Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619497
C. Hafer, M. Von Thun, M. Leslie, F. Sievert, A. Jordan
Abstract-- A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration [1]. The Single Event Effects (SEE) performance is reported.
{"title":"Commercially Designed and Manufactured SDRAM SEE Data","authors":"C. Hafer, M. Von Thun, M. Leslie, F. Sievert, A. Jordan","doi":"10.1109/REDW.2010.5619497","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619497","url":null,"abstract":"Abstract-- A commercially designed and manufactured 512Mb SDRAM is Single Event Latchup (SEL) immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration [1]. The Single Event Effects (SEE) performance is reported.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122330616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619511
Dakai Chen, J. Pellish, A. Phan, Hak Kim, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, P. Marshall, K. Label
We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth < 7.4 MeV•cm2/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LETth < 4.4 MeV•cm2/mg at 200 MHz; the LETth decreases with increasing frequency. The SET cross-sections increase with increasing operating frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz erase several signal cycles. We also found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.
{"title":"Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers","authors":"Dakai Chen, J. Pellish, A. Phan, Hak Kim, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, P. Marshall, K. Label","doi":"10.1109/REDW.2010.5619511","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619511","url":null,"abstract":"We present results on heavy-ion and proton irradiations for commercial SiGe BiCMOS differential amplifiers: LTC6400-20 from Linear Technology and THS4304 from Texas Instruments. We found that the devices are susceptible to heavy-ion-induced SETs, with relatively low LET thresholds (LETth). The LTC6400 exhibits a LETth < 7.4 MeV•cm2/mg for frequencies ranging from 10 to 1000 MHz. The THS4304 exhibits a LETth < 4.4 MeV•cm2/mg at 200 MHz; the LETth decreases with increasing frequency. The SET cross-sections increase with increasing operating frequency. The significance of the SETs also increases with frequency. The SETs at 1000 MHz erase several signal cycles. We also found that the LTC6400 is relatively robust against 198 and 54 MeV protons. We did not observe angular sensitivity from the proton irradiations.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124196530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619506
Dakai Chen, J. Forney, R. Pease, A. Phan, M. Carts, S. R. Cox, K. Kruckmeyer, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, G. Chaumont, Herve Duperray, A. Ouellet, K. Label
We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.
{"title":"The Effects of ELDRS at Ultra-Low Dose Rates","authors":"Dakai Chen, J. Forney, R. Pease, A. Phan, M. Carts, S. R. Cox, K. Kruckmeyer, Sam Burns, Rafi Albarian, Bruce Holcombe, Bradley Little, J. Salzman, G. Chaumont, Herve Duperray, A. Ouellet, K. Label","doi":"10.1109/REDW.2010.5619506","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619506","url":null,"abstract":"We present results on the effects on ELDRS at dose rates of 10, 5, 1, and 0.5 mrad(Si)/s for a variety of radiation hardened and commercial devices. We observed low dose rate enhancement below 10 mrad(Si)/s in several different parts. The magnitudes of the dose rate effects vary. The TL750L, a commercial voltage regulator, showed dose rate dependence in the functional failures, with initial failures occurring after 10 krad(Si) for the parts irradiated at 0.5 mrad(Si)/s. The RH1021 showed an increase in low dose rate enhancement by 2X at 5 mrad(Si)/s relative to 8 mrad(Si)/s and high dose rate, and parametric failure after 100 krad(Si). Additionally the ELDRS-free devices, such as the LM158 and LM117, showed evidence of dose rate sensitivity in parametric degradations. Several other parts also displayed dose rate enhancement, with relatively lower degradations up to ~ 15 to 20 krad(Si). The magnitudes of the dose rate enhancement will likely increase in significance at higher total dose levels.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132289746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-20DOI: 10.1109/REDW.2010.5619701
D. L. Hansen, A. Le, Kay Chesnut, E. Miller, S. Pong, Sichul Sung, J. Truong
Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.
{"title":"SEU Testing of SiGe Bipolar and BiCMOS Circuits","authors":"D. L. Hansen, A. Le, Kay Chesnut, E. Miller, S. Pong, Sichul Sung, J. Truong","doi":"10.1109/REDW.2010.5619701","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619701","url":null,"abstract":"Bipolar and BiCMOS divider circuits were tested using heavy ions to determine their sensitivity to single-event effects (SEE) in terms of differences in cross-section and upset duration. No single-event latchups (SEL) were observed under any conditions. A triple-mode-redundant (TMR) design was found to be effective in reducing the SEE cross section and preventing phase-shift upsets which were the dominant upset type in the non-hardened design.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129002548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-19DOI: 10.1109/REDW.2010.5619495
S. McClure, G. Allen, F. Irom, L. Scheick, P. Adell, T. Miyahira
This paper reports heavy ion and proton-induced single event effect (SEE) results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.
{"title":"Compendium of Test Results of Recent Single Event Effect Tests Conducted by the Jet Propulsion Laboratory","authors":"S. McClure, G. Allen, F. Irom, L. Scheick, P. Adell, T. Miyahira","doi":"10.1109/REDW.2010.5619495","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619495","url":null,"abstract":"This paper reports heavy ion and proton-induced single event effect (SEE) results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122894788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-20DOI: 10.1109/REDW.2010.5619494
M. O’Bryan, K. Label, J. Pellish, Dakai Chen, J. Lauenstein, C. Marshall, R. Ladbury, T. Oldham, Hak S. Kim, A. Phan, M. Berg, M. Carts, A. Sanders, S. Buchner, P. Marshall, M. Xapsos, F. Irom, L. Pearce, E. T. Thomson, T. Bernard, H. W. Satterfield, A. P. Williams, N. V. van Vonno, J. Salzman, Sam Burns, Rafi Albarian
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
{"title":"Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA","authors":"M. O’Bryan, K. Label, J. Pellish, Dakai Chen, J. Lauenstein, C. Marshall, R. Ladbury, T. Oldham, Hak S. Kim, A. Phan, M. Berg, M. Carts, A. Sanders, S. Buchner, P. Marshall, M. Xapsos, F. Irom, L. Pearce, E. T. Thomson, T. Bernard, H. W. Satterfield, A. P. Williams, N. V. van Vonno, J. Salzman, Sam Burns, Rafi Albarian","doi":"10.1109/REDW.2010.5619494","DOIUrl":"https://doi.org/10.1109/REDW.2010.5619494","url":null,"abstract":"We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124714198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/redw.2010.5619490
D. Hiemstra, G. Battiston, Prab Gill
Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-5 FPGA are presented. Upset rates in the space radiation environment are estimated.
{"title":"Single Event Upset Characterization of the Virtex-5 Field Programmable Gate Array Using Proton Irradiation","authors":"D. Hiemstra, G. Battiston, Prab Gill","doi":"10.1109/redw.2010.5619490","DOIUrl":"https://doi.org/10.1109/redw.2010.5619490","url":null,"abstract":"Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-5 FPGA are presented. Upset rates in the space radiation environment are estimated.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115230811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/redw.2010.5619507
Donna J. Cochran, Dakai Chen, T. Oldham, A. Sanders, Hak S. Kim, M. Campola, S. Buchner, K. Label, C. Marshall, J. Pellish, M. Carts, M. O’Bryan
Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
{"title":"Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA","authors":"Donna J. Cochran, Dakai Chen, T. Oldham, A. Sanders, Hak S. Kim, M. Campola, S. Buchner, K. Label, C. Marshall, J. Pellish, M. Carts, M. O’Bryan","doi":"10.1109/redw.2010.5619507","DOIUrl":"https://doi.org/10.1109/redw.2010.5619507","url":null,"abstract":"Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121626858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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