Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745701
G. Bazzano, A. Ampollini, L. Blasi, F. Cardelli, E. Cisbani, C. De Angelis, S. Monache, A. Mastrandrea, F. Menichelli, P. Nenzi, M. Olivieri, G. Palmerini, L. Picardi, M. Piccinini, C. Ronsivalle, M. Sabatini, F. Vigli
This contribution describes the irradiation set-up for electronic and space components testing with pulsed 30 MeV proton beam of high instantaneous dose rate provided by the TOP-IMPLART linear accelerator at ENEA Frascati Research Centre.
{"title":"Dosimetric characterization of an irradiation set-up for electronic components testing at the TOP-IMPLART proton linear accelerator","authors":"G. Bazzano, A. Ampollini, L. Blasi, F. Cardelli, E. Cisbani, C. De Angelis, S. Monache, A. Mastrandrea, F. Menichelli, P. Nenzi, M. Olivieri, G. Palmerini, L. Picardi, M. Piccinini, C. Ronsivalle, M. Sabatini, F. Vigli","doi":"10.1109/radecs47380.2019.9745701","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745701","url":null,"abstract":"This contribution describes the irradiation set-up for electronic and space components testing with pulsed 30 MeV proton beam of high instantaneous dose rate provided by the TOP-IMPLART linear accelerator at ENEA Frascati Research Centre.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128468922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745652
Sergey L. Vorobiev, Oleg A. Bakhirko, L. Bakirov, P. Chubunov, V. Anashin, Alexandr E. Koziukov, Sergey A. Iakovlev
In this study we performed the radiation tests on the TPS3305-18DGN and MAX6755UKLD3+T voltage supervisors to characterize its resistance to heavy ion irradiation. The paper provides the test conditions, results of parametric and functional checks and tests during and after irradiation and estimation of samples behavior after they holding in SEL state.
{"title":"Voltage Supervisors Post Heavy Ion Irradiation Behavior After Holding in SEL","authors":"Sergey L. Vorobiev, Oleg A. Bakhirko, L. Bakirov, P. Chubunov, V. Anashin, Alexandr E. Koziukov, Sergey A. Iakovlev","doi":"10.1109/radecs47380.2019.9745652","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745652","url":null,"abstract":"In this study we performed the radiation tests on the TPS3305-18DGN and MAX6755UKLD3+T voltage supervisors to characterize its resistance to heavy ion irradiation. The paper provides the test conditions, results of parametric and functional checks and tests during and after irradiation and estimation of samples behavior after they holding in SEL state.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"283 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134098240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745685
Huiping Zhu, Lei Wang, Jingyuan Shi, Xin-nan Huang, Z. Zheng, Guodong Xiong, Bo Li, Q. Gao, Bin Yang, Jiajun Luo, Zhengsheng Han, Xinyu Liu
Sulfur vacancies introduced by proton irradiation in the MoS2 film cause the multilayer MoS2 to be decoupled, resulting in a indirect-to-direct bandgap transition. Unlike the irradiation-introduced interface states, sulfur vacancies can improve the performance of MoS2 FET devices.
{"title":"Impact of High-Energy Proton Irradiation on MoS2 Films and Its Field Effect Transistors","authors":"Huiping Zhu, Lei Wang, Jingyuan Shi, Xin-nan Huang, Z. Zheng, Guodong Xiong, Bo Li, Q. Gao, Bin Yang, Jiajun Luo, Zhengsheng Han, Xinyu Liu","doi":"10.1109/radecs47380.2019.9745685","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745685","url":null,"abstract":"Sulfur vacancies introduced by proton irradiation in the MoS<inf>2</inf> film cause the multilayer MoS<inf>2</inf> to be decoupled, resulting in a indirect-to-direct bandgap transition. Unlike the irradiation-introduced interface states, sulfur vacancies can improve the performance of MoS<inf>2</inf> FET devices.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134147897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745648
{"title":"The RADECS2019 Awards Committee","authors":"","doi":"10.1109/radecs47380.2019.9745648","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745648","url":null,"abstract":"","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128829544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745717
G. Piscopo, C. McAllister, G. Tsiligiannis, S. Danzeca, A. Masi
MicroSD Cards are a low-cost, simple and fast method to have a non-volatile memory on an embedded system. In this work several MicroSD Cards have been tested to measure their performances and life time under proton induced radiation. The MicroSD cards have been tested in order to verify their suitability to be used in a particle accelerator such as the Large Hadron Collider (LHC) at CERN. The Single Event Effects (SEE) and Total Ionizing Dose (TID) effects of each MicroSD Card will be presented.
{"title":"Radiation characterization of COTS MicroSD Memories for CERN applications","authors":"G. Piscopo, C. McAllister, G. Tsiligiannis, S. Danzeca, A. Masi","doi":"10.1109/radecs47380.2019.9745717","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745717","url":null,"abstract":"MicroSD Cards are a low-cost, simple and fast method to have a non-volatile memory on an embedded system. In this work several MicroSD Cards have been tested to measure their performances and life time under proton induced radiation. The MicroSD cards have been tested in order to verify their suitability to be used in a particle accelerator such as the Large Hadron Collider (LHC) at CERN. The Single Event Effects (SEE) and Total Ionizing Dose (TID) effects of each MicroSD Card will be presented.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117231881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745729
J. Raoult, S. Jarrix, L. Chusseau, T. Maraine, J. Boch
High frequency front-ends are X-ray irradiated in biased and unbiased configurations. The high-frequency nonlinear response of the integrated PAs and LNAs to harmonic and two-tone excitations are studied. The impact of the bias configuration with respect to irradiation is highlighted. Considering high frequency characterization, measurements of the reflected IM3 tone at the input as well as the power response to a single tone excitement are implemented. They are shown interesting tools for predicting dysfunctionalities in high frequency circuits with respect to TID.
{"title":"Highlight of Total Ionizing Dose Effects on RF Front-ends by means of Microwave Nonlinear Characterization","authors":"J. Raoult, S. Jarrix, L. Chusseau, T. Maraine, J. Boch","doi":"10.1109/radecs47380.2019.9745729","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745729","url":null,"abstract":"High frequency front-ends are X-ray irradiated in biased and unbiased configurations. The high-frequency nonlinear response of the integrated PAs and LNAs to harmonic and two-tone excitations are studied. The impact of the bias configuration with respect to irradiation is highlighted. Considering high frequency characterization, measurements of the reflected IM3 tone at the input as well as the power response to a single tone excitement are implemented. They are shown interesting tools for predicting dysfunctionalities in high frequency circuits with respect to TID.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125692925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745666
A. Varotsou, P. Pourrouquet, R. Benacquista, R. Mangeret, Lee Pater, G. Santin, Hugh Evans, D. Standarovski, R. Ecoffet
Very often the satellite platform geometry as well as the equipment one are confidential and cannot be shared between partners in a space project. In order to perform radiation analysis at electronic component level, the 6-faces method is commonly used for geometry information exchange between primes and subcontractors. However, this method is known to be quite conservative. In the frame of the ESA funded project GTREFF the margins induced by the use of the 6-faces method were identified and analyzed for a typical geostationary mission. Following this, a new method was proposed and studied in the frame of a CNES funded project, with promising results.
{"title":"Six-Faces Induced Margins on Dose Calculation and Proposal for a New Satellite Geometry Exchange method","authors":"A. Varotsou, P. Pourrouquet, R. Benacquista, R. Mangeret, Lee Pater, G. Santin, Hugh Evans, D. Standarovski, R. Ecoffet","doi":"10.1109/radecs47380.2019.9745666","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745666","url":null,"abstract":"Very often the satellite platform geometry as well as the equipment one are confidential and cannot be shared between partners in a space project. In order to perform radiation analysis at electronic component level, the 6-faces method is commonly used for geometry information exchange between primes and subcontractors. However, this method is known to be quite conservative. In the frame of the ESA funded project GTREFF the margins induced by the use of the 6-faces method were identified and analyzed for a typical geostationary mission. Following this, a new method was proposed and studied in the frame of a CNES funded project, with promising results.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131917849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745653
A. Privat, H. Barnaby, B. Tolleson, K. Muthuseenu, P. Adell
A temperature-dependent analytical model for total-ionizing-dose-induced excess base current in BJTs is proposed. Model captures base current evolution with temperature on irradiated parts. In this work, BJTs are irradiated at room temperature. Base currents are obtained and the concentrations of oxide defects created during irradiation are calculated. Both base current and defect densities resulting from room temperature irradiations are used as inputs to SPICE simulations and the analytical model. Experimental data obtained from measurements at both low and high temperatures on parts irradiated at room temperature are shown to compare well to the simulation results and analytical model over a range of temperatures.
{"title":"Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure","authors":"A. Privat, H. Barnaby, B. Tolleson, K. Muthuseenu, P. Adell","doi":"10.1109/radecs47380.2019.9745653","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745653","url":null,"abstract":"A temperature-dependent analytical model for total-ionizing-dose-induced excess base current in BJTs is proposed. Model captures base current evolution with temperature on irradiated parts. In this work, BJTs are irradiated at room temperature. Base currents are obtained and the concentrations of oxide defects created during irradiation are calculated. Both base current and defect densities resulting from room temperature irradiations are used as inputs to SPICE simulations and the analytical model. Experimental data obtained from measurements at both low and high temperatures on parts irradiated at room temperature are shown to compare well to the simulation results and analytical model over a range of temperatures.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130592664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745688
G. Rodrigues, Adria Barros, Israel C. Lopes, V. Pouget, A. Bosio, F. Kastensmidt
This paper presents a parallel error detection method evaluated using laser fault injection on a dual-core ARM processor. It exploits approximation to improve performance. Results are satisfactory, especially with algorithms that are not memory-intensive.
{"title":"An Approximate Error-Detection Technique for Multi-Core Real-Time Systems","authors":"G. Rodrigues, Adria Barros, Israel C. Lopes, V. Pouget, A. Bosio, F. Kastensmidt","doi":"10.1109/radecs47380.2019.9745688","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745688","url":null,"abstract":"This paper presents a parallel error detection method evaluated using laser fault injection on a dual-core ARM processor. It exploits approximation to improve performance. Results are satisfactory, especially with algorithms that are not memory-intensive.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130538035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-01DOI: 10.1109/radecs47380.2019.9745662
G. Augustin, M. Mauguet, N. Andrianjohany, N. Chatry, F. Bezerra, E. Capria, M. Sander, K. Voss
This work is a contribution to the use of alternative SEE test methods. We first report collected charge measurements and simulations in a p-i-n photodiode. The main purpose was to evaluate parameters leading to the correlation between heavy ion broadbeam and microbeam, pulsed X-rays and laser pulses. This study also relies on coupled and analytical simulation to further understand the physical phenomena involved. SEL current shape acquired on a CMOS ASIC were also analyzed and confirm the correlation of these test methods at the temporal scale. These results were then used to study SEU bursts in an SRAM with pulsed X-rays and heavy ions.
{"title":"Cross-Calibration of Various SEE Test Methods Including Pulsed X-rays and Application to SEL and SEU","authors":"G. Augustin, M. Mauguet, N. Andrianjohany, N. Chatry, F. Bezerra, E. Capria, M. Sander, K. Voss","doi":"10.1109/radecs47380.2019.9745662","DOIUrl":"https://doi.org/10.1109/radecs47380.2019.9745662","url":null,"abstract":"This work is a contribution to the use of alternative SEE test methods. We first report collected charge measurements and simulations in a p-i-n photodiode. The main purpose was to evaluate parameters leading to the correlation between heavy ion broadbeam and microbeam, pulsed X-rays and laser pulses. This study also relies on coupled and analytical simulation to further understand the physical phenomena involved. SEL current shape acquired on a CMOS ASIC were also analyzed and confirm the correlation of these test methods at the temporal scale. These results were then used to study SEU bursts in an SRAM with pulsed X-rays and heavy ions.","PeriodicalId":269018,"journal":{"name":"2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115079327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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