We use deep supervised learning for the Poisson denoising of low-dose scanning electron microscope (SEM) images as a step in the estimation of line edge roughness (LER) and line width roughness (LWR). Our denoising algorithm applies a deep convolutional neural network called SEMNet with 17 convolutional, 16 batch-normalization and 16 dropout layers to noisy images. We trained and tested SEMNet with a dataset of 100800 simulated SEM rough line images constructed by means of the Thorsos method and the ARTIMAGEN library developed by the National Institute of Standards and Technology. SEMNet achieved considerable improvements in peak signal-to-noise ratio (PSNR) as well as the best LER/LWR estimation accuracy compared with standard image denoisers.
{"title":"Deep supervised learning to estimate true rough line images from SEM images","authors":"N. Chaudhary, S. Savari, S. S. Yeddulapalli","doi":"10.1117/12.2324341","DOIUrl":"https://doi.org/10.1117/12.2324341","url":null,"abstract":"We use deep supervised learning for the Poisson denoising of low-dose scanning electron microscope (SEM) images as a step in the estimation of line edge roughness (LER) and line width roughness (LWR). Our denoising algorithm applies a deep convolutional neural network called SEMNet with 17 convolutional, 16 batch-normalization and 16 dropout layers to noisy images. We trained and tested SEMNet with a dataset of 100800 simulated SEM rough line images constructed by means of the Thorsos method and the ARTIMAGEN library developed by the National Institute of Standards and Technology. SEMNet achieved considerable improvements in peak signal-to-noise ratio (PSNR) as well as the best LER/LWR estimation accuracy compared with standard image denoisers.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"48 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123151396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Accurate calibration of the optical and resist parameters is invaluable for the computation of the dose distribution needed to fabricate a desired non-binary photoresist topography. This paper presents a method for precisely evaluating the 3D point spread function (PSF) and model parameters for the resist processes in laser grayscale lithography. The 3D PSF and resist model parameters were determined by fitting a detailed model of the grayscale process to experimental measurements of an array of test patterns. Measuring the entire 3D profile provides more data for process calibration, and therefore a more accurate model. The derived model parameters were applied to correctly predict the topography of sawtooth patterns.
{"title":"Accurate determination of 3D PSF and resist effects in grayscale laser lithography","authors":"T. Onanuga, C. Kaspar, H. Sailer, A. Erdmann","doi":"10.1117/12.2326007","DOIUrl":"https://doi.org/10.1117/12.2326007","url":null,"abstract":"Accurate calibration of the optical and resist parameters is invaluable for the computation of the dose distribution needed to fabricate a desired non-binary photoresist topography. This paper presents a method for precisely evaluating the 3D point spread function (PSF) and model parameters for the resist processes in laser grayscale lithography. The 3D PSF and resist model parameters were determined by fitting a detailed model of the grayscale process to experimental measurements of an array of test patterns. Measuring the entire 3D profile provides more data for process calibration, and therefore a more accurate model. The derived model parameters were applied to correctly predict the topography of sawtooth patterns.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123777021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lithography requirements for Advanced Packaging & MEMS are very different compared to mainstream semiconductor industries’ needs. Even if the market entry barrier is much lower in the “More than Moore” market, customer adoptions needs are higher in the packaging area with respect to resolution, overlay, sidewall angle, and depth of focus (DOF), wafer handling for wafer bow and backside alignment. Key technical trends, requirements and challenges regarding the lithography technologies will be addressed in this paper. In addition, more insights on the current and emerging lithography methods for More than Moore devices will be included, as well as market forecast, competitive landscape of the major equipment suppliers addressing these fields.
与主流半导体行业的需求相比，先进封装和MEMS的光刻要求非常不同。即使“超过摩尔”市场的市场准入门槛要低得多，但在封装领域，客户对分辨率、覆盖层、侧壁角度、对焦深度(DOF)、晶圆弯曲和背面对准的晶圆处理等方面的需求更高。本文将讨论光刻技术的主要技术趋势、要求和挑战。此外，还将包括对more more Moore器件当前和新兴光刻方法的更多见解，以及市场预测，解决这些领域的主要设备供应商的竞争格局。
{"title":"Lithography technology and trends for More than Moore devices: advanced packaging and MEMS devices","authors":"A. Pizzagalli","doi":"10.1117/12.2326784","DOIUrl":"https://doi.org/10.1117/12.2326784","url":null,"abstract":"Lithography requirements for Advanced Packaging & MEMS are very different compared to mainstream semiconductor industries’ needs. Even if the market entry barrier is much lower in the “More than Moore” market, customer adoptions needs are higher in the packaging area with respect to resolution, overlay, sidewall angle, and depth of focus (DOF), wafer handling for wafer bow and backside alignment. Key technical trends, requirements and challenges regarding the lithography technologies will be addressed in this paper. In addition, more insights on the current and emerging lithography methods for More than Moore devices will be included, as well as market forecast, competitive landscape of the major equipment suppliers addressing these fields.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122288693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The durability of deposition repairs of two different e-beam mask repair tools has been examined and compared in this work. To obtain this data, clear defects on production masks have been repaired with both tools. In between these repairs the mask was used for production and gathered exposure dose accordingly. The increase of transmission and hence the degradation of the deposition has been determined by AIMSTM. We could confirm that one tool/process shows better stability of the depositions than the other.
{"title":"Deposition durability of e-beam mask repair","authors":"T. Krome, C. Holfeld, Tim Göhler, P. Nesládek","doi":"10.1117/12.2323905","DOIUrl":"https://doi.org/10.1117/12.2323905","url":null,"abstract":"The durability of deposition repairs of two different e-beam mask repair tools has been examined and compared in this work. To obtain this data, clear defects on production masks have been repaired with both tools. In between these repairs the mask was used for production and gathered exposure dose accordingly. The increase of transmission and hence the degradation of the deposition has been determined by AIMSTM. We could confirm that one tool/process shows better stability of the depositions than the other.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128071368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Currently, Line Edge Roughness (LER) and Line Width Roughness (LWR) control presents a huge challenge for the lithography step in microelectronic industries. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension, which leads to an increased power consumption by transistors and devices. Hence, the control of roughness needs an adapted metrology. This study proposes to manufacture roughness standard samples and their validation. These samples can be used as standards to evaluate the capabilities of several tools. The preliminary part of this study has been carried out with periodical roughness sample to demonstrate the metrology approach. Further, programming of roughness based on Power Spectral Density (PSD) with Auto-Correlation Function (ACF) model is used to achieve roughness close to the real roughness case. A description of how design programmed roughness has been made and its exposition in the real conditions are detailed in this study. Moreover, a specific methodology of control has been developed, the results obtained have been compared with design inputs and mostly validated by experimental processes. This work represents the first step of manufacturing roughness standard samples based on PSD model design.
{"title":"Manufacturing of roughness standard samples based on ACF/PSD model programming","authors":"J. Reche, M. Besacier, P. Gergaud, Y. Blancquaert","doi":"10.1117/12.2327095","DOIUrl":"https://doi.org/10.1117/12.2327095","url":null,"abstract":"Currently, Line Edge Roughness (LER) and Line Width Roughness (LWR) control presents a huge challenge for the lithography step in microelectronic industries. For advanced nodes, this morphological aspect reaches the same order of magnitude than the Critical Dimension, which leads to an increased power consumption by transistors and devices. Hence, the control of roughness needs an adapted metrology. This study proposes to manufacture roughness standard samples and their validation. These samples can be used as standards to evaluate the capabilities of several tools. The preliminary part of this study has been carried out with periodical roughness sample to demonstrate the metrology approach. Further, programming of roughness based on Power Spectral Density (PSD) with Auto-Correlation Function (ACF) model is used to achieve roughness close to the real roughness case. A description of how design programmed roughness has been made and its exposition in the real conditions are detailed in this study. Moreover, a specific methodology of control has been developed, the results obtained have been compared with design inputs and mostly validated by experimental processes. This work represents the first step of manufacturing roughness standard samples based on PSD model design.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"10775 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129921812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Roeth, H. Steigerwald, Runyuan Han, Oliver Ache, F. Laske
Mask data are presented which demonstrate local registration errors that can be correlated to the writing swathes of stateof-the-art e-beam writers and multi-pass strategies, potentially leading to systematic device registration errors versus design of close to 2nm. Furthermore, error signatures for local charging and process effects are indicated by local registration measurements resulting in systematic error, also on the order of 2nm.
{"title":"Fast local registration measurements for efficient e-beam writer qualification and correction","authors":"K. Roeth, H. Steigerwald, Runyuan Han, Oliver Ache, F. Laske","doi":"10.1117/12.2325627","DOIUrl":"https://doi.org/10.1117/12.2325627","url":null,"abstract":"Mask data are presented which demonstrate local registration errors that can be correlated to the writing swathes of stateof-the-art e-beam writers and multi-pass strategies, potentially leading to systematic device registration errors versus design of close to 2nm. Furthermore, error signatures for local charging and process effects are indicated by local registration measurements resulting in systematic error, also on the order of 2nm.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115741081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Rademaker, Y. Blancquaert, Thibault Labbaye, L. Mourier, N. Figueiro, Francisco Sanchez, R. Koret, J. Pradelles, S. Landis, Stéphane Rey, R. Haupt, Barak Bringoltz, Michael Shifrin, D. Kandel, Avron Ger, M. Sendelbach, S. Wolfling, L. Pain
Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.
{"title":"Feasibility of monitoring a multiple e-beam tool using scatterometry and machine learning: stitching error detection","authors":"G. Rademaker, Y. Blancquaert, Thibault Labbaye, L. Mourier, N. Figueiro, Francisco Sanchez, R. Koret, J. Pradelles, S. Landis, Stéphane Rey, R. Haupt, Barak Bringoltz, Michael Shifrin, D. Kandel, Avron Ger, M. Sendelbach, S. Wolfling, L. Pain","doi":"10.1117/12.2326595","DOIUrl":"https://doi.org/10.1117/12.2326595","url":null,"abstract":"Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123629176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Teyssèdre, P. Quéméré, J. Chartoire, F. Delachat, F. Boudaa, L. Perraud, M. May
In this paper the bias table models for the wafer scale SmartNIL™ technology are addressed and validated using complete Scanning Electron Microscopy (SEM) characterizations and polynomial interpolation functions. Like the other nanoimprint lithography (NIL) technics, this replication technology is known to induce Critical Dimension (CD) variations between the master and the imprint, due to polymer shrinkage, soft stamp deformation or thermal expansion. The bias between the former and final object follows peculiar rules which are specific to this process. To emphasis these singularities, Critical Dimension (CD) uniformity analyses were analyzed onto 200 mm wafers imprinted with the HERCULES® NIL equipment platform. Dedicated masters were manufactured to capture the process signatures: horizontal and vertical line arrays, local densities ranging from 0.1 to 0.9 and minimum CD of 250 nm. The silicon masters were manufactured with 248 optical lithography and dry etching and treated with an anti-sticking layer from Arkema. CD measurements were made for the master and the replicates on 48 well selected features to build interpolations. The bias table, modelled by polynomial functions with a degree of 5 for the density and a degree of 3 for the CD, are compared between horizontal and vertical features, and between the center and the edge of the wafers. Finally the focus is made on the validation of the interpolations by comparing the computed bias and the experimental data.
{"title":"Application of rules-based corrections for wafer scale nanoimprint processes and evaluation of predictive models","authors":"H. Teyssèdre, P. Quéméré, J. Chartoire, F. Delachat, F. Boudaa, L. Perraud, M. May","doi":"10.1117/12.2326106","DOIUrl":"https://doi.org/10.1117/12.2326106","url":null,"abstract":"In this paper the bias table models for the wafer scale SmartNIL™ technology are addressed and validated using complete Scanning Electron Microscopy (SEM) characterizations and polynomial interpolation functions. Like the other nanoimprint lithography (NIL) technics, this replication technology is known to induce Critical Dimension (CD) variations between the master and the imprint, due to polymer shrinkage, soft stamp deformation or thermal expansion. The bias between the former and final object follows peculiar rules which are specific to this process. To emphasis these singularities, Critical Dimension (CD) uniformity analyses were analyzed onto 200 mm wafers imprinted with the HERCULES® NIL equipment platform. Dedicated masters were manufactured to capture the process signatures: horizontal and vertical line arrays, local densities ranging from 0.1 to 0.9 and minimum CD of 250 nm. The silicon masters were manufactured with 248 optical lithography and dry etching and treated with an anti-sticking layer from Arkema. CD measurements were made for the master and the replicates on 48 well selected features to build interpolations. The bias table, modelled by polynomial functions with a degree of 5 for the density and a degree of 3 for the CD, are compared between horizontal and vertical features, and between the center and the edge of the wafers. Finally the focus is made on the validation of the interpolations by comparing the computed bias and the experimental data.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"95 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130564131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Heldt, C. Meinecke, S. Steenhusen, T. Korten, M. Gross, G. Domann, F. Lindberg, D. Reuter, S. Dietz, H. Linke, S. E. Schulz
Although conventional computer technology made a huge leap forward in the past decade, a vast number of computational problems remain inaccessible due to their inherently complex nature. One solution to deal with this computational complexity is to highly parallelize computations and to explore new technologies beyond semiconductor computers. Here, we report on initial results leading to a device employing a biological computation approach called network-based biocomputation (NBC). So far, the manufacturing process relies on conventional Electron Beam Lithography (EBL). However we show first promising results expanding EBL patterning to the third dimension by employing Two-Photon Polymerization (2PP). The nanofabricated structures rely on a combination of physical and chemical guiding of the microtubules through channels. Microtubules travelling through the network make their way through a number of different junctions. Here it is imperative that they do not take wrong turns. In order to decrease the usage of erroneous paths in the network a transition from planar 2-dimensional (mesh structure) networks to a design in which the crossing points of the mesh extend into the 3rd dimension is made. EBL is used to fabricate the 2D network structure whereas for the 3D-junctions 2PP is used. The good adaptation of the individual technologies allows for the possibility of a future combination of the two complementary approaches.
{"title":"Approach to combine electron-beam lithography and two-photon polymerization for enhanced nano-channels in network-based biocomputation devices","authors":"G. Heldt, C. Meinecke, S. Steenhusen, T. Korten, M. Gross, G. Domann, F. Lindberg, D. Reuter, S. Dietz, H. Linke, S. E. Schulz","doi":"10.1117/12.2326598","DOIUrl":"https://doi.org/10.1117/12.2326598","url":null,"abstract":"Although conventional computer technology made a huge leap forward in the past decade, a vast number of computational problems remain inaccessible due to their inherently complex nature. One solution to deal with this computational complexity is to highly parallelize computations and to explore new technologies beyond semiconductor computers. Here, we report on initial results leading to a device employing a biological computation approach called network-based biocomputation (NBC). So far, the manufacturing process relies on conventional Electron Beam Lithography (EBL). However we show first promising results expanding EBL patterning to the third dimension by employing Two-Photon Polymerization (2PP). The nanofabricated structures rely on a combination of physical and chemical guiding of the microtubules through channels. Microtubules travelling through the network make their way through a number of different junctions. Here it is imperative that they do not take wrong turns. In order to decrease the usage of erroneous paths in the network a transition from planar 2-dimensional (mesh structure) networks to a design in which the crossing points of the mesh extend into the 3rd dimension is made. EBL is used to fabricate the 2D network structure whereas for the 3D-junctions 2PP is used. The good adaptation of the individual technologies allows for the possibility of a future combination of the two complementary approaches.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115393356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The technical roadmap adopted by the semiconductor industry drives mask shops to embrace advanced solutions to overcome challenges inherent to smaller technology nodes while increasing reliability and turnaround time (TAT). It is observed that the TAT is increasing at a rapid rate for each new ground rule. At the same time, productivity and quality must be ensured to deliver the perfect mask to the customer. These challenges require optimization of overall manufacturing flows and individual steps, which can be addressed and improved via smart automation. Ideally, remote monitoring, controlling and adjusting key aspects of the production would improve labor efficiency and enhance productivity. It would require collecting and analyzing all available process data to facilitate or even automate decision-making steps. In mask shops, numerous areas of the back end of line (BEOL) workflow have room for improvement in regards to defect disposition, reducing human errors, standardizing recipe generation, data analysis and accessibility to useful and centralized information to support certain approaches such as repair. Adapting these aspects allows mask manufacturers to control and even predict the TAT that would lead to an optimized process of record.
{"title":"On the road to automated production workflows in the back end of line","authors":"Gilles Tabbone, K. Egodage, K. Schulz, A. Garetto","doi":"10.1117/12.2326908","DOIUrl":"https://doi.org/10.1117/12.2326908","url":null,"abstract":"The technical roadmap adopted by the semiconductor industry drives mask shops to embrace advanced solutions to overcome challenges inherent to smaller technology nodes while increasing reliability and turnaround time (TAT). It is observed that the TAT is increasing at a rapid rate for each new ground rule. At the same time, productivity and quality must be ensured to deliver the perfect mask to the customer. These challenges require optimization of overall manufacturing flows and individual steps, which can be addressed and improved via smart automation. Ideally, remote monitoring, controlling and adjusting key aspects of the production would improve labor efficiency and enhance productivity. It would require collecting and analyzing all available process data to facilitate or even automate decision-making steps. In mask shops, numerous areas of the back end of line (BEOL) workflow have room for improvement in regards to defect disposition, reducing human errors, standardizing recipe generation, data analysis and accessibility to useful and centralized information to support certain approaches such as repair. Adapting these aspects allows mask manufacturers to control and even predict the TAT that would lead to an optimized process of record.","PeriodicalId":287066,"journal":{"name":"European Mask and Lithography Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126764885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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