Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633141
F. Medina, F. Mesa, R. Marqués
This work proposes a circuit model based explanation for the extraordinary transmission (ET) of light phenomenon studied in recent scientific literature [1], [2]. ET mainly stands for unexpected transmission of light through periodic arrays of subwavelength holes in a metal screen. The study of this phenomenon has attracted the attention of many scientists working in the fields of Optics and Condensed Matter Physics, giving place to some controversial explanations. The existence of surface plasmons supported by the metal/air interface at optical frequencies has been considered the underlying reason behind ET. Our contribution tries to offer a relatively simple explanation of ET based on conventional waveguide/transmission-line theory. It will be shown how this simplified microwave-engineering standpoint offers satisfactory explanation for most ET findings. Indeed, ET should be expected not only at optical frequencies but also at lower frequencies, when surface plasmons are not possible.
{"title":"Equivalent circuit model to explain extraordinary transmission","authors":"F. Medina, F. Mesa, R. Marqués","doi":"10.1109/MWSYM.2008.4633141","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633141","url":null,"abstract":"This work proposes a circuit model based explanation for the extraordinary transmission (ET) of light phenomenon studied in recent scientific literature [1], [2]. ET mainly stands for unexpected transmission of light through periodic arrays of subwavelength holes in a metal screen. The study of this phenomenon has attracted the attention of many scientists working in the fields of Optics and Condensed Matter Physics, giving place to some controversial explanations. The existence of surface plasmons supported by the metal/air interface at optical frequencies has been considered the underlying reason behind ET. Our contribution tries to offer a relatively simple explanation of ET based on conventional waveguide/transmission-line theory. It will be shown how this simplified microwave-engineering standpoint offers satisfactory explanation for most ET findings. Indeed, ET should be expected not only at optical frequencies but also at lower frequencies, when surface plasmons are not possible.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"9 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114126395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4632992
Jia-Shiang Fu, Xinen Zhu, J. Phillips, A. Mortazawi
A general purpose impedance tuner is proposed for adaptive matching applications to compensate the impedance variations of devices such as antennas or power amplifiers. The impedance tuner, composed of a phase shifter and a variable transformer, is designed based on all-pass networks. Thin-film barium-strontium titanate (BST) parallel-plate capacitors fabricated on sapphire are used as the tuning elements. The impedance tuner is completed by mounting chip inductors and blocking capacitors on the same substrate. On-wafer measurement results show that, at 1.8 GHz, impedance transformation ratio of 4 can be achieved and the dissipation loss for all biasing voltages (0 to 18 V) is less than 5.5 dB.
{"title":"A ferroelectric-based impedance tuner for adaptive matching applications","authors":"Jia-Shiang Fu, Xinen Zhu, J. Phillips, A. Mortazawi","doi":"10.1109/MWSYM.2008.4632992","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4632992","url":null,"abstract":"A general purpose impedance tuner is proposed for adaptive matching applications to compensate the impedance variations of devices such as antennas or power amplifiers. The impedance tuner, composed of a phase shifter and a variable transformer, is designed based on all-pass networks. Thin-film barium-strontium titanate (BST) parallel-plate capacitors fabricated on sapphire are used as the tuning elements. The impedance tuner is completed by mounting chip inductors and blocking capacitors on the same substrate. On-wafer measurement results show that, at 1.8 GHz, impedance transformation ratio of 4 can be achieved and the dissipation loss for all biasing voltages (0 to 18 V) is less than 5.5 dB.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114204105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633016
J. Nessel, R. Lee, C. Mueller, M. Kozicki, Minghan Ren, J. Morse
This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic “bridge” to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of ∼0.5dB, isolation of ≫0dB, low voltage operation (1V), low power (∼¼W) and low energy (∼nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.
{"title":"A novel nanoionics-based switch for microwave applications","authors":"J. Nessel, R. Lee, C. Mueller, M. Kozicki, Minghan Ren, J. Morse","doi":"10.1109/MWSYM.2008.4633016","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633016","url":null,"abstract":"This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic “bridge” to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of ∼0.5dB, isolation of ≫0dB, low voltage operation (1V), low power (∼¼W) and low energy (∼nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114501427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633191
A. Alghanim, J. Lees, T. Williams, J. Benedikt, P. Tasker
The usual approach in minimizing electrical memory in PA design is to terminate base-band impedances into a broadband short circuit, usually provided in the form of an array of bypass capacitors attached close to the output terminal of the device. This paper investigates the validity of this approach and compares linearity performance under different IF impedance terminations. Active IF load-pull is used as a modulation-frequency independent means of engineering the significant low-frequency IF voltage components generated as a result of two-tone excitation. Selective IF loads are presented in order to probe device linearity as a function of IF impedance. One significant observation is the existence of specific IF loads that result in the suppression of both IM3 and IM5 intermodulation components by more than 16dB and 10dB respectively, in comparison to the case of a conventional IF short termination. These investigations are performed using a 20W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system.
{"title":"Reduction of electrical baseband memory effect in high-power LDMOS devices using optimum termination for IMD3 and IMD5 using active load-pull","authors":"A. Alghanim, J. Lees, T. Williams, J. Benedikt, P. Tasker","doi":"10.1109/MWSYM.2008.4633191","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633191","url":null,"abstract":"The usual approach in minimizing electrical memory in PA design is to terminate base-band impedances into a broadband short circuit, usually provided in the form of an array of bypass capacitors attached close to the output terminal of the device. This paper investigates the validity of this approach and compares linearity performance under different IF impedance terminations. Active IF load-pull is used as a modulation-frequency independent means of engineering the significant low-frequency IF voltage components generated as a result of two-tone excitation. Selective IF loads are presented in order to probe device linearity as a function of IF impedance. One significant observation is the existence of specific IF loads that result in the suppression of both IM3 and IM5 intermodulation components by more than 16dB and 10dB respectively, in comparison to the case of a conventional IF short termination. These investigations are performed using a 20W LDMOS device characterised at 2.1 GHz within a purpose built, high-power measurement system.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115460353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633258
H. Grubinger, H. Barth, R. Vahldieck
This paper introduces a novel 30 GHz turnstile coupler design which is very compact, exhibits low losses and can be manufactured at low cost. The turnstile coupler is modular and allows the implementation of amplifiers as highly integrated millimeter wave power combiners. The achievable bandwidth is approximately 20%.
{"title":"A low-loss, wideband combiner for power amplification at Ka-band frequencies","authors":"H. Grubinger, H. Barth, R. Vahldieck","doi":"10.1109/MWSYM.2008.4633258","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633258","url":null,"abstract":"This paper introduces a novel 30 GHz turnstile coupler design which is very compact, exhibits low losses and can be manufactured at low cost. The turnstile coupler is modular and allows the implementation of amplifiers as highly integrated millimeter wave power combiners. The achievable bandwidth is approximately 20%.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123220419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633090
T. Pochiraju, V. Fusco
A novel method to produce direct QPSK modulation is presented. The key feature of the architecture is the absence of mixers and as a result unwanted mixing products. Bandwidth limitations of previous designs are overcome with a novel phase shifting technique. A prototype is demonstrated at 2.4 GHz to showcase the performance of the modulator. An error vector magnitude (EVM) of less than 5% is obtained over a 600 MHz bandwidth. The power consumption of the circuit is less than 10μW and its 1dB compression point is 17dBm.
{"title":"Ultra-low power high bandwidth QPSK modulator","authors":"T. Pochiraju, V. Fusco","doi":"10.1109/MWSYM.2008.4633090","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633090","url":null,"abstract":"A novel method to produce direct QPSK modulation is presented. The key feature of the architecture is the absence of mixers and as a result unwanted mixing products. Bandwidth limitations of previous designs are overcome with a novel phase shifting technique. A prototype is demonstrated at 2.4 GHz to showcase the performance of the modulator. An error vector magnitude (EVM) of less than 5% is obtained over a 600 MHz bandwidth. The power consumption of the circuit is less than 10μW and its 1dB compression point is 17dBm.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122658085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633195
M. Koochakzadeh, A. Abbaspour-Tamijani
A multi-resolution channel select filter topology is proposed for ultra-wideband coverage, as the multi-stage cascade of bimodal filters with self-complementary periodic frequency response. A 4-stage implantation based on PIN diode switches is presented. This prototype covers DC-2.5 GHz in 16 equal bandwidth channels of 156 MHz with a maximum insertion loss of 6.5 dB.
{"title":"A multi-resolution channel-select filter with ultra-wide frequency coverage","authors":"M. Koochakzadeh, A. Abbaspour-Tamijani","doi":"10.1109/MWSYM.2008.4633195","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633195","url":null,"abstract":"A multi-resolution channel select filter topology is proposed for ultra-wideband coverage, as the multi-stage cascade of bimodal filters with self-complementary periodic frequency response. A 4-stage implantation based on PIN diode switches is presented. This prototype covers DC-2.5 GHz in 16 equal bandwidth channels of 156 MHz with a maximum insertion loss of 6.5 dB.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122853974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633046
Hong Yin, Danqiong Hou, G. Bilbro, R. Trew
HFETs fabricated with nitride-based wide bandgap materials are capable of producing high RF output power and are promising for the next generation radar and wireless communication systems. To take full advantage of this new kind of device, large-signal models suitable for use in commercial microwave circuit simulators are desirable, but existing models can only interpolate or fit data that has been measured from previously fabricated devices. In this study, a new physics-based large-signal model for AlGaN/GaN HFETs is introduced that can predict the large-signal performance of an HFET from its design parameters. It couples a compact physics-based DC module with a harmonic balance RF module. This new model is shown to agree with both DC and RF experimental data without any adjustable fitting parameters for the device. The DC IV and transconductance curves predicted by this new model also agree with those generated by a commercial 2D simulator.
{"title":"Harmonic balance simulation of a new physics based model of the AlGaN/GaN HFET","authors":"Hong Yin, Danqiong Hou, G. Bilbro, R. Trew","doi":"10.1109/MWSYM.2008.4633046","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633046","url":null,"abstract":"HFETs fabricated with nitride-based wide bandgap materials are capable of producing high RF output power and are promising for the next generation radar and wireless communication systems. To take full advantage of this new kind of device, large-signal models suitable for use in commercial microwave circuit simulators are desirable, but existing models can only interpolate or fit data that has been measured from previously fabricated devices. In this study, a new physics-based large-signal model for AlGaN/GaN HFETs is introduced that can predict the large-signal performance of an HFET from its design parameters. It couples a compact physics-based DC module with a harmonic balance RF module. This new model is shown to agree with both DC and RF experimental data without any adjustable fitting parameters for the device. The DC IV and transconductance curves predicted by this new model also agree with those generated by a commercial 2D simulator.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123959660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633042
J. Reynoso‐Hernández, J. E. Zuniga-Juarez, A. Zarate-de Landa
This paper presents a new method for calculating the gate resistance Rg and inductance Lg, of GaN HEMTs. The method consists in forward biasing the gate with low Igs currents (Igs≫0; 0≪Vgs≪Vbi; drain open) and is based on the extrema of Z11 curves. Rg and Lg are determined from the extrema of Z11 curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published [3,6] in that it avoids the use of the resonance frequency in the imaginary part of Z11 and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method.
{"title":"A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves","authors":"J. Reynoso‐Hernández, J. E. Zuniga-Juarez, A. Zarate-de Landa","doi":"10.1109/MWSYM.2008.4633042","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633042","url":null,"abstract":"This paper presents a new method for calculating the gate resistance R<inf>g</inf> and inductance L<inf>g</inf>, of GaN HEMTs. The method consists in forward biasing the gate with low I<inf>gs</inf> currents (I<inf>gs</inf>≫0; 0≪V<inf>gs</inf>≪V<inf>bi</inf>; drain open) and is based on the extrema of Z<inf>11</inf> curves. R<inf>g</inf> and L<inf>g</inf> are determined from the extrema of Z<inf>11</inf> curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published [3,6] in that it avoids the use of the resonance frequency in the imaginary part of Z<inf>11</inf> and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125173830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-06-15DOI: 10.1109/MWSYM.2008.4633119
R. Feger, A. Haderer, Stefan Dipl.-Ing. Schuster, S. Scheiblhofer, A. Stelzer
The measurement of different target parameters using radar systems has been an active research area for the last decades. Particularly target angle measurement is a very demanding topic, because obtaining good measurement results often goes hand in hand with extensive hardware effort. Especially for sensors used in the mass market, e.g. in automotive applications like adaptive cruise control this may be prohibitive. Therefore we address target localization using a compact frequency-modulated continuous-wave (FMCW) radar sensor. The angular measurement results are improved compared to standard beamforming methods using an adaptive beamforming approach. This approach will be applied to the FMCW principle in a way that allows the use of well known methods for the determination of other target parameters like range or velocity. The applicability of the developed theory will be shown on different measurement scenarios using a 24-GHz prototype radar system.
{"title":"A four channel 24-GHz FMCW radar sensor with two-dimensional target localization capabilities","authors":"R. Feger, A. Haderer, Stefan Dipl.-Ing. Schuster, S. Scheiblhofer, A. Stelzer","doi":"10.1109/MWSYM.2008.4633119","DOIUrl":"https://doi.org/10.1109/MWSYM.2008.4633119","url":null,"abstract":"The measurement of different target parameters using radar systems has been an active research area for the last decades. Particularly target angle measurement is a very demanding topic, because obtaining good measurement results often goes hand in hand with extensive hardware effort. Especially for sensors used in the mass market, e.g. in automotive applications like adaptive cruise control this may be prohibitive. Therefore we address target localization using a compact frequency-modulated continuous-wave (FMCW) radar sensor. The angular measurement results are improved compared to standard beamforming methods using an adaptive beamforming approach. This approach will be applied to the FMCW principle in a way that allows the use of well known methods for the determination of other target parameters like range or velocity. The applicability of the developed theory will be shown on different measurement scenarios using a 24-GHz prototype radar system.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130279692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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