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2009 IEEE Asian Solid-State Circuits Conference最新文献

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A 45nm 8-core enterprise Xeon® processor 45纳米8核企业至强®处理器
Pub Date : 1900-01-01 DOI: 10.1109/ISSCC.2009.4977305
S. Rusu, S. Tam, H. Muljono, J. Stinson, D. Ayers, Jonathan Chang, Raj Varada, Matt Ratta, Sailesh Kottapalli
A 2.3B transistors, 8-core, 16-thread 64-bit Xeon® EX processor with a 24MB shared L3 cache was implemented in a 45nm 9-metal process. Multiple clock and voltage domains are employed to reduce power consumption. Long channel devices and cache sleep mode are used to minimize leakage. Core and cache recovery improve manufacturing yields and enable multiple product flavors using the same silicon die and package. The disabled blocks are both clock and power gated to minimize their power consumption. Idle power is reduced by shutting off the un-terminated I/O links and shedding phases in the voltage regulator to improve the power conversion efficiency.
采用45纳米9金属工艺实现了2.3B晶体管,8核,16线程64位Xeon®EX处理器,具有24MB共享L3缓存。采用多个时钟域和电压域来降低功耗。长通道设备和缓存休眠模式用于减少泄漏。核心和缓存恢复提高了制造产量,并使用相同的硅芯片和封装实现多种产品口味。禁用的块都是时钟和电源门控,以尽量减少其功耗。通过关闭未终止的I/O链路和电压调节器中的脱落相来减少空闲功率,以提高功率转换效率。
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引用次数: 73
A low supply voltage operation SRAM with HCI trimmed sense amplifiers 低供电电压操作SRAM与HCI修整感测放大器
Pub Date : 1900-01-01 DOI: 10.1109/asscc.2009.5357218
A. Kawasumi, Y. Takeyama, O. Hirabayashi, K. Kushida, Y. Fujimura, T. Yabe
This paper proposes a new scheme utilizing a small offset voltage (Vos) sense amplifier (SA) to reduce the deterioration of the read speed and the cell stability at the low power supply. This concept is introduced to realize a low supply voltage operation SRAM with a small area penalty. The transistor threshold voltage (Vth) shift caused by Hot Carrier Injection (HCI) [1] is used for Vos trimming after the chip fabrication. The SA with the offset trimming circuit is implemented in 40nm CMOS technology and the reduction of Vos by 76mV has been confirmed with the measurement and simulation results. This reduction corresponds to the improvement of read frequency by 40% and 8x failure rate improvements at 0.6V supply voltage.
本文提出了一种利用小偏置电压(Vos)感测放大器(SA)的新方案,以减少在低电源下读取速度和电池稳定性的恶化。引入这一概念是为了实现具有小面积惩罚的低电源电压操作SRAM。热载流子注入(HCI)[1]引起的晶体管阈值电压(Vth)移位用于芯片制造后的Vos修整。在40nm CMOS工艺上实现了带有偏置修整电路的SA,通过测量和仿真结果证实了Vos降低了76mV。这种降低对应于在0.6V电源电压下读取频率提高40%和故障率提高8倍。
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引用次数: 6
A 26.9K 314.5Mbps soft (32400, 32208) BCH decoder chip for DVB-S2 system 用于DVB-S2系统的26.9K 314.5Mbps软(32400,32208)BCH解码器芯片
Pub Date : 1900-01-01 DOI: 10.1109/asscc.2009.5357174
Yi-Min Lin, Chih-Lung Chen, Hsie-Chia Chang, Chen-Yi Lee
This paper provides a soft BCH decoder using error magnitudes to deal with least reliable bits. With soft information from the previous decoder defined in digital video broadcasting (DVB), the proposed soft BCH decoder provides much lower complexity and latency than the traditional hard BCH decoder while still maintaining performance. The proposed error locator evaluator architecture evaluates error locations without Chien search, leading to high throughput. Börck-Pereyra error magnitudes solvers (BP-EMS) is presented to improve decoding efficiency and hardware complexity. The experimental result reveals that our proposed soft (32400, 32208) BCH decoder defined in DVB-S2 system can save 50.0% gate-count and achieve 314.5Mbps in standard CMOS 90nm technology.
本文提出了一种利用误差幅度处理最不可靠位的软BCH解码器。利用数字视频广播(DVB)中定义的先前解码器的软信息,所提出的软BCH解码器在保持性能的同时,具有比传统硬BCH解码器低得多的复杂性和延迟。所提出的错误定位器评估器架构评估错误位置,而不需要重复搜索,从而提高了吞吐量。为提高解码效率和硬件复杂度,提出了Börck-Pereyra误差大小求解器(BP-EMS)。实验结果表明,在DVB-S2系统中定义的软(32400,32208)BCH解码器可以节省50.0%的门数,在标准CMOS 90nm技术下达到314.5Mbps。
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引用次数: 2
期刊
2009 IEEE Asian Solid-State Circuits Conference
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