Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362905
R. Vasofsky, R. Lowry
In this investigation the moisture evolution properties of vitreous sealing glasses were evaluated to assess process approaches for producing hermetic CERDIP packages with greatly reduced levels of encapsulated moisture. Four types of commercially-glazed glasses of the KC-series, as supplied on CERDIP lids, were heated in vacuum at 430°C for 3h. During this period the identity, quantity, and evolution rate of gaseous components were measured. In parallel experiments the moisture contents of CERDIP packages sealed with KC-1 and KC-1M glasses were measured for unbaged parts and for parts preseal baked at 150°C for 2h. The outgassing studies show that the quantity and rate of moisture evolution from KC-1 and KC-1M sealing glasses depend in part on the way the glass was initially glazed on the alumina lid: the quantity of water outgassed from glass glazed in the "standard manner" is greater than the amount evolved-from the glass glazed using the "super dry" process. However, the quantity of water outgassed during the first 10 min of heating at 430°C from all 4 sample types, KC-1 (standard), KC-1 (super-dry), KC-1M (standard) and KC-1M (super dry) was sufficiently high to indicate that if sealing occurred during this initial 10 min period the moisture content inside the sealed cavity could exceed 5000 ppmv. Hence a preseal bake of vitreous-glazed package piece parts can contribute substantially to producing dry cavities. The most important factor in determining duration of a preseal bake is rate of-moisture evolution from the glass.
{"title":"Moisture Evolution from Sealing Glasses: Dry CERDIP Packages","authors":"R. Vasofsky, R. Lowry","doi":"10.1109/IRPS.1980.362905","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362905","url":null,"abstract":"In this investigation the moisture evolution properties of vitreous sealing glasses were evaluated to assess process approaches for producing hermetic CERDIP packages with greatly reduced levels of encapsulated moisture. Four types of commercially-glazed glasses of the KC-series, as supplied on CERDIP lids, were heated in vacuum at 430°C for 3h. During this period the identity, quantity, and evolution rate of gaseous components were measured. In parallel experiments the moisture contents of CERDIP packages sealed with KC-1 and KC-1M glasses were measured for unbaged parts and for parts preseal baked at 150°C for 2h. The outgassing studies show that the quantity and rate of moisture evolution from KC-1 and KC-1M sealing glasses depend in part on the way the glass was initially glazed on the alumina lid: the quantity of water outgassed from glass glazed in the \"standard manner\" is greater than the amount evolved-from the glass glazed using the \"super dry\" process. However, the quantity of water outgassed during the first 10 min of heating at 430°C from all 4 sample types, KC-1 (standard), KC-1 (super-dry), KC-1M (standard) and KC-1M (super dry) was sufficiently high to indicate that if sealing occurred during this initial 10 min period the moisture content inside the sealed cavity could exceed 5000 ppmv. Hence a preseal bake of vitreous-glazed package piece parts can contribute substantially to producing dry cavities. The most important factor in determining duration of a preseal bake is rate of-moisture evolution from the glass.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114675848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362943
J. N. Ramsey
{"title":"Small Area Raman Photoluminescence and Cathodoluminescence as Complementary Analytical Techniques for Electronic Materials","authors":"J. N. Ramsey","doi":"10.1109/IRPS.1980.362943","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362943","url":null,"abstract":"","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122867662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362947
R. E. Shiner, J. Caywood, B. Euzent
Electrically programmable read only memories (EPROMs) which are eraseable by ultraviolet irradiation long have been used in the development of microprocessor based systems and have more recently found wide applications in systems shipped into the field where the ability to correct errors or easily provide field upgrade of the system software has proven appealing to systems mantufacturers. In these latter applications it is essential to the integrity of the system that the EPROMs retain their data over tens of years under operating conditions.
{"title":"Data Retention in EPROMS","authors":"R. E. Shiner, J. Caywood, B. Euzent","doi":"10.1109/IRPS.1980.362947","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362947","url":null,"abstract":"Electrically programmable read only memories (EPROMs) which are eraseable by ultraviolet irradiation long have been used in the development of microprocessor based systems and have more recently found wide applications in systems shipped into the field where the ability to correct errors or easily provide field upgrade of the system software has proven appealing to systems mantufacturers. In these latter applications it is essential to the integrity of the system that the EPROMs retain their data over tens of years under operating conditions.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124123343","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362945
L. C. Wagner
Silicon thermal printing devices present, very real challenges to both the failure analyst and reliability engineer. These devices are unusual in several ways. They are intended for operation of the active areas at temperatures above those normally experienced silicon devices. Thermal conductivity plays an inordinately significant role in the operation and particularly the lifetime of the device. This fact makes analysis and control of the materials thermally surrounding electronically active areas as important as the active areas themselves. The typical structurel is illustrated in figure 1 which shows the individual printing element or mesa which is used as a heating element employing current flow through the bulk resistivity of the mesa to generate heat. The mesa heat is then dissipated through the paper and through the epoxy tb the ceramic substrate. The mesas may be arranged in matrices or lines as illustrated in figure 2. In addition to the thermal and electrical characteristics of the device, device lifetime is ultimately limited by mechanical wear, i.e. abrasion against the paper. Thus the devices cannot be viewed in an electronic vacuum but must be viewed as a thermo-mechanical electronic system which puts an added stress on normal reliability and failure analysis functions.
{"title":"Failure Analysis and Reliability of Thermal Printing Devices","authors":"L. C. Wagner","doi":"10.1109/IRPS.1980.362945","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362945","url":null,"abstract":"Silicon thermal printing devices present, very real challenges to both the failure analyst and reliability engineer. These devices are unusual in several ways. They are intended for operation of the active areas at temperatures above those normally experienced silicon devices. Thermal conductivity plays an inordinately significant role in the operation and particularly the lifetime of the device. This fact makes analysis and control of the materials thermally surrounding electronically active areas as important as the active areas themselves. The typical structurel is illustrated in figure 1 which shows the individual printing element or mesa which is used as a heating element employing current flow through the bulk resistivity of the mesa to generate heat. The mesa heat is then dissipated through the paper and through the epoxy tb the ceramic substrate. The mesas may be arranged in matrices or lines as illustrated in figure 2. In addition to the thermal and electrical characteristics of the device, device lifetime is ultimately limited by mechanical wear, i.e. abrasion against the paper. Thus the devices cannot be viewed in an electronic vacuum but must be viewed as a thermo-mechanical electronic system which puts an added stress on normal reliability and failure analysis functions.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126546794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362940
Ken Sato, Y. Ogata, K. Ohno, H. Ikeo
Ceramic capacitors failed insulation resistance testing at dc voltages far below their rated voltages. Using improved techniques of microanalysis and electrochemical methods, we found that failures resulted from electromigration of electrode materials through a small space in dielectrics filled with a solution containing Cl ions. This mechanism could explain electrical behaviours of failed capacitors.
{"title":"Mechanism of Ceramic Capacitor Leakage Failures due to Low DC Stress","authors":"Ken Sato, Y. Ogata, K. Ohno, H. Ikeo","doi":"10.1109/IRPS.1980.362940","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362940","url":null,"abstract":"Ceramic capacitors failed insulation resistance testing at dc voltages far below their rated voltages. Using improved techniques of microanalysis and electrochemical methods, we found that failures resulted from electromigration of electrode materials through a small space in dielectrics filled with a solution containing Cl ions. This mechanism could explain electrical behaviours of failed capacitors.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121632055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362928
A. S. Jordan, J. Irvin, W. Schlosser
Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.
{"title":"A Large Scale Reliability Study of Burnout Failure in GaAs Power FETs","authors":"A. S. Jordan, J. Irvin, W. Schlosser","doi":"10.1109/IRPS.1980.362928","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362928","url":null,"abstract":"Burnout can be the dominant failure mode in GaAs power FETs. Since this is a process without electrical precursors, special experimental and statistical treatment appropriate to censored data has to be employed. The resulting failure distribution is log-normal and depending on the operating conditions a maximum failure rate between 400 and 4500 FITs is projected.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121930308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362930
A. Christou, Y. Anand
GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.
{"title":"Gaas Mixer Diode Burnout Mechanisms at 36-94 GHz","authors":"A. Christou, Y. Anand","doi":"10.1109/IRPS.1980.362930","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362930","url":null,"abstract":"GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126492411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362933
A. K. Sinha, D. Fraser, S. Murarka
Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.
{"title":"Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure","authors":"A. K. Sinha, D. Fraser, S. Murarka","doi":"10.1109/IRPS.1980.362933","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362933","url":null,"abstract":"Results are presented on the generic reliability of the TaSi2/n+ poly-Si gate structure which has a stable sheet resistance of ~2 ohm/sq and which retrofits into the conventional n-channel Si-gate process sequence. The MOS and IGFET parameters are well-behaved, i.e., determined by the n+ poly-Si layer of the composite. The static and dynamic bias-temperature stabilities are excellent for the presently employed sequence of process steps. Certain process and structure limitations do exist, and these have been defined.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132365921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362956
D. W. Dycus
Plastic molding compounds show two major moisture uptake rates, one fast and one slow. The fast rate represents the moisture uptake mechanism that is responsible for moisture dependent failures in epoxy novolac plastics. It is felt that the fast rate represents transport through the organic epoxy matrix by hydrogen bonding. Silicone epoxy shows a much slower rate of moisture uptake after an initial induction period. The moisture dependent failure is therefore controlled by the slower rate in silicone epoxy. The slower rate is thought to be uptake by the silica filler matrix.
{"title":"Moisture Uptake and Release by Plastic Molding Compoundsits Relationship to System Life and Failure Mode","authors":"D. W. Dycus","doi":"10.1109/IRPS.1980.362956","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362956","url":null,"abstract":"Plastic molding compounds show two major moisture uptake rates, one fast and one slow. The fast rate represents the moisture uptake mechanism that is responsible for moisture dependent failures in epoxy novolac plastics. It is felt that the fast rate represents transport through the organic epoxy matrix by hydrogen bonding. Silicone epoxy shows a much slower rate of moisture uptake after an initial induction period. The moisture dependent failure is therefore controlled by the slower rate in silicone epoxy. The slower rate is thought to be uptake by the silica filler matrix.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132135000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：