Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362911
C. C. Yu
The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.
{"title":"Degradation Model for Device Reliability","authors":"C. C. Yu","doi":"10.1109/IRPS.1980.362911","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362911","url":null,"abstract":"The model assumes that, under a constant or cyclic stress, device degradation rate is proportional to the existing degradation. The proportionality constant is a positively distributed random variable. The distribution of the amount of degradation tends to be asymptotically lognormal. The general form of the life distribution is derived. Application of this model has been made in analyzing degradation data in thermal resistance, diode leakage, and transistor gain.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"156 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114528556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362906
J. B. Finn, V. Fong
Determination of the internal water vapor of a Cerdip package can be conveniently and inexpensively performed by an Al2O3 chip type sensor of recent design. Comparisons with an earlier design are made. Data of field trials by several IC manufacturers from common chip lots are shown. for the purpose of generating a broad range of moisture levels, both vitreous and non-vitreous sealing glass types were studied along with the effect of desiccants, lint contamination of the sealing glass, and the leak detection capability of the sensor. The relationship of sensor measured values with those of mass spectrometry is shown.
{"title":"Recent Advances in Al2O3 \"In-Situ\" Moisture Monitoring Chips for Cerdip Package Applications","authors":"J. B. Finn, V. Fong","doi":"10.1109/IRPS.1980.362906","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362906","url":null,"abstract":"Determination of the internal water vapor of a Cerdip package can be conveniently and inexpensively performed by an Al2O3 chip type sensor of recent design. Comparisons with an earlier design are made. Data of field trials by several IC manufacturers from common chip lots are shown. for the purpose of generating a broad range of moisture levels, both vitreous and non-vitreous sealing glass types were studied along with the effect of desiccants, lint contamination of the sealing glass, and the leak detection capability of the sensor. The relationship of sensor measured values with those of mass spectrometry is shown.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131398887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362941
D. Allen, B. Bertiger, W. Daily
A latent failure mechanism for surface acoustic wave components which utilize lithium niobate as the piezoelectric has been, identified. This failure mechanism involves the growth of aluminum oxide on the thin film aluminum metal which constitutes the interdigitated electrical/mechanical transducer structure. This failure mechanism has been successfully eliminated in high-reliability components by making certain that a necessary condition for the growth of the oxide does not exist. The necessary condition is the existence of a dc electric field within the transducer structure. The exact conditions necessary for the initiation of the oxide growth have not, as yet, been determined. It is known that electric field values of the order of 104 volts per centimeter with ambient temperature of 125°C for 168 hours can cause the growth. The effect of the growth is to reduce the effective electroacoustical coupling factor which results in the component exhibiting added insertion loss and a skewing of pass band RF characteristics as the growth progresses.
{"title":"A Latent Failure Mechanism for Surface Acoustic Wave Components Utilizing Lithium Niobate","authors":"D. Allen, B. Bertiger, W. Daily","doi":"10.1109/IRPS.1980.362941","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362941","url":null,"abstract":"A latent failure mechanism for surface acoustic wave components which utilize lithium niobate as the piezoelectric has been, identified. This failure mechanism involves the growth of aluminum oxide on the thin film aluminum metal which constitutes the interdigitated electrical/mechanical transducer structure. This failure mechanism has been successfully eliminated in high-reliability components by making certain that a necessary condition for the growth of the oxide does not exist. The necessary condition is the existence of a dc electric field within the transducer structure. The exact conditions necessary for the initiation of the oxide growth have not, as yet, been determined. It is known that electric field values of the order of 104 volts per centimeter with ambient temperature of 125°C for 168 hours can cause the growth. The effect of the growth is to reduce the effective electroacoustical coupling factor which results in the component exhibiting added insertion loss and a skewing of pass band RF characteristics as the growth progresses.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"253 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131460720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362950
J. Peeples, Thomas J. Every
An extremely alpha-radiation sensitive test population of 16K RAMs was subjected to a test matrix designed to determine the actual influence of major system operating parameters on dynamic RAM alpha particle induced soft error rates. Two megabytes of memory (1024 each 16K RAMs) were exercised in a specially developed system capable of distinguishing between and logging all types of error/failure events. In excess of 4 million device hours were accumulated in the course of this experiment. The alpha particle induced soft error rate dependence on VDD, VBB, refresh interval, and system ambient temperature was investigated. A second population was subjected to tests designed to yield insight to the soft error rate behavior over the life of the system. A general description of the test system and a discussion of the philosophical aspects of error/failure event segregation is included. Parametric guidelines are developed and a microcomputer system example is presented to illustrate how these guidelines can be followed to minimize system level alpha induced soft error rates.
{"title":"Parametric Influences on System Soft Error Rates","authors":"J. Peeples, Thomas J. Every","doi":"10.1109/IRPS.1980.362950","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362950","url":null,"abstract":"An extremely alpha-radiation sensitive test population of 16K RAMs was subjected to a test matrix designed to determine the actual influence of major system operating parameters on dynamic RAM alpha particle induced soft error rates. Two megabytes of memory (1024 each 16K RAMs) were exercised in a specially developed system capable of distinguishing between and logging all types of error/failure events. In excess of 4 million device hours were accumulated in the course of this experiment. The alpha particle induced soft error rate dependence on VDD, VBB, refresh interval, and system ambient temperature was investigated. A second population was subjected to tests designed to yield insight to the soft error rate behavior over the life of the system. A general description of the test system and a discussion of the philosophical aspects of error/failure event segregation is included. Parametric guidelines are developed and a microcomputer system example is presented to illustrate how these guidelines can be followed to minimize system level alpha induced soft error rates.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115027150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362959
L. C. Wagner
The unequivocal indentification of metallization corrosion on humidity related failures has been a considerable problem. While fuming acid decapsulations are normally a reliable means of decapsulation without an attack on aluminum metallization, some question concerning possible aluminum attack during such precedures can be inevitable. Dry mechanical decapsulations are definative but not 100% effective and limit further electrical analysis. They are destructive to bonding if any further analysis is to be attempted in the absence of metal corrosion. A technique employing an infrared microscope has been successfully used to locate metal corrosion prior to exposing the active face of the bar and maintaining pin integrity for further analysis.
{"title":"An IR Microscopy Technique for Failure Analysis of Suspected Metallization Corrosion","authors":"L. C. Wagner","doi":"10.1109/IRPS.1980.362959","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362959","url":null,"abstract":"The unequivocal indentification of metallization corrosion on humidity related failures has been a considerable problem. While fuming acid decapsulations are normally a reliable means of decapsulation without an attack on aluminum metallization, some question concerning possible aluminum attack during such precedures can be inevitable. Dry mechanical decapsulations are definative but not 100% effective and limit further electrical analysis. They are destructive to bonding if any further analysis is to be attempted in the absence of metal corrosion. A technique employing an infrared microscope has been successfully used to locate metal corrosion prior to exposing the active face of the bar and maintaining pin integrity for further analysis.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132082902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362935
Masaaki Isagawa, Yuzi Iwasaki, T. Sutoh
Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.
{"title":"Deformation of AL Metallization in Plastic Encapsulated Semiconductor Devices Caused by Thermal Shock","authors":"Masaaki Isagawa, Yuzi Iwasaki, T. Sutoh","doi":"10.1109/IRPS.1980.362935","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362935","url":null,"abstract":"Deformation of Al metallization was observed during thermal shock tests of plastic encapsulated semiconductor devices. The authors made clear quantitatively the relations between the deformation length and Si chip size, distance from deformation center, molding resin, temperature difference in thermal shock etc. and tried to explain the mechanisms and the cause of this phenomenon.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115778510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362932
H. Fukui, S. H. Wemple, J. Irvin, W. Niehaus, J. Hwang, H. Cox, W. Schlosser, J. Dilorenzo
Some 270 6-mm power GaAs FETs with aluminum gates and silicon-nitride passivation have been aged at elevated channel temperatures under dc-bias with or without rf-drive. One catastrophic burnout and extremely slow degradation have been observed for 2-million device-hours. Tentatively estimated failure rates for burnout and for gradual degradation at a maximum channel temperature in normal operation of 110°C are both well below 100 FITs. This represents an improvement of at least one order of magnitude over previous devices whose reliability is presented in a companion paper1. In the improved model no deterioration in gates and ohmic contacts has been observed. Gradual degradation has been caused by deterioration in the channel material. However, this has been an extremely slow process, giving rise to practically no problem. There has been no difference in gradual degradation between devices aged with and without rf-drive for 6,000 hours at 250°C channel temperature. The present study has already. demonstrated that the power GaAs FETs used as the samples are very reliable.
{"title":"Reliability of Improved Power GaAs Field-Effect Transistors","authors":"H. Fukui, S. H. Wemple, J. Irvin, W. Niehaus, J. Hwang, H. Cox, W. Schlosser, J. Dilorenzo","doi":"10.1109/IRPS.1980.362932","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362932","url":null,"abstract":"Some 270 6-mm power GaAs FETs with aluminum gates and silicon-nitride passivation have been aged at elevated channel temperatures under dc-bias with or without rf-drive. One catastrophic burnout and extremely slow degradation have been observed for 2-million device-hours. Tentatively estimated failure rates for burnout and for gradual degradation at a maximum channel temperature in normal operation of 110°C are both well below 100 FITs. This represents an improvement of at least one order of magnitude over previous devices whose reliability is presented in a companion paper1. In the improved model no deterioration in gates and ohmic contacts has been observed. Gradual degradation has been caused by deterioration in the channel material. However, this has been an extremely slow process, giving rise to practically no problem. There has been no difference in gradual degradation between devices aged with and without rf-drive for 6,000 hours at 250°C channel temperature. The present study has already. demonstrated that the power GaAs FETs used as the samples are very reliable.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115475862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362916
W.J. Hsieh, C. H. Hsin, H. Chi, T.T. Chen
{"title":"The Impact of Bubble Defects on Performance and Reliability","authors":"W.J. Hsieh, C. H. Hsin, H. Chi, T.T. Chen","doi":"10.1109/IRPS.1980.362916","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362916","url":null,"abstract":"","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128380961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362924
Michael Pfarr, A. Hart
Recently, low temperature plasmas of excited gasses have been used to selectively remove materials for analytical purposes. In replacing high herrperature ashing or wet chemical digestiorn, the plasma treatment has proven valuab le because of its selectivity, gentleness, cleanliness and safety. With this method, one can avoid volatile mineral losses, phase changes, trace contaminations and undesireable material loss. This process has particular applications in Failure Analysis with the removal of plastic encapsulations and passivation layers.
{"title":"The use of Plasma Chemistry in Failure Analysis","authors":"Michael Pfarr, A. Hart","doi":"10.1109/IRPS.1980.362924","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362924","url":null,"abstract":"Recently, low temperature plasmas of excited gasses have been used to selectively remove materials for analytical purposes. In replacing high herrperature ashing or wet chemical digestiorn, the plasma treatment has proven valuab le because of its selectivity, gentleness, cleanliness and safety. With this method, one can avoid volatile mineral losses, phase changes, trace contaminations and undesireable material loss. This process has particular applications in Failure Analysis with the removal of plastic encapsulations and passivation layers.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125380041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1980-04-01DOI: 10.1109/IRPS.1980.362918
J. Davies
Magnetic bubble memory components are extremely attractive for applications requiring high density, non-volatility and solid state reliability. Operating lifetest and accelerated stress test results are presented to classify the component error rates. Built-in error correction at the system level can improve error rates by several orders of magnitude. Calculated and measured error correction data are presented.
{"title":"Magnetic Bubble Reliability Testing - Component and System Level Aspects","authors":"J. Davies","doi":"10.1109/IRPS.1980.362918","DOIUrl":"https://doi.org/10.1109/IRPS.1980.362918","url":null,"abstract":"Magnetic bubble memory components are extremely attractive for applications requiring high density, non-volatility and solid state reliability. Operating lifetest and accelerated stress test results are presented to classify the component error rates. Built-in error correction at the system level can improve error rates by several orders of magnitude. Calculated and measured error correction data are presented.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123929996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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