Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539831
I. Tismanar, L. Isac, A. Duţă, A. Obreja, O. Buiu
Graphene and graphene derivatives have a set of remarkable properties due to their 2D structure; to use these properties in various applications asks for increasing the thermal stability of the carbon-based components and this is why various composites are reported. The development of composites with metal oxide matrix and performant interfaces asks for using polar graphene derivatives as fillers, e,g, graphene oxide (GO). The development of thin multilayered composite films of TiO2 - GO - TiO2 using Spray Pyrolysis Deposition is discussed and the structural and surface properties are reported, considering further potential application of these composite layers as photocatalysts in advanced wastewater treatment or in self-cleaning surfaces.
石墨烯及其衍生物由于其二维结构而具有一系列显著的性能;为了在各种应用中使用这些性能，需要增加碳基组件的热稳定性，这就是为什么有各种复合材料的报道。具有金属氧化物基体和高性能界面的复合材料的发展要求使用极性石墨烯衍生物作为填料，例如氧化石墨烯(GO)。本文讨论了利用喷雾热解沉积法制备TiO2 - GO - TiO2多层复合薄膜的研究进展，报道了其结构和表面性能，并进一步探讨了复合膜作为光催化剂在深度废水处理或自清洁表面中的潜在应用。
{"title":"TiO2 - Graphene Oxide Thin Films Obtained by Spray Pyrolysis Deposition","authors":"I. Tismanar, L. Isac, A. Duţă, A. Obreja, O. Buiu","doi":"10.1109/SMICND.2018.8539831","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539831","url":null,"abstract":"Graphene and graphene derivatives have a set of remarkable properties due to their 2D structure; to use these properties in various applications asks for increasing the thermal stability of the carbon-based components and this is why various composites are reported. The development of composites with metal oxide matrix and performant interfaces asks for using polar graphene derivatives as fillers, e,g, graphene oxide (GO). The development of thin multilayered composite films of TiO2 - GO - TiO2 using Spray Pyrolysis Deposition is discussed and the structural and surface properties are reported, considering further potential application of these composite layers as photocatalysts in advanced wastewater treatment or in self-cleaning surfaces.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114954728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539781
P. Pascariu, I. V. Tudose, C. Pachiu, M. Danila, O. Ioncscu, M. Popescu, E. Koudoumas, Mirela Petruta Suchea
Novel graphene and titanium dioxide-polyvinylidene fluoride (PVDF) based nanocomposite materials (G-TiO2-PVDF) fabricated by electrospinning technique and their properties will be presented. The new composite materials show enhanced properties that make them candidates for large range of applications including triboelectronics.
{"title":"Graphene and TiO2- PVDF Nanocomposites for Potential Applications in Triboelectronics","authors":"P. Pascariu, I. V. Tudose, C. Pachiu, M. Danila, O. Ioncscu, M. Popescu, E. Koudoumas, Mirela Petruta Suchea","doi":"10.1109/SMICND.2018.8539781","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539781","url":null,"abstract":"Novel graphene and titanium dioxide-polyvinylidene fluoride (PVDF) based nanocomposite materials (G-TiO2-PVDF) fabricated by electrospinning technique and their properties will be presented. The new composite materials show enhanced properties that make them candidates for large range of applications including triboelectronics.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"37 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131496130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/smicnd.2018.8539823
Nanoscience and Nanoengineering 1
纳米科学与纳米工程
{"title":"Nanoscience and Nanoengineering 1","authors":"","doi":"10.1109/smicnd.2018.8539823","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539823","url":null,"abstract":"Nanoscience and Nanoengineering 1","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130184795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/smicnd.2018.8539844
Workshop ”Microsystems for Energy Harvesting and Environment Monitoring”
“能源收集与环境监测的微系统”工作坊
{"title":"Workshop ”Microsystems for Energy Harvesting and Environment Monitoring”","authors":"","doi":"10.1109/smicnd.2018.8539844","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539844","url":null,"abstract":"Workshop ”Microsystems for Energy Harvesting and Environment Monitoring”","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128939844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539747
F. Comanescu, A. Istrate, M. Purica
In this paper we present the results of the investigation by Raman spectroscopy of the monolayer graphene transfer on oxidized silicon substrates by highlighting the critical steps of the transfer using electrochemical delamination method. Characteristic Raman bands of graphene (D, G and 2D) are certifying if a transfer step has been performed successfully. The final step of Polymethyl methacrylate (PMMA) removal is the most critical one due to the partially folding of graphene. After transfer defects are induced in graphene which is confirmed by the increase of the ratio of the intensity of the D band to the G (ID/IG).
{"title":"Raman Investigation of Critical Steps in Monolayer Graphene Transfer Form Copper Substrate to Oxidized Silicon by Means of Electrochemical Delamination","authors":"F. Comanescu, A. Istrate, M. Purica","doi":"10.1109/SMICND.2018.8539747","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539747","url":null,"abstract":"In this paper we present the results of the investigation by Raman spectroscopy of the monolayer graphene transfer on oxidized silicon substrates by highlighting the critical steps of the transfer using electrochemical delamination method. Characteristic Raman bands of graphene (D, G and 2D) are certifying if a transfer step has been performed successfully. The final step of Polymethyl methacrylate (PMMA) removal is the most critical one due to the partially folding of graphene. After transfer defects are induced in graphene which is confirmed by the increase of the ratio of the intensity of the D band to the G (ID/IG).","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121226863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539801
D. Nešić, I. Radnović
The paper introduces the new type of a microwave permittivity sensor with an open stub realized as a double-sided parallel-strip line without substrate. It can be totally immersed into the measured material and obtains high sensitivity of the resonant frequency nearly proportional to ratio of square roots of the dielectric constants of the measured materials.
{"title":"Permittivity Characterization Using a Double-Sided Parallel-Strip Line Resonator","authors":"D. Nešić, I. Radnović","doi":"10.1109/SMICND.2018.8539801","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539801","url":null,"abstract":"The paper introduces the new type of a microwave permittivity sensor with an open stub realized as a double-sided parallel-strip line without substrate. It can be totally immersed into the measured material and obtains high sensitivity of the resonant frequency nearly proportional to ratio of square roots of the dielectric constants of the measured materials.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127378117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539754
G. Bartolucci, L. Scucchia, S. Simion
In this paper the performance of two configurations of Composite Right-/Left-Handed (CRLH) distributed oscillators is investigated. The analysis of both circuits is carried out by means of a numerical simulator. A comparison between the two oscillators is presented in terms of output power, efficiency, and total harmonic distortion.
{"title":"Efficiency and Total Harmonic Distorsion in Composite Right-/Left-Handed Distributed Oscillators","authors":"G. Bartolucci, L. Scucchia, S. Simion","doi":"10.1109/SMICND.2018.8539754","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539754","url":null,"abstract":"In this paper the performance of two configurations of Composite Right-/Left-Handed (CRLH) distributed oscillators is investigated. The analysis of both circuits is carried out by means of a numerical simulator. A comparison between the two oscillators is presented in terms of output power, efficiency, and total harmonic distortion.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125986311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/smicnd.2018.8539794
Microwave and Millimeter Wave Circuits and Systems
微波和毫米波电路和系统
{"title":"Microwave and Millimeter Wave Circuits and Systems","authors":"","doi":"10.1109/smicnd.2018.8539794","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539794","url":null,"abstract":"Microwave and Millimeter Wave Circuits and Systems","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126679731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539739
M. Gartner, C. Lete, M. Chelu, H. Stroescu, M. Zaharescu, C. Moldovan, C. Brasoveanu, M. Gheorghe, S. Gheorghe, A. Duţă, Z. Lábadi, B. Kalas, A. Saftics, M. Fried, P. Petrik, É. Tóth, H. Jankovics, F. Vonderviszt
Thin films prepared by different technologies (electrodeposition, screen printing) were electrochemically investigated as sensitive layers for nitrates/nitrites. Bacterial flagellar filaments (special protein molecules) were engineered as sensitive biolayers for heavy metal detection.
{"title":"Electrochemical Sensors for Detection of Different Ionic Species (Nitrites/Nitrates and Heavy Metals) in Natural Water Sources","authors":"M. Gartner, C. Lete, M. Chelu, H. Stroescu, M. Zaharescu, C. Moldovan, C. Brasoveanu, M. Gheorghe, S. Gheorghe, A. Duţă, Z. Lábadi, B. Kalas, A. Saftics, M. Fried, P. Petrik, É. Tóth, H. Jankovics, F. Vonderviszt","doi":"10.1109/SMICND.2018.8539739","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539739","url":null,"abstract":"Thin films prepared by different technologies (electrodeposition, screen printing) were electrochemically investigated as sensitive layers for nitrates/nitrites. Bacterial flagellar filaments (special protein molecules) were engineered as sensitive biolayers for heavy metal detection.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123639966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539804
C. Mihaela, Pachiu Cristina, Dediu Violeta
Dip-pen nanolithography combined with wet-chemical etching has been used to generate gold nanostructures with desired shapes and sizes. Self-assembled monolayers of 16-mercaptohexadecanoic acid have been patterned by DPN in different shapes: dots, lines and complex shapes, interdigits electrodes. AFM and LFM were used to measure the roughness of gold surface and to examine the thiol deposition and binding quality. These results show that DPN can be used as alternative method to generate different patterns used for complex devices, biosensor, and optoelectronic devices.
{"title":"Direct Writing Patterns for Gold Thin Film with DPN Technique","authors":"C. Mihaela, Pachiu Cristina, Dediu Violeta","doi":"10.1109/SMICND.2018.8539804","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539804","url":null,"abstract":"Dip-pen nanolithography combined with wet-chemical etching has been used to generate gold nanostructures with desired shapes and sizes. Self-assembled monolayers of 16-mercaptohexadecanoic acid have been patterned by DPN in different shapes: dots, lines and complex shapes, interdigits electrodes. AFM and LFM were used to measure the roughness of gold surface and to examine the thiol deposition and binding quality. These results show that DPN can be used as alternative method to generate different patterns used for complex devices, biosensor, and optoelectronic devices.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130814227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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