Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688221
S. N. Nejad, A. A. Fomani, R. Mansour
In this paper, several Giant Magneto Impedance (GMI) magnetic sensors have been designed, fabricated, post processed and tested to work in low field intensities (miliTesla range). The sensors are multilayer GMI sensors having CoSiB as GMI material surrounded with two thinner gold layers. The conventional thin film microfabrication process is employed to fabricate the sensors on a glass wafer. A post-processing thermal and magnetic treatment is suggested to magnetize GMI material and enhance performance of the sensors. The suggested post-processing step will decrease fabrication cost of GMI sensors and improve their performance effectively.
{"title":"Multilayer Giant Magneto-Impedance sensor for low field sensing","authors":"S. N. Nejad, A. A. Fomani, R. Mansour","doi":"10.1109/ICSENS.2013.6688221","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688221","url":null,"abstract":"In this paper, several Giant Magneto Impedance (GMI) magnetic sensors have been designed, fabricated, post processed and tested to work in low field intensities (miliTesla range). The sensors are multilayer GMI sensors having CoSiB as GMI material surrounded with two thinner gold layers. The conventional thin film microfabrication process is employed to fabricate the sensors on a glass wafer. A post-processing thermal and magnetic treatment is suggested to magnetize GMI material and enhance performance of the sensors. The suggested post-processing step will decrease fabrication cost of GMI sensors and improve their performance effectively.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126136555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688334
Naoki Kakita, H. Miyashita, S. Kishida, Sang-Seok Lee, Jeong-o Lee
We have proposed a high performance MEMS based microstructure array of micropreconcentrator (microPC) for breath diagnosis of cancer biomarkers. Moreover, we have reported in this paper for the first time the quantitative analysis results, which are used as evaluation criteria for determination of microstructure array performance. As a microstructure shape in microPC, we propose a flower leaf type shape. Owing to our new microstructure shape, biomarkers flow can be guided into microstructures and then contact area between biomarkers flow and microstructure surface can be maximized. The design parameters, such as shape, size and configuration of microstructures are studied and determined quantitatively by using particle adsorption model.
{"title":"MEMS based microstructure array design and its quantitative analysis of micropreconcentrator for cancer biomarker diagnosis","authors":"Naoki Kakita, H. Miyashita, S. Kishida, Sang-Seok Lee, Jeong-o Lee","doi":"10.1109/ICSENS.2013.6688334","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688334","url":null,"abstract":"We have proposed a high performance MEMS based microstructure array of micropreconcentrator (microPC) for breath diagnosis of cancer biomarkers. Moreover, we have reported in this paper for the first time the quantitative analysis results, which are used as evaluation criteria for determination of microstructure array performance. As a microstructure shape in microPC, we propose a flower leaf type shape. Owing to our new microstructure shape, biomarkers flow can be guided into microstructures and then contact area between biomarkers flow and microstructure surface can be maximized. The design parameters, such as shape, size and configuration of microstructures are studied and determined quantitatively by using particle adsorption model.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123296585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688458
S. Ebschke, R. Poloczek, K. Kallis, H. Fiedler
Based on silicon on insulator (SOI) technology, a novel absolute pressure sensor with a pseudo-MOSFET read-out is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The membrane is a monocrystalline silicon top layer which contains nanoholes (120 nm × 2 μm) created by electron-beam lithography [1]. These nano-holes are used for isotropic etching of the cavity into the buried oxide (BOX). This idea based on the previous work of Lee et al. [2] and Sato et al. [3]. To encapsulate the cavity the holes are sealed by using non-stressed PECVD-nitride. The drain- and source-connections of the pseudo-MOSFET are compounded by evaporation of aluminum on top of the membrane and a backside metallization is attached for the gate connection. The experimental results show that this kind of sensor possesses good static performance, which meet the sophisticated pressure measurement demands of the medical industry.
{"title":"A monocrystalline absolute pressure sensor with a pseudo-MOSFET read-out device for life-science applications","authors":"S. Ebschke, R. Poloczek, K. Kallis, H. Fiedler","doi":"10.1109/ICSENS.2013.6688458","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688458","url":null,"abstract":"Based on silicon on insulator (SOI) technology, a novel absolute pressure sensor with a pseudo-MOSFET read-out is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is the sacrifice layer for the cavity. The membrane is a monocrystalline silicon top layer which contains nanoholes (120 nm × 2 μm) created by electron-beam lithography [1]. These nano-holes are used for isotropic etching of the cavity into the buried oxide (BOX). This idea based on the previous work of Lee et al. [2] and Sato et al. [3]. To encapsulate the cavity the holes are sealed by using non-stressed PECVD-nitride. The drain- and source-connections of the pseudo-MOSFET are compounded by evaporation of aluminum on top of the membrane and a backside metallization is attached for the gate connection. The experimental results show that this kind of sensor possesses good static performance, which meet the sophisticated pressure measurement demands of the medical industry.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125341613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688472
K. Hiroi, Yoshihito Seto, F. Matsumoto, Yuzo Taenaka, H. Ochiai, H. Ando, H. Yokoyama, Masaya Nakayama, H. Sunahara
In this study, we focus on the accurate and early prediction of Localized Heavy Rain (LHR) using multiple sensors. Traditional sensors, such as rain gauges and radar, cannot detect LHR until cumulonimbus clouds cover the sensors. In contrast, Surface Meteorological Monitoring Networks (SMMNs) can accurately measure rainfall in the vicinity of the sensors, thereby detecting LHR earlier than traditional sensors. By evenly placing the sensors around a large city, a SMMN should be useful in predicting LHR. However, since most sensors are placed in a different installation environment, their raw sensor data may significantly differ depending on their surrounding environment (i.e., altitude and sky view factor). Therefore, we propose a calibration scheme for a SMMN that utilizes many sensors in various installation environments and implement a novel LHR prediction system that produces accurate and early LHR predictions. Our system proved to accurately predict LHR 30 minutes earlier than traditional schemes.
{"title":"Accurate and early detection of Localized Heavy Rain by integrating multivendor sensors in various installation environments","authors":"K. Hiroi, Yoshihito Seto, F. Matsumoto, Yuzo Taenaka, H. Ochiai, H. Ando, H. Yokoyama, Masaya Nakayama, H. Sunahara","doi":"10.1109/ICSENS.2013.6688472","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688472","url":null,"abstract":"In this study, we focus on the accurate and early prediction of Localized Heavy Rain (LHR) using multiple sensors. Traditional sensors, such as rain gauges and radar, cannot detect LHR until cumulonimbus clouds cover the sensors. In contrast, Surface Meteorological Monitoring Networks (SMMNs) can accurately measure rainfall in the vicinity of the sensors, thereby detecting LHR earlier than traditional sensors. By evenly placing the sensors around a large city, a SMMN should be useful in predicting LHR. However, since most sensors are placed in a different installation environment, their raw sensor data may significantly differ depending on their surrounding environment (i.e., altitude and sky view factor). Therefore, we propose a calibration scheme for a SMMN that utilizes many sensors in various installation environments and implement a novel LHR prediction system that produces accurate and early LHR predictions. Our system proved to accurately predict LHR 30 minutes earlier than traditional schemes.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125520318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688432
I. Ercoli, P. Marchionni, L. Scalise, E. P. Tomasini, V. Carnielli
In this paper, a novel contactless measurement method for the assessment of the thermoregulatory abilities of preterm infants is proposed. It is based on the use of an infrared (IR) thermo-camera allowing precise, multipoint and contactless measurement of the skin temperature of the preterm patient. The method proposed has been designed to verify the ability of the preterm patients to correctly operate the process of thermoregulation on his/her body. Results show a mean difference of 0.01°C between IR camera measurements and values simultaneously measured with a standard contact thermo-resistance. No dependence from the temperature value was shown on the physiological range of temperatures (28-36°C). From the experimental data it is possible to extrapolate the empirical model of the thermoregulation mechanism of patients, allowing to individuate deviation from normal behavior for those patients with reduced abilities to self-regulate his/her body temperature.
{"title":"Non contact measurement of body temperature for the identification of thermoregulation abilities in preterm patients","authors":"I. Ercoli, P. Marchionni, L. Scalise, E. P. Tomasini, V. Carnielli","doi":"10.1109/ICSENS.2013.6688432","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688432","url":null,"abstract":"In this paper, a novel contactless measurement method for the assessment of the thermoregulatory abilities of preterm infants is proposed. It is based on the use of an infrared (IR) thermo-camera allowing precise, multipoint and contactless measurement of the skin temperature of the preterm patient. The method proposed has been designed to verify the ability of the preterm patients to correctly operate the process of thermoregulation on his/her body. Results show a mean difference of 0.01°C between IR camera measurements and values simultaneously measured with a standard contact thermo-resistance. No dependence from the temperature value was shown on the physiological range of temperatures (28-36°C). From the experimental data it is possible to extrapolate the empirical model of the thermoregulation mechanism of patients, allowing to individuate deviation from normal behavior for those patients with reduced abilities to self-regulate his/her body temperature.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125536358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688410
A. Frangi, M. Cremonesi, A. Jaakkola, T. Pensala
Piezoelectrically actuated MEMS resonators can be very effective for timing applications even though experiments show that mode coupling and dissipative phenomena can affect their performance. Experiments demonstrate the occurrence of a much larger mechanical dissipation with respect to similar devices actuated capacitively. This contribution addresses the analysis of different dissipation phenomena. Refined numerical tools have shown that anchor and thermoelastic losses alone cannot reproduce experimental data. Hence a model to account for surface dissipation has been considered introducing a viscous term at the interfaces. A set of specific length extensional devices with different dimensions, vibrating modes and piezo-patterns have been produced and tested to validate the model. The numerical predictions show a good agreement with the experimental tests for different device lengths and actuation frequencies, confirming the initial assumption.
{"title":"Interface dissipation in piezoelectric MEMS resonators: An experimental and numerical investigation","authors":"A. Frangi, M. Cremonesi, A. Jaakkola, T. Pensala","doi":"10.1109/ICSENS.2013.6688410","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688410","url":null,"abstract":"Piezoelectrically actuated MEMS resonators can be very effective for timing applications even though experiments show that mode coupling and dissipative phenomena can affect their performance. Experiments demonstrate the occurrence of a much larger mechanical dissipation with respect to similar devices actuated capacitively. This contribution addresses the analysis of different dissipation phenomena. Refined numerical tools have shown that anchor and thermoelastic losses alone cannot reproduce experimental data. Hence a model to account for surface dissipation has been considered introducing a viscous term at the interfaces. A set of specific length extensional devices with different dimensions, vibrating modes and piezo-patterns have been produced and tested to validate the model. The numerical predictions show a good agreement with the experimental tests for different device lengths and actuation frequencies, confirming the initial assumption.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114912851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688461
A. Charalambides, S. Bergbreiter
An all-elastomer microelectromechanical systems (MEMS) sensor to detect an applied normal force by measuring a change in capacitance was designed and fabricated; this is the first sensor of its kind to utilize in-plane conductive elastomer capacitors. Other works have demonstrated capacitive tactile sensors, but capacitors were oriented out-of-plane and often required more complex fabrication processes. This fabrication process uses silicon to mold and cure conductive and dielectric elastomers, which requires fewer steps and enables nonplanar electrode geometries. Experimental results for planar geometries matched a reduced order model for low strains (up to 15% strain) and a 10 μm dielectric gap resulted in a sensitivity of 85 fF/N. An “interdigitated” nonplanar electrode geometry was also fabricated and found to increase sensitivity by an order of magnitude (up to 1.1 pF/N) over basic “flat plate” electrodes.
{"title":"All-elastomer in-plane MEMS capacitive tactile sensor for normal force detection","authors":"A. Charalambides, S. Bergbreiter","doi":"10.1109/ICSENS.2013.6688461","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688461","url":null,"abstract":"An all-elastomer microelectromechanical systems (MEMS) sensor to detect an applied normal force by measuring a change in capacitance was designed and fabricated; this is the first sensor of its kind to utilize in-plane conductive elastomer capacitors. Other works have demonstrated capacitive tactile sensors, but capacitors were oriented out-of-plane and often required more complex fabrication processes. This fabrication process uses silicon to mold and cure conductive and dielectric elastomers, which requires fewer steps and enables nonplanar electrode geometries. Experimental results for planar geometries matched a reduced order model for low strains (up to 15% strain) and a 10 μm dielectric gap resulted in a sensitivity of 85 fF/N. An “interdigitated” nonplanar electrode geometry was also fabricated and found to increase sensitivity by an order of magnitude (up to 1.1 pF/N) over basic “flat plate” electrodes.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116127095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688323
M. Madec, Laurent Osberger, L. Hébrard
The Vertical Hall Device integrable in a shallow N-well, and thus compatible with Low-Voltage CMOS processes, i.e. the LV-VHD, was proposed five years ago. Its layout is similar to the layout of the HV-VHD, i.e. the conventional 5-contact VHD integrated in the deep N-well of High-Voltage processes. However, in the LV-VHD, the Hall voltage is picked-up from the external contacts while it is picked-up from the internal contacts in the HV-VHD. Such sensing schemes make not obvious the application of the well-known Spinning-Current Technique (SCT) used in Horizontal Hall Device (HHD) for offset and 1/f noise attenuation. In this paper, an accurate Finite Element Modeling (FEM) analysis of the SCT for VH-Devices is presented. All the second-order effects which influence the VHD, i.e. the Junction Field Effect (JFE) and the Carrier Velocity Saturation (CVS), are taken into account. Simulation results carried out on a LV-VHD show that SCT remains efficient even under high current biasing, i.e. when CVS takes place.
{"title":"Assessment of the spinning-current efficiency in cancelling the 1/f noise of Vertical Hall Devices through accurate FEM modeling","authors":"M. Madec, Laurent Osberger, L. Hébrard","doi":"10.1109/ICSENS.2013.6688323","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688323","url":null,"abstract":"The Vertical Hall Device integrable in a shallow N-well, and thus compatible with Low-Voltage CMOS processes, i.e. the LV-VHD, was proposed five years ago. Its layout is similar to the layout of the HV-VHD, i.e. the conventional 5-contact VHD integrated in the deep N-well of High-Voltage processes. However, in the LV-VHD, the Hall voltage is picked-up from the external contacts while it is picked-up from the internal contacts in the HV-VHD. Such sensing schemes make not obvious the application of the well-known Spinning-Current Technique (SCT) used in Horizontal Hall Device (HHD) for offset and 1/f noise attenuation. In this paper, an accurate Finite Element Modeling (FEM) analysis of the SCT for VH-Devices is presented. All the second-order effects which influence the VHD, i.e. the Junction Field Effect (JFE) and the Carrier Velocity Saturation (CVS), are taken into account. Simulation results carried out on a LV-VHD show that SCT remains efficient even under high current biasing, i.e. when CVS takes place.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116575720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688520
G. Vinci, S. Lindner, S. Mann, F. Barbon, R. Weigel, A. Koelpin
The introduction of the Six-Port receiver as a Direction-of-Arrival (DOA) detector for microwave signals brought new possibilities for countless positioning and tracking techniques thanks to its highly accurate phase measurement capability. Up to now DOA detection of a single frequency continuous wave (CW) signal source has been performed. On the other hand, detection of sources with variable signal frequency is of great interest. In this paper, the DOA detection of an FMCW radar source with a dual Six-Port demonstrator working in the Industrial-Scientific-Medical (ISM) band at 24GHz is presented. Measurement results demonstrate the detection robustness of the system and show frequency dependancy of the detection accuracy.
{"title":"Dual Six-Port based direction-of-arrival detector for FMCW radar tracking in the ISM band at 24GHz","authors":"G. Vinci, S. Lindner, S. Mann, F. Barbon, R. Weigel, A. Koelpin","doi":"10.1109/ICSENS.2013.6688520","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688520","url":null,"abstract":"The introduction of the Six-Port receiver as a Direction-of-Arrival (DOA) detector for microwave signals brought new possibilities for countless positioning and tracking techniques thanks to its highly accurate phase measurement capability. Up to now DOA detection of a single frequency continuous wave (CW) signal source has been performed. On the other hand, detection of sources with variable signal frequency is of great interest. In this paper, the DOA detection of an FMCW radar source with a dual Six-Port demonstrator working in the Industrial-Scientific-Medical (ISM) band at 24GHz is presented. Measurement results demonstrate the detection robustness of the system and show frequency dependancy of the detection accuracy.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122331722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688273
Xiang Jiang, Heng Yang, Yanhong Wu, Xinxin Li, Yuelin Wang
This paper reports a release-after-package process to fabricate a fully symmetrical sandwich z-axis accelerometer with galvanic etch stop, which employs antifuse isolation to suppress the leakage current during etching. The sandwich structure is composed of three silicon layers. The suspension beams and the electrodes are made on the top and bottom layer. The proofmass and supporting rim are made on the middle layer. The structure is formed and released by galvanic etch stop after partially packaging to increase the yield. As the leakage current may induce unwanted etch stop of sacrificial area, antifuses are used to connect the beams and mass. The antifuses are kept off-state during TMAH etching, so that the middle layer is selectively etched to form the mass while the top and bottom layers are protected by galvanic cell. After the structure is released, the antifuse is breakdown to on-state to connect the beams and mass electrically. Two structures have been fabricated with the technique.
{"title":"Fabrication of z-axis accelerometer with galvanic etch stop and antifuse isolation","authors":"Xiang Jiang, Heng Yang, Yanhong Wu, Xinxin Li, Yuelin Wang","doi":"10.1109/ICSENS.2013.6688273","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688273","url":null,"abstract":"This paper reports a release-after-package process to fabricate a fully symmetrical sandwich z-axis accelerometer with galvanic etch stop, which employs antifuse isolation to suppress the leakage current during etching. The sandwich structure is composed of three silicon layers. The suspension beams and the electrodes are made on the top and bottom layer. The proofmass and supporting rim are made on the middle layer. The structure is formed and released by galvanic etch stop after partially packaging to increase the yield. As the leakage current may induce unwanted etch stop of sacrificial area, antifuses are used to connect the beams and mass. The antifuses are kept off-state during TMAH etching, so that the middle layer is selectively etched to form the mass while the top and bottom layers are protected by galvanic cell. After the structure is released, the antifuse is breakdown to on-state to connect the beams and mass electrically. Two structures have been fabricated with the technique.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122931638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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