Issues related to the thermal stability of front contacts, based on Cr-Au and Cr-Au-Ag-Au, to GaSb-based photovoltaic cells have been considered at the operational (the cell temperature is 50 oC) and standard conditions as well as at the forced thermal degradation (at 125 and 200 oC). It is shown that the photovoltaic converter with the silver-containing contact is preferable in terms of the stability of contact resistivity, external quantum yield, FF, VOC, and therefore, the cell efficiency and lifetime. The durability of the cells is determined at operational and elevated temperatures.
基于Cr-Au和Cr-Au- ag - au的前触点与gasb基光伏电池的热稳定性有关的问题已经在操作(电池温度为50℃)和标准条件下以及在强制热降解(125℃和200℃)下被考虑。结果表明，在接触电阻率、外量子产率、FF和VOC的稳定性以及电池效率和寿命方面，含银触点的光伏变换器具有较好的稳定性。电池的耐久性取决于操作温度和高温。
{"title":"Фронтальный контакт к GaSb-фотопреобразователям: свойства и температурная стабильность","authors":"С.В. Сорокина, Ф.Ю. Солдатенков, Н.С. Потапович, В.П. Хвостиков","doi":"10.21883/ftp.2023.01.54928.3692","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54928.3692","url":null,"abstract":"Issues related to the thermal stability of front contacts, based on Cr-Au and Cr-Au-Ag-Au, to GaSb-based photovoltaic cells have been considered at the operational (the cell temperature is 50 oC) and standard conditions as well as at the forced thermal degradation (at 125 and 200 oC). It is shown that the photovoltaic converter with the silver-containing contact is preferable in terms of the stability of contact resistivity, external quantum yield, FF, VOC, and therefore, the cell efficiency and lifetime. The durability of the cells is determined at operational and elevated temperatures.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74965324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55897.15k
И. Ю. Забавичев, Александр Сергеевич Пузанов, С. В. Оболенский
The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.
{"title":"Влияние процесса образования единичного кластера радиационных дефектов на переключение состояния транзисторной ячейки памяти","authors":"И. Ю. Забавичев, Александр Сергеевич Пузанов, С. В. Оболенский","doi":"10.21883/ftp.2023.04.55897.15k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55897.15k","url":null,"abstract":"The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"272 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76424970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55329.4459
Д. В. Номоконов, А. К. Бакаров, А. А. Быков
Abstract Shubnikov de Haas oscillations in selectively doped GaAs single quantum wells with AlAs/GaAs superlattice barriers has been studied at temperature T = 4.2 K in magnetic fields B < 1 Т. High-mobility heterostructures with thin spacer had been grown by molecular-beam epitaxy on (001) GaAs substrates. The mobilities of two-dimensional electron gas measured in two crystallographic directions [110] and [-110] differ from each other more than 50%. Properly adapted expression for Shubnikov de Haas oscillations amplitudes in anisotropic samples has been used for correct analysis of this oscillations. It was stated that quantum life-time in our heterostructures as measured by Shubnikov de Haas oscillations on Hall bars oriented in the directions [110] and [-110] varies less than 5%. Obtained results show that quantum life-time in two-dimensional electron system with anisotropic mobility is isotropic with aforementioned accuracy.
在温度T = 4.2 K、磁场B < 1 Т条件下，研究了具有AlAs/GaAs超晶格势垒的选择性掺杂GaAs单量子阱中的Shubnikov de Haas振荡。利用分子束外延技术在(001)GaAs衬底上生长出了具有薄间隔层的高迁移率异质结构。在两个晶体学方向[110]和[-110]测量的二维电子气的迁移率相差超过50%。在各向异性样品中采用适当的舒布尼科夫-德-哈斯振荡振幅表达式，以便正确地分析这种振荡。在[110]和[-110]方向的霍尔棒上，用舒布尼科夫-德哈斯振荡测量异质结构中的量子寿命变化小于5%。结果表明，具有各向异性迁移率的二维电子系统的量子寿命在上述精度下是各向同性的。
{"title":"Осцилляции Шубникова-де Гааза в двумерном электронном газе с анизотропной подвижностью","authors":"Д. В. Номоконов, А. К. Бакаров, А. А. Быков","doi":"10.21883/ftp.2023.02.55329.4459","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55329.4459","url":null,"abstract":"Abstract Shubnikov de Haas oscillations in selectively doped GaAs single quantum wells with AlAs/GaAs superlattice barriers has been studied at temperature T = 4.2 K in magnetic fields B < 1 Т. High-mobility heterostructures with thin spacer had been grown by molecular-beam epitaxy on (001) GaAs substrates. The mobilities of two-dimensional electron gas measured in two crystallographic directions [110] and [-110] differ from each other more than 50%. Properly adapted expression for Shubnikov de Haas oscillations amplitudes in anisotropic samples has been used for correct analysis of this oscillations. It was stated that quantum life-time in our heterostructures as measured by Shubnikov de Haas oscillations on Hall bars oriented in the directions [110] and [-110] varies less than 5%. Obtained results show that quantum life-time in two-dimensional electron system with anisotropic mobility is isotropic with aforementioned accuracy.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"77 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88019440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55332.4178
Ю.Г. Сидоров, Г. И. Сидоров, В. С. Варавин
Influence of water solutions with various pH and electrochemical treatment in cathode position on concentration of charge carriers in samples CdxHg1−xTe with x = 0.2−0.3 is investigated. Cathodic treatment cadmium-mercury-tellurium at small density current increases concentration of donors, and at high density acceptors are formed. It is supposed that hydroxyl groups create acceptors centers, introduce in interstitial cadmium-mercury-tellurium. At treatment for a long time (it is more than 20 h) or acceptors are formed with concentration at level of 1016 cm−3 (at high activity of hydrogen), or donors with concentration of 1014 cm−3 (at low activity of hydrogen) are uniform distribution on all thickness of cadmium-mercurytellurium film and does not vary with the subsequent increase in time of treatment.
{"title":"Вода --- источник электрически активных центров в CdHgTe","authors":"Ю.Г. Сидоров, Г. И. Сидоров, В. С. Варавин","doi":"10.21883/ftp.2023.02.55332.4178","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55332.4178","url":null,"abstract":"Influence of water solutions with various pH and electrochemical treatment in cathode position on concentration of charge carriers in samples CdxHg1−xTe with x = 0.2−0.3 is investigated. Cathodic treatment cadmium-mercury-tellurium at small density current increases concentration of donors, and at high density acceptors are formed. It is supposed that hydroxyl groups create acceptors centers, introduce in interstitial cadmium-mercury-tellurium. At treatment for a long time (it is more than 20 h) or acceptors are formed with concentration at level of 1016 cm−3 (at high activity of hydrogen), or donors with concentration of 1014 cm−3 (at low activity of hydrogen) are uniform distribution on all thickness of cadmium-mercurytellurium film and does not vary with the subsequent increase in time of treatment.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90821853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55327.4503
Е В Куницына, Я.А. Пархоменко, А. А. Пивоварова, Ю.П. Яковлев
The results of a study of the galvanomagnetic properties of indium arsenide grown by liquid-phase epitaxy are presented. It is shown that the use of the rare earth element holmium in the growth of InAs epitaxial layers makes it possible to reduce the electron concentration by two orders of magnitude to n=2.1•1015 cm−3 at T=77 K. This effect is due to the gettering of shallow background impurities with the formation of their compounds in the melt. With an increase in the holmium content of more than 0.12 mol.% the concentration of current carriers in the material begins to increase, while mobility decreases due to the influence of VAs – Ho donor centers. This method of gettering is promising for obtaining AIIIBV materials with a low concentration of current carriers, which are in demand in the optoelectronic industry.
{"title":"Геттерирование эпитаксиального арсенида индия редкоземельным элементом гольмием","authors":"Е В Куницына, Я.А. Пархоменко, А. А. Пивоварова, Ю.П. Яковлев","doi":"10.21883/ftp.2023.02.55327.4503","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55327.4503","url":null,"abstract":"The results of a study of the galvanomagnetic properties of indium arsenide grown by liquid-phase epitaxy are presented. It is shown that the use of the rare earth element holmium in the growth of InAs epitaxial layers makes it possible to reduce the electron concentration by two orders of magnitude to n=2.1•1015 cm−3 at T=77 K. This effect is due to the gettering of shallow background impurities with the formation of their compounds in the melt. With an increase in the holmium content of more than 0.12 mol.% the concentration of current carriers in the material begins to increase, while mobility decreases due to the influence of VAs – Ho donor centers. This method of gettering is promising for obtaining AIIIBV materials with a low concentration of current carriers, which are in demand in the optoelectronic industry.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82176777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55328.4124
М.Б. Шалимова, И В Белянина
The properties of MIS structures with yttrium, neodymium, samarium fluorides on germanium, neodymium and samarium fluorides on n and p silicon substrates, as well as Al-Y2O3-nSi, Al-Y2O3-pSi structures under conditions of high ambient humidity were studied. Additionally, the structures were exposed to an electric field of ~ 0.5 – 4 MV/cm. For MIS structures with films of yttrium, neodymium, and samarium fluoride on germanium, as well as neodymium and samarium fluoride on n and p silicon substrates, a clear increase in the maximum specific capacitance with increasing relative humidity of the medium is observed. It has been found that the incorporation of water into the structure of the REE film fluorides studied in this work is sorption and does not cause irreversible changes in the dielectric film at the studied temperatures.
{"title":"Изменение параметров МДП-структур с соединениями редкоземельных элементов в условиях повышенной влажности","authors":"М.Б. Шалимова, И В Белянина","doi":"10.21883/ftp.2023.02.55328.4124","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55328.4124","url":null,"abstract":"The properties of MIS structures with yttrium, neodymium, samarium fluorides on germanium, neodymium and samarium fluorides on n and p silicon substrates, as well as Al-Y2O3-nSi, Al-Y2O3-pSi structures under conditions of high ambient humidity were studied. Additionally, the structures were exposed to an electric field of ~ 0.5 – 4 MV/cm. For MIS structures with films of yttrium, neodymium, and samarium fluoride on germanium, as well as neodymium and samarium fluoride on n and p silicon substrates, a clear increase in the maximum specific capacitance with increasing relative humidity of the medium is observed. It has been found that the incorporation of water into the structure of the REE film fluorides studied in this work is sorption and does not cause irreversible changes in the dielectric film at the studied temperatures.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"89 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82334359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55630.4840
А. А. Быков, Д. В. Номоконов, А. В. Горан, И. С. Стрыгин, И. В. Марчишин, А. К. Бакаров
Impact of illumination on high-mobility dense 2D electron gas in selectively doped single GaAs quantum well with short-period AlAs/GaAs superlattice barriers at T = 4.2 K in magnetic fields B < 2 T has been studied. It was demonstrated that illumination at low temperatures gives rise to enhancement of electron density, mobility and quantum lifetime in studied heterostructures. The enhancement of quantum lifetime after illumination for single GaAs quantum well with modulated superlattice doping had been explained as consequence of decrease in effective concentration of remote ionized donors.
{"title":"Влияние подсветки на квантовое время жизни в селективно-легированных одиночных GaAs квантовых ямах с короткопериодными AlAs/GaAs-сверхрешеточными барьерами","authors":"А. А. Быков, Д. В. Номоконов, А. В. Горан, И. С. Стрыгин, И. В. Марчишин, А. К. Бакаров","doi":"10.21883/ftp.2023.03.55630.4840","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55630.4840","url":null,"abstract":"Impact of illumination on high-mobility dense 2D electron gas in selectively doped single GaAs quantum well with short-period AlAs/GaAs superlattice barriers at T = 4.2 K in magnetic fields B < 2 T has been studied. It was demonstrated that illumination at low temperatures gives rise to enhancement of electron density, mobility and quantum lifetime in studied heterostructures. The enhancement of quantum lifetime after illumination for single GaAs quantum well with modulated superlattice doping had been explained as consequence of decrease in effective concentration of remote ionized donors.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79050919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54924.4131
Ю.М. Басалаев, Е.Б. Дугинова, О Г Басалаева
Using the sublattice method and density functional theory, the electronic struc-ture of a LiTlTe2 crystal with the chalcopyrite structure was studied for the first time and the equilibrium parameters of the crystal lattice a=6.7526 Å, c=13.3037 Å, u(Te)=0.2423 were calculated. It has been established that the valence bands of the LiTlTe2 crystal and its closest analogue LiInTe2 actually coincide in topol-ogy, and the LiTlTe2 crystal is a direct-gap semiconductor with a band gap of 0.63 eV and a crystal splitting of 0.04 eV. The partial contributions of the densi-ty of states are analyzed and the features of the formation of the valence and conduction bands of LiInTe2 and LiTlTe2 crystals due to the contributions of their sublattices are revealed: the structure of the valence bands of both crystals is completely determined by the interaction in the cationic tetrahedra of InTe4 and TlTe4. The vibrational modes and elastic constants are calculated, confirm-ing the stability and mechanical stability of the LiTlTe2 crystal.
{"title":"Первопринципное исследование электронных, колебательных и упругих свойств кристаллов LiInTe-=SUB=-2-=/SUB=- и LiTlTe-=SUB=-2-=/SUB=-","authors":"Ю.М. Басалаев, Е.Б. Дугинова, О Г Басалаева","doi":"10.21883/ftp.2023.01.54924.4131","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54924.4131","url":null,"abstract":"Using the sublattice method and density functional theory, the electronic struc-ture of a LiTlTe2 crystal with the chalcopyrite structure was studied for the first time and the equilibrium parameters of the crystal lattice a=6.7526 Å, c=13.3037 Å, u(Te)=0.2423 were calculated. It has been established that the valence bands of the LiTlTe2 crystal and its closest analogue LiInTe2 actually coincide in topol-ogy, and the LiTlTe2 crystal is a direct-gap semiconductor with a band gap of 0.63 eV and a crystal splitting of 0.04 eV. The partial contributions of the densi-ty of states are analyzed and the features of the formation of the valence and conduction bands of LiInTe2 and LiTlTe2 crystals due to the contributions of their sublattices are revealed: the structure of the valence bands of both crystals is completely determined by the interaction in the cationic tetrahedra of InTe4 and TlTe4. The vibrational modes and elastic constants are calculated, confirm-ing the stability and mechanical stability of the LiTlTe2 crystal.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72966053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55634.4727
Н.В. Крыжановская, С.А. Блохин, И.С. Махов, Э.И. Моисеев, А.М. Надточий, Н.А. Фоминых, С.А. Минтаиров, Н. А. Калюжный, Ю. А. Гусева, М.М. Кулагина, Ф.И. Зубов, Е.С. Колодезный, Максим Владимирович Максимов, А. Е. Жуков
The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.
{"title":"Исследование p-i-n-фотодетектора с поглощающей средой на основе InGaAs/GaAs квантовых яма-точек","authors":"Н.В. Крыжановская, С.А. Блохин, И.С. Махов, Э.И. Моисеев, А.М. Надточий, Н.А. Фоминых, С.А. Минтаиров, Н. А. Калюжный, Ю. А. Гусева, М.М. Кулагина, Ф.И. Зубов, Е.С. Колодезный, Максим Владимирович Максимов, А. Е. Жуков","doi":"10.21883/ftp.2023.03.55634.4727","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55634.4727","url":null,"abstract":"The static and dynamic characteristics of waveguide photodetectors with an absorbing region based on InGaAs/GaAs quantum well-dots were studied at room temperature. The absorption band of InGaAs/GaAs quantum well-dots is in the spectral range from 900 to 1100 nm. The waveguide photodetectors have a width of 50 µm and a length of the absorbing region from 92 µm to 400 µm. A low dark current density (1.1 и 22 μA/cm^2 at -1 и -20 V) and cut off frequency of 5.6 GHz, limited by the time constant of a parasitic equivalent electric RC circuit, were obtained.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91093809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55625.4580
М.А. Суханов, А. К. Бакаров, К. С. Журавлев
In this work, the process of oxide removal from the InSb (001) surface was studied in-situ by high-energy electron diffraction in vacuum and under an antimony flux. The dependence of the oxide thickness on the annealing temperature was obtained. It has been found that the antimony flux slows down the process of oxide removal due to the oxide formation reaction. The oxide removal process was described by a system of kinetic equations, the activation energy of oxide decomposition was determined.
{"title":"Процесс десорбции оксида с поверхности InSb в потоке сурьмы","authors":"М.А. Суханов, А. К. Бакаров, К. С. Журавлев","doi":"10.21883/ftp.2023.03.55625.4580","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55625.4580","url":null,"abstract":"In this work, the process of oxide removal from the InSb (001) surface was studied in-situ by high-energy electron diffraction in vacuum and under an antimony flux. The dependence of the oxide thickness on the annealing temperature was obtained. It has been found that the antimony flux slows down the process of oxide removal due to the oxide formation reaction. The oxide removal process was described by a system of kinetic equations, the activation energy of oxide decomposition was determined.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"39 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85833794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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