Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619582
K. Kruckmeyer, Elisa Morozumi, R. Eddy, T. Trinh, Tom Santiago, P. Maillard
National Semiconductor's 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.
{"title":"Single Event Transient and ELDRS Characterization Test Results for LM4050QML 2.5V Precision Reference","authors":"K. Kruckmeyer, Elisa Morozumi, R. Eddy, T. Trinh, Tom Santiago, P. Maillard","doi":"10.1109/REDW.2010.5619582","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619582","url":null,"abstract":"National Semiconductor's 100 krad(Si) low dose rate qualified, 2.5V precision reference, LM4050WG2.5RLQV, was put through heavy ion testing and an enhanced low dose rate sensitivity (ELDRS) characterization. The results are presented here.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127899136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619512
A. Jones, D. O'Connor, E. Thiemann, V. A. Drake, Gregory Newcomb, Neil R. White, D. Aalami, H. Clark, R. Ladbury, B. von Przewoski, Sharon E. Dooley, Seth Finkelstein, P. Haskins, Vicki Wei Hsu, B. Kirby, T. Reese, Patricia Soto Hoffmann
We report the results of Single Event Effect (SEE) and Total Integrated Dose (TID) testing of a very-low-noise six-channel electrometer Application Specific Integrated Circuit (ASIC) constructed through the MOSIS service using the ON Semiconductor C5N process. The ASICs were designed using Radiation Hard By Design (RHBD) layout rules, and TID mitigation strategies. This testing provides a verification that the device does not show latch-up behavior, and that performance is not unduly compromised by TID. The SEE testing, using heavy ions, took place at the Single Event Effects Facility at Texas A&M University using the 24.8~MeV/u beam with ions Ar, Kr, and Xe giving a range of Linear Energy Transfer (LET) at the device of 7.5-63.5 MeV cm2/mg. No latch-ups were seen even at an elevated temperature (30C). TID testing using protons was conducted at the Indiana University Cyclotron Facility on the Radiation Effects Research Program RERS2 beamline. Parts were tested to a total dose of 300 krad(Si). As these ASICs are constructed using CMOS technology there will be no Enhanced Low Dose Rate Sensitivity (ELDRS)
{"title":"Radiation Testing a Very Low-Noise RHBD ASIC Electrometer","authors":"A. Jones, D. O'Connor, E. Thiemann, V. A. Drake, Gregory Newcomb, Neil R. White, D. Aalami, H. Clark, R. Ladbury, B. von Przewoski, Sharon E. Dooley, Seth Finkelstein, P. Haskins, Vicki Wei Hsu, B. Kirby, T. Reese, Patricia Soto Hoffmann","doi":"10.1109/REDW.2010.5619512","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619512","url":null,"abstract":"We report the results of Single Event Effect (SEE) and Total Integrated Dose (TID) testing of a very-low-noise six-channel electrometer Application Specific Integrated Circuit (ASIC) constructed through the MOSIS service using the ON Semiconductor C5N process. The ASICs were designed using Radiation Hard By Design (RHBD) layout rules, and TID mitigation strategies. This testing provides a verification that the device does not show latch-up behavior, and that performance is not unduly compromised by TID. The SEE testing, using heavy ions, took place at the Single Event Effects Facility at Texas A&M University using the 24.8~MeV/u beam with ions Ar, Kr, and Xe giving a range of Linear Energy Transfer (LET) at the device of 7.5-63.5 MeV cm2/mg. No latch-ups were seen even at an elevated temperature (30C). TID testing using protons was conducted at the Indiana University Cyclotron Facility on the Radiation Effects Research Program RERS2 beamline. Parts were tested to a total dose of 300 krad(Si). As these ASICs are constructed using CMOS technology there will be no Enhanced Low Dose Rate Sensitivity (ELDRS)","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121871014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619500
G. Chaumont, Andre Uguen, C. Prugne, F. Malou
We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened A/D converter.
我们研究了单事件效应表征和高达300克拉(Si)的rad硬化A/D转换器的总电离剂量行为。
{"title":"TID and SEE Responses of Rad-Hardened A/D Converters","authors":"G. Chaumont, Andre Uguen, C. Prugne, F. Malou","doi":"10.1109/REDW.2010.5619500","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619500","url":null,"abstract":"We present Single Event Effects characterization and Total Ionizing Dose behaviour up to 300 krad(Si) on Rad-Hardened A/D converter.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121954172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619509
Keith E. Holbert, A. Sharif Heger, S. McCready
Prompted by the unexpected failure of piezoresistive sensors in both an elevated gamma-ray environment and reactor core pulse tests, we initiated radiation testing of several MEMS piezoresistive accelerometers and pressure transducers to ascertain their radiation hardness. Some commercial off-the-shelf sensors are found to be viable options for use in a high-energy pulsed reactor, but others suffer severe degradation and even catastrophic failure. Although researchers are promoting the use of MEMS devices in radiation-harsh environment, we nevertheless find assurance testing necessary.
{"title":"Performance of Commercial Off-the-Shelf Microelectromechanical Systems Sensors in a Pulsed Reactor Environment","authors":"Keith E. Holbert, A. Sharif Heger, S. McCready","doi":"10.1109/REDW.2010.5619509","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619509","url":null,"abstract":"Prompted by the unexpected failure of piezoresistive sensors in both an elevated gamma-ray environment and reactor core pulse tests, we initiated radiation testing of several MEMS piezoresistive accelerometers and pressure transducers to ascertain their radiation hardness. Some commercial off-the-shelf sensors are found to be viable options for use in a high-energy pulsed reactor, but others suffer severe degradation and even catastrophic failure. Although researchers are promoting the use of MEMS devices in radiation-harsh environment, we nevertheless find assurance testing necessary.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130141070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619513
R. Fuller, W. Morris, D. Gifford, R. Lowther, Jon Gwin, J. Salzman, D. Alexander, K. Hunt
A hardened version of Texas Instruments'' VC33 Digital Signal Processor was created without any mask changes. The commercial mask set was processed using Silicon Space Technology''s HardSIL™ process variant to produce the hardened version. Radiation testing of the resulting hardened circuit demonstrated significant improvement in performance.
德州仪器VC33数字信号处理器的强化版本在没有任何掩模改变的情况下创建。商用掩模组使用Silicon Space Technology的HardSIL™工艺变体来生产硬化版本。由此产生的硬化电路的辐射测试证明了性能的显著改善。
{"title":"Hardening of Texas Instruments' VC33 DSP","authors":"R. Fuller, W. Morris, D. Gifford, R. Lowther, Jon Gwin, J. Salzman, D. Alexander, K. Hunt","doi":"10.1109/REDW.2010.5619513","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619513","url":null,"abstract":"A hardened version of Texas Instruments'' VC33 Digital Signal Processor was created without any mask changes. The commercial mask set was processed using Silicon Space Technology''s HardSIL™ process variant to produce the hardened version. Radiation testing of the resulting hardened circuit demonstrated significant improvement in performance.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134343441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619488
D. Hiemstra
The 2009 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.
审查了2009年车间记录，并准备了一个表格，以便按部件号、类型或效果查找辐射响应数据。
{"title":"Guide to the 2009 IEEE Radiation Effects Data Workshop Record","authors":"D. Hiemstra","doi":"10.1109/REDW.2010.5619488","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619488","url":null,"abstract":"The 2009 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131613416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619505
Richard D. Harris, S. McClure, B. Rax, Dennis O. Thornbourn, A. Kenna, K. Clark, Tsun-Yee Yan
Evaluation of bipolar linear parts which may have Enhanced Low Dose Rate Sensitivity (ELDRS) is problematic for missions that have very high dose radiation requirements. The accepted standards for evaluating parts that display ELDRS require testing at a very low dose rate which could be prohibitively long for very high dose missions. In this work, a methodology for ELDRS characterization of bipolar parts for mission doses up to 1 Mrad(Si) is evaluated. The procedure employs an initial dose rate of 0.01 rad(Si)/s to a total dose of 50 krad(Si) and then changes to 0.04 rad(Si)/s to a total dose of 1 Mrad(Si). This procedure appears to work well. No change in rate of degradation with dose has been observed when the dose rate is changed from 0.01 to 0.04 rad(Si)/s. This is taken as an indication that the degradation due to the higher dose rate is equivalent to that at the lower dose rate at the higher dose levels, at least for the parts studied to date. In several cases, significant parameter degradation or functional failure not observed at HDR was observed at LDR at fairly high total doses (50 to 250 krad(Si)). This behavior calls into question the use of dose rate trend data and enhancement factors to predict LDR performance.
{"title":"ELDRS Characterization for a Very High Dose Mission","authors":"Richard D. Harris, S. McClure, B. Rax, Dennis O. Thornbourn, A. Kenna, K. Clark, Tsun-Yee Yan","doi":"10.1109/REDW.2010.5619505","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619505","url":null,"abstract":"Evaluation of bipolar linear parts which may have Enhanced Low Dose Rate Sensitivity (ELDRS) is problematic for missions that have very high dose radiation requirements. The accepted standards for evaluating parts that display ELDRS require testing at a very low dose rate which could be prohibitively long for very high dose missions. In this work, a methodology for ELDRS characterization of bipolar parts for mission doses up to 1 Mrad(Si) is evaluated. The procedure employs an initial dose rate of 0.01 rad(Si)/s to a total dose of 50 krad(Si) and then changes to 0.04 rad(Si)/s to a total dose of 1 Mrad(Si). This procedure appears to work well. No change in rate of degradation with dose has been observed when the dose rate is changed from 0.01 to 0.04 rad(Si)/s. This is taken as an indication that the degradation due to the higher dose rate is equivalent to that at the lower dose rate at the higher dose levels, at least for the parts studied to date. In several cases, significant parameter degradation or functional failure not observed at HDR was observed at LDR at fairly high total doses (50 to 250 krad(Si)). This behavior calls into question the use of dose rate trend data and enhancement factors to predict LDR performance.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133068463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619493
C. Hafer, B. Baranski, J. Larsen, F. Sievert, A. Jordan
A 4-Port SpaceWire Router has been designed, manufactured, and characterized for radiation effects. The device is SEL immune and TID tolerant to 100 krad(Si). The SEE performance is summarized.
{"title":"SEE Results for a 4-Port SpaceWire Router","authors":"C. Hafer, B. Baranski, J. Larsen, F. Sievert, A. Jordan","doi":"10.1109/REDW.2010.5619493","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619493","url":null,"abstract":"A 4-Port SpaceWire Router has been designed, manufactured, and characterized for radiation effects. The device is SEL immune and TID tolerant to 100 krad(Si). The SEE performance is summarized.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128474027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619508
D. Nguyen, F. Irom
Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.
{"title":"Comparison of TID Response of Micron Technology Single-Level Cell High Density NAND Flash Memories","authors":"D. Nguyen, F. Irom","doi":"10.1109/REDW.2010.5619508","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619508","url":null,"abstract":"Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1 Gb, 2 Gb, 4 Gb and 8 Gb NAND flash memories are reported. Scaling effects in TID response is discussed. Floating gates bit error scales with feature size. Also, charge pump TID degradation and standby current improves with scaling.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126834050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619492
R. Lawrence, J. Ross, Neil E. Wood
Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.
{"title":"90-nm Digital Single Event Transient Pulsewidth Measurements","authors":"R. Lawrence, J. Ross, Neil E. Wood","doi":"10.1109/REDW.2010.5619492","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619492","url":null,"abstract":"Single event transient (SET) pulsewidth measurements were made on 9SF 90 nm shift registers built with temporal delay latches on epitaxial substrates. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133771688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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