Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210999
E. Zencir, N. Dogan, E. Arvas
A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.
{"title":"A low-power 435-MHz SOI CMOS LNA and mixer","authors":"E. Zencir, N. Dogan, E. Arvas","doi":"10.1109/MWSYM.2003.1210999","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210999","url":null,"abstract":"A low-power 435-MHz single-ended low-noise amplifier and a double-balanced mixer was implemented in a 0.35-/spl mu/m Silicon On Insulator (SOI) CMOS process. The single-ended LNA has a measured noise figure of 2.91 dB, and the mixer has an input third-order intercept point of +20 dBm. Total power dissipation of the LNA and mixer is 24 mW from a 2.5-V supply. This is the first LNA-mixer pair implemented at 435 MHz using an SOI CMOS process.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123104634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212511
Jeong‐Geun Kim, Donghyun Baek, S. Jeon, Jaewoo Park, Songcheol Hong
A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.
{"title":"A 60 GHz InGaP/GaAs HBT push-push MMIC VCO","authors":"Jeong‐Geun Kim, Donghyun Baek, S. Jeon, Jaewoo Park, Songcheol Hong","doi":"10.1109/MWSYM.2003.1212511","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212511","url":null,"abstract":"A fully integrated 60 GHz push-push voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGsP/GsAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance, common base inductive feedback topology is used. Push-push configuration is employed to achieve high oscillation frequency of V-band. The presented push-push VCO provides the oscillation frequency of 60 GHz. This is very close to the predicted oscillation frequency owing to the EM simulation of the microstrip line resonator and inductor. The peak output power is -4 dBm. The phase noise is -93 dBc/Hz at 1 MHz offset frequency of the push-push signal of 60 GHz and -102 dBc/Hz for the fundamental frequency of 30 GHz. The wide frequency tuning range is achieved about 1.6 GHz. The small chip of 0.90 /spl times/ 0.87 mm/sup 2/ is also achieved with the layout consideration.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115748036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210615
A. El-Tager, J. Bray, L. Roy
This paper examines millimeter wave LTCC waveguide resonators and proposes a design strategy for obtaining high-Q factors using a number of loss-reduction and feeding techniques. The modeling and simulation methodology employed has been confirmed through a baseline LTCC resonator design, showing excellent agreement between measurements and predictions. An optimum design was then carried out which yielded an unloaded Q of over 1000 at Ka-band, the highest value ever reported for a standard LTCC process.
{"title":"High-Q LTCC resonators for millimeter wave applications","authors":"A. El-Tager, J. Bray, L. Roy","doi":"10.1109/MWSYM.2003.1210615","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210615","url":null,"abstract":"This paper examines millimeter wave LTCC waveguide resonators and proposes a design strategy for obtaining high-Q factors using a number of loss-reduction and feeding techniques. The modeling and simulation methodology employed has been confirmed through a baseline LTCC resonator design, showing excellent agreement between measurements and predictions. An optimum design was then carried out which yielded an unloaded Q of over 1000 at Ka-band, the highest value ever reported for a standard LTCC process.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122131460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210984
D. McCormick, Zhihong Li, N. Tien
Enhancement of MEMS tunable capacitors using dielectric fluids is reported. Micromachined tunable capacitors were tested and characterized in air and in mineral oil with a relative permittivity (/spl epsi//sub r/) of 2.29. In oil the capacitors exhibit a factor of 2.2 to 2.29 increase in the initial capacitance as well as the achievable tuning range. The theoretical electrical and mechanical performance enhancements have been verified for capacitors with self-resonant frequencies of 18.3GHz in air. The high frequency testing device exhibited a capacitance of 344fF at 5GHz with a Q-factor of 72 in air, and a capacitance of 799fF with a Q-factor of 40 in oil. In addition, the devices immersed in oil have increased, tunable damping and a significantly higher breakdown voltage.
{"title":"Dielectric fluid immersed MEMS tunable capacitors","authors":"D. McCormick, Zhihong Li, N. Tien","doi":"10.1109/MWSYM.2003.1210984","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210984","url":null,"abstract":"Enhancement of MEMS tunable capacitors using dielectric fluids is reported. Micromachined tunable capacitors were tested and characterized in air and in mineral oil with a relative permittivity (/spl epsi//sub r/) of 2.29. In oil the capacitors exhibit a factor of 2.2 to 2.29 increase in the initial capacitance as well as the achievable tuning range. The theoretical electrical and mechanical performance enhancements have been verified for capacitors with self-resonant frequencies of 18.3GHz in air. The high frequency testing device exhibited a capacitance of 344fF at 5GHz with a Q-factor of 72 in air, and a capacitance of 799fF with a Q-factor of 40 in oil. In addition, the devices immersed in oil have increased, tunable damping and a significantly higher breakdown voltage.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124864992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210600
K. Tanaka, K. Mochizuki, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu
A novel structure of InGaP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs) with sub-transistor via-holes, for use in small power amplifiers, is presented. Having the via-holes directly under the C-up UBTs is convenient in terms of thermal conduction; power amplifiers composed of multi-finger HBTs in this configuration take up dramatically less area than those with devices in the conventional configuration. The result was the demonstration of thermally stable operation for a 4-finger C-up TC-HBT at up to 0.9 mW//spl mu/m/sup 2/, in spite of the low finger pitch of only 15 /spl mu/m. Moreover, a small 32-finger C-up TC-HBT, with a total area of 0.25 /spl times/ 0.31 mm, was capable of delivering a power-added efficiency of 52% at 24.4 dBm in wide-band CDMA operation. These results show the strong potential for microwave application of high-efficiency power amplifiers composed of C-up TC-HBTs.
{"title":"An InGaP/GaAs collector-up tunnelling-collector HBT and subtransistor via-hole structure for small and highly efficient power amplifiers","authors":"K. Tanaka, K. Mochizuki, C. Takubo, H. Matsumoto, T. Tanoue, I. Ohbu","doi":"10.1109/MWSYM.2003.1210600","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210600","url":null,"abstract":"A novel structure of InGaP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs) with sub-transistor via-holes, for use in small power amplifiers, is presented. Having the via-holes directly under the C-up UBTs is convenient in terms of thermal conduction; power amplifiers composed of multi-finger HBTs in this configuration take up dramatically less area than those with devices in the conventional configuration. The result was the demonstration of thermally stable operation for a 4-finger C-up TC-HBT at up to 0.9 mW//spl mu/m/sup 2/, in spite of the low finger pitch of only 15 /spl mu/m. Moreover, a small 32-finger C-up TC-HBT, with a total area of 0.25 /spl times/ 0.31 mm, was capable of delivering a power-added efficiency of 52% at 24.4 dBm in wide-band CDMA operation. These results show the strong potential for microwave application of high-efficiency power amplifiers composed of C-up TC-HBTs.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125077246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212520
J. Aguirre, C. Plett
This paper describes a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line. The distributed amplifier exhibits a measured passband of 100 MHz to 50 GHz, has a small die size (1.0 /spl times/ 1.1 mm/sup 2/) and low power consumption (125 mW). This amplifier is suitable for use in communication systems.
{"title":"A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections","authors":"J. Aguirre, C. Plett","doi":"10.1109/MWSYM.2003.1212520","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212520","url":null,"abstract":"This paper describes a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line. The distributed amplifier exhibits a measured passband of 100 MHz to 50 GHz, has a small die size (1.0 /spl times/ 1.1 mm/sup 2/) and low power consumption (125 mW). This amplifier is suitable for use in communication systems.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131786999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210379
R. Wenzel
Rules for transmission zero movement in real circuit cross-coupled filters and a classification of two primary transmission zero types are given. The rules and classifications apply to filters of arbitrary bandwidth and give insight into response skewing and "disappearing" zeros. Transmission zero sensitivity and performance limitations are described and related to circuit topology and coupling element types.
{"title":"Understanding transmission zero movement in cross-coupled filters","authors":"R. Wenzel","doi":"10.1109/MWSYM.2003.1210379","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210379","url":null,"abstract":"Rules for transmission zero movement in real circuit cross-coupled filters and a classification of two primary transmission zero types are given. The rules and classifications apply to filters of arbitrary bandwidth and give insight into response skewing and \"disappearing\" zeros. Transmission zero sensitivity and performance limitations are described and related to circuit topology and coupling element types.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134525643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212508
K. Fujita, K. Shirakawa, N. Takahashi, Y. Liu, T. Oka, M. Yamashita, K. Sakuno, H. Kawamura, M. Hasegawa, H. Koh, K. Kagoshima, H. Kijima, H. Sato
An InGaP/GaAs two-stage HBT power amplifier for 5 GHz Wireless-LAN applications was developed. By using a self-aligned base contact formation process and an external base region side etching process, a high gain HBT was realized. A small-sized via hole fabrication process was developed. The gain of multi-finger HBT was improved by locating via holes between each finger. Linearity was also improved by developing a new variable negative feedback circuit. A power amplifier MMIC utilizing this technology was fabricated, and 19.7 dBm output power, 22 dB gain, 22.5% power-added-efficiency (PAE), 5.0% error vector magnitude (EVM) were obtained at 54 Mbps transmission under a supply voltage of 3.3 V. These state of the art data represent the highest PAE reported for a the power amplifier MMIC in the 5 GHz Wireless-LAN application.
{"title":"A 5 GHz high efficiency and low distortion InGaP/GaAs HBT power amplifier MMIC","authors":"K. Fujita, K. Shirakawa, N. Takahashi, Y. Liu, T. Oka, M. Yamashita, K. Sakuno, H. Kawamura, M. Hasegawa, H. Koh, K. Kagoshima, H. Kijima, H. Sato","doi":"10.1109/MWSYM.2003.1212508","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212508","url":null,"abstract":"An InGaP/GaAs two-stage HBT power amplifier for 5 GHz Wireless-LAN applications was developed. By using a self-aligned base contact formation process and an external base region side etching process, a high gain HBT was realized. A small-sized via hole fabrication process was developed. The gain of multi-finger HBT was improved by locating via holes between each finger. Linearity was also improved by developing a new variable negative feedback circuit. A power amplifier MMIC utilizing this technology was fabricated, and 19.7 dBm output power, 22 dB gain, 22.5% power-added-efficiency (PAE), 5.0% error vector magnitude (EVM) were obtained at 54 Mbps transmission under a supply voltage of 3.3 V. These state of the art data represent the highest PAE reported for a the power amplifier MMIC in the 5 GHz Wireless-LAN application.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134348338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210589
S. Sancho, A. Suárez
A novel time-frequency analysis for phase-locked loops (PLL) is presented here, based on two nested envelope transient formulations. The outer envelope is centered, as usual, about the VCO frequency. The inner-envelope is obtained when considering a frequency domain expansion of the loop state variables about the reference frequency and its multiples, with slow-varying phasors. Thus, the influence of these frequency components on the loop behavior is taken into account. The double envelope approach enables an efficient and realistic simulation of the acquisition times in the common case of slow time response of the loop. On the other hand, the phase-noise can be analyzed from very low offsets from the carrier, while taking into account the spurious content due to the reference frequency. In the absence of noise perturbations, the application of harmonic balance to the VCO envelope enables an accurate and efficient analysis of the PLL versus any parameter of interest. The combination with continuation techniques to circumvent the possible turning points is straightforward. The stability is analyzed through the calculation of the eigenvalues of the harmonic-balance characteristic matrix. Very good agreement has been obtained in the comparison with time domain simulation and experimental results.
{"title":"Efficient analysis of phase-locked loops through a novel time-frequency approach, based on two envelope transient formulations","authors":"S. Sancho, A. Suárez","doi":"10.1109/MWSYM.2003.1210589","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210589","url":null,"abstract":"A novel time-frequency analysis for phase-locked loops (PLL) is presented here, based on two nested envelope transient formulations. The outer envelope is centered, as usual, about the VCO frequency. The inner-envelope is obtained when considering a frequency domain expansion of the loop state variables about the reference frequency and its multiples, with slow-varying phasors. Thus, the influence of these frequency components on the loop behavior is taken into account. The double envelope approach enables an efficient and realistic simulation of the acquisition times in the common case of slow time response of the loop. On the other hand, the phase-noise can be analyzed from very low offsets from the carrier, while taking into account the spurious content due to the reference frequency. In the absence of noise perturbations, the application of harmonic balance to the VCO envelope enables an accurate and efficient analysis of the PLL versus any parameter of interest. The combination with continuation techniques to circumvent the possible turning points is straightforward. The stability is analyzed through the calculation of the eigenvalues of the harmonic-balance characteristic matrix. Very good agreement has been obtained in the comparison with time domain simulation and experimental results.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"294 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132257529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210929
K. Ikeda, T. Kuri, K. Kitayama
A simultaneous modulation using a single 60 GHz-band EAM and fiber-optic transmission of 2.5 Gb/s baseband, microwave-band, and 59.6 GHz 155.52 Mb/s differential-phase-shift-keying (DPSK) signals on a single wavelength and transmission over 40 km-long dispersion-shifted fiber (DSF) are experimentally demonstrated. The optimum 3-band operation conditions are investigated. The degradation due to the non-linearity of the EAM for millimeter-wave signals is also investigated theoretically.
{"title":"Simultaneous 3-band modulation 2.5-Gb/s baseband, microwave-, and 60-GHz-band signals using a single electroabsorption modulator for radio-on-fiber systems","authors":"K. Ikeda, T. Kuri, K. Kitayama","doi":"10.1109/MWSYM.2003.1210929","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210929","url":null,"abstract":"A simultaneous modulation using a single 60 GHz-band EAM and fiber-optic transmission of 2.5 Gb/s baseband, microwave-band, and 59.6 GHz 155.52 Mb/s differential-phase-shift-keying (DPSK) signals on a single wavelength and transmission over 40 km-long dispersion-shifted fiber (DSF) are experimentally demonstrated. The optimum 3-band operation conditions are investigated. The degradation due to the non-linearity of the EAM for millimeter-wave signals is also investigated theoretically.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132316288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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