Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55892.06k
В.Я. Алешкин, А О Рудаков, А.А. Дубинов
Работа посвящена выбору оптимальной ширины запрещенной зоны квантовой ямы для генерации двумерных плазмон-фононов в гетероструктурах CdHgTe/HgTe. Показано, что оптимальной эффективной шириной запрещенной зоны является ширина, немного превосходящая энергию продольного оптического фонона в барьере. Ключевые слова: гетероструктуры CdHgTe/HgTe с квантовыми ямами, генерация двумерных плазмон-фононов, оптимальная ширина запрещенной зоны.
{"title":"Оптимизация параметров гетероструктуры CdHgTe/HgTe с одиночной квантовой ямой для генерации плазмон-фононов","authors":"В.Я. Алешкин, А О Рудаков, А.А. Дубинов","doi":"10.21883/ftp.2023.04.55892.06k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55892.06k","url":null,"abstract":"Работа посвящена выбору оптимальной ширины запрещенной зоны квантовой ямы для генерации двумерных плазмон-фононов в гетероструктурах CdHgTe/HgTe. Показано, что оптимальной эффективной шириной запрещенной зоны является ширина, немного превосходящая энергию продольного оптического фонона в барьере. Ключевые слова: гетероструктуры CdHgTe/HgTe с квантовыми ямами, генерация двумерных плазмон-фононов, оптимальная ширина запрещенной зоны.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84523994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54931.3952
Алексей Сергеевич Токарев, О. А. Лапшина, А. А. Козырев
This paper reports on the study of the effect of ion cleaning of emitting cleaved facet of 9xx nm laser diodes based on InGaAs/AlGaAs/GaAs on their limiting radiation power. Measured maximal power and the percentage of laser diodes with a visual manifestation of catastrophic optical damage in the active region were analyzed. It was found that short-term (1 min) low-energy treatment with argon and hydrogen ions does not lead to changes in the parameters of laser diodes, while treatment with nitrogen ions results in a decrease in the maximal output power and an increase in the probability of catastrophic optical damage. It is also shown that the use of an ion source based on electron cyclotron resonance leads to better results compared to a End Hall source or radiofrequency source with inductively coupled plasma, due to the lower energy of the ions.
{"title":"Влияние ионной очистки поверхности излучающего скола 9хх нм лазерных диодов на основе InGaAs/AlGaAs/GaAs на их предельную мощность излучения","authors":"Алексей Сергеевич Токарев, О. А. Лапшина, А. А. Козырев","doi":"10.21883/ftp.2023.01.54931.3952","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54931.3952","url":null,"abstract":"This paper reports on the study of the effect of ion cleaning of emitting cleaved facet of 9xx nm laser diodes based on InGaAs/AlGaAs/GaAs on their limiting radiation power. Measured maximal power and the percentage of laser diodes with a visual manifestation of catastrophic optical damage in the active region were analyzed. It was found that short-term (1 min) low-energy treatment with argon and hydrogen ions does not lead to changes in the parameters of laser diodes, while treatment with nitrogen ions results in a decrease in the maximal output power and an increase in the probability of catastrophic optical damage. It is also shown that the use of an ion source based on electron cyclotron resonance leads to better results compared to a End Hall source or radiofrequency source with inductively coupled plasma, due to the lower energy of the ions.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82830498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54923.3994
В.Н. Бессолов, Е.В. Коненкова, С.Н. Родин
Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярного GaN(1122) слоя при эпитаксии из металлоорганических соединений на подложках Si(113), на поверхности которых сформированы U-образные канавки с размером элементов <100 нм (подложка-NP-Si(113)). Установлено, что NP-Si(113) подложки с буферным слоем AlN стимулируют формирование островков, ограненных плоскостями m-GaN, c-GaN. Показано, что наблюдается преимущественный рост грани m-GaN по сравнению с c-GaN. Экспериментальные результаты соответствуют принципу отбора Гиббса--Кюри--Вульфа, но с учетом упругих напряжений в плоскости c-GaN. Ключевые слова: полуполярный нитрид галлия, нано-структурированная подложка, кремний.
{"title":"Начальные стадии роста слоя GaN(11=22) на наноструктурированной подложке Si(113)","authors":"В.Н. Бессолов, Е.В. Коненкова, С.Н. Родин","doi":"10.21883/ftp.2023.01.54923.3994","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54923.3994","url":null,"abstract":"Методом растровой электронной микроскопии изучались начальные стадии формирования полуполярного GaN(1122) слоя при эпитаксии из металлоорганических соединений на подложках Si(113), на поверхности которых сформированы U-образные канавки с размером элементов <100 нм (подложка-NP-Si(113)). Установлено, что NP-Si(113) подложки с буферным слоем AlN стимулируют формирование островков, ограненных плоскостями m-GaN, c-GaN. Показано, что наблюдается преимущественный рост грани m-GaN по сравнению с c-GaN. Экспериментальные результаты соответствуют принципу отбора Гиббса--Кюри--Вульфа, но с учетом упругих напряжений в плоскости c-GaN. Ключевые слова: полуполярный нитрид галлия, нано-структурированная подложка, кремний.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"34 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77619917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55335.3545
С. В. Булярский, В С Белов, Г.Г. Гусаров, А. В. Лакалин, К.И. Литвинова, А. П. Орлов
Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al-Al2O3-Ta2O5-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics.
{"title":"Определение механизмов протекания тока в структурах из двух слоев диэлектриков","authors":"С. В. Булярский, В С Белов, Г.Г. Гусаров, А. В. Лакалин, К.И. Литвинова, А. П. Орлов","doi":"10.21883/ftp.2023.02.55335.3545","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55335.3545","url":null,"abstract":"Diodes of type Metal-Dielectric 1-Dielectric 2-Metal are promising for use in devices paired with antennas-rectennas. To create diodes with the characteristics required for operation, it is necessary to understand the mechanisms of current transport in both dielectrics and their contacts with metals. To solve this problem, it is necessary to develop an algorithm for dividing the general current-voltage characteristic into characteristics of individual contacts, the analysis of which will also allow us to investigate the problems of the properties of defects in the dielectrics that make up the diode. In this paper, the solution of the above problems is presented on the example of the Al-Al2O3-Ta2O5-Ni diode. The authors showed how one can divide the current-voltage characteristic into components, calculate potential barriers at the boundaries of metals with contacting dielectrics, and determine the concentration and energy characteristics of structural defects in dielectrics.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"110 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87693329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56207.4975
Р.Я. Расулов, Ф О Касымов, Н.У. Кодиров, У.М. Исомиддинова
The theory of interband two-photon absorption of a strong light wave in semiconductors with a complex band is developed. An analytical expression is obtained for the probability of a two-photon interband transition, which contains a dependence on the intensity, polarization vector, and frequency of the absorbed light, as well as on the band parameters of the semiconductor, where the contribution of the Rabi effect to the coefficients of two-quantum absorption of light is taken into account. It is shown that the shape of the absorption edge and linear-circular dichroism depends on the degree of light polarization and on the Rabi parameter.
{"title":"Двухфотонное внутризонное поглощение поляризованного света и его линейно-циркулярный дихроизм в алмазоподобных полупроводниках","authors":"Р.Я. Расулов, Ф О Касымов, Н.У. Кодиров, У.М. Исомиддинова","doi":"10.21883/ftp.2023.05.56207.4975","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56207.4975","url":null,"abstract":"The theory of interband two-photon absorption of a strong light wave in semiconductors with a complex band is developed. An analytical expression is obtained for the probability of a two-photon interband transition, which contains a dependence on the intensity, polarization vector, and frequency of the absorbed light, as well as on the band parameters of the semiconductor, where the contribution of the Rabi effect to the coefficients of two-quantum absorption of light is taken into account. It is shown that the shape of the absorption edge and linear-circular dichroism depends on the degree of light polarization and on the Rabi parameter.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84798041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56197.17k
А.С. Дашков, Л. Г. Герчиков, Л. И. Горай, Н.А. Костромин, А. Д. Буравлёв
In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.
{"title":"Терагерцовые излучатели с активной областью на основе сверхмногопериодных решеток AlGaAs/GaAs","authors":"А.С. Дашков, Л. Г. Герчиков, Л. И. Горай, Н.А. Костромин, А. Д. Буравлёв","doi":"10.21883/ftp.2023.05.56197.17k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56197.17k","url":null,"abstract":"In this article, several designs of the active region of the THz radiation source are considered, taking into account grown super-multiperiod AlGaAs/GaAs superlattices. For the proposed designs, the principal device characteristics are computed: energy band diagram, gain spectrum, and transport characteristics. Based on the calculation results, the authors proposed an optimal design of the active region of a tunable THz radiation source.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"87 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76343084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55626.4704
Д.А. Алмаев, А.В. Алмаев, В. И. Николаев, П.Н. Бутенко, М.П. Щеглов, А.В. Чикиряка, А.И. Печников
The effect of H2, NH3, CO and O2 on the electrically conductive properties of In2O3 films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In2O3 films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH3 was obtained, which exceeded 33 arb.units at a temperature of 400°C and a gas concentration of 1000 ppm. A qualitative mechanism of gas sensitivity of In2O3 films is proposed. The obtained gas-sensitive characteristics are compared with known NH3 sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity
{"title":"Высокая чувствительность пленок оксида индия, полученных методом хлоридной газофазной эпитаксии, к аммиаку","authors":"Д.А. Алмаев, А.В. Алмаев, В. И. Николаев, П.Н. Бутенко, М.П. Щеглов, А.В. Чикиряка, А.И. Печников","doi":"10.21883/ftp.2023.03.55626.4704","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55626.4704","url":null,"abstract":"The effect of H2, NH3, CO and O2 on the electrically conductive properties of In2O3 films grown by halide vapor phase epitaxy has been studied. In the temperature range of 200−550°C, In2O3 films demonstrate gas sensitivity to all considered gases, a relatively high operation speed and repeatability of cycles. The greatest response to NH3 was obtained, which exceeded 33 arb.units at a temperature of 400°C and a gas concentration of 1000 ppm. A qualitative mechanism of gas sensitivity of In2O3 films is proposed. The obtained gas-sensitive characteristics are compared with known NH3 sensors based on various materials. It is shown that the method of halide vapor phase epitaxy makes it possible to obtain indium oxide films with high gas sensitivity","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"42 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75319082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56196.14k
М.Н. Батаев, Маргарита Сергеевна Кузнецова, Д. В. Панькин, М. Б. Смирнов, С. Ю. Вербин, И. В. Игнатьев, И. А. Елисеев, В Ю Давыдов, Андрей Николаевич Смирнов, Е. В. Колобкова
The photoluminescence (PL) spectra of CsPbBr3 perovskite nanocrystals grown in a fluorophosphate glass matrix exhibit phonon replicas of the exciton line. The dependence of intensity of the phonon sidebands are simulated taking into account the difference in the curvature of the excited and ground adiabatic potentials. The Raman spectra of CsPbBr3 nanocrystals are measured. Calculations based on the density functional theory is performed to obtain the spectrum of phonon states of these crystals in the orthorhombic phase. The phonon frequencies observed in the PL and Raman spectra are compared with the calculation results.
{"title":"Электрон-фононное взаимодействие в нанокристаллах перовскитов во фторфосфатном стекле","authors":"М.Н. Батаев, Маргарита Сергеевна Кузнецова, Д. В. Панькин, М. Б. Смирнов, С. Ю. Вербин, И. В. Игнатьев, И. А. Елисеев, В Ю Давыдов, Андрей Николаевич Смирнов, Е. В. Колобкова","doi":"10.21883/ftp.2023.05.56196.14k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56196.14k","url":null,"abstract":"The photoluminescence (PL) spectra of CsPbBr3 perovskite nanocrystals grown in a fluorophosphate glass matrix exhibit phonon replicas of the exciton line. The dependence of intensity of the phonon sidebands are simulated taking into account the difference in the curvature of the excited and ground adiabatic potentials. The Raman spectra of CsPbBr3 nanocrystals are measured. Calculations based on the density functional theory is performed to obtain the spectrum of phonon states of these crystals in the orthorhombic phase. The phonon frequencies observed in the PL and Raman spectra are compared with the calculation results.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78400039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55901.4851
С.О. Слипченко, О С Соболева, А.А. Подоскин, Ю.К. Кириченко, Т. А. Багаев, И. В. Яроцкая, Н.А. Пихтин
A series of heterostructure designs of low-voltage InP homothyristors have been investigated using numerical simulation methods. The design with a space charge layer formed in the p-base region of the n-p-n transistor part was considered as the base one. The dynamic characteristics and processes that determine the rate of transition to the on state are investigated. It is shown that as the p-base thickness increases from 1 to 2.6 μm, the maximum on-state currents increase from 70 to 90 A, while the minimum turn-on transition time is 11 ns at a maximum blocking voltage of 55 V. It is shown that the operation efficiency in the on state is determined by the residual voltage. Residual voltage decreases with a decrease in the thickness of the p-base.
{"title":"Исследование динамики включения низковольтных InP-гомотиристоров","authors":"С.О. Слипченко, О С Соболева, А.А. Подоскин, Ю.К. Кириченко, Т. А. Багаев, И. В. Яроцкая, Н.А. Пихтин","doi":"10.21883/ftp.2023.04.55901.4851","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55901.4851","url":null,"abstract":"A series of heterostructure designs of low-voltage InP homothyristors have been investigated using numerical simulation methods. The design with a space charge layer formed in the p-base region of the n-p-n transistor part was considered as the base one. The dynamic characteristics and processes that determine the rate of transition to the on state are investigated. It is shown that as the p-base thickness increases from 1 to 2.6 μm, the maximum on-state currents increase from 70 to 90 A, while the minimum turn-on transition time is 11 ns at a maximum blocking voltage of 55 V. It is shown that the operation efficiency in the on state is determined by the residual voltage. Residual voltage decreases with a decrease in the thickness of the p-base.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86471524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55635.4163
А.С. Дашков, Н.А. Костромин, А. В. Бабичев, Л. И. Горай, А. Ю. Егоров
The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30 % is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 µm spectral range.
{"title":"Моделирование зонной структуры сверхрешеток на основе \"разбавленных\" нитридов","authors":"А.С. Дашков, Н.А. Костромин, А. В. Бабичев, Л. И. Горай, А. Ю. Егоров","doi":"10.21883/ftp.2023.03.55635.4163","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55635.4163","url":null,"abstract":"The paper describes an algorithm for computing the interband transition energy for superlattices of quaternary solid solutions of diluted nitrides. Using the described method, the authors have conducted several numerical simulations of test structures with InGaAsN quantum wells for the method verification using experimental data and comparison with other approaches. Simulation results showed the validity of the used approach. The hybridization parameter estimation method for Indium mole-fraction below 30 % is presented. Based on simulation results, the authors propose InGaAs/GaAsN superlattices' parameters for the implementation of the source emitting in the 1.3 µm spectral range.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73089336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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