Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210898
H. Siweris, H. Tischer
A balanced HEMT mixer for 76-77 GHz car radar applications has been designed and fabricated on a 6 inch GaAs production line. The monolithic circuit has a very small chip size of only 0.56 mm/sup 2/. With 2 dBm of LO power, a conversion loss below 11 dB was measured in the 76-77 GHz band. The results demonstrate that the single-device concept used in the circuit design is suitable for very compact monolithic millimeter-wave mixers.
{"title":"Monolithic coplanar 77 GHz balanced HEMT mixer with very small chip size","authors":"H. Siweris, H. Tischer","doi":"10.1109/MWSYM.2003.1210898","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210898","url":null,"abstract":"A balanced HEMT mixer for 76-77 GHz car radar applications has been designed and fabricated on a 6 inch GaAs production line. The monolithic circuit has a very small chip size of only 0.56 mm/sup 2/. With 2 dBm of LO power, a conversion loss below 11 dB was measured in the 76-77 GHz band. The results demonstrate that the single-device concept used in the circuit design is suitable for very compact monolithic millimeter-wave mixers.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"5 Suppl 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130414742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212632
P. Grant, H. Liu, R. Dudek
We report on the experimental investigation of combining MM wave mixing with optical heterodyne detection in a quantum well infrared photo detector. The effects of two different non-linear conductances were observed and attributed to the dark conductance and the photo conductance. The bias dependence was found to be similar for each of the conductances.
{"title":"MM wave mixing in a quantum well IR photo detector","authors":"P. Grant, H. Liu, R. Dudek","doi":"10.1109/MWSYM.2003.1212632","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212632","url":null,"abstract":"We report on the experimental investigation of combining MM wave mixing with optical heterodyne detection in a quantum well infrared photo detector. The effects of two different non-linear conductances were observed and attributed to the dark conductance and the photo conductance. The bias dependence was found to be similar for each of the conductances.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125387318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212583
M. Repossi, P. Arcioni, M. Bozzi, M. Bressan, L. Perregrini
In this paper, we present a novel approach for the numerical determination of entire-domain basis functions for the analysis of shielded microstrip circuits, composed of arbitrarily shaped metallic patches with an arbitrary number of ports. This approach is based on the solution of Helmholtz and Laplace equations in the metallic areas with proper boundary condition by the Boundary Integral-Resonant Mode Expansion (BI-RME) method. Two examples validate the proposed method.
{"title":"Determination by the BI-RME method of entire-domain basis functions for the analysis of microstrip circuits","authors":"M. Repossi, P. Arcioni, M. Bozzi, M. Bressan, L. Perregrini","doi":"10.1109/MWSYM.2003.1212583","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212583","url":null,"abstract":"In this paper, we present a novel approach for the numerical determination of entire-domain basis functions for the analysis of shielded microstrip circuits, composed of arbitrarily shaped metallic patches with an arbitrary number of ports. This approach is based on the solution of Helmholtz and Laplace equations in the metallic areas with proper boundary condition by the Boundary Integral-Resonant Mode Expansion (BI-RME) method. Two examples validate the proposed method.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126724376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1211012
Sang Jin Park, Tae Yong Kim, Sung Min Kang, K. Koo
We have developed a 24 GHz side-looking vehicle detection radar. A novel signal processing algorithm is developed for speed measurement and size classification of vehicles in multiple lanes. The system has a fixed antenna and FMCW processing module. This paper presents the background theory of operation and shows some measured data using the algorithm.
{"title":"A novel signal processing technique for vehicle detection radar","authors":"Sang Jin Park, Tae Yong Kim, Sung Min Kang, K. Koo","doi":"10.1109/MWSYM.2003.1211012","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1211012","url":null,"abstract":"We have developed a 24 GHz side-looking vehicle detection radar. A novel signal processing algorithm is developed for speed measurement and size classification of vehicles in multiple lanes. The system has a fixed antenna and FMCW processing module. This paper presents the background theory of operation and shows some measured data using the algorithm.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126751644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210593
Shih-Chieh Yen, T. Chu
The push-push oscillator is commonly used for implementing a second-harmonic oscillator. By combining two out-of-phase oscillators, their fundamental frequency components are canceled and the second-harmonic components are enhanced. This structure can be extended to triple-push, quadruple-push and hence N-push harmonic oscillators. From the oscillator injection-locking phenomenon, the relative phase between coupled oscillators can be controlled by the oscillator free-running frequency. As the output phase-shifted version signals are properly shaped and combined, the desired harmonic components are constructively added and lower-order harmonic components are canceled. This structure can be viewed as the general case of push-push oscillators. Since the output power is combined in a passive circuit, it does not suffer from the power limit of the output device in the cascade structure. The desired harmonic component can be selected by tuning the relative phase of the coupled oscillators and the conductive angle of the voltage-clamping circuit. Second-harmonic, third-harmonic and fourth-harmonic oscillators are designed and verified experimentally.
{"title":"An Nth-harmonic oscillator using an N-push coupled oscillator array with voltage-clamping circuits","authors":"Shih-Chieh Yen, T. Chu","doi":"10.1109/MWSYM.2003.1210593","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210593","url":null,"abstract":"The push-push oscillator is commonly used for implementing a second-harmonic oscillator. By combining two out-of-phase oscillators, their fundamental frequency components are canceled and the second-harmonic components are enhanced. This structure can be extended to triple-push, quadruple-push and hence N-push harmonic oscillators. From the oscillator injection-locking phenomenon, the relative phase between coupled oscillators can be controlled by the oscillator free-running frequency. As the output phase-shifted version signals are properly shaped and combined, the desired harmonic components are constructively added and lower-order harmonic components are canceled. This structure can be viewed as the general case of push-push oscillators. Since the output power is combined in a passive circuit, it does not suffer from the power limit of the output device in the cascade structure. The desired harmonic component can be selected by tuning the relative phase of the coupled oscillators and the conductive angle of the voltage-clamping circuit. Second-harmonic, third-harmonic and fourth-harmonic oscillators are designed and verified experimentally.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126422261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210572
L. Verducci, P. Placidi, P. Ciampolini, A. Scorzoni, L. Roselli
Several inherent characteristics make the Finite-Difference Time Domain (FDTD) algorithm almost ideal for the analysis of a wide class of microwave and high-frequency circuits as testified by the great number of papers that appeared in the last two decades and by the presence of many software packages on the present market. The application of the FDTD method to practical, three-dimensional problems, however, is often limited by the demand of very large computational resources. In this paper, the architecture of a digital system, dedicated to the solution of the 3D FDTD algorithm and based on a custom VLSI chip, which implements the "field-update" engine, is described. The system is conceived as a PCB module communicating with a host personal computer via a PCI bus and accommodating dedicated synchronous DRAM banks as well. Expectations are that significant speed-up, with respect to state-of-the-art software implementations of the FDTD algorithm, can be achieved.
{"title":"A standard cell hardware implementation for finite-difference time domain (FDTD) calculation","authors":"L. Verducci, P. Placidi, P. Ciampolini, A. Scorzoni, L. Roselli","doi":"10.1109/MWSYM.2003.1210572","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210572","url":null,"abstract":"Several inherent characteristics make the Finite-Difference Time Domain (FDTD) algorithm almost ideal for the analysis of a wide class of microwave and high-frequency circuits as testified by the great number of papers that appeared in the last two decades and by the presence of many software packages on the present market. The application of the FDTD method to practical, three-dimensional problems, however, is often limited by the demand of very large computational resources. In this paper, the architecture of a digital system, dedicated to the solution of the 3D FDTD algorithm and based on a custom VLSI chip, which implements the \"field-update\" engine, is described. The system is conceived as a PCB module communicating with a host personal computer via a PCI bus and accommodating dedicated synchronous DRAM banks as well. Expectations are that significant speed-up, with respect to state-of-the-art software implementations of the FDTD algorithm, can be achieved.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126079961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212601
G. Sajin, R. Marcelli, F. Craciunoiu, A. Cismaru
Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.
{"title":"MSW resonators on micromachined silicon membrane","authors":"G. Sajin, R. Marcelli, F. Craciunoiu, A. Cismaru","doi":"10.1109/MWSYM.2003.1212601","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212601","url":null,"abstract":"Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114221849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210971
W. Wang, C.K. Lin, C.C. Wu, Y. Chan
We propose a complete self-defined empirical large-signal and noise including model for enhancement-mode AlGaAs/InGaAs pHEMTs. This model achieves excellent fitting of the DC transconductance, g/sub m/, which considers the difference of the drain-to-source conductance between DC and RF measurements. In addition, for a full prediction at various biases, all parameters of the model are characterized against the gate-to-source and drain-to-source voltages. In consequence, the predictions of the power and IM3 are very accurate. Additionally, it can also predict the NF/sub min/ and /spl Gamma//sub opt/ points well using the noise parameters by calculating the thermal noise of the equivalent circuit model. This noise figure prediction including model is not always available from the commonly used conventional pHEMT models.
{"title":"A complete self-defined empirical model for enhancement-mode AlGaAs/InGaAs pHEMTs","authors":"W. Wang, C.K. Lin, C.C. Wu, Y. Chan","doi":"10.1109/MWSYM.2003.1210971","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210971","url":null,"abstract":"We propose a complete self-defined empirical large-signal and noise including model for enhancement-mode AlGaAs/InGaAs pHEMTs. This model achieves excellent fitting of the DC transconductance, g/sub m/, which considers the difference of the drain-to-source conductance between DC and RF measurements. In addition, for a full prediction at various biases, all parameters of the model are characterized against the gate-to-source and drain-to-source voltages. In consequence, the predictions of the power and IM3 are very accurate. Additionally, it can also predict the NF/sub min/ and /spl Gamma//sub opt/ points well using the noise parameters by calculating the thermal noise of the equivalent circuit model. This noise figure prediction including model is not always available from the commonly used conventional pHEMT models.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":" 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120933929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210959
Z. Gu, C. Rappaport, P. Wang, Weiwu Zhu
This paper presents a circumferential tissue ablation device used to form a circumferential conduction block in a pulmonary vein. The circumferential ablation element includes an expandable balloon that is adapted to conform to the pulmonary vein (PV) in the region of its ostium; a microwave transducer is provided and conformed to the balloon's skin, which can form the circumferential ablation by transmitting microwave energy. The microwave transducer includes a mechanism of impedance tuning by which the microwave ablation catheter system can match the impedance of its power supply with the transmission line to minimize reflected power and optimize energy delivery to targeted tissues.
{"title":"A conformal microwave antenna applicator for circumferential ablation","authors":"Z. Gu, C. Rappaport, P. Wang, Weiwu Zhu","doi":"10.1109/MWSYM.2003.1210959","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210959","url":null,"abstract":"This paper presents a circumferential tissue ablation device used to form a circumferential conduction block in a pulmonary vein. The circumferential ablation element includes an expandable balloon that is adapted to conform to the pulmonary vein (PV) in the region of its ostium; a microwave transducer is provided and conformed to the balloon's skin, which can form the circumferential ablation by transmitting microwave energy. The microwave transducer includes a mechanism of impedance tuning by which the microwave ablation catheter system can match the impedance of its power supply with the transmission line to minimize reflected power and optimize energy delivery to targeted tissues.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115321533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210890
M. Devincentis, T. Itoh
A 40 GHz communication link was demonstrated using a combination of super-heterodyne mixing and self-heterodyne direct down conversion. The broadcast carrier and modulated signals inherent in self-heterodyne transmission were first mixed down from 40 GHz to an IF of 1.5 GHz using a 10.375 GHz LO and a novel, low LO power 4/sup th/ harmonic diode mixer. These IF signals passed through an amplifier chain with a total gain of G=75 dB and noise figure of NF=1.21 dB prior to direct down conversion with a self-mixer. It was shown analytically and experimentally that the phase noise cancellation inherent in self-heterodyne detection is preserved independent of the phase noise of the additional LO signal. The input and output IF signals had the same phase noise up to 100 kHz carrier offset for a transmission distance of 2 meters.
{"title":"A 40 GHz communication link with IF-assisted self-heterodyne direct down conversion","authors":"M. Devincentis, T. Itoh","doi":"10.1109/MWSYM.2003.1210890","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210890","url":null,"abstract":"A 40 GHz communication link was demonstrated using a combination of super-heterodyne mixing and self-heterodyne direct down conversion. The broadcast carrier and modulated signals inherent in self-heterodyne transmission were first mixed down from 40 GHz to an IF of 1.5 GHz using a 10.375 GHz LO and a novel, low LO power 4/sup th/ harmonic diode mixer. These IF signals passed through an amplifier chain with a total gain of G=75 dB and noise figure of NF=1.21 dB prior to direct down conversion with a self-mixer. It was shown analytically and experimentally that the phase noise cancellation inherent in self-heterodyne detection is preserved independent of the phase noise of the additional LO signal. The input and output IF signals had the same phase noise up to 100 kHz carrier offset for a transmission distance of 2 meters.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116637083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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