Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539773
T. Sandu, C. Tibeica, O. Nedelcu, M. Gologanu
The enhancement factor of intermolecular energy transfer in the vicinity of a plasmonic spherical nanoparticle is calculated analytically. In contrast to other treatments, the present calculations exploit the knowledge of spectral properties of the electrostatic operator for spherical geometry. Some numerical calculations and further discussions are also provided.
{"title":"Analytical Analysis of the Plasmonic Enhancement of Resonance Energy Transfer in the Vicinity of a Spherical Nanoparticle","authors":"T. Sandu, C. Tibeica, O. Nedelcu, M. Gologanu","doi":"10.1109/SMICND.2018.8539773","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539773","url":null,"abstract":"The enhancement factor of intermolecular energy transfer in the vicinity of a plasmonic spherical nanoparticle is calculated analytically. In contrast to other treatments, the present calculations exploit the knowledge of spectral properties of the electrostatic operator for spherical geometry. Some numerical calculations and further discussions are also provided.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127174738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539810
Jennifer M. Prohinig, Fabian Rasinger, H. Schulze, G. Pobegen
Deep level impurities in p+/n silicon diodes are investigated using deep-level transient spectroscopy (DLTS). Three different deep levels are observed: two electron traps located 0.23 eV and 0.50 eV below the conduction band as well as a hole trap 0.36 eV above the valence band. The impurities are identified as platinum and platinum-hydrogen related defects. From current voltage (IV) and capacitance voltage (Cv) characteristics the generation lifetime and the saturation diffusion current are obtained. A depth profile of the Pt-H complex is calculated by using the reverse IV characteristic. All the measurements are put together in order to show that mid-bandgap traps such as Pt-H complex increase the leakage current in reverse and the non-ideality factor in forward operation.
{"title":"Influence of Platinum-Hydrogen Complexes on Silicon p+/n-Diode Characteristics","authors":"Jennifer M. Prohinig, Fabian Rasinger, H. Schulze, G. Pobegen","doi":"10.1109/SMICND.2018.8539810","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539810","url":null,"abstract":"Deep level impurities in p+/n silicon diodes are investigated using deep-level transient spectroscopy (DLTS). Three different deep levels are observed: two electron traps located 0.23 eV and 0.50 eV below the conduction band as well as a hole trap 0.36 eV above the valence band. The impurities are identified as platinum and platinum-hydrogen related defects. From current voltage (IV) and capacitance voltage (Cv) characteristics the generation lifetime and the saturation diffusion current are obtained. A depth profile of the Pt-H complex is calculated by using the reverse IV characteristic. All the measurements are put together in order to show that mid-bandgap traps such as Pt-H complex increase the leakage current in reverse and the non-ideality factor in forward operation.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128631169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539813
C. Oprea, P. Panait, Reda M. Abdelaal, Mihai A. Cîrţu
We report results of a computational study of TiO2 clusters to understand their structure and optical properties as well as the binding and charge transfer from organic dyes to such clusters. We perform density functional theory calculations of several coumarin-based and oligomethine cyanine-based dyes as well as complex systems consisting of the dye bound to a TiO2 cluster. We provide the electronic structure of the dyes alone and adsorbed to the cluster, and discuss the matching with the solar spectrum. We display the energy level diagrams and the electron density of the key molecular orbitals and analyze the electron transfer from the dye to the oxide.
{"title":"DFT Calculations of Structure and Optical Properties in Wide Band-Gap Semiconductor Clusters for Dye-Sensitized Solar Cells","authors":"C. Oprea, P. Panait, Reda M. Abdelaal, Mihai A. Cîrţu","doi":"10.1109/SMICND.2018.8539813","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539813","url":null,"abstract":"We report results of a computational study of TiO2 clusters to understand their structure and optical properties as well as the binding and charge transfer from organic dyes to such clusters. We perform density functional theory calculations of several coumarin-based and oligomethine cyanine-based dyes as well as complex systems consisting of the dye bound to a TiO2 cluster. We provide the electronic structure of the dyes alone and adsorbed to the cluster, and discuss the matching with the solar spectrum. We display the energy level diagrams and the electron density of the key molecular orbitals and analyze the electron transfer from the dye to the oxide.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"513 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116700655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539738
M. Pustan, C. Bîrleanu, A. Trif, S. Garabagiu, D. Marconi, L. Barbu-Tudoran
This paper presents the fabrication and characterization of titanium oxide thin films deposited by Pulsed Laser Deposition in different experimental conditions. The scope of this work is to investigate the effect of the oxygen pressure in the deposition chamber on the material properties. Thin films characterizations include the mechanical and tribological properties such as the modulus of elasticity, hardness and the adhesion force. The mechanical and tribological properties of the materials are experimentally determined by using the atomic force microscopy technique. The effect of the oxygen pressure on the film thickness is analyzed. As the pressure in the deposition process decreases, the thickness of the thin films increases, respectively. The surfaces roughness increases as the deposition pressure decreases that leads to a decrease of adhesion forces. Hardness and modulus of elasticity increases as the deposition pressure decreases. This study shows that the mechanical and tribological properties of the investigated thin films strongly depend on the grain size and the films density, which are influenced by the deposition conditions (the oxygen pressure in the deposition chamber).
{"title":"Effect of the Deposition Conditions on Titanium Oxide Thin Films Properties","authors":"M. Pustan, C. Bîrleanu, A. Trif, S. Garabagiu, D. Marconi, L. Barbu-Tudoran","doi":"10.1109/SMICND.2018.8539738","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539738","url":null,"abstract":"This paper presents the fabrication and characterization of titanium oxide thin films deposited by Pulsed Laser Deposition in different experimental conditions. The scope of this work is to investigate the effect of the oxygen pressure in the deposition chamber on the material properties. Thin films characterizations include the mechanical and tribological properties such as the modulus of elasticity, hardness and the adhesion force. The mechanical and tribological properties of the materials are experimentally determined by using the atomic force microscopy technique. The effect of the oxygen pressure on the film thickness is analyzed. As the pressure in the deposition process decreases, the thickness of the thin films increases, respectively. The surfaces roughness increases as the deposition pressure decreases that leads to a decrease of adhesion forces. Hardness and modulus of elasticity increases as the deposition pressure decreases. This study shows that the mechanical and tribological properties of the investigated thin films strongly depend on the grain size and the films density, which are influenced by the deposition conditions (the oxygen pressure in the deposition chamber).","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"51 28","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113990517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/smicnd.2005.1558691
2018 International Semiconductor Conference
2018国际半导体大会
{"title":"2018 International Semiconductor Conference","authors":"","doi":"10.1109/smicnd.2005.1558691","DOIUrl":"https://doi.org/10.1109/smicnd.2005.1558691","url":null,"abstract":"2018 International Semiconductor Conference","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122953666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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