Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745700
{"title":"[Copyright notice]","authors":"","doi":"10.1109/radecs47380.2019.9745700","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745700","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122475985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745675
T. Stein, Arne Fredriksen, J. Holter, Petter Øya, Ketil Rϕed, D. Meier
The IDEAS IDE3380 mixed-signal SiPM readout ASIC and ADC technology for space in AMS 0.35μm CMOS shows no relevant change below 340 krad(Si) TID, no latch-up below 137 MeV cm2/mg, and no SEU/SETs below 18 MeV cm2/mg.
{"title":"Radiation Testing of the IDE3380 SiPM Readout ASIC","authors":"T. Stein, Arne Fredriksen, J. Holter, Petter Øya, Ketil Rϕed, D. Meier","doi":"10.1109/radecs47380.2019.9745675","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745675","url":null,"abstract":"The IDEAS IDE3380 mixed-signal SiPM readout ASIC and ADC technology for space in AMS 0.35μm CMOS shows no relevant change below 340 krad(Si) TID, no latch-up below 137 MeV cm2/mg, and no SEU/SETs below 18 MeV cm2/mg.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130638522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745663
Alexander Aponte-Moreno, Felipe Restrepo-Calle, C. Pedraza
This paper presents a method to reduce execution time overheads in the design of radiation-induced fault-tolerant systems by means of Approximate Computing and selective FT software techniques. A case study for MSP430 microcontroller is presented.
{"title":"A Low-Overhead Radiation Hardening Approach using Approximate Computing and Selective Fault Tolerance Techniques at the Software Level","authors":"Alexander Aponte-Moreno, Felipe Restrepo-Calle, C. Pedraza","doi":"10.1109/radecs47380.2019.9745663","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745663","url":null,"abstract":"This paper presents a method to reduce execution time overheads in the design of radiation-induced fault-tolerant systems by means of Approximate Computing and selective FT software techniques. A case study for MSP430 microcontroller is presented.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117353234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745657
T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi
A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.
{"title":"LVDS Transmitter for Cold-Spare Systems in High Flux Environments","authors":"T. Yoshikawa, Akihiro Aoyama, T. Iwata, Kazutoshi Kobayashi","doi":"10.1109/radecs47380.2019.9745657","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745657","url":null,"abstract":"A high-bandwidth LVDS Transmitter (TX) has been proposed for redundant parallel connection of semiconductor devices in cold-spare systems. The cold-spare configuration is widely adopted for secure system operation of artificial satellite exposed to highly-radiated environment. For applying to the configuration in radiation hardened application, the LVDS-TX has i) off-chip driver consisting of only NMOS transistors to enhance latch-up immunity, ii) replica biasing for common mode voltage stabilization independently to off-chip loading, iii) multiple guard ring between large NMOS and N-Well areas. The proposed LVDS-TX has been fabricated by using bulk I/O and SOI core transistors in a 65 nm FDSOI process. Measurement results show over-500Mbit/sec stable data communication, and remarkable suppression of BER (Bit Error Rate) degradation compared to commercial device under ${}^{84}text{Kr}^{17+}$ exposure of 322.0 MeV at flux of over 5x105 count/cm2/s.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124058114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745706
A. Zimpeck, Laurent Artola, G. Hubert, C. Meinhardt, F. Kastensmidt, Ricardo Reis
Transistor reordering and insertion of decoupling cells are explored to reduce the soft errors susceptibility of circuits designed with FinFETs. This work shows that robustness improves up to 37% and 10% with the respective methodologies.
{"title":"Circuit-Level Hardening Techniques to Mitigate Soft Errors in FinFET Logic Gates","authors":"A. Zimpeck, Laurent Artola, G. Hubert, C. Meinhardt, F. Kastensmidt, Ricardo Reis","doi":"10.1109/radecs47380.2019.9745706","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745706","url":null,"abstract":"Transistor reordering and insertion of decoupling cells are explored to reduce the soft errors susceptibility of circuits designed with FinFETs. This work shows that robustness improves up to 37% and 10% with the respective methodologies.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115027613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745682
S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul
In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.
{"title":"Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing","authors":"S. Guagliardo, F. Wrobel, Y. Aguiar, J. Autran, P. Leroux, F. Saigné, V. Pouget, A. Touboul","doi":"10.1109/radecs47380.2019.9745682","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745682","url":null,"abstract":"In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123236356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745719
Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou
The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.
{"title":"Behavior of Damaged Sites Introduced by SEGR in Silicon Carbide Power MOSFETs","authors":"Y. Nakada, S. Kuboyama, E. Mizuta, A. Takeyama, T. Ohshima, H. Shindou","doi":"10.1109/radecs47380.2019.9745719","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745719","url":null,"abstract":"The behavior of damage sites induced by SEGR in SiC vertical power MOSFETs was found to be essentially different from that observed in corresponding Si devices, although the electrical behavior was similarly modeled.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116715366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745674
Yu-Mi Kim, S. Yun, Young-Gi Song, Han-sung Kim, H. Kwon, Kyeryung Kim, Yong-sub Cho
Korea Multi-purpose Accelerator Complex (KOMAC) has been operating 20 MeV and 100 MeV proton beam lines to provide proton beams for various applications since 2013. A new beam line with low-flux proton densities was constructed and started beam service to user for simulation of the space radiation-like environment since 2018. The new beam line can provide a very low flux of 105 #/cm2/pulse, good uniformity within ± 10% and a large beam area with a wide range of proton energies. Recently, the irradiation room of the low-flux beam line has been upgraded with new beam diagnostics instruments and new control interface for improving the efficiency of the beam tuning process and for improving beam quality assurance. In this study, the details on the upgrade in the low flux proton irradiation room at KOMAC will be given.
{"title":"Upgrade of Low Flux Proton Irradiation Facility for Radiation Effect Test at KOMAC","authors":"Yu-Mi Kim, S. Yun, Young-Gi Song, Han-sung Kim, H. Kwon, Kyeryung Kim, Yong-sub Cho","doi":"10.1109/radecs47380.2019.9745674","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745674","url":null,"abstract":"Korea Multi-purpose Accelerator Complex (KOMAC) has been operating 20 MeV and 100 MeV proton beam lines to provide proton beams for various applications since 2013. A new beam line with low-flux proton densities was constructed and started beam service to user for simulation of the space radiation-like environment since 2018. The new beam line can provide a very low flux of 105 #/cm2/pulse, good uniformity within ± 10% and a large beam area with a wide range of proton energies. Recently, the irradiation room of the low-flux beam line has been upgraded with new beam diagnostics instruments and new control interface for improving the efficiency of the beam tuning process and for improving beam quality assurance. In this study, the details on the upgrade in the low flux proton irradiation room at KOMAC will be given.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124167801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745670
B. Du, J. E. R. Condia, M. Reorda, L. Sterpone
Abstrac1- In this paper, we propose a new hardware and synthesizable model of an embedded General Purpose Graphic Processing Unit (GPGPUs) designed for analyzing and mitigating radiation effects. Comparative SEU injection experiments confirms the model effectiveness.
{"title":"An open source embedded-GPGPU model for the accurate analysis and mitigation of SEU effects","authors":"B. Du, J. E. R. Condia, M. Reorda, L. Sterpone","doi":"10.1109/radecs47380.2019.9745670","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745670","url":null,"abstract":"Abstrac1- In this paper, we propose a new hardware and synthesizable model of an embedded General Purpose Graphic Processing Unit (GPGPUs) designed for analyzing and mitigating radiation effects. Comparative SEU injection experiments confirms the model effectiveness.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133958105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745639
C. Muller, T. Allanche, A. Morana, P. Paillet, T. Lépine, A. Boukenter, Y. Ouerdane, S. Girard
In the domain of imaging in harsh environments, adding antireflection coatings on lenses increases the flux on the sensor and minimizes the ghost images. However, the radiation can influence the performances of these coatings. In this paper, we studied such effects on commercially available antireflection coatings, up to the total ionizing dose of 1 MGy(SiO2). Online radiation-induced attenuation measurements highlight slight differences between uncoated and coated samples that are not clearly observable in post-mortem transmission and reflection spectra. We also report photoluminescence spectra.
{"title":"X-ray irradiation response of antireflection coatings","authors":"C. Muller, T. Allanche, A. Morana, P. Paillet, T. Lépine, A. Boukenter, Y. Ouerdane, S. Girard","doi":"10.1109/radecs47380.2019.9745639","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745639","url":null,"abstract":"In the domain of imaging in harsh environments, adding antireflection coatings on lenses increases the flux on the sensor and minimizes the ghost images. However, the radiation can influence the performances of these coatings. In this paper, we studied such effects on commercially available antireflection coatings, up to the total ionizing dose of 1 MGy(SiO2). Online radiation-induced attenuation measurements highlight slight differences between uncoated and coated samples that are not clearly observable in post-mortem transmission and reflection spectra. We also report photoluminescence spectra.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"2 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132644665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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