Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745649
Sergeh Vartanian, G. Allen, D. Thorbourn
We present low-cost and effective methods and results for high levels of Total Ionizing Dose testing performed on the Xilinx Kintex UltraScale (20nm) Field-Programmable Gate Array evaluation board using 60Co and 2 MeV electron sources.
{"title":"SRAM-Based FPGA: High Dose Test Methods Using Evaluation Boards","authors":"Sergeh Vartanian, G. Allen, D. Thorbourn","doi":"10.1109/radecs47380.2019.9745649","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745649","url":null,"abstract":"We present low-cost and effective methods and results for high levels of Total Ionizing Dose testing performed on the Xilinx Kintex UltraScale (20nm) Field-Programmable Gate Array evaluation board using 60Co and 2 MeV electron sources.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"137 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133286967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745673
C. Virmontois, V. Lalucaa, J. Belloir, G. Bascoul, A. Bardoux
This paper focuses on the similarities between heavy ions and LASER tests to evaluate single event effect in front-side and back-side illuminated CMOS image sensors using last generation imaging process. The results highlight the sensitivity to these devices to single event and combined results provide information related to layout architecture sensitivity.
{"title":"Single Event Effect Similarities between Heavy Ions and LASER tests in Advanced CMOS Image Sensors","authors":"C. Virmontois, V. Lalucaa, J. Belloir, G. Bascoul, A. Bardoux","doi":"10.1109/radecs47380.2019.9745673","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745673","url":null,"abstract":"This paper focuses on the similarities between heavy ions and LASER tests to evaluate single event effect in front-side and back-side illuminated CMOS image sensors using last generation imaging process. The results highlight the sensitivity to these devices to single event and combined results provide information related to layout architecture sensitivity.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134280346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745722
Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo
A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.
{"title":"Radiation-induced Degradation Mechanism in Double-SOI pMOSFETs","authors":"Yang Huang, Fanyu Liu, Binhong Li, Bo Li, Jiantou Gao, Lei Wang, Xiaohui Su, Hainan Liu, Zhengsheng Han, Jiajun Luo","doi":"10.1109/radecs47380.2019.9745722","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745722","url":null,"abstract":"A significant degradation of drain current in Double-SOI pMOSFET is observed after irradiation. The degradation mechanism is analyzed by extracting the related parameters from Y-function. Impact of negative SOI bias on parameter degradation is investigated.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133471168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745645
Jingyan Xu, Yang Guo, Ruiqiang Song, Yaqing Chi, Bin Liang, Chunmei Hu, Wanxia Qu
We have performed an irradiation test of heavy ions on 28-nm fully-depleted silicon-on-insulator (FDSOI) SRAMs. Linear energy transfer (LET), temperature, supply voltage and body bias dependence of single event upset (SEU) cross section in 28-nm FDSOI SRAMs is investigated. The experimental results show that as the LET increases, the SEU cross section increases, and there is no multiple cell upset (MCU). The LET threshold is less than 3.3 MeV-cm2/mg. The SEU is not sensitive to temperature under the 28-nm FDSOI process. Besides, the SEU resistance is better at high temperatures than at normal temperature. The influence of the supply voltage on the SEU cross section is uncertain. The best SEU resistance under the heavy ion striking is in the zero-bias state.
{"title":"Experimental investigation of SEUs Induced by Heavy Ions in 28-nm FDSOI SRAMs","authors":"Jingyan Xu, Yang Guo, Ruiqiang Song, Yaqing Chi, Bin Liang, Chunmei Hu, Wanxia Qu","doi":"10.1109/radecs47380.2019.9745645","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745645","url":null,"abstract":"We have performed an irradiation test of heavy ions on 28-nm fully-depleted silicon-on-insulator (FDSOI) SRAMs. Linear energy transfer (LET), temperature, supply voltage and body bias dependence of single event upset (SEU) cross section in 28-nm FDSOI SRAMs is investigated. The experimental results show that as the LET increases, the SEU cross section increases, and there is no multiple cell upset (MCU). The LET threshold is less than 3.3 MeV-cm2/mg. The SEU is not sensitive to temperature under the 28-nm FDSOI process. Besides, the SEU resistance is better at high temperatures than at normal temperature. The influence of the supply voltage on the SEU cross section is uncertain. The best SEU resistance under the heavy ion striking is in the zero-bias state.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130687130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745711
Kan Li, E. Zhang, S. Bonaldo, A. Sternberg, J. Kozub, Andrew M. Tonigan, M. Reaz, L. Ryder, Kaitlyn L. Ryder, H. Gong, S. Weiss, R. Weller, A. Vardi, J. D. del Alamo, R. Reed, D. Fleetwood, peixiong zhao
The single-event transient (SET) response and charge collection mechanisms are investigated for InGaAs FinFETs on InP substrates with sub-10-nm fin widths through pulsed laser irradiation. The dependences on fin width, $V_{DS}$ and $V_{GS}$ are examined. Consistent with devices with fin widths larger than 10 nm, higher transient peak and greater charge collection are observed in wider fin devices as a result of larger active volumes. The amplitude of the SET and the collected charge also increase with $V_{DS}$ due to the enhancement of electric field along the channel, and decrease as the overdrive voltage increases due to the reduced excess electron density. Charge collection is influenced strongly by the shunt effect from source-to-drain when the laser spot covers the channel region, and the parasitic bipolar effect caused by accumulated holes underneath the channel.
{"title":"Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths","authors":"Kan Li, E. Zhang, S. Bonaldo, A. Sternberg, J. Kozub, Andrew M. Tonigan, M. Reaz, L. Ryder, Kaitlyn L. Ryder, H. Gong, S. Weiss, R. Weller, A. Vardi, J. D. del Alamo, R. Reed, D. Fleetwood, peixiong zhao","doi":"10.1109/radecs47380.2019.9745711","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745711","url":null,"abstract":"The single-event transient (SET) response and charge collection mechanisms are investigated for InGaAs FinFETs on InP substrates with sub-10-nm fin widths through pulsed laser irradiation. The dependences on fin width, $V_{DS}$ and $V_{GS}$ are examined. Consistent with devices with fin widths larger than 10 nm, higher transient peak and greater charge collection are observed in wider fin devices as a result of larger active volumes. The amplitude of the SET and the collected charge also increase with $V_{DS}$ due to the enhancement of electric field along the channel, and decrease as the overdrive voltage increases due to the reduced excess electron density. Charge collection is influenced strongly by the shunt effect from source-to-drain when the laser spot covers the channel region, and the parasitic bipolar effect caused by accumulated holes underneath the channel.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134061953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745646
A. Sicard, S. Bourdarie, D. Lazaro, D. Standarovski, R. Ecoffet, L. Lanzerotti, A. Gerrard
A new version of the ONERA GREEN model (GREEN V3) is in development, with a focus on low-energy proton fluxes (1–10 MeV). Newly available measurements of the magnetosphere population of these particles make a revision of the GREEN model timely. Measurements from the RBSPICE instrument on the dual Van Allen Probes spacecraft and from the SEM2 instrument on the NOAA-POES spacecraft have been used to construct a proton flux model in this energy range. In order to take into account the dependence on the solar cycle of proton fluxes in the radiation belts, the correlation between those fluxes and the F10.7 solar radio noise has been studied. This paper describes the method used to estimate the proton fluxes between $boldsymbol{mathrm{L}^{ast}=2}$ and $boldsymbol{mathrm{L}^{ast}=6}$ for GREEN V3. Only the proton energy range 2.5-6.9 MeV is shown here but a larger energy range (1–10 MeV) has been studied.
{"title":"A new model for the 1-10 MeV proton fluxes (part of ONERA GREEN-V3 model)","authors":"A. Sicard, S. Bourdarie, D. Lazaro, D. Standarovski, R. Ecoffet, L. Lanzerotti, A. Gerrard","doi":"10.1109/radecs47380.2019.9745646","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745646","url":null,"abstract":"A new version of the ONERA GREEN model (GREEN V3) is in development, with a focus on low-energy proton fluxes (1–10 MeV). Newly available measurements of the magnetosphere population of these particles make a revision of the GREEN model timely. Measurements from the RBSPICE instrument on the dual Van Allen Probes spacecraft and from the SEM2 instrument on the NOAA-POES spacecraft have been used to construct a proton flux model in this energy range. In order to take into account the dependence on the solar cycle of proton fluxes in the radiation belts, the correlation between those fluxes and the F10.7 solar radio noise has been studied. This paper describes the method used to estimate the proton fluxes between $boldsymbol{mathrm{L}^{ast}=2}$ and $boldsymbol{mathrm{L}^{ast}=6}$ for GREEN V3. Only the proton energy range 2.5-6.9 MeV is shown here but a larger energy range (1–10 MeV) has been studied.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116177273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745698
S. Vargas-Sierra, B. Tanios, J.J. González-Luján, F. Tilhac, M. Domínguez, C. Poivey
This work presents the comparative study of the TID radiation sensitivity of three COTS NOR Flash memories for the ESA JUpiter ICy moons Explorer (JUICE) Mission.
{"title":"TID Radiation Effects of 1Gb COTS NOR Flash Memories for the ESA JUICE Mission","authors":"S. Vargas-Sierra, B. Tanios, J.J. González-Luján, F. Tilhac, M. Domínguez, C. Poivey","doi":"10.1109/radecs47380.2019.9745698","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745698","url":null,"abstract":"This work presents the comparative study of the TID radiation sensitivity of three COTS NOR Flash memories for the ESA JUpiter ICy moons Explorer (JUICE) Mission.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121960566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745707
Yuya Kawano, Yuto Tsukita, J. Furuta, Kazutoshi Kobayashi
We implemented 50k-bit shift registers on SRAM-based and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is $3.8 times 10^{7}$ hour/failure, while MTTF in flash-based one is $5.5 times 10^{9}$ hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.
{"title":"Measuring SER by Neutron Irradiation Between Volatile SRAM-based and Nonvolatile Flash-based FPGAs","authors":"Yuya Kawano, Yuto Tsukita, J. Furuta, Kazutoshi Kobayashi","doi":"10.1109/radecs47380.2019.9745707","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745707","url":null,"abstract":"We implemented 50k-bit shift registers on SRAM-based and flash-based FPGAs to investigate their radiation hardness. As a result, soft error rates of flip flops on both FPGAs are around 40 FIT/Mbit. Mean time to failure (MTTF) in the SRAM-based one is $3.8 times 10^{7}$ hour/failure, while MTTF in flash-based one is $5.5 times 10^{9}$ hour/failure. Those results clearly show that in the SRAM-based FPGA must be rebooted or configuration memory must be refreshed much more frequently than the flash-based one.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"708 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121476306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745643
E. Mrozovskaya, V. Anashin, G. Protopopov
The method for estimating the LET spectrum using the data of SEE monitors using the existing SEP and GCR models is proposed. The accuracy of the method is estimated taking into account variations in the characteristics of the space environment.
{"title":"Method for Estimating the LET Spectrum Using Data from SEE Monitors Based on SRAM","authors":"E. Mrozovskaya, V. Anashin, G. Protopopov","doi":"10.1109/radecs47380.2019.9745643","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745643","url":null,"abstract":"The method for estimating the LET spectrum using the data of SEE monitors using the existing SEP and GCR models is proposed. The accuracy of the method is estimated taking into account variations in the characteristics of the space environment.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121780396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-09-01DOI: 10.1109/radecs47380.2019.9745640
L. Tambara, Francisco Hernandez, F. Sturesson, Magnus Hjorth, J. Andersson, R. Weigand
The GR740, developed by Cobham Gaisler, is a radiation-hardened System-on-Chip that features a quad-core fault-tolerant LEON4 processor. The GR740 has been designated as the European Space Agency's “Next Generation Microprocessor.” The GR740 is implemented in the 65nm CMOS technology platform for space applications developed by STMicroelectronics. This work presents the Single Event Effect characterization of the GR740 flight silicon. The low rate of functional errors recorded in application-level testing under irradiation demonstrates the effectiveness of the radiation-hardening scheme selected for this device. Although an extensive number of radiation-induced events in the internal memory cells were recorded, all events were successfully mitigated and corrected. No evidence of error build-up was observed in the GR740.
{"title":"Single Event Effect Characterization of the GR740 Rad-Hard Quad-Core LEON4FT System-on-Chip","authors":"L. Tambara, Francisco Hernandez, F. Sturesson, Magnus Hjorth, J. Andersson, R. Weigand","doi":"10.1109/radecs47380.2019.9745640","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745640","url":null,"abstract":"The GR740, developed by Cobham Gaisler, is a radiation-hardened System-on-Chip that features a quad-core fault-tolerant LEON4 processor. The GR740 has been designated as the European Space Agency's “Next Generation Microprocessor.” The GR740 is implemented in the 65nm CMOS technology platform for space applications developed by STMicroelectronics. This work presents the Single Event Effect characterization of the GR740 flight silicon. The low rate of functional errors recorded in application-level testing under irradiation demonstrates the effectiveness of the radiation-hardening scheme selected for this device. Although an extensive number of radiation-induced events in the internal memory cells were recorded, all events were successfully mitigated and corrected. No evidence of error build-up was observed in the GR740.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115409269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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