Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212617
K. J. Cho, J. Choi, J.H. Kim, B.J. Lee, N.Y. Kim, J.C. Lee, S. Stapleton
The modulation frequency affects the asymmetric intermodulation distortion (IMD) products of a RF power amplifier. This effect reduces IMD cancellation performance of power amplifiers in connection with predistortion linearization. A phase extraction method to determine phase difference between upper and lower 3/sup rd/ order IMD products and a phase compensation circuit using an envelope injection technique is proposed. The experimental results demonstrate a significant improvement in the 3/sup rd/ order IMD cancellation performance.
{"title":"An analog compensation method for asymmetric IMD characteristics of a power amplifier","authors":"K. J. Cho, J. Choi, J.H. Kim, B.J. Lee, N.Y. Kim, J.C. Lee, S. Stapleton","doi":"10.1109/MWSYM.2003.1212617","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212617","url":null,"abstract":"The modulation frequency affects the asymmetric intermodulation distortion (IMD) products of a RF power amplifier. This effect reduces IMD cancellation performance of power amplifiers in connection with predistortion linearization. A phase extraction method to determine phase difference between upper and lower 3/sup rd/ order IMD products and a phase compensation circuit using an envelope injection technique is proposed. The experimental results demonstrate a significant improvement in the 3/sup rd/ order IMD cancellation performance.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114365768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210597
D. Eliyahu, L. Maleki
We describe a YIG tuned opto-electronic oscillator with extremely low phase noise. The oscillator can be tuned from 6 to 12 GHz in steps of 3 MHz, and exhibits a phase noise of -128 dBc/Hz at 10 KHz away from the carrier. This is nearly a 30 dB improvement over conventional YIG oscillators, and is derived from the novel approach of the opto-electronic oscillator. To our knowledge, this is the lowest noise performance of any YIG tuned oscillator previously reported.
{"title":"Tunable, ultra-low phase noise YIG based opto-electronic oscillator","authors":"D. Eliyahu, L. Maleki","doi":"10.1109/MWSYM.2003.1210597","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210597","url":null,"abstract":"We describe a YIG tuned opto-electronic oscillator with extremely low phase noise. The oscillator can be tuned from 6 to 12 GHz in steps of 3 MHz, and exhibits a phase noise of -128 dBc/Hz at 10 KHz away from the carrier. This is nearly a 30 dB improvement over conventional YIG oscillators, and is derived from the novel approach of the opto-electronic oscillator. To our knowledge, this is the lowest noise performance of any YIG tuned oscillator previously reported.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114637227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212576
F. Schmuckle, A. Jentzsch, C. Gassler, P. Marschall, D. Geiger, W. Heinrich
A hot-via flip-chip interconnect for the 40 GHz band is presented. The chip in-out cell includes on-wafer probing pads and is minimized with regard to size. An optimized design shows excellent performance with 10 GHz of bandwidth and -40 dB isolation. This demonstrates the potential of the hot-via approach in mm-wave applications.
{"title":"40 GHz hot-via flip-chip interconnects","authors":"F. Schmuckle, A. Jentzsch, C. Gassler, P. Marschall, D. Geiger, W. Heinrich","doi":"10.1109/MWSYM.2003.1212576","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212576","url":null,"abstract":"A hot-via flip-chip interconnect for the 40 GHz band is presented. The chip in-out cell includes on-wafer probing pads and is minimized with regard to size. An optimized design shows excellent performance with 10 GHz of bandwidth and -40 dB isolation. This demonstrates the potential of the hot-via approach in mm-wave applications.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117095470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212511
Jeong‐Geun Kim, Donghyun Baek, S. Jeon, Jaewoo Park, Songcheol Hong
A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.
{"title":"A 60 GHz InGaP/GaAs HBT push-push MMIC VCO","authors":"Jeong‐Geun Kim, Donghyun Baek, S. Jeon, Jaewoo Park, Songcheol Hong","doi":"10.1109/MWSYM.2003.1212511","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212511","url":null,"abstract":"A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115748036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212529
K.T. Chan, A. Chin, S. Mcalister, C. Chang, C. Tseng, V. Liang, J.K. Chen, S.C. Chien, D. S. Duh, W. Lin
Very low power loss /spl les/0.6 dB at 110 GHz and noise of <0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of /spl sim/ 4 MeV for easier process integration into current VLSI technology.
{"title":"Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process","authors":"K.T. Chan, A. Chin, S. Mcalister, C. Chang, C. Tseng, V. Liang, J.K. Chen, S.C. Chien, D. S. Duh, W. Lin","doi":"10.1109/MWSYM.2003.1212529","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212529","url":null,"abstract":"Very low power loss /spl les/0.6 dB at 110 GHz and noise of <0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with protons. In contrast, a much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of /spl sim/ 4 MeV for easier process integration into current VLSI technology.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115880232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210999
E. Zencir, N. Dogan, E. Arvas
A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.
{"title":"A low-power 435-MHz SOI CMOS LNA and mixer","authors":"E. Zencir, N. Dogan, E. Arvas","doi":"10.1109/MWSYM.2003.1210999","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210999","url":null,"abstract":"A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123104634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210492
M. Bieler, M. Spitzer, G. Hein, U. Siegner
A microwave probe has been characterized up to frequencies of 400 GHz with time-domain sampling techniques. The complex transfer function of the probe as well as the complex reflection and transmission coefficients of transmission line discontinuities have been determined from the time-domain data. This work promotes the time-domain characterization of high-frequency components with coaxial connectors. This task requires the transfer of picosecond electrical pulses between coplanar and coaxial lines, which is often accomplished with microwave probes. Therefore, the detailed propagation characteristics of the probes have to be known for reliable time-domain characterization of coaxial high-frequency devices.
{"title":"Characterization of a microwave probe up to frequencies of 400 GHz","authors":"M. Bieler, M. Spitzer, G. Hein, U. Siegner","doi":"10.1109/MWSYM.2003.1210492","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210492","url":null,"abstract":"A microwave probe has been characterized up to frequencies of 400 GHz with time-domain sampling techniques. The complex transfer function of the probe as well as the complex reflection and transmission coefficients of transmission line discontinuities have been determined from the time-domain data. This work promotes the time-domain characterization of high-frequency components with coaxial connectors. This task requires the transfer of picosecond electrical pulses between coplanar and coaxial lines, which is often accomplished with microwave probes. Therefore, the detailed propagation characteristics of the probes have to be known for reliable time-domain characterization of coaxial high-frequency devices.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123294860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210931
Eric Regards, Funk, Red Partner, Radio Mountain, Llc, E. E. Funk, V. Urick, S. Strutz, James L Dexter, Keith J. Williams
A 110 km digital microwave fiber-optic link has been designed and demonstrated with 256 QAM at 20 GHz. The design approach, involving the management of loss, dispersion, and Brillouin threshold throughout the link is discussed.
{"title":"110 km 256-QAM digital microwave over fiber link","authors":"Eric Regards, Funk, Red Partner, Radio Mountain, Llc, E. E. Funk, V. Urick, S. Strutz, James L Dexter, Keith J. Williams","doi":"10.1109/MWSYM.2003.1210931","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210931","url":null,"abstract":"A 110 km digital microwave fiber-optic link has been designed and demonstrated with 256 QAM at 20 GHz. The design approach, involving the management of loss, dispersion, and Brillouin threshold throughout the link is discussed.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124454727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210984
D. McCormick, Zhihong Li, N. Tien
Enhancement of MEMS tunable capacitors using dielectric fluids is reported. Micromachined tunable capacitors were tested and characterized in air and in mineral oil with a relative permittivity (/spl epsi//sub r/) of 2.29. In oil the capacitors exhibit a factor of 2.2 to 2.29 increase in the initial capacitance as well as the achievable tuning range. The theoretical electrical and mechanical performance enhancements have been verified for capacitors with self-resonant frequencies of 18.3GHz in air. The high frequency testing device exhibited a capacitance of 344fF at 5GHz with a Q-factor of 72 in air, and a capacitance of 799fF with a Q-factor of 40 in oil. In addition, the devices immersed in oil have increased, tunable damping and a significantly higher breakdown voltage.
{"title":"Dielectric fluid immersed MEMS tunable capacitors","authors":"D. McCormick, Zhihong Li, N. Tien","doi":"10.1109/MWSYM.2003.1210984","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210984","url":null,"abstract":"Enhancement of MEMS tunable capacitors using dielectric fluids is reported. Micromachined tunable capacitors were tested and characterized in air and in mineral oil with a relative permittivity (/spl epsi//sub r/) of 2.29. In oil the capacitors exhibit a factor of 2.2 to 2.29 increase in the initial capacitance as well as the achievable tuning range. The theoretical electrical and mechanical performance enhancements have been verified for capacitors with self-resonant frequencies of 18.3GHz in air. The high frequency testing device exhibited a capacitance of 344fF at 5GHz with a Q-factor of 72 in air, and a capacitance of 799fF with a Q-factor of 40 in oil. In addition, the devices immersed in oil have increased, tunable damping and a significantly higher breakdown voltage.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124864992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210615
A. El-Tager, J. Bray, L. Roy
This paper examines millimeter wave LTCC waveguide resonators and proposes a design strategy for obtaining high-Q factors using a number of loss-reduction and feeding techniques. The modeling and simulation methodology employed has been confirmed through a baseline LTCC resonator design, showing excellent agreement between measurements and predictions. An optimum design was then carried out which yielded an unloaded Q of over 1000 at Ka-band, the highest value ever reported for a standard LTCC process.
{"title":"High-Q LTCC resonators for millimeter wave applications","authors":"A. El-Tager, J. Bray, L. Roy","doi":"10.1109/MWSYM.2003.1210615","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210615","url":null,"abstract":"This paper examines millimeter wave LTCC waveguide resonators and proposes a design strategy for obtaining high-Q factors using a number of loss-reduction and feeding techniques. The modeling and simulation methodology employed has been confirmed through a baseline LTCC resonator design, showing excellent agreement between measurements and predictions. An optimum design was then carried out which yielded an unloaded Q of over 1000 at Ka-band, the highest value ever reported for a standard LTCC process.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122131460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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