Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210536
A. Margomenos, L. Katehi
A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.
{"title":"High frequency parasitic effects for on-wafer packaging of RF MEMS switches","authors":"A. Margomenos, L. Katehi","doi":"10.1109/MWSYM.2003.1210536","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210536","url":null,"abstract":"A silicon micromachined on-wafer DC to 40 GHz packaging scheme for RF MEMS switches is presented. The designed on-wafer package has an insertion loss which is less than 0.3 dB up to 40 GHz (including a 2.7 mm long through line) and a return loss below -18 dB up to 40 GHz. The inclusion of the bonding ring and the dc bias lines creates parasitic resonances. This paper presents a detailed study of the package parasitics and provides solutions that can effectively eliminate them for frequencies up to 40 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125733845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210515
M. Piasecki, J. Modelski
This article presents the results of the investigation of smart antenna modeling, simulations and operation. The experimental setup consisting of an antenna array, microwave circuits, additional control circuitry and implemented adaptive algorithm is described and characterized. The results of measurements of operational smart antenna system are presented in contrast with computer simulations of the antenna adaptation process for various signal and interference scenarios.
{"title":"Investigation of an experimental setup of a smart antenna","authors":"M. Piasecki, J. Modelski","doi":"10.1109/MWSYM.2003.1210515","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210515","url":null,"abstract":"This article presents the results of the investigation of smart antenna modeling, simulations and operation. The experimental setup consisting of an antenna array, microwave circuits, additional control circuitry and implemented adaptive algorithm is described and characterized. The results of measurements of operational smart antenna system are presented in contrast with computer simulations of the antenna adaptation process for various signal and interference scenarios.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121852284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212507
J.H. Kim, Y. Noh, C. Park
We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3V A total current of 196(194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25(5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P/sub 1/dB) of 26(25/25) dBm, and PAE of 27.8(25.4/20) % at 5.25(5.15/5.85) GHz. Measured third-order IMD(intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P/sub 1/dB for the frequency range between 5.15 and 5.85 GHz.
{"title":"A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications","authors":"J.H. Kim, Y. Noh, C. Park","doi":"10.1109/MWSYM.2003.1212507","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212507","url":null,"abstract":"We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3V A total current of 196(194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25(5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P/sub 1/dB) of 26(25/25) dBm, and PAE of 27.8(25.4/20) % at 5.25(5.15/5.85) GHz. Measured third-order IMD(intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P/sub 1/dB for the frequency range between 5.15 and 5.85 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122281657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210586
K. Remley
We use a simulator to compare adjacent-channel power ratio (ACPR) measurements of a nonlinear device excited with various multisine signals to ACPR measurements of the same device excited with pseudorandom digital modulation. We examine four common types of multisine excitation, each with identical numbers of tones, tone-spacings, and nominal power levels, but with different magnitude and phase relationships between tones. We show that use of some common multisines may result in significant overestimation of the actual ACPR from the digitally modulated nonlinear device.
{"title":"Multisine excitation for ACPR measurements","authors":"K. Remley","doi":"10.1109/MWSYM.2003.1210586","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210586","url":null,"abstract":"We use a simulator to compare adjacent-channel power ratio (ACPR) measurements of a nonlinear device excited with various multisine signals to ACPR measurements of the same device excited with pseudorandom digital modulation. We examine four common types of multisine excitation, each with identical numbers of tones, tone-spacings, and nominal power levels, but with different magnitude and phase relationships between tones. We show that use of some common multisines may result in significant overestimation of the actual ACPR from the digitally modulated nonlinear device.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127948101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210601
Lei Zhao, A. Pavio, W. Thompson
A 1 watt distributed PHEMT amplifier, that operates from 800 MHz to 2.1 GHz, with a 3.2 Volt DC supply has been developed using a novel new approach. The amplifier was designed to provide high efficiency operation, targeted for broadband wireless applications. Key to the amplifier's performance, is a novel broadband impedance matching transformer, fabricated using LTCC technology, as well as a low loss tapered drain network. The class B design has 50 /spl Omega/ terminal impedances and built-in bias decoupling.
{"title":"A 1 watt, 3.2 VDC, high efficiency distributed power PHEMT amplifier fabricated using LTCC technology","authors":"Lei Zhao, A. Pavio, W. Thompson","doi":"10.1109/MWSYM.2003.1210601","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210601","url":null,"abstract":"A 1 watt distributed PHEMT amplifier, that operates from 800 MHz to 2.1 GHz, with a 3.2 Volt DC supply has been developed using a novel new approach. The amplifier was designed to provide high efficiency operation, targeted for broadband wireless applications. Key to the amplifier's performance, is a novel broadband impedance matching transformer, fabricated using LTCC technology, as well as a low loss tapered drain network. The class B design has 50 /spl Omega/ terminal impedances and built-in bias decoupling.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115801140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210980
U. Rosenberg, S. Amari, J. Bornemann
The paper presents a new class of compact in-line pseudo-elliptic filters which are based on combining waveguide cavities and resonant irises. Two different configurations, which allow precise control of the direct couplings between the different resonator types, are introduced. Two different 3-pole filters have been designed to demonstrate the feasibility of the principle. The first filter combines a resonant iris and two TE/sub 101/ mode cavities while the second one utilizes two TM/sub 110/ mode cavities and one resonant iris. The latter has been realized and its response measured. Excellent agreement between computed and measured responses is achieved.
{"title":"Mixed-resonance compact in-line pseudo-elliptic filters","authors":"U. Rosenberg, S. Amari, J. Bornemann","doi":"10.1109/MWSYM.2003.1210980","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210980","url":null,"abstract":"The paper presents a new class of compact in-line pseudo-elliptic filters which are based on combining waveguide cavities and resonant irises. Two different configurations, which allow precise control of the direct couplings between the different resonator types, are introduced. Two different 3-pole filters have been designed to demonstrate the feasibility of the principle. The first filter combines a resonant iris and two TE/sub 101/ mode cavities while the second one utilizes two TM/sub 110/ mode cavities and one resonant iris. The latter has been realized and its response measured. Excellent agreement between computed and measured responses is achieved.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131970386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210895
D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren
We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.
{"title":"Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points","authors":"D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren","doi":"10.1109/MWSYM.2003.1210895","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210895","url":null,"abstract":"We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130265750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210459
S. Romisch, D. Popovic, N. Shino, R. Lee, Z. Popovic
This paper presents a multi-beam antenna array with amplitude-controlled continuous beam steering of each beam. The principle is demonstrated on a Ka-band full-duplex dual-polarized array with an uplink frequency of 24.7GHz and a down-link frequency of 26.7GHz. The array is designed as a discrete lens, and the antenna elements are dual-frequency patches integrated in a 5-layer structure with delay lines that enable multiple beams. The array is spatially fed with a feed corresponding to each beam. Amplitude control at the feed results in continuous beam steering. Theoretical and experimental results for the multi-beam patterns and the beam steering are presented.
{"title":"Multi-beam discrete lens arrays with amplitude-controlled steering","authors":"S. Romisch, D. Popovic, N. Shino, R. Lee, Z. Popovic","doi":"10.1109/MWSYM.2003.1210459","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210459","url":null,"abstract":"This paper presents a multi-beam antenna array with amplitude-controlled continuous beam steering of each beam. The principle is demonstrated on a Ka-band full-duplex dual-polarized array with an uplink frequency of 24.7GHz and a down-link frequency of 26.7GHz. The array is designed as a discrete lens, and the antenna elements are dual-frequency patches integrated in a 5-layer structure with delay lines that enable multiple beams. The array is spatially fed with a feed corresponding to each beam. Amplitude control at the feed results in continuous beam steering. Theoretical and experimental results for the multi-beam patterns and the beam steering are presented.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134129589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212488
A. Zhu, M. Wren, T. Brazil
Efficient and accurate behavioral modeling of RF power amplifiers with memory effects becomes of critical importance in the system-level analysis and design of wide band digital communication systems. In this paper, we present a novel Volterra-based behavioral model implemented through a bank of parallel FIR filters, the coefficients of which may be readily extracted from time-domain measurement or circuit envelope simulation. This model can reproduce the nonlinear distortion of power amplifiers with memory effects excited by wideband modulated signals with better accuracy compared to conventional quasi-memoryless models.
{"title":"An efficient Volterra-based behavioral model for wideband RF power amplifiers","authors":"A. Zhu, M. Wren, T. Brazil","doi":"10.1109/MWSYM.2003.1212488","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212488","url":null,"abstract":"Efficient and accurate behavioral modeling of RF power amplifiers with memory effects becomes of critical importance in the system-level analysis and design of wide band digital communication systems. In this paper, we present a novel Volterra-based behavioral model implemented through a bank of parallel FIR filters, the coefficients of which may be readily extracted from time-domain measurement or circuit envelope simulation. This model can reproduce the nonlinear distortion of power amplifiers with memory effects excited by wideband modulated signals with better accuracy compared to conventional quasi-memoryless models.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131523654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212534
D. Baumann, C. Fumeaux, P. Leuchtmann, R. Vahldieck
In this paper, the finite-volume time-domain (FVTD) method is refined and applied to analyze a probe-fed hemispherical dielectric resonator antenna (DRA). To improve the applicability of the FVTD method to microwave problems, a new scheme is introduced taking advantage of the method's inherent flux separation into incoming and outgoing waves. A 3D simulation is performed using an unstructured tetrahedral mesh permitting precise modeling of curved surfaces and fine structures. The obtained results are compared to those from other methods.
{"title":"Finite-volume time-domain (FVTD) method and its application to the analysis of hemispherical dielectric-resonator antennas","authors":"D. Baumann, C. Fumeaux, P. Leuchtmann, R. Vahldieck","doi":"10.1109/MWSYM.2003.1212534","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212534","url":null,"abstract":"In this paper, the finite-volume time-domain (FVTD) method is refined and applied to analyze a probe-fed hemispherical dielectric resonator antenna (DRA). To improve the applicability of the FVTD method to microwave problems, a new scheme is introduced taking advantage of the method's inherent flux separation into incoming and outgoing waves. A 3D simulation is performed using an unstructured tetrahedral mesh permitting precise modeling of curved surfaces and fine structures. The obtained results are compared to those from other methods.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131754358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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