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Construction of antifouling and renewable nanofiltration membranes through surface self-assembly for dye/salt separation 通过表面自组装构建用于染料/盐分离的防污可再生纳滤膜
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165611
Hanbin Wang, Wenshuang Zhang, Shiji Jia, Chongbin Wang, Yuanyuan Feng
Polyamide (PA)-based nanofiltration (NF) membranes often suffer from low water permeability and limited salt/dye separation efficiency due to dense selective layers. This work precisely regulated pore size by grafting azobenzene (Azo) and incorporating β-CD, which captures dyes via molecular recognition, enhancing dye/salt separation. The numerous hydrophilic hydroxyl groups present on the exterior of β-CD cavities improve membrane surface hydrophilicity, thereby optimizing the functionality of membrane surface. The contaminants adhering to membrane surface can be simply eliminated utilizing UV irradiation to disrupt the interactions between β-CD and Azo. More importantly, the membrane could then be reconstructed by re-immersing it in a fresh β-CD solution. The optimized membrane demonstrated a notable flux reaching 32.4 L/m2·h·bar, along with an impressive CR/Na2SO4 selectivity ratio of 220.
聚酰胺(PA)基纳滤(NF)膜由于其致密的选择层,往往具有低透水性和有限的盐/染料分离效率。本工作通过接枝偶氮苯(Azo)和加入β-CD来精确调节孔径,通过分子识别捕获染料,增强染料/盐分离。β-CD空腔表面大量的亲水性羟基提高了膜表面的亲水性,从而优化了膜表面的功能。利用紫外线照射破坏β-CD与偶氮之间的相互作用,可以简单地去除附着在膜表面的污染物。更重要的是,膜可以通过重新浸泡在新鲜的β-CD溶液中来重建。优化后的膜通量达到32.4 L/m2·h·bar, CR/Na2SO4的选择性比达到220。
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引用次数: 0
Highly efficient blue-LED-driven Cr(VI) reduction over bare and graphene-decorated Bi2WO6, BiVO4, and Bi2WO6/BiVO4 photocatalysts obtained by straightforward green methods 通过直接的绿色方法,在裸光和石墨烯修饰的Bi2WO6、BiVO4和Bi2WO6/BiVO4光催化剂上获得了高效的蓝led驱动的Cr(VI)还原
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165620
Óscar Eduardo Fernández-Jonguitud, Roberto Leyva-Ramos, Brenda Azharel Jiménez-López, Ignacio René Galindo-Esquivel, Antonio Aragón-Piña, Esmeralda Mendoza-Mendoza
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引用次数: 0
Molecular-level insights into the adsorption of nitrogen heterocycles on reduced graphene oxide: engineered via functional group spacing and heteroatom positioning 氮杂环在还原氧化石墨烯上的分子水平吸附:通过官能团间距和杂原子定位进行工程设计
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165609
Sagnik Kundu, Suraj Pise, Nilanjan Dey, Sayan Kanungo
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引用次数: 0
Wear resistance and magnetic mechanism of EP composite coating reinforced with coupling agent modified Fe3O4-ZrO2: simulation calculation and experiment research 偶联剂改性Fe3O4-ZrO2增强EP复合涂层的耐磨性及磁性机理:模拟计算与实验研究
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165624
Ting Dai, Ping Chen, Gaoyu Wang, Ning Wang
{"title":"Wear resistance and magnetic mechanism of EP composite coating reinforced with coupling agent modified Fe3O4-ZrO2: simulation calculation and experiment research","authors":"Ting Dai, Ping Chen, Gaoyu Wang, Ning Wang","doi":"10.1016/j.apsusc.2025.165624","DOIUrl":"https://doi.org/10.1016/j.apsusc.2025.165624","url":null,"abstract":"","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"18 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145784648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-rate deposition of dense and uniform SiGe thick films via nanocluster-assembled mesoplasma spray chemical vapor deposition 利用纳米团簇组装介体喷射化学气相沉积技术高速沉积致密均匀的SiGe厚膜
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165603
Wen-Bo Wang, Kang Li, Ken Chen, Wenfang Li, Jun Du, Ryoshi Ohta, Makoto Kambara
{"title":"High-rate deposition of dense and uniform SiGe thick films via nanocluster-assembled mesoplasma spray chemical vapor deposition","authors":"Wen-Bo Wang, Kang Li, Ken Chen, Wenfang Li, Jun Du, Ryoshi Ohta, Makoto Kambara","doi":"10.1016/j.apsusc.2025.165603","DOIUrl":"https://doi.org/10.1016/j.apsusc.2025.165603","url":null,"abstract":"","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"34 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2025-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145784653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ligand-controlled self-organization of 1D ZnSe nanocrystals in a model bulk heterojunction solar cell system 模型体异质结太阳能电池系统中1D ZnSe纳米晶体的配体控制自组织
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165613
Svitlana Sovinska, Paweł Dąbczyński, Mateusz M. Marzec, Jakub Rysz, Krystian Sokołowski, Andrzej Bernasik, Beata Szreniawa, Michael Bredol, Benjamin González-Diaz, Katarzyna Matras-Postolek
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引用次数: 0
Physicochemical reduction of CoO to metallic Co by non-destructive, low-energy hydrogen-ion irradiation 用非破坏性、低能氢离子辐照将CoO物化还原为金属Co
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165610
Jaegyu Jeong, Bogeun Jang, Yeonhee Lee, Yunjung Jang, Jongill Hong
Low-energy hydrogen-ion irradiation provides a non-destructive, precise route to tailor materials by modifying bulk and interfacial structures, enabling the conversion of paramagnetic oxides to ferromagnetic metals with minimal damage. We apply this approach to CoO/Pd multilayers, achieving reduction to Co/Pd while elucidating the mechanism. Deuterium is employed to isolate hydrogen-specific effects. The saturation magnetization increases with acceleration energy, indicating a progressive CoO → Co transformation driven by oxygen-vacancy-mediated out-diffusion. Depth-resolved chemical profiling, compared with simulations of defect production, reveals an energy-dependent crossover: at lower energies, dissociation of OH species supplies oxygen that diffuses out; at higher energies, direct oxygen removal dominates. X-ray reflectivity shows that smoother, more uniform interfaces promote oxygen out-diffusion and thereby accelerate reduction. Together, these results establish sub-keV hydrogen-ion irradiation as a controllable, non-destructive tool for nanoscale physicochemical phase control and for coupled tuning of bulk and interface states. Beyond the CoO/Pd system, the ability to program magnetic properties within a single heterostructure by energy modulation highlights opportunities for spintronic thin films and device-relevant surface engineering.
低能量氢离子辐照提供了一种非破坏性的、精确的途径,通过修改体和界面结构来定制材料,使顺磁性氧化物以最小的损伤转化为铁磁性金属。我们将这种方法应用于CoO/Pd多层膜,在阐明机理的同时实现了Co/Pd的还原。氘被用来分离氢的特异性效应。饱和磁化强度随着加速能量的增加而增加,表明在氧空位介导的向外扩散的驱动下,Co逐渐发生了CoO → 相变。深度分辨化学分析,与缺陷产生的模拟相比,揭示了能量依赖的交叉:在较低的能量下,OH的解离提供了扩散出来的氧气;在更高的能量下,直接除氧占主导地位。x射线反射率表明,更光滑、更均匀的界面促进氧向外扩散,从而加速还原。总之,这些结果表明,亚kev氢离子辐照是一种可控的、非破坏性的纳米级物理化学相控制和体态和界面态耦合调谐工具。除了CoO/Pd系统之外,通过能量调制在单一异质结构内编程磁性的能力为自旋电子薄膜和与器件相关的表面工程提供了机会。
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引用次数: 0
High-temperature high-growth-rate atomic layer deposition of SiO2 using hexamethyldisilylamino-dimethylamino-silane 用六甲基二苯基-二甲氨基-硅烷制备SiO2的高温高生长速率原子层沉积
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-18 DOI: 10.1016/j.apsusc.2025.165606
Changgyu Kim, Okhyeon Kim, Tanzia Chowdhury, Mi-Soo Kim, Hye-Lee Kim, Seunggyun Hong, Byung-Kwan Kim, Jin Sik Kim, Wonyong Koh, Won-Jun Lee
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引用次数: 0
Interface-defect synergy in PCN/WS2-Vs heterostructures for enhanced photoelectrochemical hydrogen evolution PCN/WS2-Vs异质结构界面缺陷协同作用促进光电化学析氢
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-17 DOI: 10.1016/j.apsusc.2025.165617
Jiangfan Liao, Guoqiang Lv, Xianghua Zhao, Tao Zhou, Renjie Li, Qingrun Xie, Xiufeng Li, Mingli Xu, Yongsheng Ren, Wenhui Ma
{"title":"Interface-defect synergy in PCN/WS2-Vs heterostructures for enhanced photoelectrochemical hydrogen evolution","authors":"Jiangfan Liao, Guoqiang Lv, Xianghua Zhao, Tao Zhou, Renjie Li, Qingrun Xie, Xiufeng Li, Mingli Xu, Yongsheng Ren, Wenhui Ma","doi":"10.1016/j.apsusc.2025.165617","DOIUrl":"https://doi.org/10.1016/j.apsusc.2025.165617","url":null,"abstract":"","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"28 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145786023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Etcing of InAs(1 0 0) surface with HBr-based solutions 用hbr溶液蚀刻InAs(1 0 0)表面
IF 6.7 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Pub Date : 2025-12-17 DOI: 10.1016/j.apsusc.2025.165622
Mikhail V. Lebedev, Antonina A. Pivovarova, Ekaterina V. Kunitsyna, Aleksandr A. Klimov, Natalia D. Il’inskaya, Aleksandra V. Koroleva, Evgeny V. Zhizhin, Sergey V. Lebedev
Etching of InAs(1 0 0) surfaces with HBr:H2O2 and HBr:KMnO4 solutions is investigated by x-ray photoelectron spectroscopy and photoluminescence in order to relate surface chemistry and electronic structure. Etching with these solutions causes essential reduction of indium oxides and accumulation of elemental arsenic. Such a chemical modification is accompanied by increase in photoluminescence intensity testifying that the etching with HBr:H2O2 or HBr:KMnO4 solution eliminates non-radiative recombination at the InAs(1 0 0)/oxide interface. The photoluminescence intensity increases with the increase in the content of elemental arsenic and residual indium oxides at the surface. The increased photoluminescence intensity retains for at least a month of the exposure of etched InAs(1 0 0) surfaces to air, though the oxidation of surface indium and arsenic atoms on the etched surfaces is not avoided.
利用x射线光电子能谱和光致发光技术研究了HBr:H2O2和HBr:KMnO4溶液对InAs(1 0 0)表面的腐蚀,以建立表面化学和电子结构之间的关系。用这些溶液蚀刻会导致氧化铟的基本还原和元素砷的积累。这种化学修饰伴随着光致发光强度的增加,证明了HBr:H2O2或HBr:KMnO4溶液的蚀刻消除了InAs(1 0 0)/氧化物界面处的非辐射重组。光致发光强度随表面砷元素含量和铟氧化物残留量的增加而增加。增加的光致发光强度在蚀刻的InAs(1 0 0)表面暴露于空气中至少保持一个月,尽管不能避免蚀刻表面上的表面铟和砷原子的氧化。
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引用次数: 0
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Applied Surface Science
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