Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745661
M. Ball, Yannick Rialland, O. Bonnet, Thomas Guillemain
The PC8548E contains a Power Architecture™ processor core. The PC8548E integrates a processor that implements the Power Architecture with system logic required for networking, storage, and general-purpose embedded applications. This device, using the CMOS 90nm SOI technology from NXP, performed the Total Ionizing Dose test (with dose rate of 600 to 1000 Rad/h, and up to a total dose of 142 kRad) and the Heavy Ions tests (with a total immunity to SEL up to 86MeV.cm2/mg), to demonstrate its suitability for space applications in the “rad tolerant” category.
{"title":"SEE&TID characterization for a GHz class PowerPC rad tolerant microprocessor - PC8548E (Jul. 2019)","authors":"M. Ball, Yannick Rialland, O. Bonnet, Thomas Guillemain","doi":"10.1109/radecs47380.2019.9745661","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745661","url":null,"abstract":"The PC8548E contains a Power Architecture™ processor core. The PC8548E integrates a processor that implements the Power Architecture with system logic required for networking, storage, and general-purpose embedded applications. This device, using the CMOS 90nm SOI technology from NXP, performed the Total Ionizing Dose test (with dose rate of 600 to 1000 Rad/h, and up to a total dose of 142 kRad) and the Heavy Ions tests (with a total immunity to SEL up to 86MeV.cm2/mg), to demonstrate its suitability for space applications in the “rad tolerant” category.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129631449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745721
M. Sureau, M. Leuenberger, N. Rezzak, D. Johnson
The total ionizing dose (TID) characterization results of the Microchip radiation hardened programmable current limiting power switch IC, the LX7712, are presented. The performance after 100krad(Si) TID is determined to be good and comparable to pre-irradiation data. Some shifts were observed on some parameters only, however, none of these will impact materially the system-level performance.
{"title":"Total Ionizing Dose Characterization of Microchip Programmable Current Limiting Power Switch LX7712","authors":"M. Sureau, M. Leuenberger, N. Rezzak, D. Johnson","doi":"10.1109/radecs47380.2019.9745721","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745721","url":null,"abstract":"The total ionizing dose (TID) characterization results of the Microchip radiation hardened programmable current limiting power switch IC, the LX7712, are presented. The performance after 100krad(Si) TID is determined to be good and comparable to pre-irradiation data. Some shifts were observed on some parameters only, however, none of these will impact materially the system-level performance.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"289 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122536300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745689
P. Hornung, A. Menicucci, G. Mandorlo, G. Furano, M. Prochazka
Correctable single event upsets observed in a SRAM memory on-board of Sentinel 2A and 2B are studied, with the aim of identifying a correlation between space weather activity and the orbital time and position of occurrence of SEU. Sentinel 2A and 2B are two identical ESA satellites flying at an average altitude of 786 km. The SRAM memory under study is part of the memory system supervisor. Event rate, sampled at one orbital period, is heavily superim-posed by normal variance due to intrinsic Poisson distribution of SEE. A moving average filter extracts features attributed to the solar cycle, the South Atlantic Anomaly (SSA) seasonal behaviour and device degradation. Further data is needed to study the response to geomagnetic storms, since available ones are relative to a prolonged ‘solar lull’ period. Position data is filtered similarly, which is expected to show the movement of the SAA as seen by single events. The two satellites' filtered event positions show common features, but also peculiar, currently unexplained, short-term differences.
{"title":"Linking Single Event In-Orbit Data to Space Weather","authors":"P. Hornung, A. Menicucci, G. Mandorlo, G. Furano, M. Prochazka","doi":"10.1109/radecs47380.2019.9745689","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745689","url":null,"abstract":"Correctable single event upsets observed in a SRAM memory on-board of Sentinel 2A and 2B are studied, with the aim of identifying a correlation between space weather activity and the orbital time and position of occurrence of SEU. Sentinel 2A and 2B are two identical ESA satellites flying at an average altitude of 786 km. The SRAM memory under study is part of the memory system supervisor. Event rate, sampled at one orbital period, is heavily superim-posed by normal variance due to intrinsic Poisson distribution of SEE. A moving average filter extracts features attributed to the solar cycle, the South Atlantic Anomaly (SSA) seasonal behaviour and device degradation. Further data is needed to study the response to geomagnetic storms, since available ones are relative to a prolonged ‘solar lull’ period. Position data is filtered similarly, which is expected to show the movement of the SAA as seen by single events. The two satellites' filtered event positions show common features, but also peculiar, currently unexplained, short-term differences.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"06 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127325385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745669
Dong‐Seok Kim, Jun-Hyeok Lee, Jeong-Gil Kim, J. S. Lee, Jung-Hee Lee
We evaluated the effect of the proton irradiation energy on electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by Ar + ion-implanted isolation. The HEMTs were exposed to various irradiation energies - 0.5 MeV, 5 MeV, and 60 MeV, respectively, with a fluence of $1times 10^{14}$ p/cm2, at room temperature. The proton radiation-induced degradation of HEMTs was occurred by the displacement damage effect, which is directly related to the nonionizing energy loss (NIEL). The saturation drain current of 0.5 MeV-irradiated HEMT has more severely degraded than that of 60 MeV-irradiated HEMT because the lower proton energy has the larger NIEL. The threshold voltage of HEMTs with proton irradiation is usually positively shifted due to the reduction of 2-dimensional electron gas (2DEG) density by defects created during irradiation, however, the 60 MeV-irradiated HEMT showed the negative threshold voltage shift, which is discrepant from reported results.
{"title":"Effect of Proton Irradiation Energy on AlGaN/GaN HEMTs fabricated by Ion-implanted Isolation","authors":"Dong‐Seok Kim, Jun-Hyeok Lee, Jeong-Gil Kim, J. S. Lee, Jung-Hee Lee","doi":"10.1109/radecs47380.2019.9745669","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745669","url":null,"abstract":"We evaluated the effect of the proton irradiation energy on electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated by Ar + ion-implanted isolation. The HEMTs were exposed to various irradiation energies - 0.5 MeV, 5 MeV, and 60 MeV, respectively, with a fluence of $1times 10^{14}$ p/cm2, at room temperature. The proton radiation-induced degradation of HEMTs was occurred by the displacement damage effect, which is directly related to the nonionizing energy loss (NIEL). The saturation drain current of 0.5 MeV-irradiated HEMT has more severely degraded than that of 60 MeV-irradiated HEMT because the lower proton energy has the larger NIEL. The threshold voltage of HEMTs with proton irradiation is usually positively shifted due to the reduction of 2-dimensional electron gas (2DEG) density by defects created during irradiation, however, the 60 MeV-irradiated HEMT showed the negative threshold voltage shift, which is discrepant from reported results.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"23 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127564136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745684
N. Rezzak, Jih-Jong Wang, Alex Cai, F. Hawley, E. Hamdy
This paper presents Total Ionizing Dose (TID) results on 28nm PolarFire™ SONOS-based FPGA. Gamma and X-ray induced TID effects at the device and product level are presented and discussed. PolarFire shows very good TID performance and is radiation-tolerant up to 100 krad(SiO2).
{"title":"Total Ionizing Dose Characterization of 28 nm PolarFire SONOS-based FPGA","authors":"N. Rezzak, Jih-Jong Wang, Alex Cai, F. Hawley, E. Hamdy","doi":"10.1109/radecs47380.2019.9745684","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745684","url":null,"abstract":"This paper presents Total Ionizing Dose (TID) results on 28nm PolarFire™ SONOS-based FPGA. Gamma and X-ray induced TID effects at the device and product level are presented and discussed. PolarFire shows very good TID performance and is radiation-tolerant up to 100 krad(SiO2).","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126731013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745678
V. Pouget
{"title":"The General Chairman's Address: Welcome to these Proceedings of the 2019 Conference on Radiation and its Effects on Components and Systems","authors":"V. Pouget","doi":"10.1109/radecs47380.2019.9745678","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745678","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132866494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745659
G. Gasiot, F. Abouzeid, V. Malherbe, J. Damiens, F. Monsieur, C. L. de Boissac, Dimitri Soussan, Vincent Lorquet, T. Théry, P. Roche
This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.
{"title":"New Single Event Transient phenomenon in 28FDSOI and its impact on hardening","authors":"G. Gasiot, F. Abouzeid, V. Malherbe, J. Damiens, F. Monsieur, C. L. de Boissac, Dimitri Soussan, Vincent Lorquet, T. Théry, P. Roche","doi":"10.1109/radecs47380.2019.9745659","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745659","url":null,"abstract":"This paper shows measurement of new Single Event Transient in FDSOI28 technology. These SETs come from layers beneath the Buried Oxide connected to active nodes through transistor back-gate (or bulk) contact. These back-gate structures are used for threshold voltage control of transistors in analog circuits. These specific transistors were embedded in an inverter chain with a SET detection apparatus manufactured in a test vehicle processed in FDSOI28 technology. Radiation experiments were performed as well as circuit and TCAD simulations to deepen our understanding of this phenomenon. These SETs have implications for radiation-hardening-by-design that are discussed in this paper.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134568603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745672
{"title":"The RADECS 2019 Technical Program Committee","authors":"","doi":"10.1109/radecs47380.2019.9745672","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745672","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122371943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745687
F. Pintacuda, S. Massetti, A. Javanaien, M. Muschitiello, V. Cantarella
This paper report the SEE results measured on Mos-SiC, Mos-Si and SiC Mosfet. The goal of this study is to characterize SiC oxides gate as one of the key factors for rad-hard SiC MOSFET development.
{"title":"SEE Responses of Mos-SIC, Mos-si and Sic Mosfet","authors":"F. Pintacuda, S. Massetti, A. Javanaien, M. Muschitiello, V. Cantarella","doi":"10.1109/radecs47380.2019.9745687","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745687","url":null,"abstract":"This paper report the SEE results measured on Mos-SiC, Mos-Si and SiC Mosfet. The goal of this study is to characterize SiC oxides gate as one of the key factors for rad-hard SiC MOSFET development.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127726682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745704
L. Artola, S. Ducret, G. Hubert
This paper presents a total ionizing dose (TID) modeling approach based on experimental Cobalt60 irradiations of n-MOS and p-MOS transistors. The TID models were developed for the investigation of complementary metal oxide semiconductor (CMOS) gates performances used in a readout integrated circuit (ROIC) at cryogenic temperatures.
{"title":"Engineering TID modeling for the SEE and performances evaluations of integrated CMOS circuits at cryogenic temperatures","authors":"L. Artola, S. Ducret, G. Hubert","doi":"10.1109/radecs47380.2019.9745704","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745704","url":null,"abstract":"This paper presents a total ionizing dose (TID) modeling approach based on experimental Cobalt60 irradiations of n-MOS and p-MOS transistors. The TID models were developed for the investigation of complementary metal oxide semiconductor (CMOS) gates performances used in a readout integrated circuit (ROIC) at cryogenic temperatures.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121091766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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