Pub Date : 2018-10-01DOI: 10.1109/smicnd.2018.8539815
Savinescu Viorel-Stefan, Nica Ioan-Alexandru, L. Goras
In this communication we present a temperature sensor based on the conversion of an on chip resistor variation with temperature into the period of a harmonic oscillator built with an active inductor resonator. The nonlinearity behavior of active inductor resonator is suppressed using an automatic amplitude control (AAC) loop which in turn makes the period of oscillation linear. An inaccuracy of ±0.34°C/±0.1°C after a first/second order polynomial fitting at a conversion speed of 30µs. The resolution for this time of conversion is 0.25°C. This innovative principle can be applied to any harmonic oscillator based on gyrator active inductor resonator.
{"title":"Resistor Based Temperature Sensor Using Active Inductor Oscillator","authors":"Savinescu Viorel-Stefan, Nica Ioan-Alexandru, L. Goras","doi":"10.1109/smicnd.2018.8539815","DOIUrl":"https://doi.org/10.1109/smicnd.2018.8539815","url":null,"abstract":"In this communication we present a temperature sensor based on the conversion of an on chip resistor variation with temperature into the period of a harmonic oscillator built with an active inductor resonator. The nonlinearity behavior of active inductor resonator is suppressed using an automatic amplitude control (AAC) loop which in turn makes the period of oscillation linear. An inaccuracy of ±0.34°C/±0.1°C after a first/second order polynomial fitting at a conversion speed of 30µs. The resolution for this time of conversion is 0.25°C. This innovative principle can be applied to any harmonic oscillator based on gyrator active inductor resonator.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131145630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539752
D. Djamai, E. Gkougkousis, M. Chahdi, A. Lounis, S. Oussalah
High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at very high fluences (2×1016neq/cm2), using a recent three level trap model for p-type silicon material. Precise structural definition is achieved by investigating the doping profile of the devices via the Secondary Ion Mass Spectrometry technique. The breakdown voltage, and hole density distribution are studied as a function of radiation fluences.
{"title":"Numerical Simulations of Radiation Damage Effects in Active-Edge Silicon Pixel Sensors for High-Energy Physics Experiments","authors":"D. Djamai, E. Gkougkousis, M. Chahdi, A. Lounis, S. Oussalah","doi":"10.1109/SMICND.2018.8539752","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539752","url":null,"abstract":"High-energy physics experiments at the future CERN High Luminosity LHC (Large Hadron Collider) require highly segmented pixelated sensors of increased geometrical efficiency and the ability of withstanding extremely high radiation damage. The performance of planar n-on-p sensors with active edges is simulated at very high fluences (2×1016neq/cm2), using a recent three level trap model for p-type silicon material. Precise structural definition is achieved by investigating the doping profile of the devices via the Secondary Ion Mass Spectrometry technique. The breakdown voltage, and hole density distribution are studied as a function of radiation fluences.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126139554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539824
H. Kang, F. Udrea
This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.
{"title":"High Pillar Doping Concentration for SiC Superjunction IGBTs","authors":"H. Kang, F. Udrea","doi":"10.1109/SMICND.2018.8539824","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539824","url":null,"abstract":"This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116605028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539786
N. Varachiu, B. Benamrouche, J. Noullet, A. Rumeau, D. Dragomirescu
This paper presents the set-up, test results and statistic evaluation for a lot of five ASIC prototypes of an impulse radio ultra-wideband transceiver (IR-UWB), realized in ST Microelectronics CMOS 65 nm technology. The main purpose of our undertaken is to provide an energy efficient device: having five functional prototypes we assessed the manufacturing process stability in respect with average power consumption, at different data rates.
{"title":"Application Specific Integrated Circuit (ASIC) for an Energy Efficient Impulse Radio Ultra-Wideband Transceiver. Testing and Statistic Assessment","authors":"N. Varachiu, B. Benamrouche, J. Noullet, A. Rumeau, D. Dragomirescu","doi":"10.1109/SMICND.2018.8539786","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539786","url":null,"abstract":"This paper presents the set-up, test results and statistic evaluation for a lot of five ASIC prototypes of an impulse radio ultra-wideband transceiver (IR-UWB), realized in ST Microelectronics CMOS 65 nm technology. The main purpose of our undertaken is to provide an energy efficient device: having five functional prototypes we assessed the manufacturing process stability in respect with average power consumption, at different data rates.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123653297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539839
R. Pascu, M. Danila, P. Varasteanu, M. Kusko, G. Pristavu, G. Brezeanu, F. Draghici
A metallic sandwich (Ti/Pt/Au) is deposited on n-type Si and subsequently subjected to post-metallization annealing at temperatures ranging from 500°C to 950°C, with a step of 50°C. XRD microstructural investigations evince the effect of post-metallization annealing, focusing on the formation of the silicide interface layer at each of the annealing temperatures. The electrical quality of the contacts was analyzed based on the linear transfer length method using test structures with different gaps between the pads. Accordingly, the sheet resistance, the contact resistance, the transfer length and the specific contact resistivity are determined. It is demonstrated that sheet resistance improves with more than three orders of magnitude at 900°C, compared the reference sample. The contact resistance also improves with more than one order of magnitude, reaching a minimum value of 1.68Ω at 950°C. The transfer length reaches a maximum value of 10.8 μm at 750°C, corresponding to a specific contact resistivity of 4.82.10-5Ω· cm2. Finally, an effective resistivity for the fabricated ohmic contact of 0.033 Ωcm is obtained for PMA at 950°C.
{"title":"Improved Ti/Pt/Au - n-Type Si Contacts by Post-Metallization Annealing in Nitrogen Atmosphere","authors":"R. Pascu, M. Danila, P. Varasteanu, M. Kusko, G. Pristavu, G. Brezeanu, F. Draghici","doi":"10.1109/SMICND.2018.8539839","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539839","url":null,"abstract":"A metallic sandwich (Ti/Pt/Au) is deposited on n-type Si and subsequently subjected to post-metallization annealing at temperatures ranging from 500°C to 950°C, with a step of 50°C. XRD microstructural investigations evince the effect of post-metallization annealing, focusing on the formation of the silicide interface layer at each of the annealing temperatures. The electrical quality of the contacts was analyzed based on the linear transfer length method using test structures with different gaps between the pads. Accordingly, the sheet resistance, the contact resistance, the transfer length and the specific contact resistivity are determined. It is demonstrated that sheet resistance improves with more than three orders of magnitude at 900°C, compared the reference sample. The contact resistance also improves with more than one order of magnitude, reaching a minimum value of 1.68Ω at 950°C. The transfer length reaches a maximum value of 10.8 μm at 750°C, corresponding to a specific contact resistivity of 4.82.10-5Ω· cm2. Finally, an effective resistivity for the fabricated ohmic contact of 0.033 Ωcm is obtained for PMA at 950°C.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121262098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539782
C. Cobianu, F. Năstase, N. Dumbravescu, O. Buiu, A. Albu, Bogdan Serbanl, M. Danila, C. Romanițan, O. Ionescu
In this paper, we present an experimental study of the electrical properties of the as-deposited HfO2films obtained by atomic layer deposition (ALD) method from tetrakis dimethylamino hafnium and water vapors at 200°C as a function of the silicon substrate preparation, in terms of Si-H and Si-OH terminated surfaces. High frequency C- V characteristics have proven that relatively higher effective dielectric constant, lower fixed charge at the Si-HfO2 interface and lower oxide trapped charge were obtained on MOS capacitors with HfO2 dielectric performed on Si-OH terminated Si surface with respect Si-H terminated surface, proving a more robust Si-O-Hf interface with respect to Si-Hf-O interface.
在本文中，我们对原子层沉积法(ALD)在200°C下从四甲基二甲胺铪和水蒸气中获得的沉积hfo2薄膜的电学性质进行了实验研究，以Si-H和Si-OH端部表面为例，研究了硅衬底制备的函数。高频C- V特性证明，相对于Si- h端面，在Si- oh端面进行HfO2介电的MOS电容器获得了相对较高的有效介电常数、较低的Si-HfO2界面固定电荷和较低的氧化物捕获电荷，证明了相对于Si- hf - o界面具有更强的Si- o - hf界面。
{"title":"Electrical Properties of As-Deposited ALD HfO2 Films Related to Silicon Surface State","authors":"C. Cobianu, F. Năstase, N. Dumbravescu, O. Buiu, A. Albu, Bogdan Serbanl, M. Danila, C. Romanițan, O. Ionescu","doi":"10.1109/SMICND.2018.8539782","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539782","url":null,"abstract":"In this paper, we present an experimental study of the electrical properties of the as-deposited HfO2films obtained by atomic layer deposition (ALD) method from tetrakis dimethylamino hafnium and water vapors at 200°C as a function of the silicon substrate preparation, in terms of Si-H and Si-OH terminated surfaces. High frequency C- V characteristics have proven that relatively higher effective dielectric constant, lower fixed charge at the Si-HfO2 interface and lower oxide trapped charge were obtained on MOS capacitors with HfO2 dielectric performed on Si-OH terminated Si surface with respect Si-H terminated surface, proving a more robust Si-O-Hf interface with respect to Si-Hf-O interface.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115513461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539828
M. Sarajlić, M. Frantlović, P. Poljak, K. Radulović, D. V. Radović
Test of a sensor with four resistors structure on its sensitivity as a temperature probe is described. The chip is sensitive on a temperature difference between Si substrate and air and less sensitive on the temperature of the whole chip. The sensor consists out of four resistors realized as metal meanders on a silicon chip patterned in 150 nm thick gold layer whose lateral dimensions are 0.94 mm by 0.6 mm and the length 14.1 mm. Width of meander line is 0.02 mm with clearance 0.02 mm. The resistors form Wheatstone bridge configuration. Current through resistors was kept constant on 5 mA. Offset of the bridge on no temperature difference was 1.5 mV. In the case of temperature difference on the sensor surface, sensor output is changing with linear dependence. This has a potential for the use in temperature stabilization systems.
介绍了一种四电阻结构传感器作为温度探头的灵敏度测试。该芯片对硅衬底和空气之间的温差敏感，对整个芯片的温度不太敏感。该传感器由4个电阻组成，它们是在横向尺寸为0.94 mm × 0.6 mm、长度为14.1 mm的150 nm厚金层上的硅片上实现的金属曲线形电阻。曲线宽度0.02 mm，间隙0.02 mm。电阻形成惠斯通电桥结构。通过电阻的电流恒定在5毫安。无温差时电桥的偏置为1.5 mV。在传感器表面存在温差的情况下，传感器输出呈线性相关变化。这在温度稳定系统中具有潜在的应用前景。
{"title":"Temperature Measurements with Four-Resistor Sensor Patterned on Golden Layer","authors":"M. Sarajlić, M. Frantlović, P. Poljak, K. Radulović, D. V. Radović","doi":"10.1109/SMICND.2018.8539828","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539828","url":null,"abstract":"Test of a sensor with four resistors structure on its sensitivity as a temperature probe is described. The chip is sensitive on a temperature difference between Si substrate and air and less sensitive on the temperature of the whole chip. The sensor consists out of four resistors realized as metal meanders on a silicon chip patterned in 150 nm thick gold layer whose lateral dimensions are 0.94 mm by 0.6 mm and the length 14.1 mm. Width of meander line is 0.02 mm with clearance 0.02 mm. The resistors form Wheatstone bridge configuration. Current through resistors was kept constant on 5 mA. Offset of the bridge on no temperature difference was 1.5 mV. In the case of temperature difference on the sensor surface, sensor output is changing with linear dependence. This has a potential for the use in temperature stabilization systems.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"220 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124364257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-10-01DOI: 10.1109/SMICND.2018.8539792
V. Trifa, G. Brezeanu, E. Ceuca
In this paper we will analyze two systems, one synchronous and one nonsynchronous, for drive and recover energy from a three-phase motor (a three phase motor can be used as an electric generator according to the mechanical power applied to its shaft) and we will propose a more efficient circuit to drive a three-phase motor and recover energy from the motor. The paper is a survey and represent the preliminary work in achieving the knowledge for developing a practical solution for to make the system more efficient.
{"title":"Three Phase Synchronous Boost Rectifier","authors":"V. Trifa, G. Brezeanu, E. Ceuca","doi":"10.1109/SMICND.2018.8539792","DOIUrl":"https://doi.org/10.1109/SMICND.2018.8539792","url":null,"abstract":"In this paper we will analyze two systems, one synchronous and one nonsynchronous, for drive and recover energy from a three-phase motor (a three phase motor can be used as an electric generator according to the mechanical power applied to its shaft) and we will propose a more efficient circuit to drive a three-phase motor and recover energy from the motor. The paper is a survey and represent the preliminary work in achieving the knowledge for developing a practical solution for to make the system more efficient.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126069332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：