Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362951
R. McPartland, J. T. Nelson, W. R. Huber
An n-channel 64K dynamic RAM has been designed having an alpha particle induced soft error rate near one soft error per 107 device hours (100 FITS). Primary design considerations affecting the soft error rate are effective cell charge, signal degrading noise, sense amplifier to column impedance, polysilicon column layout and sense amplifier layout. Cell, column and sense amplifier alpha particle induced soft errors have been simulated using SPICE. Three classifications of sense amplifier soft errors have been illustrated. Two can be nearly eliminated by adequate signal, the other cannot and is strongly influenced by the sense amplifier to column impedance. Predictions by simulation have been confirmed by accelerated measurements of alpha particle induced soft error rates.
{"title":"Alpha-Particle-Induced Soft Errors and 64K Dynamic RAM Design Interaction","authors":"R. McPartland, J. T. Nelson, W. R. Huber","doi":"10.1109/IRPS.1980.362951","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362951","url":null,"abstract":"An n-channel 64K dynamic RAM has been designed having an alpha particle induced soft error rate near one soft error per 107 device hours (100 FITS). Primary design considerations affecting the soft error rate are effective cell charge, signal degrading noise, sense amplifier to column impedance, polysilicon column layout and sense amplifier layout. Cell, column and sense amplifier alpha particle induced soft errors have been simulated using SPICE. Three classifications of sense amplifier soft errors have been illustrated. Two can be nearly eliminated by adequate signal, the other cannot and is strongly influenced by the sense amplifier to column impedance. Predictions by simulation have been confirmed by accelerated measurements of alpha particle induced soft error rates.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114597462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362953
B. Masters
The zinc sulfide scintillation counter employed at IBM for low-level alpha flux monitoring of device and packaging materials is described. This counter provides almost 100% counting efficiency for alpha particles of 1.5MeV or greater energy emitted from the surface of planar samples up to 130 cm2 in area, and exhibits a sea level background count rate on the order of 0.005 counts/cm2-hr. The contributions of electrical noise, cosmic radiation, and radioactive contamination to this background count rate have been studied experimentally. For near sea level operation, only the cosmic ray and radioactivity contributions are found to be significant. At 50°N geomagnetic latitude, the sea level contribution from cosmic ray interactions appears to be about 0.003 counts/cm2-hr. This component is strongly dependent upon altitude, increasing to about 0.1 counts/cm2-hr. at an altitude of 4.36 km. In the presence of very heavy external shielding, total backgrounds on the order of 0.002 counts/cm2-hr. may be realized, and this residual is attributed primarily to naturally-occurring radioactive contaminants which are present in the construction materials of the detector.
{"title":"Experimental Studies of ZnS Alpha Particle Counters and Methods for Minimizing Detector Background","authors":"B. Masters","doi":"10.1109/IRPS.1980.362953","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362953","url":null,"abstract":"The zinc sulfide scintillation counter employed at IBM for low-level alpha flux monitoring of device and packaging materials is described. This counter provides almost 100% counting efficiency for alpha particles of 1.5MeV or greater energy emitted from the surface of planar samples up to 130 cm2 in area, and exhibits a sea level background count rate on the order of 0.005 counts/cm2-hr. The contributions of electrical noise, cosmic radiation, and radioactive contamination to this background count rate have been studied experimentally. For near sea level operation, only the cosmic ray and radioactivity contributions are found to be significant. At 50°N geomagnetic latitude, the sea level contribution from cosmic ray interactions appears to be about 0.003 counts/cm2-hr. This component is strongly dependent upon altitude, increasing to about 0.1 counts/cm2-hr. at an altitude of 4.36 km. In the presence of very heavy external shielding, total backgrounds on the order of 0.002 counts/cm2-hr. may be realized, and this residual is attributed primarily to naturally-occurring radioactive contaminants which are present in the construction materials of the detector.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117140886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362914
J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter
Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.
{"title":"SEM Techniques for the Analysis of Memory Circuits","authors":"J. R. Beall, D. Wilson, W. Echols, LT. M. J. Walter","doi":"10.1109/IRPS.1980.362914","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362914","url":null,"abstract":"Seven semiconductor memory device types were used to evaluate the application of the Scanning Electron Microscope (SEM) to LSI -circuit. anal'ysis. The objective was to develop the necessary SEM methodology for the characterization and failure analysis of complex circuits. The SEM imaging capabilities were evaluated to identify practical methods and limitations for circuit characterization and for isolation of circuit failures.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"436 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126116293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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