Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362909
A. Adolt, D. O. Melroy
Reverse bias testing of Ta thin film capacitors under accelerated conditions showed higher failure rates at 45 and 65°C than at 85°C. TWo distinct failure modes occurred: area dependent point failures and non-area dependent failures along the counterelectrode/dielectric edge. The work reported here shows that the edge failures are moisture dent, while the point failures are not. The product limit method of statistical analysis was used to separate the two failure modes. The edge breakdowns occur only in the presence of moisture and the rate at which they occur is a function of the humidity level present. Low voltage leakage current studies indicate that there is a threshold bias value below which there is no observable moisture effect.
{"title":"Humidity Effects on Reverse Bias Testing of Ta Film Capacitors","authors":"A. Adolt, D. O. Melroy","doi":"10.1109/IRPS.1980.362909","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362909","url":null,"abstract":"Reverse bias testing of Ta thin film capacitors under accelerated conditions showed higher failure rates at 45 and 65°C than at 85°C. TWo distinct failure modes occurred: area dependent point failures and non-area dependent failures along the counterelectrode/dielectric edge. The work reported here shows that the edge failures are moisture dent, while the point failures are not. The product limit method of statistical analysis was used to separate the two failure modes. The edge breakdowns occur only in the presence of moisture and the rate at which they occur is a function of the humidity level present. Low voltage leakage current studies indicate that there is a threshold bias value below which there is no observable moisture effect.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"166 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121602815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362958
D. R. Kitchen
The purpose of this investigation is to characterize the reactions occurring at the die/substrate interface and the causes of void formation and nonadherence observed in the die attach process. Using classical thermodynamics and a Differential Scanning Calorimeter, this study will clearly show that the gold-silicon eutectic is an undesirable alloy for brazing a circuit die to a gold-plated substrate. Furthermore, the study establishes a ternary gold-silicon-tin (¿) alloy as a more appropriate braze alloy. Experimental evidence is presented which demonstrates that the improved alloy has a melting point of 274°C, but can be varied from 196°C to 1410°C, and consistently wets the surface of a gold-plated substrate. This proposed ternary alloy was tested by brazing eleven separate dies to substrates at 300°C ± 10°C. A subsequent x-ray analysis of the brazed samples revealed no voids in the parting line between the die and substrate. Moreover, in order to test the strength of the bond between the die and substrate, the brazed combinations were subjected to the standard die-shear test performed according to MIL-STD-883B, 31 August 1977.5 In each case, the samples tested, exceeded a 1000 gram load, passing the MIL-SPEC for the given die area. Finally, testing the braze alloy on a production line indicates that lower brazing temperatures are used in the die attach process and that adherent bonds form between the die and substrate.
{"title":"Physics of Die Attach Interfaces","authors":"D. R. Kitchen","doi":"10.1109/IRPS.1980.362958","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362958","url":null,"abstract":"The purpose of this investigation is to characterize the reactions occurring at the die/substrate interface and the causes of void formation and nonadherence observed in the die attach process. Using classical thermodynamics and a Differential Scanning Calorimeter, this study will clearly show that the gold-silicon eutectic is an undesirable alloy for brazing a circuit die to a gold-plated substrate. Furthermore, the study establishes a ternary gold-silicon-tin (¿) alloy as a more appropriate braze alloy. Experimental evidence is presented which demonstrates that the improved alloy has a melting point of 274°C, but can be varied from 196°C to 1410°C, and consistently wets the surface of a gold-plated substrate. This proposed ternary alloy was tested by brazing eleven separate dies to substrates at 300°C ± 10°C. A subsequent x-ray analysis of the brazed samples revealed no voids in the parting line between the die and substrate. Moreover, in order to test the strength of the bond between the die and substrate, the brazed combinations were subjected to the standard die-shear test performed according to MIL-STD-883B, 31 August 1977.5 In each case, the samples tested, exceeded a 1000 gram load, passing the MIL-SPEC for the given die area. Finally, testing the braze alloy on a production line indicates that lower brazing temperatures are used in the die attach process and that adherent bonds form between the die and substrate.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122046280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362927
G. Riga
The problem of analyzing a material is considered in its generalities. The principal characteristic of a material, some of the analytical techniques used by the semiconductor industry, and the major factors affecting an analysis are briefly reviewed. Examples of the parameters that can be measured to characterize a metallic film, a semiconductor crystal, and a dielectric thin layer are reported.
{"title":"Materials Analysis, An Overview","authors":"G. Riga","doi":"10.1109/IRPS.1980.362927","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362927","url":null,"abstract":"The problem of analyzing a material is considered in its generalities. The principal characteristic of a material, some of the analytical techniques used by the semiconductor industry, and the major factors affecting an analysis are briefly reviewed. Examples of the parameters that can be measured to characterize a metallic film, a semiconductor crystal, and a dielectric thin layer are reported.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126498634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362923
W. J. Byrne
The effectiveness and limitations of the methods for plastic removal, one using sulfuric acid at 230°C, another using nitric acid at 70°C are contrasted with a third using mechanical means at high temperature.
用230℃的硫酸、70℃的硝酸和高温下的机械方法对塑料去除方法的有效性和局限性进行了对比。
{"title":"Three Decapsulation Methods for Epoxy Novalac Type Packages","authors":"W. J. Byrne","doi":"10.1109/IRPS.1980.362923","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362923","url":null,"abstract":"The effectiveness and limitations of the methods for plastic removal, one using sulfuric acid at 230°C, another using nitric acid at 70°C are contrasted with a third using mechanical means at high temperature.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127457846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362922
R. A. Schwartz
This report describes the role of the curve tracer in the failure-analysis process, some text fixtures used to supplement the standard curve tracer, and some case histories of application of the curve tracer.
{"title":"Electrical Testing in Failure Analysis - The Role of the Curve Tracer","authors":"R. A. Schwartz","doi":"10.1109/IRPS.1980.362922","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362922","url":null,"abstract":"This report describes the role of the curve tracer in the failure-analysis process, some text fixtures used to supplement the standard curve tracer, and some case histories of application of the curve tracer.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134365407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362936
M. Polcari, J. Lloyd, S. Cvikevich
Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.
{"title":"Electromigration Failure in Hieavily Doped Polycrystalline Silicon","authors":"M. Polcari, J. Lloyd, S. Cvikevich","doi":"10.1109/IRPS.1980.362936","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362936","url":null,"abstract":"Electromigration induced failures have been observed in both n & p doped polycrystalline silicon conductors. The location of the failure sites was found to depend upon the sign of the charge carrier. Migration of the dopant was identified as the failure mechanism.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"7 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113955661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362957
C. E. Hoge, Simon Thomas
Die bond reliability using gold-silicon eutectic preforms was investigated and related to poor wetting of the integrated circuit and substrate by the alloy melt. Using a Scanning Auger Microprobe (SAM), surface and interfacial structures were analyzed and the conditions for bonding or non-bonding outlined.
{"title":"Some Considerations of the Gold-Silicon Die Bond Based on Surface Chemical Analysis","authors":"C. E. Hoge, Simon Thomas","doi":"10.1109/IRPS.1980.362957","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362957","url":null,"abstract":"Die bond reliability using gold-silicon eutectic preforms was investigated and related to poor wetting of the integrated circuit and substrate by the alloy melt. Using a Scanning Auger Microprobe (SAM), surface and interfacial structures were analyzed and the conditions for bonding or non-bonding outlined.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"218 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126110537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362955
R. Comizzoli, L. White, W. Kern, G. Schnable, D. Peters, C. Tracy, R. D. Vibronek
Corrosion rates and corrosion current of aluminum line patterns passivated with PSG and silicon nitride were measured. Relationships between corrosion and various parameters including temperature, relative humidity, aluminum deposition method, alloying treatment, passivation layer type and defect density and contaminants are reported. A surface treatment which lowers corrosion currents is also discussed.
{"title":"Corrosion of Aluminum IC Metaillization with Defective Surface Passivation Layer","authors":"R. Comizzoli, L. White, W. Kern, G. Schnable, D. Peters, C. Tracy, R. D. Vibronek","doi":"10.1109/IRPS.1980.362955","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362955","url":null,"abstract":"Corrosion rates and corrosion current of aluminum line patterns passivated with PSG and silicon nitride were measured. Relationships between corrosion and various parameters including temperature, relative humidity, aluminum deposition method, alloying treatment, passivation layer type and defect density and contaminants are reported. A surface treatment which lowers corrosion currents is also discussed.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127473284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362931
P. F. Lindquist
A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.
{"title":"A New Model for Light Output Degradation of Direct Band Gap Emitters","authors":"P. F. Lindquist","doi":"10.1109/IRPS.1980.362931","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362931","url":null,"abstract":"A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126814547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362915
W. J. Tabor, R. Zappulla, A. W. Anderson
Bubble devices are being manufactured by Western Electric Company, as well as a number of other companies, and have been used in the Bell System since 1978. Accelerated aging tests which include temperature-humidity-voltage bias exposure, temperature cycling, vibration and shock, and electromigration degradation of the Al-4.5% Cu conductors have been performed since the earliest bubble device was constructed. Many of the failure modes that occurred in the early designs have been eliminated or reduced in severity by changes of materials or design. Copper corrosion on the fiberglass-epoxy circuit board has been greatly reduced by the use of an improved epoxy casting resin, magnet cracking has been totally eliminated by spring mounting the magnets rather than by cementing them in place, bias field variation after temperature cycling has been greatly reduced by proper magnet design, and vibration and shock problems have been eliminated by the use of mounting studs on the external shield. Electromigration studies show that the Al-4.5% Cu alloys, electron-beam-evaporated on garnet substrates, will withstand current densities of 1.5(10)7 amp/cm2 for a good lifetirme when the duty cycle is low (~ 1.5%). Results of the accelerated tests on the most recent design conclude that the bubble device is comparable to Western Electric plastic-encapsulated semiconductor integrated circuits.
{"title":"Accelerated Aging Tests of Bubble Devices","authors":"W. J. Tabor, R. Zappulla, A. W. Anderson","doi":"10.1109/IRPS.1980.362915","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362915","url":null,"abstract":"Bubble devices are being manufactured by Western Electric Company, as well as a number of other companies, and have been used in the Bell System since 1978. Accelerated aging tests which include temperature-humidity-voltage bias exposure, temperature cycling, vibration and shock, and electromigration degradation of the Al-4.5% Cu conductors have been performed since the earliest bubble device was constructed. Many of the failure modes that occurred in the early designs have been eliminated or reduced in severity by changes of materials or design. Copper corrosion on the fiberglass-epoxy circuit board has been greatly reduced by the use of an improved epoxy casting resin, magnet cracking has been totally eliminated by spring mounting the magnets rather than by cementing them in place, bias field variation after temperature cycling has been greatly reduced by proper magnet design, and vibration and shock problems have been eliminated by the use of mounting studs on the external shield. Electromigration studies show that the Al-4.5% Cu alloys, electron-beam-evaporated on garnet substrates, will withstand current densities of 1.5(10)7 amp/cm2 for a good lifetirme when the duty cycle is low (~ 1.5%). Results of the accelerated tests on the most recent design conclude that the bubble device is comparable to Western Electric plastic-encapsulated semiconductor integrated circuits.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114503757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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