Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688290
A. Frangi, B. de Masi, G. Langfelder, D. Paci
We review the design of Lorentz force-based magnetometers to be employed in MEMS inertial measurement units. Taking into account the constraints of an industrial MEMS technology already used for accelerometers and gyroscopes, it has been recently shown that standard designs have intrinsic limitations. E.g. in the classical magnetometer operated at resonance where two parallel current carrying springs are connected by a central shuttle on which sensing parallel plates are mounted, the sensitivity does not depend on the number of plates and is limited to typical values around 1aF/(μT mA) at 1mbar. In this paper two solutions have been investigated: springs have been used for both actuation and sensing, with no sensing plates; exploiting better knowledge of rarefied gas dynamics, new stators have been designed. The combination of these factors has increased the sensitivity to 4.5aF/(μT mA) at 1mbar as predicted by numerical models and verified in experiments.
{"title":"Optimization of Lorentz-force MEMS magnetometers using rarefied-gas-theory","authors":"A. Frangi, B. de Masi, G. Langfelder, D. Paci","doi":"10.1109/ICSENS.2013.6688290","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688290","url":null,"abstract":"We review the design of Lorentz force-based magnetometers to be employed in MEMS inertial measurement units. Taking into account the constraints of an industrial MEMS technology already used for accelerometers and gyroscopes, it has been recently shown that standard designs have intrinsic limitations. E.g. in the classical magnetometer operated at resonance where two parallel current carrying springs are connected by a central shuttle on which sensing parallel plates are mounted, the sensitivity does not depend on the number of plates and is limited to typical values around 1aF/(μT mA) at 1mbar. In this paper two solutions have been investigated: springs have been used for both actuation and sensing, with no sensing plates; exploiting better knowledge of rarefied gas dynamics, new stators have been designed. The combination of these factors has increased the sensitivity to 4.5aF/(μT mA) at 1mbar as predicted by numerical models and verified in experiments.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125078615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688562
T. Xu, M. Potkonjak
Random Number Generator (RNG) plays an essential role in many sensor network systems and applications, such as security and robust communication. We have developed the first digital hardware random number generator (DHRNG). DHRNG has a small footprint and requires ultra-low energy. It uses a new recursive structure that directly targets efficient FPGA implementation. The core idea is to place or extract random values in FPGA configuration bits and randomly connect the building blocks. We present our architecture, introduce accompanying protocols for secure public key communication, and adopt the NIST randomness test on the DHRNG's output stream.
{"title":"Lightweight digital hardware random number generators","authors":"T. Xu, M. Potkonjak","doi":"10.1109/ICSENS.2013.6688562","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688562","url":null,"abstract":"Random Number Generator (RNG) plays an essential role in many sensor network systems and applications, such as security and robust communication. We have developed the first digital hardware random number generator (DHRNG). DHRNG has a small footprint and requires ultra-low energy. It uses a new recursive structure that directly targets efficient FPGA implementation. The core idea is to place or extract random values in FPGA configuration bits and randomly connect the building blocks. We present our architecture, introduce accompanying protocols for secure public key communication, and adopt the NIST randomness test on the DHRNG's output stream.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128395332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688357
J. Lu, H. Okada, T. Itoh, R. Maeda, T. Harada
Pursuit of the lowest size-limit of wireless sensor node may not only reduce production cost and power consumption, but also enable its layout-free ubiquitous applications, especially in `green' sensor network to compress energy consumption through visibility and optimization. In this work, we engage in developing the world smallest wireless sensor node form both system block integration and physical interconnection points-of-view. A customized RF-transmitter IC with low power consumption, universal interface to analog and digital sensors, and power management function was developed by using 0.18um 1.8V/3.3V 1P6M logic process. By introducing buried bump interconnection technology (B2it™), one of the world smallest wireless sensor nodes for humidity and temperature monitoring was successfully achieved with the size of 3.9×3.9×3.5mm. Configuration of above sensor node also enables its easy assembly with stand-alone power source and flexible antenna for wide variety of applications.
{"title":"Towards the world smallest wireless sensor nodes with low power consumption for ‘Green’ sensor networks","authors":"J. Lu, H. Okada, T. Itoh, R. Maeda, T. Harada","doi":"10.1109/ICSENS.2013.6688357","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688357","url":null,"abstract":"Pursuit of the lowest size-limit of wireless sensor node may not only reduce production cost and power consumption, but also enable its layout-free ubiquitous applications, especially in `green' sensor network to compress energy consumption through visibility and optimization. In this work, we engage in developing the world smallest wireless sensor node form both system block integration and physical interconnection points-of-view. A customized RF-transmitter IC with low power consumption, universal interface to analog and digital sensors, and power management function was developed by using 0.18um 1.8V/3.3V 1P6M logic process. By introducing buried bump interconnection technology (B2it™), one of the world smallest wireless sensor nodes for humidity and temperature monitoring was successfully achieved with the size of 3.9×3.9×3.5mm. Configuration of above sensor node also enables its easy assembly with stand-alone power source and flexible antenna for wide variety of applications.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131053842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688178
J. Becker, M. Trotter, J. Griffin
Backscatter radio frequency (RF) tags and radio frequency identification (RFID) tags can be used to create wireless sensors that do not require a battery by using the tag antenna's electrical load as a transducer. This paper presents such a backscatter sensor system operating in the 5.8 GHz unlicensed frequency band that wirelessly senses distance (i.e., displacement) between one and five millimeters. The system senses the variable impedance of a covered, open-circuit microstrip line and uses two fixed antenna load impedances to remove the effects of the radio channel. The primary contribution of this paper is a demonstration of the wireless sensing system in which the binary position of a human finger (e.g., “bent” or “straight”) is measured using a passive transducer for wireless human-computer-interaction (HCI) applications.
{"title":"Passive displacement sensing using backscatter RFID with multiple loads","authors":"J. Becker, M. Trotter, J. Griffin","doi":"10.1109/ICSENS.2013.6688178","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688178","url":null,"abstract":"Backscatter radio frequency (RF) tags and radio frequency identification (RFID) tags can be used to create wireless sensors that do not require a battery by using the tag antenna's electrical load as a transducer. This paper presents such a backscatter sensor system operating in the 5.8 GHz unlicensed frequency band that wirelessly senses distance (i.e., displacement) between one and five millimeters. The system senses the variable impedance of a covered, open-circuit microstrip line and uses two fixed antenna load impedances to remove the effects of the radio channel. The primary contribution of this paper is a demonstration of the wireless sensing system in which the binary position of a human finger (e.g., “bent” or “straight”) is measured using a passive transducer for wireless human-computer-interaction (HCI) applications.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126972626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688205
F. Puppo, M. Doucey, T. Moh, G. Pandraud, P. Sarro, G. De Micheli, S. Carrara
This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW-FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions.
{"title":"Femto-molar sensitive field effect transistor biosensors based on silicon nanowires and antibodies","authors":"F. Puppo, M. Doucey, T. Moh, G. Pandraud, P. Sarro, G. De Micheli, S. Carrara","doi":"10.1109/ICSENS.2013.6688205","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688205","url":null,"abstract":"This article presents electrically-based sensors made of high quality silicon nanowire field effect transistors (SiNW-FETs) for high sensitive detection of vascular endothelial growth factor (VEGF) molecules. SiNW-FET devices, fabricated through an IC/CMOS compatible top-down approach, are covalently functionalized with VEGF monoclonal antibodies in order to sense VEGF. Increasing concentrations of VEGF in the femto molar range determine increasing conductance values as proof of occurring immuno-reactions at the nanowire (NW) surface. These results confirm data in literature about the possibility of sensing pathogenic factors with SiNW-FET sensors, introducing the innovating aspect of detecting biomolecules in dry conditions.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130715663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688365
Cindy Schmadicke, M. Potschke, L. Renner, G. Cuniberti
We present an alternative electrochemical synthesis process of copper nanowires from aqueous solution. The common widespread methods for the fabrication of copper nanowires suffer a number of drawbacks such as the complexity of procedures steps, the resulting nanowires usually are of short length and have a nonlinear morphology. We address these shortcomings with a one-step method that allows preparing copper nanowires fast and with a high surface-to-volume ratio. The grown nanowires are already connected to the electrodes without further processing. We found that the nanowires diameter can be controlled by the frequency of the applied alternating voltage. Furthermore, we analyze the influence of the electric field profile on the morphology of the nanowires. Using an optimized protocol we are able to grow copper nanowires with a diameter of 100 nm and a length of up to several micrometers that exhibited ohmic behavior. Future uses of the nanowires after their oxidation are sensor applications, particularly gas sensors.
{"title":"A novel electrochemical synthesis route for copper nanowire formation","authors":"Cindy Schmadicke, M. Potschke, L. Renner, G. Cuniberti","doi":"10.1109/ICSENS.2013.6688365","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688365","url":null,"abstract":"We present an alternative electrochemical synthesis process of copper nanowires from aqueous solution. The common widespread methods for the fabrication of copper nanowires suffer a number of drawbacks such as the complexity of procedures steps, the resulting nanowires usually are of short length and have a nonlinear morphology. We address these shortcomings with a one-step method that allows preparing copper nanowires fast and with a high surface-to-volume ratio. The grown nanowires are already connected to the electrodes without further processing. We found that the nanowires diameter can be controlled by the frequency of the applied alternating voltage. Furthermore, we analyze the influence of the electric field profile on the morphology of the nanowires. Using an optimized protocol we are able to grow copper nanowires with a diameter of 100 nm and a length of up to several micrometers that exhibited ohmic behavior. Future uses of the nanowires after their oxidation are sensor applications, particularly gas sensors.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132466000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688346
R. Surapaneni, Q. Guo, D. Young, C. Mastrangelo
We present the development, fabrication and testing results of a new high-density flexible sensor array (HDFA) suitable of recording three-axis stresses with high spatial resolution. The new HDFA consists of 676 (26×26) sensing cells fabricated on top of a high-density flex circuit substrate. Each sensing cell is implemented using four floating comb electrodes separated from the flex substrate by a thin layer of a compressible PDMS film. Each sensing cell measures 2.77×2.55 mm2 thus packing 2704 capacitors in an area of ~ 50 cm2. The HDFA is read using a high-speed switched-capacitor circuit with a 13-bit resolution at full frame rates of 100 Hz (~0.8Mb/s). The new array is capable of detecting contact line displacements as low as 35 μm and contact line velocities as low as 38 μm/s.
{"title":"A very high density floating electrode flexible sensor array for high-resolution measurements of contact forces","authors":"R. Surapaneni, Q. Guo, D. Young, C. Mastrangelo","doi":"10.1109/ICSENS.2013.6688346","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688346","url":null,"abstract":"We present the development, fabrication and testing results of a new high-density flexible sensor array (HDFA) suitable of recording three-axis stresses with high spatial resolution. The new HDFA consists of 676 (26×26) sensing cells fabricated on top of a high-density flex circuit substrate. Each sensing cell is implemented using four floating comb electrodes separated from the flex substrate by a thin layer of a compressible PDMS film. Each sensing cell measures 2.77×2.55 mm2 thus packing 2704 capacitors in an area of ~ 50 cm2. The HDFA is read using a high-speed switched-capacitor circuit with a 13-bit resolution at full frame rates of 100 Hz (~0.8Mb/s). The new array is capable of detecting contact line displacements as low as 35 μm and contact line velocities as low as 38 μm/s.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130874865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688156
A. Vergara, K. Benkstein, S. Semancik
This study examines methods for decreasing the response time of chemiresistive, metal oxide microhotplate gas sensors. We describe a successful approach that employs an innovative pulsed-temperature operation methodology for increasing the speeds at which analytes may be recognized. By implementing the suggested strategy, we obtain, in a data-driven fashion, insights into the transduction mechanisms of nanostructured sensing-films that may ultimately guide the selection of modulating frequencies that optimally reduce the sensor-analyte response time while preserving its high discrimination and quantification performance.
{"title":"Thermally-assisted transient analysis for reducing the response time of microhotplate gas sensors","authors":"A. Vergara, K. Benkstein, S. Semancik","doi":"10.1109/ICSENS.2013.6688156","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688156","url":null,"abstract":"This study examines methods for decreasing the response time of chemiresistive, metal oxide microhotplate gas sensors. We describe a successful approach that employs an innovative pulsed-temperature operation methodology for increasing the speeds at which analytes may be recognized. By implementing the suggested strategy, we obtain, in a data-driven fashion, insights into the transduction mechanisms of nanostructured sensing-films that may ultimately guide the selection of modulating frequencies that optimally reduce the sensor-analyte response time while preserving its high discrimination and quantification performance.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128784803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688154
S. Narayanan, M. Agah, G. Rice
This paper reports a 2cm × 1cm easy-to-micromachine helium discharge photoionization detector (μHeDPID) for use in micro gas chromatography by utilizing a lift-off process. This universal detector consumes a miserly 2.5mW for plasma generation and non-destructively photoionizes analyte compounds, thus avoiding fouling of electrodes. The ionized species is detected by a remote electrode connected to a picoammeter. The detector exhibits at least 350pg and 50ppm detection limit for n-octane in air. Despite the detector simplicity, its efficiency is in par with previously reported destructive plasma detectors which are based on more sophisticated spectrometric analysis.
{"title":"A micro helium-discharge photoionization detector for gas sensing","authors":"S. Narayanan, M. Agah, G. Rice","doi":"10.1109/ICSENS.2013.6688154","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688154","url":null,"abstract":"This paper reports a 2cm × 1cm easy-to-micromachine helium discharge photoionization detector (μHeDPID) for use in micro gas chromatography by utilizing a lift-off process. This universal detector consumes a miserly 2.5mW for plasma generation and non-destructively photoionizes analyte compounds, thus avoiding fouling of electrodes. The ionized species is detected by a remote electrode connected to a picoammeter. The detector exhibits at least 350pg and 50ppm detection limit for n-octane in air. Despite the detector simplicity, its efficiency is in par with previously reported destructive plasma detectors which are based on more sophisticated spectrometric analysis.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128812363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-12-19DOI: 10.1109/ICSENS.2013.6688174
Yu-Chieh Huang, Guan-Ting Yeh, Tzu-Sen Yang, J. Chiou
This paper proposes a novel micro-capacitor sensor for intraocular pressure (IOP) measurement on soft contact lens. The sensor was designed and fabricated by using MEMS fabrication technologies. The contact lens is for wearing on a cornea such that a curvature of the contact lens corresponds substantially to that of the cornea, and is preferably made of Hydroxyethylmethacrylate (HEMA) by cast-molding method of soft contact lens for high oxygen permeability and comfortable long-duration wearing. The prototype without wireless antenna has been implemented with a sensitivity of 0.43 pF/mmHg in measurement of human eye like balloon pressure test between 100 mmHg and 180 mmHg. The results show its high stability and reproducibility in a series of repeatable pressure variation. In future work the micro-capacitor will be tested on enucleated porcine eyes with better and integrated with a radio frequency integrated circuit and antenna on soft contact lens so that IOP value could be transferred to voltage value via capacitor to voltage converter and transmits IOP sensing signal by wireless telemetry system.
{"title":"A contact lens sensor system with a micro-capacitor for wireless intraocular pressure monitoring","authors":"Yu-Chieh Huang, Guan-Ting Yeh, Tzu-Sen Yang, J. Chiou","doi":"10.1109/ICSENS.2013.6688174","DOIUrl":"https://doi.org/10.1109/ICSENS.2013.6688174","url":null,"abstract":"This paper proposes a novel micro-capacitor sensor for intraocular pressure (IOP) measurement on soft contact lens. The sensor was designed and fabricated by using MEMS fabrication technologies. The contact lens is for wearing on a cornea such that a curvature of the contact lens corresponds substantially to that of the cornea, and is preferably made of Hydroxyethylmethacrylate (HEMA) by cast-molding method of soft contact lens for high oxygen permeability and comfortable long-duration wearing. The prototype without wireless antenna has been implemented with a sensitivity of 0.43 pF/mmHg in measurement of human eye like balloon pressure test between 100 mmHg and 180 mmHg. The results show its high stability and reproducibility in a series of repeatable pressure variation. In future work the micro-capacitor will be tested on enucleated porcine eyes with better and integrated with a radio frequency integrated circuit and antenna on soft contact lens so that IOP value could be transferred to voltage value via capacitor to voltage converter and transmits IOP sensing signal by wireless telemetry system.","PeriodicalId":258260,"journal":{"name":"2013 IEEE SENSORS","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126387326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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