Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539743
V. Placinta, L. N. Cojocariu, C. Ravariu
In this paper we present a survey of radiation induced failures in the Input/Output blocks of an SRAM-based Field Programmable Gate Array (FPGA), using a ring oscillator-based measurement technique. This study has been done on Xilinx's KINTEX-7 FPGA, while exposed to ion and X-rays beams. Two types of failures have been identified, amplitude and duty cycle failures, and the cross-section values were estimated to be approximately 0.6 · 10−5cm2/device for the amplitude failures and 1.6 · 10−5cm2/device for the other ones.
{"title":"I/O Blocks Reliability for an SRAM-Based FPGA When Exposed to Ionizing Radiation","authors":"V. Placinta, L. N. Cojocariu, C. Ravariu","doi":"10.1109/SMICND.2018.8539743","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539743","url":null,"abstract":"In this paper we present a survey of radiation induced failures in the Input/Output blocks of an SRAM-based Field Programmable Gate Array (FPGA), using a ring oscillator-based measurement technique. This study has been done on Xilinx's KINTEX-7 FPGA, while exposed to ion and X-rays beams. Two types of failures have been identified, amplitude and duty cycle failures, and the cross-section values were estimated to be approximately 0.6 · 10<sup>−5</sup>cm<sup>2</sup>/device for the amplitude failures and 1.6 · 10<sup>−5</sup>cm<sup>2</sup>/device for the other ones.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"184 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128606766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539799
Michael Schiebold, J. Mehner
A hierarchical multi-scale approach is used to model a composite consisting of carbon nanotubes and a polymer which can be used as pressure sensor matrix to prevent people from decubitus ulcer. Starting with the modeling of a carbon nanotube and the calculation of its equivalent cylinder properties. Subsequently the cylinders which replace the CNTs are randomly distributed in the polymer such that homogenization techniques leading to the mechanical properties of the composite.
{"title":"Multi-Scale Finite Element Modeling of CNT-Polymer-Composites","authors":"Michael Schiebold, J. Mehner","doi":"10.1109/SMICND.2018.8539799","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539799","url":null,"abstract":"A hierarchical multi-scale approach is used to model a composite consisting of carbon nanotubes and a polymer which can be used as pressure sensor matrix to prevent people from decubitus ulcer. Starting with the modeling of a carbon nanotube and the calculation of its equivalent cylinder properties. Subsequently the cylinders which replace the CNTs are randomly distributed in the polymer such that homogenization techniques leading to the mechanical properties of the composite.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129547744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539760
C. Ravariu, Dan Eduard Mihalcscu, D. Istrati, M. Stanca
As first aim, a start Pentacene-Organic Thin Film Transistor - OTFT - is simulated to capture the static characteristics and to find the matching parameters with the experimental set-up. The current vectors validate the main conduction way and the OTFT functionality. In a second stage, the basic technology of an alternative polymer grafted on nanomaterial synthesis, is depicted. The Fe304 core-shell nanoparticles are assembled by an external shell of paraaminobenzoic acid (PABA). The final scope will be OTFT construction by these green technologies. The first step: the Fe3O4/PAbathin films synthesis and characterization, is successfully performed.
{"title":"From Pentacene Thin Film Transistor to Nanostructured Materials Synthesis for Green Organic-TFT","authors":"C. Ravariu, Dan Eduard Mihalcscu, D. Istrati, M. Stanca","doi":"10.1109/SMICND.2018.8539760","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539760","url":null,"abstract":"As first aim, a start Pentacene-Organic Thin Film Transistor - OTFT - is simulated to capture the static characteristics and to find the matching parameters with the experimental set-up. The current vectors validate the main conduction way and the OTFT functionality. In a second stage, the basic technology of an alternative polymer grafted on nanomaterial synthesis, is depicted. The Fe304 core-shell nanoparticles are assembled by an external shell of paraaminobenzoic acid (PABA). The final scope will be OTFT construction by these green technologies. The first step: the Fe3O4/PAbathin films synthesis and characterization, is successfully performed.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134316474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539822
C. Pleşa, M. Neag, C. Boianceanu
This paper presents an over-temperature protection (OTP) circuit for a DC-DC converter based on switching capacitors (SC DC-DC). The circuit was designed by using a two-step approach that encompasses running both electrical and electro-thermal simulations. The die temperature distribution was analyzed for two critical operational scenarios in order to identify the worst case and to provide design data for implementing a robust and precise OTP. Finally, a design example of a SC DC-DC with OTP is presented in some detail, complete with the key electrical and electro-thermal simulation results.
{"title":"Over-Temperature Protection for a Switched-Capacitor DC-DC Converter with Controlled Charging Current","authors":"C. Pleşa, M. Neag, C. Boianceanu","doi":"10.1109/SMICND.2018.8539822","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539822","url":null,"abstract":"This paper presents an over-temperature protection (OTP) circuit for a DC-DC converter based on switching capacitors (SC DC-DC). The circuit was designed by using a two-step approach that encompasses running both electrical and electro-thermal simulations. The die temperature distribution was analyzed for two critical operational scenarios in order to identify the worst case and to provide design data for implementing a robust and precise OTP. Finally, a design example of a SC DC-DC with OTP is presented in some detail, complete with the key electrical and electro-thermal simulation results.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128977347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539827
D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc
The need to develop high performance materials is increasing nowadays. Due to its extraordinary range of properties, the yttria-doped zirconia is placed in a special place among the ceramic oxide systems. Co-doping with other rare earths oxides, such as Lantania is required in order to obtain better properties for some applications. The aim of the following paper is to determine the kinetic growth parameters of the crystallite according to the nature and the content of dopant used. The ZrO2 - 3Y203 - nLa203 (n = 3, 6, 9) samples were obtained through a hydrothermal process.
{"title":"Kinetics of Lanthanum and Yttrium Doped Zirconia Crystallization by X-ray Powder Diffraction","authors":"D. V. Dragut, V. Badilita, R.R. Piticesccu, A. Moţoc","doi":"10.1109/SMICND.2018.8539827","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539827","url":null,"abstract":"The need to develop high performance materials is increasing nowadays. Due to its extraordinary range of properties, the yttria-doped zirconia is placed in a special place among the ceramic oxide systems. Co-doping with other rare earths oxides, such as Lantania is required in order to obtain better properties for some applications. The aim of the following paper is to determine the kinetic growth parameters of the crystallite according to the nature and the content of dopant used. The ZrO2 - 3Y203 - nLa203 (n = 3, 6, 9) samples were obtained through a hydrothermal process.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129450446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539834
M. Aldrigo, M. Dragoman, D. Masotti
In this paper, we show the electromagnetic design of a small patch antenna based on a molybdenum disulphide (MoS2) monolayer, with an area of only 22mm2, that exhibits high radiation efficiency and large tunability in microwaves at 10GHz thanks to a metal-insulator transition (MIT) induced by electrostatic gating. Furthermore, the MIT in MoS2is used to reconfigure a tunable carbon nanotube-based filter, conferring it different functionalities: low-pass, high-pass and bandpass around 2GHz, while its carbon nanotube varactors allow tuning the cutoff frequency or central frequency.
{"title":"Metal-Insulator Transition in Monolayer MoS2 for Tunable and Reconfigurable Devices","authors":"M. Aldrigo, M. Dragoman, D. Masotti","doi":"10.1109/SMICND.2018.8539834","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539834","url":null,"abstract":"In this paper, we show the electromagnetic design of a small patch antenna based on a molybdenum disulphide (MoS2) monolayer, with an area of only 22mm2, that exhibits high radiation efficiency and large tunability in microwaves at 10GHz thanks to a metal-insulator transition (MIT) induced by electrostatic gating. Furthermore, the MIT in MoS2is used to reconfigure a tunable carbon nanotube-based filter, conferring it different functionalities: low-pass, high-pass and bandpass around 2GHz, while its carbon nanotube varactors allow tuning the cutoff frequency or central frequency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129379723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539807
I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea
Samarium and Lanthanum doped nanostructured ZnO thin films were grown onto glass substrates by spray deposition method. Influences of different concentrations (0% to 1%) of Sm and La on the ZnO structural and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and by UV-VIS spectroscopy. X-ray diffraction studies revealed that the ZnO films have zincite crystalline structure and show a preferential growth orientation along (101) crystallographic orientation. Doping with Sm and La leads to changes of thin films crystallinity as well as their transparency in VIS region of electromagnetic spectrum. Increasing dopant concentration leads to slightly increased transparency.
{"title":"Comparative Study of Sm and La Doped ZnO Properties","authors":"I. V. Tudose, P. Pascariu, C. Pachiu, F. Comanescu, M. Danila, R. Gavrila, E. Koudoumas, Mirela Petruta Suchea","doi":"10.1109/SMICND.2018.8539807","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539807","url":null,"abstract":"Samarium and Lanthanum doped nanostructured ZnO thin films were grown onto glass substrates by spray deposition method. Influences of different concentrations (0% to 1%) of Sm and La on the ZnO structural and optical properties were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and by UV-VIS spectroscopy. X-ray diffraction studies revealed that the ZnO films have zincite crystalline structure and show a preferential growth orientation along (101) crystallographic orientation. Doping with Sm and La leads to changes of thin films crystallinity as well as their transparency in VIS region of electromagnetic spectrum. Increasing dopant concentration leads to slightly increased transparency.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127830038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539765
A. Cracan, G. Bonteanu
A novel circuit solution for implementing a known low-voltage current mirror topology is presented. It demonstrates a close to the rail input and output voltages (one saturation voltage at the input and two saturation voltages at the output) while being able to support an input current variation of orders of magnitude. The structure uses dynamic biasing in order to keep the transistors in the active region.
{"title":"Wide Dynamic Range Current Mirror","authors":"A. Cracan, G. Bonteanu","doi":"10.1109/SMICND.2018.8539765","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539765","url":null,"abstract":"A novel circuit solution for implementing a known low-voltage current mirror topology is presented. It demonstrates a close to the rail input and output voltages (one saturation voltage at the input and two saturation voltages at the output) while being able to support an input current variation of orders of magnitude. The structure uses dynamic biasing in order to keep the transistors in the active region.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"468 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121463618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539840
A. Dragan, Andrei Enache, A. Negut, A. Tache, G. Brezeanu
A digital push-pull output buffer is designed and implemented in a 0.18μm CMOS EEPROM process. The buffer acts as an interface between an internal low voltage and an external, higher level voltage. The circuit can operate in a wide range of power supply voltages, from 1.6V to 5.6V, at data rates of up to 20 Mbps. These performances were achieved through topology changes to a classic digital buffer.
{"title":"A High Performance Mixed-Voltage Digital Output Buffer","authors":"A. Dragan, Andrei Enache, A. Negut, A. Tache, G. Brezeanu","doi":"10.1109/SMICND.2018.8539840","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539840","url":null,"abstract":"A digital push-pull output buffer is designed and implemented in a 0.18μm CMOS EEPROM process. The buffer acts as an interface between an internal low voltage and an external, higher level voltage. The circuit can operate in a wide range of power supply voltages, from 1.6V to 5.6V, at data rates of up to 20 Mbps. These performances were achieved through topology changes to a classic digital buffer.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125390965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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