Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212455
I. Angelov, M. Fernhdal, F. Ingvarson, H. Zirath, H. Vickes
A compact large-signal model for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter power spectrum measurements and load pull measurements. Very good correspondences between measurements on 100 nm CMOS FETs (f/sub T/ = 140 GHz, f/sub max/ =100 GHz) and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.
{"title":"CMOS large signal model for CAD","authors":"I. Angelov, M. Fernhdal, F. Ingvarson, H. Zirath, H. Vickes","doi":"10.1109/MWSYM.2003.1212455","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212455","url":null,"abstract":"A compact large-signal model for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter power spectrum measurements and load pull measurements. Very good correspondences between measurements on 100 nm CMOS FETs (f/sub T/ = 140 GHz, f/sub max/ =100 GHz) and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124763267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210946
A. Katz, R. Gray
Microwave power modules (MPMs) provide the most compact and efficient source of microwave/millimeter wave amplification in the 50 to 150 W power range. They can also amplify over a multi-octave frequency band. MPMs have been around for almost ten years and applied in military radar and electronic warfare, but have seen little application in communications. This paper shows that by combining an MPM with a linearizer, high power, high efficiency and high linearity can all be achieved. This combination should make linearized MPMs highly attractive for both commercial and military communications applications.
{"title":"The linearized microwave power module","authors":"A. Katz, R. Gray","doi":"10.1109/MWSYM.2003.1210946","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210946","url":null,"abstract":"Microwave power modules (MPMs) provide the most compact and efficient source of microwave/millimeter wave amplification in the 50 to 150 W power range. They can also amplify over a multi-octave frequency band. MPMs have been around for almost ten years and applied in military radar and electronic warfare, but have seen little application in communications. This paper shows that by combining an MPM with a linearizer, high power, high efficiency and high linearity can all be achieved. This combination should make linearized MPMs highly attractive for both commercial and military communications applications.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130367551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210956
Xu Li, S. Hagness, B. V. Van Veen, Daniel W Van Der Weide
We investigate the experimental feasibility of detecting small malignant breast tumors using a recently proposed method of microwave imaging via space-time beamforming. A microwave sensor comprised of a planar synthetic array of compact ultrawideband (1-11 GHz) antennas is placed above a breast tissue phantom - a tank of homogeneous normal breast tissue simulant covered by a thin layer of skin simulant. A small (< 0.5 cm) synthetic tumor is embedded in the breast phantom. At each position in the array, the antenna transmits a synthetically generated ultra-short pulse into the breast phantom. A robust data-adaptive algorithm removes the artifact caused by the dominant backscatter from the skin-breast interface. The signals are passed through a 3-D space-time beamformer designed to image backscattered energy as a function of location. Even millimeter-sized malignant tumors have relatively large microwave scattering cross-sections due to their significant dielectric-properties contrast with normal breast tissue. Therefore they produce localized regions of large backscatter energy levels in the beamformer image. The successful detection and localization of very small synthetic tumors embedded in the skin-breast tissue phantom is demonstrated.
{"title":"Experimental investigation of microwave imaging via space-time beamforming for breast cancer detection","authors":"Xu Li, S. Hagness, B. V. Van Veen, Daniel W Van Der Weide","doi":"10.1109/MWSYM.2003.1210956","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210956","url":null,"abstract":"We investigate the experimental feasibility of detecting small malignant breast tumors using a recently proposed method of microwave imaging via space-time beamforming. A microwave sensor comprised of a planar synthetic array of compact ultrawideband (1-11 GHz) antennas is placed above a breast tissue phantom - a tank of homogeneous normal breast tissue simulant covered by a thin layer of skin simulant. A small (< 0.5 cm) synthetic tumor is embedded in the breast phantom. At each position in the array, the antenna transmits a synthetically generated ultra-short pulse into the breast phantom. A robust data-adaptive algorithm removes the artifact caused by the dominant backscatter from the skin-breast interface. The signals are passed through a 3-D space-time beamformer designed to image backscattered energy as a function of location. Even millimeter-sized malignant tumors have relatively large microwave scattering cross-sections due to their significant dielectric-properties contrast with normal breast tissue. Therefore they produce localized regions of large backscatter energy levels in the beamformer image. The successful detection and localization of very small synthetic tumors embedded in the skin-breast tissue phantom is demonstrated.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126807393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210578
Jaejune Jang, Zhiping Yu, R. Dutton
An accurate method to extract a small signal equivalent circuit model of RF silicon MOSFETs is presented. Analytical calculations are used for each intrinsic parameter and accuracy is within 1% for the entire operational region. 2D physical device simulation is used to analyze this methodology. A simple non-quasi static (NQS) model is reported, which offers good accuracy needed for circuit simulation, including a simple network representing the coupling between source and drain. Accurate extraction methods for extrinsic parameters have been also developed. The compact model and its parameter extraction are verified on Si-MOSFETs through S-parameter measurements.
{"title":"Accurate small-signal model and its parameter extraction in RF silicon MOSFETs","authors":"Jaejune Jang, Zhiping Yu, R. Dutton","doi":"10.1109/MWSYM.2003.1210578","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210578","url":null,"abstract":"An accurate method to extract a small signal equivalent circuit model of RF silicon MOSFETs is presented. Analytical calculations are used for each intrinsic parameter and accuracy is within 1% for the entire operational region. 2D physical device simulation is used to analyze this methodology. A simple non-quasi static (NQS) model is reported, which offers good accuracy needed for circuit simulation, including a simple network representing the coupling between source and drain. Accurate extraction methods for extrinsic parameters have been also developed. The compact model and its parameter extraction are verified on Si-MOSFETs through S-parameter measurements.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126918755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210571
N. Bushyager, M. Tentzeris, J. Papapolymerou
In this paper the Haar-wavelet multiresolution time-domain (MRTD) scheme is modified in a way that enables the modeling of arbitrary positioned metals within a cell, leading to the development of composite cells that are useful for the simulation of highly detailed structures. The application of this technique to one such structure, an electromagnetic band-gap (EBG) resonator, is presented. The technique demonstrates a time-domain approach in which MRTD can be used to drastically reduce the number of cells needed to simulate a complex device while taking full advantage of the technique's inherent time-and space-adaptive gridding.
{"title":"A composite-cell multiresolution time-domain technique for design of electromagnetic band-gap and via-array structures","authors":"N. Bushyager, M. Tentzeris, J. Papapolymerou","doi":"10.1109/MWSYM.2003.1210571","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210571","url":null,"abstract":"In this paper the Haar-wavelet multiresolution time-domain (MRTD) scheme is modified in a way that enables the modeling of arbitrary positioned metals within a cell, leading to the development of composite cells that are useful for the simulation of highly detailed structures. The application of this technique to one such structure, an electromagnetic band-gap (EBG) resonator, is presented. The technique demonstrates a time-domain approach in which MRTD can be used to drastically reduce the number of cells needed to simulate a complex device while taking full advantage of the technique's inherent time-and space-adaptive gridding.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123232196","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210608
J. Udomoto, T. Matsuzuka, S. Chaki, K. Kanaya, T. Katoh, Y. Notani, T. Hisaka, T. Oku, T. Ishikawa, M. Komaru, Y. Matsuda
This paper describes the successful development of 38/77 GHz transmit MMICs for automotive applications. They consist of a 38 GHz amplifier, a frequency doubler, and a 77 GHz power amplifier. These amplifiers achieve output powers of 16 dBm at 38 GHz and 15 dBm at 76.5 GHz at 1 dB gain compression point. The output power of the 77 GHz amplifier is one of the highest delivered by a single chip MMIC at 76.5 GHz. The frequency doubler delivers an output power of 5.7 dBm at 76.5 GHz. These results are promising for automotive applications in the W-band.
{"title":"A 38/77 GHz MMIC transmitter chip set for automotive applications","authors":"J. Udomoto, T. Matsuzuka, S. Chaki, K. Kanaya, T. Katoh, Y. Notani, T. Hisaka, T. Oku, T. Ishikawa, M. Komaru, Y. Matsuda","doi":"10.1109/MWSYM.2003.1210608","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210608","url":null,"abstract":"This paper describes the successful development of 38/77 GHz transmit MMICs for automotive applications. They consist of a 38 GHz amplifier, a frequency doubler, and a 77 GHz power amplifier. These amplifiers achieve output powers of 16 dBm at 38 GHz and 15 dBm at 76.5 GHz at 1 dB gain compression point. The output power of the 77 GHz amplifier is one of the highest delivered by a single chip MMIC at 76.5 GHz. The frequency doubler delivers an output power of 5.7 dBm at 76.5 GHz. These results are promising for automotive applications in the W-band.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121168881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212461
A. Kamel, A. Omar
A simple far-field phased-line model for the lateral leakage (e.g. the surface-wave one) in printed transmission lines is presented. It is based on replacing the guiding strip(s) and/or guiding slot(s) by a phased line radiating in the background structure (usually a simple dielectric-slab guide or a partially filled parallel plate waveguide). Both full-line (infinitely extended) and half-line (semi-infinite) structures are considered. The model predicts the impossibility of real (bounded) modes that are faster than the corresponding background mode (into which leakage can take place) in both full-line and half-line structures. On the other hand, complex (leaky-wave) modes are shown to behave properly (improperly) outside their sector of definition in half-line (full-line) structures. Far-field distributions for a number of cases are given for the sake of illustration.
{"title":"Simple far-field model for lateral leakage in printed transmission lines","authors":"A. Kamel, A. Omar","doi":"10.1109/MWSYM.2003.1212461","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212461","url":null,"abstract":"A simple far-field phased-line model for the lateral leakage (e.g. the surface-wave one) in printed transmission lines is presented. It is based on replacing the guiding strip(s) and/or guiding slot(s) by a phased line radiating in the background structure (usually a simple dielectric-slab guide or a partially filled parallel plate waveguide). Both full-line (infinitely extended) and half-line (semi-infinite) structures are considered. The model predicts the impossibility of real (bounded) modes that are faster than the corresponding background mode (into which leakage can take place) in both full-line and half-line structures. On the other hand, complex (leaky-wave) modes are shown to behave properly (improperly) outside their sector of definition in half-line (full-line) structures. Far-field distributions for a number of cases are given for the sake of illustration.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"22 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114118982","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210891
C. Au-Yeung, K. Cheng
This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.
{"title":"CMOS mixer linearization by the low-frequency signal injection method","authors":"C. Au-Yeung, K. Cheng","doi":"10.1109/MWSYM.2003.1210891","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210891","url":null,"abstract":"This paper presents, for the first time, the application of low-frequency signal injection technique to the linearization of a doubly balanced dual gate mixer. The down-conversion mixer is fabricated using 0.35 /spl mu/m CMOS technology and is designed to operate at 900 MHz RF input frequency with good port-to-port isolation, low LO power and current consumption. Reduction of third-order intermodulation distortion (IMD) level of almost 20 dB is achieved by the proposed scheme.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114375398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212615
Y. Wang
A new architecture for linear high efficiency power amplifiers and transmitters is proposed. The essential idea is to apply delta-sigma modulation to the signal envelopes in the Kahn transmitters. While in traditional Kahn techniques the original signal envelope is restored before the final-stage power amplifier is modulated, in the proposed scheme, the power amplifier undergoes digital modulations and the signal envelope is restored from passing through a high Q bandpass filter at the output. Simulations based on power GaAs FET models show 31% improvements on power efficiency and 5 dB improvement in IM3 compared to traditional Kahn techniques.
{"title":"An improved Kahn transmitter architecture based on delta-sigma modulation","authors":"Y. Wang","doi":"10.1109/MWSYM.2003.1212615","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212615","url":null,"abstract":"A new architecture for linear high efficiency power amplifiers and transmitters is proposed. The essential idea is to apply delta-sigma modulation to the signal envelopes in the Kahn transmitters. While in traditional Kahn techniques the original signal envelope is restored before the final-stage power amplifier is modulated, in the proposed scheme, the power amplifier undergoes digital modulations and the signal envelope is restored from passing through a high Q bandpass filter at the output. Simulations based on power GaAs FET models show 31% improvements on power efficiency and 5 dB improvement in IM3 compared to traditional Kahn techniques.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126478258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212607
Y. Tsukahara, T. Katoh, Y. Notani, T. Ishida, T. Ishikawa, M. Komaru, Y. Matsuda
High isolation millimeter-wave switches have been successfully developed using a newly developed line unified shunt pHEMT structure, which is effective to reduce parasitic inductance of its short circuit. The developed V-band SPDT switch shows an isolation of greater than 40 dB and an insertion loss of 1.8 dB at 60 GHz, and the W-band SP3T switch shows an isolation of greater than 35 dB and an insertion loss of 2.5 dB at 77 GHz. Input and output return losses are better than 12 dB in ON-state. These performances of high isolation and low insertion loss are the best among V-band and W-band pHEMT MMIC switches. The switches consume no DC power, and require no complex off-chip bias circuitry.
{"title":"Millimeter-wave MMIC switches with pHEMT cells reduced parasitic inductance","authors":"Y. Tsukahara, T. Katoh, Y. Notani, T. Ishida, T. Ishikawa, M. Komaru, Y. Matsuda","doi":"10.1109/MWSYM.2003.1212607","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212607","url":null,"abstract":"High isolation millimeter-wave switches have been successfully developed using a newly developed line unified shunt pHEMT structure, which is effective to reduce parasitic inductance of its short circuit. The developed V-band SPDT switch shows an isolation of greater than 40 dB and an insertion loss of 1.8 dB at 60 GHz, and the W-band SP3T switch shows an isolation of greater than 35 dB and an insertion loss of 2.5 dB at 77 GHz. Input and output return losses are better than 12 dB in ON-state. These performances of high isolation and low insertion loss are the best among V-band and W-band pHEMT MMIC switches. The switches consume no DC power, and require no complex off-chip bias circuitry.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128169578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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