IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-27 DOI: 10.1016/j.vacuum.2026.115142

Angel Regalado-Contreras , Jonathan Rosas-Alcántara , Karla Paola Valdez-Núñez , Mayra Cecilia Ramírez-Camacho , Wencel de la Cruz

p-type TiO_x thin films have been fabricated using vacuum-based techniques at different deposition pressures, but no reproducible processing window has been established. Herein, TiO_x thin films were deposited by laser ablation of a Ti target under O₂ atmospheres at pressures ranging from 1.2 × 10⁻⁵ to 0.1 Torr. In vacuo X-ray Photoelectron Spectroscopy (XPS) revealed Ti⁴⁺/Ti³⁺ mixed valence below 10⁻² Torr and exclusively Ti⁴⁺ above this threshold. Quantification based on Gaussian peak deconvolution revealed Ti⁴⁺ ranging from 20 to 30.6 at.%, Ti³⁺ from 10.1 to 1.5 at.%, and oxygen approximately constant at ∼69 at.%, with an uncertainty of ±5 %. The electrical properties were carrier concentrations from 2 × 10²⁰ cm⁻³ (electrons) to 2 × 10¹⁶ cm⁻³ (holes), resistivity from 0.4 to 460 Ω cm, and mobility from 0.5 to 6 cm² V⁻¹ s⁻¹. The films with mixed Ti valence were n-type and those with Ti⁴⁺ alone were p-type. Cathodoluminescence, in combination with XPS, revealed shallow acceptor levels mediating p-type conductivity, located at 0.32–0.36 eV above the VBM. Optically, average transmittance as high as 66 % on the visible spectrum (350–750 nm) was achieved. Surface morphology analyzed through atomic force microscopy revealed RMS roughness as low as 0.77 nm. Thin-Film-Transistors (TFT) were fabricated by photolithography. The output/transfer characteristics evolve from non-saturated/weak gate modulation to fully saturated/gate-controlled, consistent with TiO_x channels exhibiting carrier concentrations on the order of 10¹⁹ to 10¹⁷ cm⁻³, respectively. This study advances the body of knowledge on semiconducting TiO_x thin films and their reproducible integration into TFT with tunable performance.

在不同的沉积压力下，利用真空技术制备了p型TiOx薄膜，但没有建立可重复的加工窗口。在1.2 × 10−5 ~ 0.1 Torr的O2气氛下，通过激光烧蚀Ti靶材，制备了TiOx薄膜。在真空x射线光电子能谱（XPS）中，Ti4+/Ti3+的混合价低于10−2 Torr， Ti4+仅高于该阈值。基于高斯峰反褶积的定量分析显示Ti4+在20 ~ 30.6 at之间。%， Ti3+从10.1到1.5 at。%，氧在~ 69 at近似恒定。%，不确定度为±5%。电学性质为载流子浓度从2 × 1020 cm−3（电子）到2 × 1016 cm−3（空穴），电阻率从0.4到460 Ω cm，迁移率从0.5到6 cm2 V−1 s−1。混合钛价的薄膜为n型，单独含Ti4+的薄膜为p型。阴极发光结合XPS显示，介导p型电导率的受体水平较浅，位于VBM上方0.32-0.36 eV。光学上，在可见光谱（350 - 750nm）上的平均透过率高达66%。通过原子力显微镜分析表面形貌，RMS粗糙度低至0.77 nm。采用光刻技术制备薄膜晶体管（TFT）。输出/转移特性从非饱和/弱门调制演变为完全饱和/门控制，与TiOx通道的载流子浓度分别为1019至1017 cm−3相一致。这项研究推进了半导体TiOx薄膜的知识体系及其可重复集成到具有可调性能的TFT中。

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引用次数: 0

Erosion of cathode materials with different melting points in a pulsed vacuum arc 脉冲真空电弧中不同熔点阴极材料的腐蚀

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-22 DOI: 10.1016/j.vacuum.2026.115132

G. Yu Yushkov, V.D. Gridilev, A.G. Nikolaev, E.M. Oks

We present the results of our experiments of specific erosion of 13 different cathode materials in a microsecond pulsed vacuum arc with current 200 A. The specific erosion of materials with relatively high melting points, greater than Т_melt = 650 °C for magnesium, was found to lie within the range from 30 to 100 μg/C, which is typical of erosion in vacuum arc cathode spots. For materials with low melting points, below Т_melt = 328 °C for lead, anomalously high specific erosion in the range from 500 to 1000 μg/C was observed. We find that this high erosion is due to the contribution of a microdroplet component to the erosion products from vacuum arc cathode spots, when the cathode surface melts to the depth of tens of micrometers during the arc pulse and splashing of the melt due to electro explosive processes in the cathode spots.

本文介绍了13种不同阴极材料在200 a微秒脉冲真空电弧中比蚀的实验结果。熔点较高的材料（镁的熔点大于Тmelt = 650℃）的比蚀在30 ~ 100 μg/C范围内，是典型的真空电弧阴极点蚀。对于熔点较低的材料，铅在Тmelt = 328℃以下，在500 ~ 1000 μg/C范围内观察到异常高的比侵蚀。我们发现，这种高侵蚀是由于微液滴成分对真空电弧阴极点侵蚀产物的贡献，当阴极表面在电弧脉冲期间熔化到几十微米的深度时，阴极点上的电爆炸过程导致熔体飞溅。

引用次数: 0

Composition-dependent structural and optical properties of combinatorially deposited, RF sputtered gallium oxynitride layers 组合沉积射频溅射氧化氮化镓层的结构与光学特性

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-23 DOI: 10.1016/j.vacuum.2026.115133

Marcell Gajdics , Ildikó Cora , Tamás Kolonits , György Sáfrán , Edit Szilágyi , Zsolt Zolnai , Béla Pécz

Gallium oxynitride thin films were deposited by reactive RF sputtering from a liquid Ga target in a working gas mixture of argon, oxygen and nitrogen, with changing oxygen proportion. A combinatorial deposition method was applied that resulted in Ga-O-N samples of varying composition and enabled the characterization of material properties with high throughput over a wide composition range. The optical properties of the films were determined by spectroscopic ellipsometry, while X-ray diffraction and transmission electron microscopy were applied for structural characterization. The composition (measured by energy dispersive spectroscopy and elastic recoil detection analysis), structure and morphology of the films depended on the deposition conditions, especially the actual oxygen flow rate. The dependence of the refractive index and the optical gap on the elemental composition was determined and their values were plotted in ternary Ga-O-N composition diagrams. The same optical properties can occur for different compositions. It was shown that by varying the composition, the optical properties of gallium oxynitride films can be tuned.

在氩气、氧气和氮气混合的工作气体中，改变氧的比例，用反应射频溅射法制备了液态镓靶层的氧化氮化镓薄膜。采用组合沉积方法，得到了不同成分的Ga-O-N样品，并在广泛的成分范围内实现了材料性能的高通量表征。利用椭偏光谱对膜的光学性质进行了表征，并用x射线衍射和透射电镜对膜的结构进行了表征。薄膜的组成（通过能量色散光谱和弹性反冲检测分析测量）、结构和形貌取决于沉积条件，特别是实际氧流量。测定了折射率和光隙与元素组成的关系，并在三元Ga-O-N组成图中绘制了它们的值。相同的光学性质可以出现在不同的组合物中。结果表明，通过改变氧化氮化镓薄膜的组成，可以调节薄膜的光学性质。

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引用次数: 0

Study on debris contamination characteristics and control methods of DPP-type EUV light source dpp型EUV光源碎片污染特性及控制方法研究

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-02-03 DOI: 10.1016/j.vacuum.2026.115156

Guo Yang, Xinjian Zhu, Jiale Zheng, Chenhao Zhou, Guanjun Huang, Xiao Ling, Lin Jiang, Jianhua Zhang

As a key technology for advanced semiconductor manufacturing, extreme ultraviolet lithography (EUVL) requires high exposure power to achieve high productivity and low cost. Nevertheless, debris-induced contamination and degradation of EUV optics remain a major limitation for lithography efficiency and system stability, especially in discharge-produced plasma (DPP) EUV sources. In this work, we realized the effectiveness of in-situ monitoring and control of debris contamination associated with DPP sources. First, we analyze the material characteristics and deposition behavior of debris through in-situ collection and characterization experiments. By varying exposure conditions, we identify key parameters that influence debris deposition. Furthermore, we evaluate the effectiveness and limitations of cleaning debris with operando-compatible argon (Ar) plasma. Finally, we design a debris mitigation (DM) unit that integrates vacuum differential and debris inhibition functions for the DPP system. This work offers practical strategies to mitigate debris in DPP EUV sources, which is crucial for enhancing their power scalability and operational stability in advanced lithography systems.

极紫外光刻（EUVL）作为先进半导体制造的关键技术，要求高曝光功率才能实现高生产率和低成本。然而，碎片引起的污染和EUV光学器件的退化仍然是光刻效率和系统稳定性的主要限制，特别是在放电产生等离子体（DPP） EUV光源中。在这项工作中，我们实现了现场监测和控制与DPP源相关的碎片污染的有效性。首先，通过现场收集和表征实验，分析了碎屑的材料特性和沉积行为。通过改变暴露条件，我们确定了影响碎屑沉积的关键参数。此外，我们评估了使用操作氧化物相容氩（Ar）等离子体清洁碎屑的有效性和局限性。最后，我们为DPP系统设计了一个碎片减缓（DM）单元，该单元集成了真空差速器和碎片抑制功能。这项工作为减少DPP EUV源中的碎片提供了实用的策略，这对于提高其功率可扩展性和先进光刻系统的运行稳定性至关重要。

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引用次数: 0

Material-based uniqueness in InSb thin films: Flash Evaporation Epitaxy as a tool for secure device engineering InSb薄膜中基于材料的独特性：作为安全器件工程工具的闪蒸外延

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-02-07 DOI: 10.1016/j.vacuum.2026.115166

Piotr Kałuziak, Jan Raczyński, Semir El-Ahmar, Marta Przychodnia, Marek Nowicki, Ryszard Czajka, Wojciech Koczorowski

In this work, we investigate Flash Evaporation Epitaxy (FEE) as a method for fabricating InSb/GaAs heterostructures exhibiting intrinsic electrical variability while preserving structural and chemical homogeneity. n-InSb/i-GaAs systems were grown using a modified FEE-based high-vacuum setup. The elemental mapping in both the plan view and the cross-section shows a close stoichiometric distribution of the antimony and indium atoms, and a homogeneous incorporation of oxygen with a low content at a level of 1 at.%. SEM and AFM analyses confirm a uniform surface morphology. Electrical characterization of full wafers and progressively structured areas reveals variations in sheet resistance with the range of X-Y exceeding experimental uncertainty. These variations form a statistical distribution of electrical parameters resulting from the properties of the FEE method rather than from significant structural or stoichiometry non-uniformity. This distribution defines the material-based uniqueness of the films. While usually considered a limitation, it is demonstrated here as a functional advantage for generating unique physical signatures applicable to hardware-level authenticity-verification systems.

在这项工作中，我们研究了闪蒸外延（FEE）作为一种制造InSb/GaAs异质结构的方法，该异质结构在保持结构和化学均匀性的同时具有内在的电变异性。n-InSb/i-GaAs系统使用改进的基于fee的高真空装置生长。平面图和横截面上的元素映射都显示了锑和铟原子的紧密化学计量分布，以及氧的均匀结合，含量低，为1 at.%。SEM和AFM分析证实了均匀的表面形貌。整个晶圆片和逐步结构区域的电特性揭示了片电阻的变化，其X-Y范围超过了实验不确定性。这些变化形成了电参数的统计分布，这是由FEE方法的性质造成的，而不是由显著的结构或化学计量不均匀性造成的。这种分布定义了电影基于物质的独特性。虽然通常被认为是一种限制，但这里展示了它在生成适用于硬件级身份验证系统的唯一物理签名方面的功能优势。

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引用次数: 0

Tailoring band gap, structural, and optical properties of CVD-grown few-layer MoS2 via swift heavy-ion irradiation 快速重离子辐照cvd生长的少层二硫化钼的带隙裁剪、结构和光学性质

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-31 DOI: 10.1016/j.vacuum.2026.115151

Mayur Khan , Lara Gigli , Jasper Rikkert Plaisier , Romana Mikšová , Anna Macková , Devesh Kumar Avasthi , Ambuj Tripathi

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are of great interest for next-generation electronic and optoelectronic devices due to their unique band structures. Here, we report the synthesis of high-quality few-layer MoS₂ films using the sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) method. This approach enables growth at a reduced temperature of 650֯C, significantly lower than the conventional 850֯C. Structural and morphological characterizations performed using optical microscopy, SEM, TEM, synchrotron-based XRD, Raman spectroscopy, UV–Vis spectroscopy, and Rutherford backscattering spectrometry (RBS) confirm crystalline, uniform, and nearly defect-free films. The Raman A_1g-E_2g¹ mode separation of ≈24.5 cm⁻¹ and RBS measurements indicate ≤6 layers of MoS₂. XRD and SAED analyses further confirm the predominantly single-crystalline nature with an interplanar spacing of 0.27 nm. To examine ion-beam induced structural and electronic properties modification in post-synthesis MoS₂, the films were irradiated with 100 MeV Ni ions at fluences between 1 × 10¹¹ and 1 × 10¹³ ions/cm². UV–Vis spectra reveal systematic blue shifts in excitonic absorption peaks, corresponding to a ∼24 meV band gap increase. RBS analysis attributes these changes to sulfur deficiency induced by preferential sputtering, which generate compressive strain. This study demonstrates ion irradiation as an effective route for tailoring the optoelectronic properties of 2D MoS₂.

二维（2D）过渡金属二硫族化合物（TMDs）由于其独特的能带结构而在下一代电子和光电子器件中引起了极大的兴趣。本文报道了采用氯化钠（NaCl）辅助化学气相沉积（CVD）方法合成高质量的少层MoS2薄膜。这种方法可以在650֯℃的低温下生长，明显低于传统的850֯℃。使用光学显微镜、扫描电镜、透射电镜、基于同步加速器的XRD、拉曼光谱、UV-Vis光谱和卢瑟福后向散射光谱（RBS）进行的结构和形态表征证实了薄膜的结晶性、均匀性和几乎无缺陷。Raman A1g-E2g1模式分离≈24.5 cm−1和RBS测量表明MoS2≤6层。XRD和SAED分析进一步证实了该材料以单晶为主，其面间距为0.27 nm。为了研究离子束对合成后二硫化钼的结构和电子性能的影响，我们用100 MeV的Ni离子在1 × 1011和1 × 1013离子/cm2之间辐照薄膜。紫外可见光谱显示激子吸收峰有系统的蓝移，对应于~ 24 meV带隙的增加。RBS分析将这些变化归因于择优溅射导致的缺硫，从而产生压应变。本研究证明离子辐照是一种有效的途径来定制二维二硫化钼的光电特性。

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引用次数: 0

Effect of LPSO phase morphology on the microstructure evolution and mechanical performance of Mg–Gd–Y–Zn–Zr alloys processed by multidirectional forging LPSO相形态对Mg-Gd-Y-Zn-Zr合金多向锻造组织演变及力学性能的影响

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-29 DOI: 10.1016/j.vacuum.2026.115146

Zhexuan Huang , Chao Tan , Shechun Wei , Han Wang , Jinjun Wang , Jingyuan Li

This study investigates an Mg-Gd-Y-Zn-Zr alloy containing long-period stacking ordered (LPSO) phases to clarify how lamellar morphology and multidirectional forging (MDF, 480 °C, 18 passes) influence its microstructure and mechanical response. After homogenization, the furnace-cooled sample (F) retained dense lamellar LPSO structures, while the water-quenched sample (Q) exhibited sparse lamellae and partially block-shaped phases. EBSD results revealed that Q possessed a higher recrystallized fraction (22.9 %) and finer grains (33.3 μm), whereas F showed inhibited recrystallization (13.2 %, 51.4 μm). TEM bright-field images demonstrated dislocation accumulation and strain localization adjacent to dense lamellae, in contrast to the relatively uniform matrix around sparse lamellae. Mechanical testing indicated that both alloys exhibited substantial strengthening after MDF; the F alloy achieved higher strength (TYS = 233 MPa, UTS = 294 MPa), while the Q alloy displayed improved ductility (EL = 4.5 %). These results suggest that densely arranged LPSO lamellae enhance load-bearing capacity but constrain dislocation motion and grain-boundary migration, whereas sparse lamellae facilitate more homogeneous deformation.

本研究研究了一种含有长周期有序堆积相（LPSO）的Mg-Gd-Y-Zn-Zr合金，以阐明层状形貌和多向锻造（MDF, 480°C， 18道次）对其微观组织和力学响应的影响。均匀化后，炉冷样品(F)保留了致密的片状LPSO结构，而水淬样品(Q)则呈现出稀疏的片状和部分块状相。EBSD结果表明，Q具有较高的再结晶率（22.9%）和更细的晶粒（33.3 μm），而F具有抑制再结晶（13.2%,51.4 μm）。TEM亮场图像显示密集片附近的位错积累和应变局部化，与稀疏片周围相对均匀的基体形成对比。力学试验表明，两种合金经MDF处理后均表现出明显的强化；F合金具有较高的强度（TYS = 233 MPa, UTS = 294 MPa），而Q合金具有较好的延展性（EL = 4.5%）。这些结果表明，密集排列的LPSO片层增强了承载能力，但限制了位错运动和晶界迁移，而稀疏的片层有利于更均匀的变形。

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引用次数: 0

Morphological changes in Ge surfaces induced by step ion beam irradiation 阶梯离子束辐照对锗表面形貌的影响

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-30 DOI: 10.1016/j.vacuum.2026.115145

Rei Miyata , Naoto Oishi , Noriko Nitta

Porous structures develop on Ge surfaces under ion beam irradiation, owing to the self-organization of point defects. Porous structures have been explored for applications in electronic devices as electrode materials in lithium-ion batteries and as functional components in gas sensors. For these applications, precise control of the porous morphology is crucial to maximize the desired functionality and device performance. The size and morphology of such structures are influenced by various factors, including irradiation fluence, ion energy, and irradiation angle. We investigated the formation of porous structures on Ge surfaces under step irradiation conditions by systematically varying the irradiation parameters. Two-step irradiation is a process in which the irradiation conditions are modified between step 1 and step 2. At 0° angle of incidence, the number of step irradiations only had a minimal effect on the structure formation. However, at varying irradiation angles, the resulting structures were influenced by the step irradiation angle. Under angle-step irradiation with an increased fluence, structures with a combination of the effects of both irradiations were formed. These results demonstrate that step irradiation offers a practical route to finely tailor porous Ge morphologies, thereby enabling performance optimization for applications.

由于点缺陷的自组织，在离子束照射下，锗表面形成多孔结构。多孔结构作为锂离子电池的电极材料和气体传感器的功能部件在电子器件中的应用已经得到了探索。对于这些应用，精确控制多孔形态对于最大限度地提高所需的功能和设备性能至关重要。这种结构的大小和形态受多种因素的影响，包括辐照强度、离子能量和辐照角度。通过系统地改变辐照参数，研究了阶梯辐照条件下锗表面多孔结构的形成。两步辐照是在步骤1和步骤2之间改变辐照条件的过程。在0°入射角下，台阶辐照次数对结构形成的影响很小。然而，在不同的辐照角下，所得到的结构受到台阶辐照角的影响。在增加辐照量的角阶辐照下，形成了两种辐照效应联合作用的结构。这些结果表明，阶梯辐照为精细定制多孔锗形态提供了一种实用的途径，从而实现了应用的性能优化。

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引用次数: 0

Superior compressive performance of TPMS-enhanced Voronoi Ti6Al4V alloy fabricated by selective laser melting 选择性激光熔化制备tpms增强的Voronoi Ti6Al4V合金的优越压缩性能

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-13 DOI: 10.1016/j.vacuum.2026.115092

Ning Wang , Huiru Wang , Yuxin Liu , Weijun Liu , Zhenyu Liu , Hongyou Bian , Kai Zhang

An innovative triply periodic minimal surface (TPMS)-enhanced Voronoi structure was successfully designed and fabricated from Ti6Al4V alloy using selective laser melting (SLM) technology. The introduction of the TPMS topology significantly enhanced compressive performance of Voronoi structure. Specifically, the elastic modulus, yield strength, and ultimate strength were enhanced by over 35 % compared to the pure Voronoi structure. The G-Voronoi structure exhibited superior compressive performance and exceptional structural stability compared to the D-Voronoi and IWP-Voronoi structures, with the underlying enhancement mechanisms further elucidated through finite element analysis. Furthermore, analysis based on the Gibson–Ashby model revealed that this significant enhancement in compressive performance primarily stemmed from a fundamental transition in the structural deformation mechanism, shifting from a bending-dominated to a more efficient stretching-dominated mode. This TPMS topological enhancement strategy successfully achieved a simultaneous and substantial improvement in mechanical performance, offering a promising solution for the development of the next generation of high-performance bone implants.

采用选择性激光熔化（SLM）技术，成功设计并制备了Ti6Al4V合金的三周期最小表面（TPMS）增强Voronoi结构。TPMS拓扑结构的引入显著提高了Voronoi结构的抗压性能。具体来说，与纯Voronoi结构相比，弹性模量、屈服强度和极限强度提高了35%以上。与D-Voronoi和IWP-Voronoi结构相比，G-Voronoi结构具有优越的抗压性能和优异的结构稳定性，并通过有限元分析进一步阐明了潜在的增强机制。此外，基于Gibson-Ashby模型的分析表明，这种显著的抗压性能增强主要源于结构变形机制的根本转变，即从弯曲主导模式转向更有效的拉伸主导模式。这种TPMS拓扑增强策略成功地实现了机械性能的同步和实质性改善，为下一代高性能骨植入物的开发提供了有前途的解决方案。

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引用次数: 0

IF 3.9 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Vacuum

Pub Date : 2026-04-01 Epub Date: 2026-01-23 DOI: 10.1016/j.vacuum.2026.115134

Mikhail Popov , Pavel Pivovarov , Fedor Khorobrykh , Dmitry Sovyk , Victor Ralchenko

A comparative study of the wettability of ultrahard amorphous carbon (UAC), formed by sp³ bonds alone, and diamond (100) facets, has been performed experimentally using atomic force spectroscopy. The capillary forces for UAC and diamond are found to be similar within the 10 % measurement error. Based on a relationship between the capillary force and the contact angle for the substrates, it is concluded that the contact angles for hydrogenated diamond (81°) and ultrahard amorphous sp³ carbon are close.

利用原子力谱法对sp3键形成的超硬非晶碳（UAC）和金刚石（100）表面的润湿性进行了比较研究。在10%的测量误差范围内，发现UAC和金刚石的毛细力相似。基于毛细管力与衬底接触角的关系，得出氢化金刚石（81°）与超硬非晶sp3碳的接触角接近的结论。

引用次数: 0

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