Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56199.26k
И.В. Илькив, В.В. Лендяшова, Б.Б. Бородин, В.Г. Талалаев, Т. Шугабаев, Р.Р. Резник, Г. Э. Цырлин
Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.
{"title":"Формирование наноостровков InAs на поверхности кремния и гетероструктур на их основе","authors":"И.В. Илькив, В.В. Лендяшова, Б.Б. Бородин, В.Г. Талалаев, Т. Шугабаев, Р.Р. Резник, Г. Э. Цырлин","doi":"10.21883/ftp.2023.05.56199.26k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56199.26k","url":null,"abstract":"Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"2010 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86278195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56198.18k
В.В. Цыпленков, Р.Х. Жукавин, В.Н. Шастин
In this paper, we propose a method for resonant optical excitation of ortho states of two-electron donors in silicon, direct transitions to which from the ground state are extremely suppressed in case of a weak spin-orbit coupling. Excitation is proposed to be carried out using the points of anti-crossing of ortho and para states under conditions of uniaxial stress of the crystal. In these points the states cannot be unambiguously assigned to any group of states with a certain spin, as a result of which the optical transition becomes allowed. The structure of the energy levels of two-electron impurities is such that the excitation of such state almost unambiguously leads to the population of the underlying ortho-type state, which is expected to be very long-lived in the case of weak spin-orbit coupling. In the present work, theoretical estimates of the cross sections for optical transitions in the vicinity of the level anticrossing point as a function of strain for strong and weak spin-orbit coupling are made.
{"title":"Оптическое возбуждение спин-триплетных состояний двухэлектронных доноров в кремнии","authors":"В.В. Цыпленков, Р.Х. Жукавин, В.Н. Шастин","doi":"10.21883/ftp.2023.05.56198.18k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56198.18k","url":null,"abstract":"In this paper, we propose a method for resonant optical excitation of ortho states of two-electron donors in silicon, direct transitions to which from the ground state are extremely suppressed in case of a weak spin-orbit coupling. Excitation is proposed to be carried out using the points of anti-crossing of ortho and para states under conditions of uniaxial stress of the crystal. In these points the states cannot be unambiguously assigned to any group of states with a certain spin, as a result of which the optical transition becomes allowed. The structure of the energy levels of two-electron impurities is such that the excitation of such state almost unambiguously leads to the population of the underlying ortho-type state, which is expected to be very long-lived in the case of weak spin-orbit coupling. In the present work, theoretical estimates of the cross sections for optical transitions in the vicinity of the level anticrossing point as a function of strain for strong and weak spin-orbit coupling are made.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"67 4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87759490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54932.4184
А. В. Бабичев, С.Д. Комаров, Ю.С. Ткач, В.Н. Неведомский, С.А. Блохин, Н.В. Крыжановская, А.Г. Гладышев, Л.Я. Карачинский, И.И. Новиков
The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular–beam epitaxy according to the Stransky-Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.
{"title":"Исследование фотолюминесценции в системе InGaAs/GaAs с квантовыми точками спектрального диапазона 1100 нм","authors":"А. В. Бабичев, С.Д. Комаров, Ю.С. Ткач, В.Н. Неведомский, С.А. Блохин, Н.В. Крыжановская, А.Г. Гладышев, Л.Я. Карачинский, И.И. Новиков","doi":"10.21883/ftp.2023.01.54932.4184","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54932.4184","url":null,"abstract":"The results of studying the optical properties of InGaAs quantum dots are presented. Single-layer InGaAs quantum dots with a height of 5.3, 3.6 and 2.6 monolayers, as well as three-stacked layers of tunnel-uncoupled quantum dots with a height of 2.6 monolayers were formed by molecular–beam epitaxy according to the Stransky-Krastanov mechanism on GaAs substrates, using the partial capping and annealing technique. A decrease in the size of quantum dots makes it possible to carry out a blueshift of the photoluminescence spectrum maximum from 1200 nm to 1090 nm, and an increase in the number of QD layers makes it possible to compensate for the decrease in the peak intensity. It is shown that this type of quantum dots is suitable for creating the lasers active regions with a vertical microcavity for neuromorphic computing.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87271961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55627.4915
М. Ю. Чернов, В. А. Соловьев, Сергей Владимирович Иванов
Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers InxAl1-xAs/GaAs with maximum In content xmax ≥ 0.77 and different non-linear graded composition profiles (x ∝ z1/n) are calculated. The effect of the initial In composition (xmin) of InxAl1-xAs buffer layer with convex-graded (n = 2) composition profile on misfit dislocation density as well as amount of residual stresses at its top part is considered. Using computational approach, it was shown that a dislocation-free region is formed under thin tensile-strained GaAs layer (1–10 nm) inserted into InAlAs metamorphic buffer layer, which agrees with experimental data obtained early by transmission electron microscopy. Novel non-linear graded composition profile of metamorphic buffer layer has been proposed, which results in twice reduction of misfit dislocation density as compared to the convex-graded one. In addition, equilibrium distributions of misfit dislocation density in the HEMT heterostructures with two-dimensional electron channel In0.75Ga0.25As/In0.75Al0.25As, which are based on InxAl1-xAs/GaAs metamorphic buffer layer of various designs, are calculated. The values of inverse steps (∆), representing the difference between the maximum In content of InxAl1-xAs (xmax) and In content of In0.75Al0.25As virtual substrate, at which relaxation of the elastic strains in 2D channel In0.75Ga0.25As/In0.75Al0.25As doesn’t occur, are calculated for metamorphic buffer layers InxAl1-xAs with convex-graded and optimized non-linear graded composition profiles.
{"title":"Снижение плотности дислокаций в метаморфных гетероструктурах путем оптимизации конструкции буферного слоя с нелинейным профилем изменением состава","authors":"М. Ю. Чернов, В. А. Соловьев, Сергей Владимирович Иванов","doi":"10.21883/ftp.2023.03.55627.4915","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55627.4915","url":null,"abstract":"Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers InxAl1-xAs/GaAs with maximum In content xmax ≥ 0.77 and different non-linear graded composition profiles (x ∝ z1/n) are calculated. The effect of the initial In composition (xmin) of InxAl1-xAs buffer layer with convex-graded (n = 2) composition profile on misfit dislocation density as well as amount of residual stresses at its top part is considered. Using computational approach, it was shown that a dislocation-free region is formed under thin tensile-strained GaAs layer (1–10 nm) inserted into InAlAs metamorphic buffer layer, which agrees with experimental data obtained early by transmission electron microscopy. Novel non-linear graded composition profile of metamorphic buffer layer has been proposed, which results in twice reduction of misfit dislocation density as compared to the convex-graded one. In addition, equilibrium distributions of misfit dislocation density in the HEMT heterostructures with two-dimensional electron channel In0.75Ga0.25As/In0.75Al0.25As, which are based on InxAl1-xAs/GaAs metamorphic buffer layer of various designs, are calculated. The values of inverse steps (∆), representing the difference between the maximum In content of InxAl1-xAs (xmax) and In content of In0.75Al0.25As virtual substrate, at which relaxation of the elastic strains in 2D channel In0.75Ga0.25As/In0.75Al0.25As doesn’t occur, are calculated for metamorphic buffer layers InxAl1-xAs with convex-graded and optimized non-linear graded composition profiles.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88521955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56210.4958
С. И. Давыдов, Александр Александрович Лебедев
Within the framework of the previously proposed model (S.Yu. Davydov. Phys. Solid State 64, 2018 (2022)), in which the interaction of a macromolecule (MM) with single-layer graphene (SLG) is carried out by stitching of dangling MM bonds with carbon atoms, the effect of these stitching on the mobility of carriers in graphene was studied. It is shown that short-range scattering of MM-SLG stitching prevails over Coulomb scattering. It has also been found that the effect of induced by stitching graphene deformation on mobility can be neglected compared to short-range scattering. The cases of free and epitaxial graphene are considered. The use of the MM-SLG-substrate structure as the basis of a biosensor is discussed.
在先前提出的模型框架内(S.Yu。达维多夫。理论物理。Solid State 64, 2018(2022))，其中大分子(MM)与单层石墨烯(SLG)通过拼接悬垂的MM键与碳原子进行相互作用，研究了这些拼接对石墨烯中载流子迁移率的影响。结果表明，MM-SLG拼接的近程散射优于库仑散射。研究还发现，与近程散射相比，拼接石墨烯变形对迁移率的影响可以忽略不计。考虑了自由石墨烯和外延石墨烯的情况。讨论了利用mm - slg衬底结构作为生物传感器的基础。
{"title":"Влияние адсорбированной макромолекулы на подвижность носителей в однослойном графене: модель оборванных связей","authors":"С. И. Давыдов, Александр Александрович Лебедев","doi":"10.21883/ftp.2023.05.56210.4958","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56210.4958","url":null,"abstract":"Within the framework of the previously proposed model (S.Yu. Davydov. Phys. Solid State 64, 2018 (2022)), in which the interaction of a macromolecule (MM) with single-layer graphene (SLG) is carried out by stitching of dangling MM bonds with carbon atoms, the effect of these stitching on the mobility of carriers in graphene was studied. It is shown that short-range scattering of MM-SLG stitching prevails over Coulomb scattering. It has also been found that the effect of induced by stitching graphene deformation on mobility can be neglected compared to short-range scattering. The cases of free and epitaxial graphene are considered. The use of the MM-SLG-substrate structure as the basis of a biosensor is discussed.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90856135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56203.36k
С.В. Хазанова, В. В. Савельев
In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.
{"title":"Расчет транспортных характеристик двуслойного графена с различным углом разориентации","authors":"С.В. Хазанова, В. В. Савельев","doi":"10.21883/ftp.2023.05.56203.36k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56203.36k","url":null,"abstract":"In this work a bilayer moiré graphene structure with a spatial period of energy parameters change of the ten nanometers order is considered. The layer misorientation angle effect and the energy gap parameter on the current-voltage characteristic of the structure is studied numerically. The transmission coefficients calculation through the structure demonstrates the appearance of energy gaps, the magnitude of which depends on the misorientation angle of the layers.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76500060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55891.02k
Е.А. Артёмов, А В Мантузов, В.С. Журкин, А Д Божко, О.С. Кудрявцев, Б. В. Андрюшечкин, Владимир Михайлович Шевлюга, Н. Ю. Шицевалова, В. Б. Филипов, В. В. Глушков
We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.
{"title":"Особенности структуры поверхности и поверхностного электронного транспорта в коррелированном топологическом изоляторе SmB-=SUP=-VI-=/SUP=-","authors":"Е.А. Артёмов, А В Мантузов, В.С. Журкин, А Д Божко, О.С. Кудрявцев, Б. В. Андрюшечкин, Владимир Михайлович Шевлюга, Н. Ю. Шицевалова, В. Б. Филипов, В. В. Глушков","doi":"10.21883/ftp.2023.04.55891.02k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55891.02k","url":null,"abstract":"We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73727075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55899.20k
Рави Кумар, М П Теленков, Ю А Митягин
The energy spectra of many-particle excitons in quantum wires with a longitudinal confining potential providing a size-quantization energy comparable with the characteristic energy of the Coulomb interaction of charge carriers are calculated. It has been found that, upon excitation of one of the charge carriers, the binding energy of a multiexciton decreases by a value several times greater than the quantum confinement energy.
{"title":"Энергетическая структура мультиэкситонов в квантовых проволоках с продольным ограничивающим потенциалом","authors":"Рави Кумар, М П Теленков, Ю А Митягин","doi":"10.21883/ftp.2023.04.55899.20k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55899.20k","url":null,"abstract":"The energy spectra of many-particle excitons in quantum wires with a longitudinal confining potential providing a size-quantization energy comparable with the characteristic energy of the Coulomb interaction of charge carriers are calculated. It has been found that, upon excitation of one of the charge carriers, the binding energy of a multiexciton decreases by a value several times greater than the quantum confinement energy.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"81 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80468497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55902.5262
Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков
We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15-35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 µm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.
{"title":"Широкополосное излучение суперлюминесцентных диодов на основе многослойных структур с квантовыми яма-точками InGaAs/GaAs","authors":"Максим Владимирович Максимов, Ю.М. Шерняков, Г.О. Корнышов, О.И. Симчук, Н.Ю. Гордеев, А.А. Бекман, А.С. Паюсов, С.А. Минтаиров, Н. А. Калюжный, М.М. Кулагина, А. Е. Жуков","doi":"10.21883/ftp.2023.04.55902.5262","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55902.5262","url":null,"abstract":"We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15-35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 µm without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"96 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73717575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.03.55624.4742
А.Л. Хомец, Игорь Васильевич Сафронов, А Б Филонов, Д Б Мигас
In this work the method of non-equilibrium molecular dynamics was used to study the longitudinal phonon thermal transport at 300 K in nanoscale homogenous Ge(001) and lay- ered Si/Ge(001) thin films with p(2 × 1) surface reconstruction along different directions. The appearance of thermal transport anysotropy in the films under consideration, which is due to both the surface morphology and sharp Si/Ge interfaces, has been established. For the direction when the dimers and Si−Ge bonds at the interface lie in a plane parallel to the direction of the heat flow, the lowest thermal conductivity is observed (∼ 5−18 W/(m · K) in the range from ∼ 1 to 27 nm). It is shown that for films with thicknesses of more than 13 nm for all directions, layered films have a lower thermal conductivity compared to homogenous ones. In this case, the role of the surface morphology and interfaces is reduced to different degrees of phonon localization and compensation for more heat-conducting Si layers, respectively.
{"title":"Влияние морфологии поверхности и границ раздела на продольную фононную теплопроводность в тонкопленочных структурах Ge(001) и Si/Ge(001)","authors":"А.Л. Хомец, Игорь Васильевич Сафронов, А Б Филонов, Д Б Мигас","doi":"10.21883/ftp.2023.03.55624.4742","DOIUrl":"https://doi.org/10.21883/ftp.2023.03.55624.4742","url":null,"abstract":"In this work the method of non-equilibrium molecular dynamics was used to study the longitudinal phonon thermal transport at 300 K in nanoscale homogenous Ge(001) and lay- ered Si/Ge(001) thin films with p(2 × 1) surface reconstruction along different directions. The appearance of thermal transport anysotropy in the films under consideration, which is due to both the surface morphology and sharp Si/Ge interfaces, has been established. For the direction when the dimers and Si−Ge bonds at the interface lie in a plane parallel to the direction of the heat flow, the lowest thermal conductivity is observed (∼ 5−18 W/(m · K) in the range from ∼ 1 to 27 nm). It is shown that for films with thicknesses of more than 13 nm for all directions, layered films have a lower thermal conductivity compared to homogenous ones. In this case, the role of the surface morphology and interfaces is reduced to different degrees of phonon localization and compensation for more heat-conducting Si layers, respectively.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"101 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75811832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：