. The simulation results exhibit the power gain up to 17.35, 18, and 11 dB for mode-1, mode-3, and concurrent mode, respectively. The NF is 3.5, 3.9, and 6.5 and the input return loss is better than −12, −13.57, and −11 dB over mode-1, mode-3, and concurrent mode, respectively. This design consumes 4 mW supplied from 1.2 V.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130588126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Anand, N. Koirala, R. Pokharel, H. Kanaya, K. Yoshida
Systematic design of a low power, wideband and multi-bit continuous-time delta-sigma modulator (CTDSM) is presented. The design methodology is illustrated with a 640 MS/s, 20 MHz signal bandwidth 4th order 2-bit CTDMS implemented in 0.18 µm CMOS technology. The implemented design achieves a peak SNDR of 65.7 dB and a high dynamic range of 70 dB while consuming only 19.7 mW from 1.8 V supply. The design achieves a FoM of 0.31 pJ/conv. Direct path compensation is employed for one clock excess loop delay compensation. In the feedforward topology, capacitive summation using the last opamp eliminates extra summation opamp.
{"title":"Systematic Design Methodology of a Wideband Multibit Continuous-Time Delta-Sigma Modulator","authors":"A. Anand, N. Koirala, R. Pokharel, H. Kanaya, K. Yoshida","doi":"10.1155/2013/275289","DOIUrl":"https://doi.org/10.1155/2013/275289","url":null,"abstract":"Systematic design of a low power, wideband and multi-bit continuous-time delta-sigma modulator (CTDSM) is presented. The design methodology is illustrated with a 640 MS/s, 20 MHz signal bandwidth 4th order 2-bit CTDMS implemented in 0.18 µm CMOS technology. The implemented design achieves a peak SNDR of 65.7 dB and a high dynamic range of 70 dB while consuming only 19.7 mW from 1.8 V supply. The design achieves a FoM of 0.31 pJ/conv. Direct path compensation is employed for one clock excess loop delay compensation. In the feedforward topology, capacitive summation using the last opamp eliminates extra summation opamp.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124373095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sang-yeop Lee, Hiroyuki Ito, S. Amakawa, N. Ishihara, K. Masu
An inductorless phase-locked loop with subharmonic pulse injection locking was realized (PLL area: 0.11 mm2) by adopting 90 nm Si CMOS technology. The proposed circuit is configured with two cascaded PLLs; one of them is a reference PLL that generates reference signals to the other one from low-frequency external reference signals. The other is a main PLL that generates high-frequency output signals. A high-frequency half-integral subharmonic locking technique was used to decrease the phase noise characteristics. For a 50 MHz input reference signal, without injection locking, the 1 MHz offset phase noise was −88 dBc/Hz at a PLL output frequency of 7.2 GHz (= 144 × 50 MHz); with injection locking, the noise was −101 dBc/Hz (spur level: −31 dBc; power consumption from a 1.0 V power supply: 25 mW).
{"title":"An Inductorless Cascaded Phase-Locked Loop with Pulse Injection Locking Technique in 90 nm CMOS","authors":"Sang-yeop Lee, Hiroyuki Ito, S. Amakawa, N. Ishihara, K. Masu","doi":"10.1155/2013/584341","DOIUrl":"https://doi.org/10.1155/2013/584341","url":null,"abstract":"An inductorless phase-locked loop with subharmonic pulse injection locking was realized (PLL \u0000area: 0.11 mm2) by adopting 90 nm Si CMOS technology. The proposed circuit is configured with two cascaded PLLs; one of them is a reference PLL that generates reference signals to the other one from low-frequency external reference signals. The other is a main PLL that generates high-frequency output signals. A high-frequency half-integral subharmonic locking technique was used to decrease the phase noise characteristics. For a 50 MHz input reference signal, without injection locking, the 1 MHz offset phase noise was −88 dBc/Hz at a PLL output frequency of 7.2 GHz (= 144 × 50 MHz); with injection locking, the noise was −101 dBc/Hz (spur level: −31 dBc; power consumption from a 1.0 V power supply: 25 mW).","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124558088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Baron, E. Lebrasseur, F. Bassignot, Haixia Wang, S. Ballandras, L. Catherinot, M. Chatras, L. Estagerie, P. Monfraix
Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters.The piezoelectric material LiNbO3 complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal--LiNbO3--metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO3/silicon Au-Au bonding and LiNbO3 lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.
{"title":"Wideband Lithium Niobate FBAR Filters","authors":"T. Baron, E. Lebrasseur, F. Bassignot, Haixia Wang, S. Ballandras, L. Catherinot, M. Chatras, L. Estagerie, P. Monfraix","doi":"10.1155/2013/459767","DOIUrl":"https://doi.org/10.1155/2013/459767","url":null,"abstract":"Filters based on film bulk acoustic resonators (FBARs) are widely used for mobile phone applications, but they can also address wideband aerospace requirements. These devices need high electromechanical coupling coefficients to achieve large band pass filters.The piezoelectric material LiNbO3 complies with such specifications and is compatible with standard fabrication processes. In this work, simple metal--LiNbO3--metal structures have been developed to fabricate single FBAR elements directly connected to each other on a single chip. A fabrication process based on LiNbO3/silicon Au-Au bonding and LiNbO3 lapping/polishing has been developed and is proposed in this paper. Electrical measurements of these FBAR filters are proposed and commented exhibiting filters with 8% of fractional bandwidth and 3.3 dB of insertion losses. Electrical measurements show possibilities to obtain 14% of fractional bandwidth. These devices have been packaged, allowing for power handling, thermal, and ferroelectric tests, corresponding to spatial conditions.","PeriodicalId":232251,"journal":{"name":"International Journal of Microwave Science and Technology","volume":"59 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121133365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：