Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56201.28k
А Д Буравлев, А.Н. Казакин, Ю. А. Нащекина, А. В. Нащекин, Е.В. Убыйвовк, В.А. Астраханцева, Андрей Викторович Осипов, Г.В. Святец, Сергей Арсеньевич Кукушкин
При проведении экспериментов по синтезу слоев карбида кремния на монокристаллических подложках кремния с помощью метода согласованного замещения атомов обнаружено, что образование тонких пленок карбида кремния может сопровождаться формированием массивов нанотрубок карбида кремния произрастающих в глубь кремниевых подложек. Таким образом, впервые обнаружен новый механизм образования карбид-кремниевых нанотрубок ---"сверху-вниз". Ключевые слова: карбид кремния, нанотрубки, пар-жидкость-кристалл, формирование наноструктур.
{"title":"Формирование биосовместимых SiC-нанотрубок \"сверху-вниз\"","authors":"А Д Буравлев, А.Н. Казакин, Ю. А. Нащекина, А. В. Нащекин, Е.В. Убыйвовк, В.А. Астраханцева, Андрей Викторович Осипов, Г.В. Святец, Сергей Арсеньевич Кукушкин","doi":"10.21883/ftp.2023.05.56201.28k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56201.28k","url":null,"abstract":"При проведении экспериментов по синтезу слоев карбида кремния на монокристаллических подложках кремния с помощью метода согласованного замещения атомов обнаружено, что образование тонких пленок карбида кремния может сопровождаться формированием массивов нанотрубок карбида кремния произрастающих в глубь кремниевых подложек. Таким образом, впервые обнаружен новый механизм образования карбид-кремниевых нанотрубок ---\"сверху-вниз\". Ключевые слова: карбид кремния, нанотрубки, пар-жидкость-кристалл, формирование наноструктур.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85983852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54933.4545
Л.А. Снигирев, В.И. Ушанов, А. А. Иванов, Н.А. Берт, Д. А. Кириленко, М. А. Яговкина, В. В. Преображенский, М. А. Путято, Б.Р. Семягин, И. А. Касаткин, В.В. Чалдышев
Методом молекулярно-лучевой эпитаксии при низкой температуре с использованием прерываний роста успешно выращены эпитаксиальные слои AlxGa1-xAs1-ySby с содержанием алюминия x~60% и содержанием сурьмы y~3%. Путем последующего отжига в полупроводниковой матрице сформирована развитая система нановключений AsSb. Увеличенное окно прозрачности полученного метаматериала позволило надежно документировать широкую полосу поглощения света вблизи края межзонного поглощения полупроводниковой матрицы AlxGa1-xAs1-ySby. Параметры наблюдаемой полосы экстинкции позволяют связать такое поглощение света с плазмонным резонансом в системе нановключений AsSb. Ключевые слова: молекулярно-лучевая эпитаксия, рентгенодифракционный анализ, просвечивающая электронная микроскопия, оптические свойства, плазмонный резонанс.
{"title":"Структура и оптические свойства композитного метаматериала AsSb-Al-=SUB=-0.6-=/SUB=-Ga-=SUB=-0.4-=/SUB=-As-=SUB=-0.97-=/SUB=-Sb-=SUB=-0.03-=/SUB=-","authors":"Л.А. Снигирев, В.И. Ушанов, А. А. Иванов, Н.А. Берт, Д. А. Кириленко, М. А. Яговкина, В. В. Преображенский, М. А. Путято, Б.Р. Семягин, И. А. Касаткин, В.В. Чалдышев","doi":"10.21883/ftp.2023.01.54933.4545","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54933.4545","url":null,"abstract":"Методом молекулярно-лучевой эпитаксии при низкой температуре с использованием прерываний роста успешно выращены эпитаксиальные слои AlxGa1-xAs1-ySby с содержанием алюминия x~60% и содержанием сурьмы y~3%. Путем последующего отжига в полупроводниковой матрице сформирована развитая система нановключений AsSb. Увеличенное окно прозрачности полученного метаматериала позволило надежно документировать широкую полосу поглощения света вблизи края межзонного поглощения полупроводниковой матрицы AlxGa1-xAs1-ySby. Параметры наблюдаемой полосы экстинкции позволяют связать такое поглощение света с плазмонным резонансом в системе нановключений AsSb. Ключевые слова: молекулярно-лучевая эпитаксия, рентгенодифракционный анализ, просвечивающая электронная микроскопия, оптические свойства, плазмонный резонанс.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89745445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-09-02DOI: 10.21883/ftp.2022.06.52592.9819
В. В. Болотов, Е. В. Князев, И. В. Пономарева, К.Е. Ивлев
Abstract The work is devoted to the creation of a sensor structure based on a porous silicon membrane. The structure under study integrates a porous layer used as a gas transport layer and a gas sensitive layer of non-stoichiometric tin oxide. The paper investigates the morphology of the structure and shows the gas permeability of the membrane on porous silicon. The gas sensitivity of the test structure obtained by passing a gas- air mixture containing NO2 has been studied.
{"title":"Многослойная сенсорная структура на основе пористого кремния","authors":"В. В. Болотов, Е. В. Князев, И. В. Пономарева, К.Е. Ивлев","doi":"10.21883/ftp.2022.06.52592.9819","DOIUrl":"https://doi.org/10.21883/ftp.2022.06.52592.9819","url":null,"abstract":"\u0000 Abstract The work is devoted to the creation of a\u0000sensor structure based on a porous silicon membrane. The\u0000structure under study integrates a porous layer used as a gas\u0000transport layer and a gas sensitive layer of non-stoichiometric tin\u0000oxide. The paper investigates the morphology of the structure and\u0000shows the gas permeability of the membrane on porous silicon.\u0000The gas sensitivity of the test structure obtained by passing a gas-\u0000air mixture containing NO2 has been studied.\u0000","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"151 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76856975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-07-10DOI: 10.21883/FTP.2022.01.51822.9733
I. Drichko, I. Smirnov, Y. Galperin, P. A. Dementev, M. Rybin
Contactless acoustic methods were used to determine electrical parameters - electrical conductivity, carrier mobility and their concentration - in single-layer graphene deposited on the surface of lithium niobate.
采用非接触声学方法测定沉积在铌酸锂表面的单层石墨烯的电学参数——电导率、载流子迁移率及其浓度。
{"title":"Низкотемпературные электрические свойства CVD графена на LiNbO-=SUB=-3-=/SUB=-: акустические исследования","authors":"I. Drichko, I. Smirnov, Y. Galperin, P. A. Dementev, M. Rybin","doi":"10.21883/FTP.2022.01.51822.9733","DOIUrl":"https://doi.org/10.21883/FTP.2022.01.51822.9733","url":null,"abstract":"\u0000 Contactless acoustic methods were used to determine electrical parameters - electrical conductivity, carrier mobility and their concentration - in single-layer graphene deposited on the surface of lithium niobate.\u0000","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85360962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.06.52595.9786
O.B. Александров
A quantitative model of the dimensional effect — dependence of surface states on the gate size in MOS-structures subjected to ionizing irradiation has been developed. It is assumed that the dimensional effect is due to the exodus of hydrogen released from hydrogen-containing hole traps through the butt- ends of a two-dimensional MOS-structure. The effect is described by a system of diffusion-kinetic equations solved together with the Poisson equation. The influence of technological treatments and regimes of thermal oxidation on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is the accelerated by ionizing irradiation out-diffusion of neutral hydrogen atoms.
{"title":"Размерный эффект в МОП-структурах при ионизирующем облучении","authors":"O.B. Александров","doi":"10.21883/ftp.2022.06.52595.9786","DOIUrl":"https://doi.org/10.21883/ftp.2022.06.52595.9786","url":null,"abstract":"A quantitative model of the dimensional effect — dependence of surface states on the gate size in MOS-structures subjected to ionizing irradiation has been developed. It is assumed that the dimensional effect is due to the exodus of hydrogen released from hydrogen-containing hole traps through the butt- ends of a two-dimensional MOS-structure. The effect is described by a system of diffusion-kinetic equations solved together with the Poisson equation. The influence of technological treatments and regimes of thermal oxidation on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is the accelerated by ionizing irradiation out-diffusion of neutral hydrogen atoms.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75176304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.04.52194.9781
Н.Н. Агеева, И. Л. Броневой, Д. Н. Забегаев, А. Н. Кривоносов
В начале мощной оптической пикосекундной накачки слоя GaAs гетероструктуры AlxGa1-xAs-GaAs-AlxGa1-xAs в нем возникает стимулированное пикосекундное излучение. Возрастание со временем плотности энергии каждой спектральной компоненты излучения в ее активной среде происходит экспоненциально до насыщения усиления, далее возрастание линейное. В настоящей работе экспериментально определено, в зависимости от каких параметров спектральной компоненты излучения и по какому закону меняется: (а) время (отсчитываемое от начала стимулированного излучения), через которое происходит переход от экспоненциального возрастания к линейному; (б) плотность энергии компоненты в "момент" перехода; (в) коэффициент усиления на этапе линейного возрастания плотности энергии. В Заключении суммируются явления при насыщении усиления, обнаруженные в наших работах. Ключевые слова: стимулированное пикосекундное излучение, арсенид галлия, спектральные компоненты излучения, характерное время релаксации излучения, насыщение усиления, энергетический транспорт носителей заряда, скорость вынужденной рекомбинации.
{"title":"Переход от экспоненциального к линейному возрастанию плотности энергии спектральной компоненты пикосекундного стимулированного излучения GaAs при насыщении усиления","authors":"Н.Н. Агеева, И. Л. Броневой, Д. Н. Забегаев, А. Н. Кривоносов","doi":"10.21883/ftp.2022.04.52194.9781","DOIUrl":"https://doi.org/10.21883/ftp.2022.04.52194.9781","url":null,"abstract":"В начале мощной оптической пикосекундной накачки слоя GaAs гетероструктуры AlxGa1-xAs-GaAs-AlxGa1-xAs в нем возникает стимулированное пикосекундное излучение. Возрастание со временем плотности энергии каждой спектральной компоненты излучения в ее активной среде происходит экспоненциально до насыщения усиления, далее возрастание линейное. В настоящей работе экспериментально определено, в зависимости от каких параметров спектральной компоненты излучения и по какому закону меняется: (а) время (отсчитываемое от начала стимулированного излучения), через которое происходит переход от экспоненциального возрастания к линейному; (б) плотность энергии компоненты в \"момент\" перехода; (в) коэффициент усиления на этапе линейного возрастания плотности энергии. В Заключении суммируются явления при насыщении усиления, обнаруженные в наших работах. Ключевые слова: стимулированное пикосекундное излучение, арсенид галлия, спектральные компоненты излучения, характерное время релаксации излучения, насыщение усиления, энергетический транспорт носителей заряда, скорость вынужденной рекомбинации.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75680531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.01.51812.9729
М.М. Соболев, Ф.Ю. Солдатенков
The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.
{"title":"Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона","authors":"М.М. Соболев, Ф.Ю. Солдатенков","doi":"10.21883/ftp.2022.01.51812.9729","DOIUrl":"https://doi.org/10.21883/ftp.2022.01.51812.9729","url":null,"abstract":"The results of experimental studies of capacitance– voltage characteristics, spectra of deep-level transient spectroscopy of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by liquid-phase epitaxy at a crystallization temperature of 900C from one solution–melt due to autodoping with background impurities, in a hydrogen or argon ambient, before and after irradiation with neutrons. After neutron irradiation, deep-level transient spectroscopy spectra revealed wide zones of defect clusters with acceptor-like negatively charged traps in the n0-layer, which arise as a result of electron emission from states located above the middle of the band gap. It was found that the differences in capacitance–voltage characteristics of the structures grown in hydrogen or argon ambient after irradiation are due to different doses of irradiation of GaAs p+−p0−i−n0 structures and different degrees of compensation of shallow donor impurities by deep traps in the layers.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81885697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.12.54509.4129
А. Б. Логинов, С.Н. Бокова-Сирош, П.В. Федотов, И. В. Сапков, Д. Н. Хмеленин, Р. Р. Исмагилов, Е. Д. Образцова, Б.А. Логинов, А.Н. Образцов
Molybdenum disulfide is a crystalline material which attracts considerable attention due to explicit two-dimensional cha- racter of its electronic properties. To obtain MoS2 films thermally evaporated molybdenum and gaseous H2S were used as precursors in this work. As a result of chemical reaction of these precursors films consisting of flake-like of nanometer thickness assembled from parallel atomic layers with predominantly perpendicular (with respect to substrate surface) orientation were deposited on the surface of Si substrate. In this work we investigate the dependence of film morphology on deposition time, substrate temperature and concentration of precursors in gaseous phase. Presence of mono- and bi-layered structures in the film was revealed using Raman spectroscopy and electron microscopy. Dependence of photoluminescence properties on size of crystallites in produced films was also studied.
{"title":"Получение и свойства мезопористых пленок MoS-=SUB=-2-=/SUB=-","authors":"А. Б. Логинов, С.Н. Бокова-Сирош, П.В. Федотов, И. В. Сапков, Д. Н. Хмеленин, Р. Р. Исмагилов, Е. Д. Образцова, Б.А. Логинов, А.Н. Образцов","doi":"10.21883/ftp.2022.12.54509.4129","DOIUrl":"https://doi.org/10.21883/ftp.2022.12.54509.4129","url":null,"abstract":"Molybdenum disulfide is a crystalline material which attracts considerable attention due to explicit two-dimensional cha- racter of its electronic properties. To obtain MoS2 films thermally evaporated molybdenum and gaseous H2S were used as precursors in this work. As a result of chemical reaction of these precursors films consisting of flake-like of nanometer thickness assembled from parallel atomic layers with predominantly perpendicular (with respect to substrate surface) orientation were deposited on the surface of Si substrate. In this work we investigate the dependence of film morphology on deposition time, substrate temperature and concentration of precursors in gaseous phase. Presence of mono- and bi-layered structures in the film was revealed using Raman spectroscopy and electron microscopy. Dependence of photoluminescence properties on size of crystallites in produced films was also studied.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81930016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.09.53417.9868
В.М. Калыгина, Ольга Сергеевна Киселева, Б.О. Кушнарев, Владимир Лукич Олейник, Ю. С. Петрова, А.В. Цымбалов
The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of Nd = 9.5ˑ1014 cm–3 concentration. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film.
{"title":"Фотодиоды на основе структур Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/n-GaAs, способные работать в автономном режиме","authors":"В.М. Калыгина, Ольга Сергеевна Киселева, Б.О. Кушнарев, Владимир Лукич Олейник, Ю. С. Петрова, А.В. Цымбалов","doi":"10.21883/ftp.2022.09.53417.9868","DOIUrl":"https://doi.org/10.21883/ftp.2022.09.53417.9868","url":null,"abstract":"The electrical and photoelectric characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of Nd = 9.5ˑ1014 cm–3 concentration. The thickness of the oxide film was 120 nm. Measurements at a frequency of 106 Hz have shown that the capacitance-voltage and conductance-voltage dependences are described by curves characteristic of metal-insulator-semiconductor structures and exhibit low sensitivity to radiation with λ = 254 nm. When operating on a constant signal, the samples exhibit the properties of a photodiode and are able to work offline. The photoelectric characteristics of the detectors during continuous exposure to radiation with λ = 254 nm are determined by the high density of traps at the Ga2O3/GaAs interface and in the oxide film.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"71 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85885358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.21883/ftp.2022.12.54512.4291
К. М. Морозов, А.В. Белоновский, М. А. Калитеевский
Metal-dielectric photonic structures with organic materials 4,4-bis(N-carbazolyl)-1,1-biphenyl and 4,4′-bis[4-(di-ptolylamino)styryl] biphenyl) as light emitting layers were investigated. The formation of the polaritonic modes in the investigated structures was experimentally demonstrated and a correlation between theoretical and experimental dispersion was shown. Was shown, that increase in interaction between organic exciton and optical mode leads to a significant decrease in the lower polariton emission bandwidth.
{"title":"Анализ динамики затухания люминесценции в металл-диэлектрических фотонных структурах с органическими слоями","authors":"К. М. Морозов, А.В. Белоновский, М. А. Калитеевский","doi":"10.21883/ftp.2022.12.54512.4291","DOIUrl":"https://doi.org/10.21883/ftp.2022.12.54512.4291","url":null,"abstract":"Metal-dielectric photonic structures with organic materials 4,4-bis(N-carbazolyl)-1,1-biphenyl and 4,4′-bis[4-(di-ptolylamino)styryl] biphenyl) as light emitting layers were investigated. The formation of the polaritonic modes in the investigated structures was experimentally demonstrated and a correlation between theoretical and experimental dispersion was shown. Was shown, that increase in interaction between organic exciton and optical mode leads to a significant decrease in the lower polariton emission bandwidth.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"67 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79535345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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