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Optimization of factors influencing microwave plasma modification of single-crystal SiC (0001) 单晶SiC微波等离子体改性影响因素的优化（0001）

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-07 DOI: 10.1016/j.vacuum.2026.115076

Mengmeng Shen , Yulu Yang , Min Wei , Yiwei Liang , Lingwei Wu , Jiahao Ye , Hongyu Chen , Wei Hang

Single-crystal silicon carbide (4H-SiC) is widely recognized for its exceptional physical and chemical properties, which make it an essential material in high-end electronic devices and optoelectronics; however, the challenges posed by its high hardness and chemical inertness complicate the processing of its surface. This study sought to enhance the material removal rate during 4H-SiC surface processing using microwave plasma modification-assisted shear-thickening polishing by focusing on the surface modification rate. The impacts of the microwave irradiation parameters on the surface modification of 4H-SiC were investigated using simulations, orthogonal experiments, and single-factor experiments. The temperature and velocity distributions of the microwave plasma torch were simulated using the COMSOL Multiphysics software, providing valuable theoretical insights. An orthogonal experiment was subsequently conducted to analyze the effects of the microwave power level, Ar flow rate, O₂ flow rate, and scanning speed on the surface modification process and inform the determination of the optimal processing conditions. Finally, the results of the orthogonal experiments were validated through single-factor experiments determining that a processing power of 160 W, Ar flow rate of 5500 sccm, O₂ flow rate of 8 sccm, scanning speed of 65 mm/min, and scanning grid spacing of 1 mm provided a uniform modified layer with a thickness of 139.59 ± 3.08 nm generated at a remarkable 453.67 ± 10 nm/h. The results of this study offer a theoretical foundation and experimental guidance for improving the microwave plasma modification of 4H-SiC, which is crucial for advancing the application of this material.

单晶碳化硅（4H-SiC）因其卓越的物理和化学性能而被广泛认可，这使其成为高端电子器件和光电子器件中必不可少的材料；然而，其高硬度和化学惰性给其表面加工带来了挑战。本研究旨在通过关注表面改性率来提高微波等离子体修饰辅助剪切增厚抛光在4H-SiC表面加工中的材料去除率。采用模拟实验、正交实验和单因素实验研究了微波辐照参数对4H-SiC表面改性的影响。利用COMSOL Multiphysics软件模拟了微波等离子体炬的温度和速度分布，提供了有价值的理论见解。通过正交实验分析微波功率、Ar流量、O2流量、扫描速度对表面改性过程的影响，确定最佳工艺条件。最后，通过单因素实验对正交实验结果进行验证，在处理功率为160 W、Ar流量为5500 sccm、O2流量为8 sccm、扫描速度为65 mm/min、扫描网格间距为1 mm的条件下，以453.67±10 nm/h的速度生成了厚度为139.59±3.08 nm的均匀改性层。本研究结果为改进4H-SiC的微波等离子体改性提供了理论基础和实验指导，对推进该材料的应用具有重要意义。

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引用次数: 0

Efficient and sustainable Cu/LC catalyst from amino acid for aqueous-phase reforming of methanol 高效、可持续的氨基酸Cu/LC催化剂用于甲醇水相重整

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-07 DOI: 10.1016/j.vacuum.2026.115077

Xujia Pan , Dan Liu , Haojie Qian, Zebo Wu, Shizhi Tan, Huibin Yin, Kezi Yao, Yantong Li, Yongjun Xu

Aqueous-phase reforming of methanol (APRM) has shown great potential for hydrogen (H₂) production and storage in distributed/mobile vehicles or fuel cell stations. However, the design and synthesis of a valid and hydrothermally stable non-precious metal catalyst remains a significant challenge. Herein, a carbon-based Cu/LC catalyst was synthesized by using inexpensive amino acids as precursors and controlling the pyrolysis process, which exhibited excellent catalytic performance in the low-temperature methanol water reforming hydrogen production reaction. The optimum catalyst of 0.67Cu/LC-400 exhibited a high hydrogen production rate of 51.20 μmol·g_cat⁻¹·s⁻¹ at 210 °C, which was significantly higher than most Pt-based and Cu-based catalysts. The characterization results and kinetic analysis indicated that the ratio of Cu⁰/Cu ⁺ plays a crucial role in the catalytic activity of APRM. There is a synergistic effect between Cu⁰ and Cu⁺, which promotes the production of H₂. This research provides a facile method to synthesize hydrothermally stable non-noble metal catalysts for efficient APRM.

甲醇水相重整（APRM）在分布式/移动车辆或燃料电池站的氢气生产和储存方面显示出巨大的潜力。然而，设计和合成一种有效且水热稳定的非贵金属催化剂仍然是一个重大挑战。本文以廉价氨基酸为前驱体，控制热解过程，合成了碳基Cu/LC催化剂，该催化剂在低温甲醇水重整制氢反应中表现出优异的催化性能。在210℃下，0.67Cu/LC-400催化剂的产氢率为51.20 μmol·gcat−1·s−1，显著高于大多数pt基和cu基催化剂。表征结果和动力学分析表明，Cu0/Cu +的比例对APRM的催化活性起着至关重要的作用。Cu0和Cu+之间存在协同作用，促进H2的生成。本研究为高效APRM制备水热稳定的非贵金属催化剂提供了一种简便的方法。

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引用次数: 0

Numerical simulation on element volatilization behavior during electron beam refining of FGH4097 superalloy FGH4097高温合金电子束精炼过程中元素挥发行为的数值模拟

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-06 DOI: 10.1016/j.vacuum.2026.115074

Ziwen Zhu , Zhikang Wang , Xiaolong Luo , Qifei Zhang , Xiaogang You , Zhongwei Zhao

This study investigates electron beam refining (EBR) of the FGH4097 Ni-Co-based superalloy powders, with a focus on the element volatilization behavior and accurate control of alloy composition. A three-dimensional transient thermal model, coupled with element vaporization kinetics, is employed to predict the evolution of temperature field and associated compositional changes during EBR. The model incorporates the rotating Gaussian heat source, dynamic beam power control, multiphysics coupling, along with vaporization kinetics dependent on elemental interactions. Validation against experimental data confirms the model's accuracy and demonstrates its effectiveness in guiding EBR parameter optimization for precise control of elemental losses while maintaining alloy specifications.

本文研究了FGH4097镍钴基高温合金粉末的电子束精炼（EBR），重点研究了元素挥发行为和合金成分的精确控制。采用三维瞬态热模型，结合元素汽化动力学，预测了EBR过程中温度场的演变及相关成分的变化。该模型结合了旋转高斯热源、动态光束功率控制、多物理场耦合以及依赖于元素相互作用的蒸发动力学。对实验数据的验证证实了该模型的准确性，并证明了其在指导EBR参数优化以精确控制元素损失同时保持合金规格的有效性。

引用次数: 0

Enhancing interfacial bonding of graphite film/Cu composites via functional group modification 通过官能团改性增强石墨膜/Cu复合材料的界面键合

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-05 DOI: 10.1016/j.vacuum.2026.115069

Junchen Huang , Fenfang Lu , Zijian Zhang , Qian Liu , xinbo He , Xuanhui Qu

Graphite film/Cu composites were prepared by first applying a functional group layer to the graphite film surface, followed by Cu deposition. By converting mechanical bonding into chemical bonding, functional groups greatly strengthened the interfacial bonding. The interfacial shear strength force of the functionalized composites increased from 69 ± 3 kPa to 94 ± 4 kPa compared with the non-functionalized composites. Moreover, the functionalized composites exhibited remarkable flexibility as a result of the enhanced interfacial bonding. Reinforced interfacial bonding reduced phonon scattering, thereby increasing the thermal conductivity of the functionalized composites from 1023 ± 25 W m⁻¹ K⁻¹ to 1093 ± 34 W m⁻¹ K⁻¹. High thermal conductivity, superior mechanical properties, and inherent flexibility make the interface-engineered graphite film/Cu composites highly promising for use in flexible thermal management systems.

首先在石墨膜表面镀上官能团层，然后沉积Cu，制备了石墨膜/Cu复合材料。官能团通过将机械键转化为化学键，大大加强了界面键合。与未功能化复合材料相比，功能化复合材料的界面剪切强度从69±3 kPa增加到94±4 kPa。此外，由于界面结合增强，功能化复合材料表现出显著的柔韧性。增强的界面结合减少了声子散射，从而使功能化复合材料的导热系数从1023±25 W m−1 K−1提高到1093±34 W m−1 K−1。高导热性、优异的机械性能和固有的灵活性使得界面工程石墨膜/Cu复合材料在柔性热管理系统中具有很高的应用前景。

引用次数: 0

Atomic-scale characterization of flux pinning defects in YBCO films YBCO薄膜熔剂钉钉缺陷的原子尺度表征

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-05 DOI: 10.1016/j.vacuum.2026.115070

Song Hu , Tingting Yao , Xinwei Wang , Yidan Fan , Xianfeng Wu , Beibei Qiao , Xuexi Yan , Yixiao Jiang , Kepeng Song , Chunlin Chen

YBa₂Cu₃O_7-δ (YBCO) thin films have attracted considerable attention due to their remarkable superconducting properties, which include a high superconducting critical temperature (Tc) and elevated critical current density. The introduction of defects in YBCO has been shown to effectively pin flux vortices, thereby enhancing the critical current density under magnetic field conditions. In this study, the microstructure of YBCO thin films was examined through transmission electron microscopy (TEM). Atomic-resolution TEM imaging and energy-dispersive spectroscopy (EDS) elemental mapping were employed to elucidate the atomic structure, elemental distribution, and strain fields associated with defects in YBCO, including dislocations, stacking faults, and anti-phase boundaries. These defects may disrupt the formation of Cooper pairs and lead to a reduction in local T_c by altering the local coordination environment of the CuO₂ planes. This research provides new insights into defect engineering within YBCO thin films and establishes a foundation for enhancing the performance of superconducting materials.

YBa2Cu3O7-δ (YBCO)薄膜由于具有较高的超导临界温度（Tc）和较高的临界电流密度而引起了人们的广泛关注。在YBCO中引入缺陷可以有效地引脚磁通涡流，从而提高磁场条件下的临界电流密度。本研究采用透射电子显微镜（TEM）对YBCO薄膜的微观结构进行了研究。利用原子分辨率TEM成像和能谱（EDS）元素映射分析了YBCO的原子结构、元素分布和与缺陷相关的应变场，包括位错、层错和反相边界。这些缺陷可能通过改变CuO2平面的局部配位环境，破坏Cooper对的形成，导致局部Tc的降低。该研究为YBCO薄膜的缺陷工程提供了新的见解，并为提高超导材料的性能奠定了基础。

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引用次数: 0

Improved electrical characteristics of p-substrate Ge MOS and Ge nMOSFET with appropriate rapid oxidation on hafnium nitride interfacial layer 在氮化铪界面层上适当快速氧化，改善了p衬底Ge MOS和Ge nMOSFET的电学特性

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-05 DOI: 10.1016/j.vacuum.2026.115065

Dun-Bao Ruan , Kuei-Shu Chang-Liao , Guan-Ting Liu , Yi-Hsuan Cheng , Chih-Cheng Chin , Jia-Cheng Liu , Ze-Fu Zhao , Kai-Jhih Gan

In order to balance the trade-off between oxygen passivation effect and side effects caused by excessive oxidation during Ge device fabrication, an appropriate rapid oxidation process is directly applied on the alloy-like hafnium nitride interfacial layer (IL). After detailed material analysis and comparison of electrical performance, the IL with 13.6 % Ge⁴⁺ content exhibits an ultralow equivalent oxide thickness value and relatively low gate leakage current, the lowest interface trap density, the least frequency dispersion, the highest drive current, the lowest subthreshold swing value, and the highest on/off current ratio among all samples. The improvement can be attributed to the removal of most border traps and oxygen vacancies without introducing possible side effects. The results are promising for improving the electrical performance of Ge MOS device.

为了平衡锗器件制造过程中氧钝化效果与过度氧化产生的副作用之间的权衡，在类合金氮化铪界面层（IL）上直接应用了适当的快速氧化工艺。经过详细的材料分析和电学性能比较，在所有样品中，13.6% Ge4+含量的IL具有超低的等效氧化物厚度值和相对较低的栅漏电流、最低的界面陷阱密度、最低的频散、最高的驱动电流、最低的亚阈值摆幅值和最高的开/关电流比。这种改进可归因于消除了大多数边界陷阱和氧空位，而不会产生可能的副作用。研究结果对改善Ge MOS器件的电学性能具有重要意义。

引用次数: 0

A dual-phase refractory high-entropy alloy with extremely high specific strength and excellent ultra-high temperature strength 一种双相耐火高熵合金，具有极高的比强度和优异的超高温强度

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-05 DOI: 10.1016/j.vacuum.2026.115072

Wuxin Fan , Guoqiang Zhu , Botao Jiang , Baoxian Su , Xiaodong Liu , Chen Liu , Xu Liu , Hao Guo , Liang Wang , Eshov Bakhtiyor , Liangshun Luo , Yanqing Su , Jingjie Guo

Refractory high-entropy alloys struggle to balance strength and density at ultra-high temperatures. This work presents a novel dual-phase WNbMoTaVSi_0.3 refractory high-entropy alloy, fabricated via arc melting, composed of BCC and M₅Si₃ phases. The BCC phase has three different compositions. The phase formation sequence was elucidated by CALPHAD-based thermodynamic simulation. The refractory high-entropy alloy achieves unprecedented properties: yield strengths of 1810.7 ± 57.4 MPa at 1473 K, 1413.4 ± 62.4 MPa at 1573 K, and 1291.1 ± 72.4 MPa at 1673 K, with peak strengths reaching 1932.3 ± 65.8 MPa, 1479.2 ± 68.6 MPa, and 1323.3 ± 79.6 MPa, respectively. Remarkably, the yield strength at 1473 K surpasses that of the matrix WNbMoTaV alloy (735 MPa) by 146.3 %, while the specific strength reaches 156.4 ± 5.1 MPa cm³/g. The outstanding strength is mainly due to the strengthening effect of solid solution and the strengthening effect provided by M₅Si₃ phase.

难熔高熵合金在超高温下难以平衡强度和密度。本文提出了一种由BCC和M5Si3相组成的新型电弧熔炼双相难熔高熵合金WNbMoTaVSi0.3。BCC相有三种不同的组成。基于calphad的热力学模拟阐明了相的形成顺序。耐火高熵合金在1473 K、1573 K和1673 K下的屈服强度分别达到1810.7±57.4 MPa、1413.4±62.4 MPa和1291.1±72.4 MPa，峰值强度分别达到1932.3±65.8 MPa、1479.2±68.6 MPa和1323.3±79.6 MPa。1473 K时的屈服强度比基体WNbMoTaV合金（735 MPa）高出146.3%，比强度达到156.4±5.1 MPa cm3/g。优异的强度主要是由于固溶体的强化作用和M5Si3相的强化作用。

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引用次数: 0

Corrigendum to “Cluster-formula interpretation of multivalent state formation in TaNbHfZr-Cu and oxide films” [Vacuum 246 (2026) 115049] “TaNbHfZr-Cu和氧化物薄膜中多价态形成的簇式解释”[真空246(2026)115049]的勘误表

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-05 DOI: 10.1016/j.vacuum.2026.115068

Qiao Jiang , Yinglin Hu , Xiao Wang , Xiaona Li , Qi Zhu , Yujing Qin , Zhumin Li , Yuehong Zheng , Renwei Liu , Yuanyuan Cui , Chuang Dong , Cuimin Bao , Peter K. Liaw

引用次数: 0

Particle deposition driven by plasma discharge in magnetron sputtering of TiOx compound targets 磁控溅射TiOx复合靶中等离子体放电驱动的颗粒沉积

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-03 DOI: 10.1016/j.vacuum.2026.115067

Qiaoru An, Feng Shi, Haisheng Fang

Radio frequency (RF) magnetron sputtering applies a high-frequency alternating voltage to the target, making it suitable for sputtering dielectric materials. In this study, a comprehensive numerical model combining the finite element method for electromagnetic fields, a fluid model for plasma discharge, and the Monte Carlo method for particle transport was developed. Periodic averages were used to represent long-term and continuous deposition for TiO_x targets. Key outputs included electron density, sputtering flux, and deposition flux, enabling predictions of deposition rate, particle utilization, and the compositional ratio of the film. The parametric analyses show that a higher central electromagnetic coil current in the magnetron assembly, increased input power, and a lower O/Ti atomic ratio of target contribute to an increased deposition rate. Specifically, the deposition rate peaks at 1.5 Pa due to enhanced discharge, while higher pressures reduce it through increased collision frequency during particle transport. Furthermore, elevated gas pressure and a higher target O/Ti ratio reduce particle utilization and influence the O/Ti ratio in the deposited film. These findings contribute to improved control of deposition processes, enabling enhanced efficiency in RF magnetron sputtering applications.

射频（RF）磁控溅射对目标施加高频交变电压，使其适用于溅射介电材料。本研究建立了电磁场有限元法、等离子体放电流体模型和粒子输运蒙特卡罗方法相结合的综合数值模型。周期平均值代表长期和连续沉积的TiOx目标。关键输出包括电子密度、溅射通量和沉积通量，从而能够预测沉积速率、粒子利用率和薄膜的成分比。参数分析表明，增大磁控管组件的中心电磁线圈电流、增大输入功率和降低靶材的O/Ti原子比有助于提高沉积速率。具体来说，由于放电增强，沉积速率在1.5 Pa时达到峰值，而更高的压力通过增加粒子传输过程中的碰撞频率来降低沉积速率。此外，升高的气体压力和较高的目标O/Ti比降低了颗粒利用率，并影响沉积膜中的O/Ti比。这些发现有助于改善沉积过程的控制，从而提高射频磁控溅射应用的效率。

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引用次数: 0

Function-layer-driven surface engineering for high-efficiency and stable secondary electron emission films 高效稳定二次电子发射膜的功能层驱动表面工程

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-01-03 DOI: 10.1016/j.vacuum.2025.115063

Yue Su, Jie Li, Shengli Wu, Wenbo Hu

The modification of MgO thin films through surface engineering has been widely investigated to enhance secondary electron emission (SEE) and air stability. Here, we propose two progressive hierarchical strategies based on Al and Au co-doped MgO thin film, designed as bilayer and trilayer sandwich structures with MgO-based functional layers. The optimized surface bilayer structure achieves a SEE coefficient (SEY) at Ep = 200 eV (δ₂₀₀) above 4.5 with a low decay rate of ∼5 %. Integrating both strategies, the final surface sandwich structure shows excellent air stability, maintaining δ₂₀₀ = 4.5 and a decay rate of only 4.25 % after 72 h air exposure. Compared with the previously reported co-doped film with a 2 nm Al₂O₃ passivation layer (C_P2nm), our surface sandwich structure exhibits clear advantages in terms of SEE performance and stability. Specifically, the inital δ₂₀₀ increases by 12 % at a comparable decay rate, wheras after 72 h of exposure to air, These results demonstrate that the hierarchical sandwich design effectively enhances both SEE performance and air stability, offering a superior strategy for MgO-based electron emission films.

通过表面工程对氧化石墨烯薄膜进行改性以提高二次电子发射（SEE）和空气稳定性已被广泛研究。在这里，我们提出了基于Al和Au共掺杂MgO薄膜的两种渐进分层策略，设计成具有MgO功能层的双层和三层夹层结构。优化后的表面双层结构在Ep = 200 eV （δ200）时，SEE系数（SEY）大于4.5，衰减率低至~ 5%。综合这两种策略，最终的表面夹层结构具有优异的空气稳定性，在空气暴露72 h后保持δ200 = 4.5，衰减率仅为4.25%。与先前报道的具有2nm Al2O3钝化层（CP2nm）的共掺杂膜相比，我们的表面夹层结构在SEE性能和稳定性方面具有明显的优势。具体来说，初始δ200以相同的衰减率增加了12%，而在空气中暴露72 h后，这些结果表明，分层夹层设计有效地提高了SEE性能和空气稳定性，为mgo基电子发射膜提供了一种优越的策略。

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