Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722661
Zhongmin Wen, T. Katayanagi, Y. Arai, H. Fujishiro, S. Seki
The results on the design and the measurement of a 5.8 GHz GaAs transmitter MMIC for electronic toll collection (ETC) system on-board equipment are presented. The MMIC of single chip and single supply without any external element is assembled into a 16-pin SSOP package. A novel drain-controlling modulation circuit is invented as a modulator to provide linear modulation. The measured adjacent channel power (ACP) is lower than -47 dBc. The on/off ratio of modulation is above 40 dB at 5.8 GHz under a random data modulation of 1.024 Mbps with Manchester coding.
{"title":"A 5.8 GHz transmitter MMIC for electronic toll collection system","authors":"Zhongmin Wen, T. Katayanagi, Y. Arai, H. Fujishiro, S. Seki","doi":"10.1109/GAAS.1998.722661","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722661","url":null,"abstract":"The results on the design and the measurement of a 5.8 GHz GaAs transmitter MMIC for electronic toll collection (ETC) system on-board equipment are presented. The MMIC of single chip and single supply without any external element is assembled into a 16-pin SSOP package. A novel drain-controlling modulation circuit is invented as a modulator to provide linear modulation. The measured adjacent channel power (ACP) is lower than -47 dBc. The on/off ratio of modulation is above 40 dB at 5.8 GHz under a random data modulation of 1.024 Mbps with Manchester coding.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125891061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722640
S. Nakajima, M. Yanagisawa, T. Sakurada
This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.
{"title":"The effect of MESFET structures on frequency dispersion of drain conductance and its impact on mark density effect of high speed logic ICs","authors":"S. Nakajima, M. Yanagisawa, T. Sakurada","doi":"10.1109/GAAS.1998.722640","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722640","url":null,"abstract":"This paper describes the effect of MESFET structures on frequency dispersion of drain conductance (g/sub d/). The frequency dispersion of g/sub d/ is found to be affected by gate length, buried p-layer concentration, n/sup +/ sheet resistance, and active layer thickness. Finally, we show that the device with small frequency dispersion of g/sub d/ can suppress the mark density effect of logic ICs.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127111041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722655
R. Menozzi, M. Borgarino, J. Tasselli, A. Marty
This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be efficiently and accurately achieved using a genetic algorithm (GA). The physical significance of the equivalent circuit parameters extracted by the GA is checked using a direct extraction technique (DET). For each point we obtained a good agreement between the parameters extracted by the DET and by the GA, which demonstrates the ability of the GA to efficiently extract a physically significant small-signal model.
{"title":"HBT small-signal model extraction using a genetic algorithm","authors":"R. Menozzi, M. Borgarino, J. Tasselli, A. Marty","doi":"10.1109/GAAS.1998.722655","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722655","url":null,"abstract":"This work shows that physically meaningful wideband, multi-bias small-signal modeling of HBTs can be efficiently and accurately achieved using a genetic algorithm (GA). The physical significance of the equivalent circuit parameters extracted by the GA is checked using a direct extraction technique (DET). For each point we obtained a good agreement between the parameters extracted by the DET and by the GA, which demonstrates the ability of the GA to efficiently extract a physically significant small-signal model.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129118711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722654
T. Low, C. Hutchinson, P. Canfield, T. Shirley, R. Yeats, J.S.C. Chang, G. Essilfie, M. Culver, W.C. Whiteley, D. D'Avanzo, N. Pan, J. Elliot, C. Lutz
A reliable high performance InGaP emitter HBT process has been developed for RF and microwave instruments. The InGaP process achieves Ft and Fmax values of 65 GHz and 75 GHz, respectively, with BVeeo=8.4 V and beta=132. The MTTF values of >5/spl times/10/sup 5/ hours at maximum operating conditions (Tj=150/spl deg/C, Jc=0.6 mA/um/sup 2/) are an order of magnitude larger than values measured on both internal and commercially available AlGaAs emitter HBT circuits. The dominant failure mode was beta drift, consistent with other published reports for other InGaP HBTs, but the Ea of 0.68 eV is much smaller than published values, which suggests that an additional high activation energy mechanism was introduced at the high temperatures used in the published reliability tests.
{"title":"Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability","authors":"T. Low, C. Hutchinson, P. Canfield, T. Shirley, R. Yeats, J.S.C. Chang, G. Essilfie, M. Culver, W.C. Whiteley, D. D'Avanzo, N. Pan, J. Elliot, C. Lutz","doi":"10.1109/GAAS.1998.722654","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722654","url":null,"abstract":"A reliable high performance InGaP emitter HBT process has been developed for RF and microwave instruments. The InGaP process achieves Ft and Fmax values of 65 GHz and 75 GHz, respectively, with BVeeo=8.4 V and beta=132. The MTTF values of >5/spl times/10/sup 5/ hours at maximum operating conditions (Tj=150/spl deg/C, Jc=0.6 mA/um/sup 2/) are an order of magnitude larger than values measured on both internal and commercially available AlGaAs emitter HBT circuits. The dominant failure mode was beta drift, consistent with other published reports for other InGaP HBTs, but the Ea of 0.68 eV is much smaller than published values, which suggests that an additional high activation energy mechanism was introduced at the high temperatures used in the published reliability tests.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131058286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722642
M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. A. Ahmari, M. Lui, R. Martinez, J. Duvall
We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any semiconductor technology. The divider was realized in a high yield optical lithography triple mesa HBT process. At maximum speed, power consumption was 40 mW/flip-flop. A second 1/8 divider, designed for lower power but using the same size transistors, consumed 8.6 mW/flip-flop at 35 GHz. Sensitivity was excellent with the high-speed version operating from DC to 48 GHz with less than 0 dBm input power. Uniformity and reproducibility were also demonstrated; all functional dividers operated above 45 GHz on-wafer and the extrapolated yield of dividers indicates that the process is capable of supporting 500-1000 transistor designs. Circuit performance was relatively insensitive to the details of the device epitaxial structure indicating a highly robust and manufacturable process.
{"title":"A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology","authors":"M. Sokolich, D. Docter, Y. Brown, A. Kramer, J. Jensen, W. Stanchina, S. Thomas, C. Fields, D. A. Ahmari, M. Lui, R. Martinez, J. Duvall","doi":"10.1109/GAAS.1998.722642","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722642","url":null,"abstract":"We have demonstrated a 52.9 GHz static 1/8 divider in an AlInAs/InGaAs HBT technology. To our knowledge this is the fastest static divider reported in any semiconductor technology. The divider was realized in a high yield optical lithography triple mesa HBT process. At maximum speed, power consumption was 40 mW/flip-flop. A second 1/8 divider, designed for lower power but using the same size transistors, consumed 8.6 mW/flip-flop at 35 GHz. Sensitivity was excellent with the high-speed version operating from DC to 48 GHz with less than 0 dBm input power. Uniformity and reproducibility were also demonstrated; all functional dividers operated above 45 GHz on-wafer and the extrapolated yield of dividers indicates that the process is capable of supporting 500-1000 transistor designs. Circuit performance was relatively insensitive to the details of the device epitaxial structure indicating a highly robust and manufacturable process.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126027229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/gaas.1998.722622
Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu
This paper presents the recent progress of 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-/spl mu/m InP HEMT ICs and new optical devices operating at 40 Gbit/s and beyond. System experiments demonstrate that the 40-Gbit/s TDM system is very attractive for upgrading transmission capacity into the Tbit/s range.
本文介绍了基于0.1-/spl μ m InP HEMT集成电路的40 Gbit/s时分复用(TDM)传输技术的最新进展，以及工作在40 Gbit/s及以上的新型光器件。系统实验表明，40 gbit /s时分复用系统对于将传输容量提升到Tbit/s范围具有很大的吸引力。
{"title":"40-Gbit/s TDM transmission technologies based on high-speed ICs","authors":"Y. Miyamoto, M. Yoneyama, T. Otsuji, K. Yonenaga, N. Shimizu","doi":"10.1109/gaas.1998.722622","DOIUrl":"https://doi.org/10.1109/gaas.1998.722622","url":null,"abstract":"This paper presents the recent progress of 40-Gbit/s time division multiplexing (TDM) transmission technologies based on 0.1-/spl mu/m InP HEMT ICs and new optical devices operating at 40 Gbit/s and beyond. System experiments demonstrate that the 40-Gbit/s TDM system is very attractive for upgrading transmission capacity into the Tbit/s range.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116250435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722659
T. Kunihisa, S. Yamamoto, M. Nishijima, T. Yokoyama, M. Nishitsuji, K. Nishii, O. Ishikawa
A power MMIC operating with a single-supply (3.0 V) has been developed for 5.8 GHz Japanese electronic toll collection system (ETC). The present MMIC was provided with two FETs, matching circuits (input, intermediate and output matching circuits), and two drain bias circuits. High dielectric constant material SrTiO/sub 3/ (STO) is used for by-pass and coupling capacitors. Very small die size of 0.77 mm/sup 2/ has been realized by using the STO capacitors. High 1 dB output power compression point (P/sub 1dB/) of 13 dBm, high gain of 21.4 dB and low dissipation current of 41.3 mA have been achieved under 3.0 V single-supply condition.
{"title":"A 5.8 GHz, 3.0 V single-supply power MMIC for electronic toll collection system","authors":"T. Kunihisa, S. Yamamoto, M. Nishijima, T. Yokoyama, M. Nishitsuji, K. Nishii, O. Ishikawa","doi":"10.1109/GAAS.1998.722659","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722659","url":null,"abstract":"A power MMIC operating with a single-supply (3.0 V) has been developed for 5.8 GHz Japanese electronic toll collection system (ETC). The present MMIC was provided with two FETs, matching circuits (input, intermediate and output matching circuits), and two drain bias circuits. High dielectric constant material SrTiO/sub 3/ (STO) is used for by-pass and coupling capacitors. Very small die size of 0.77 mm/sup 2/ has been realized by using the STO capacitors. High 1 dB output power compression point (P/sub 1dB/) of 13 dBm, high gain of 21.4 dB and low dissipation current of 41.3 mA have been achieved under 3.0 V single-supply condition.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125964087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722607
E. Strid
The Semiconductor Industry Association (SIA), The Institute for Interconnecting and Packaging Electronic Circuits (IPC), and the National Electronics Manufacturing Initiative (NEMI) have expanded US industry-wide consensus efforts to chart out the futures of everything from semiconductor lithography to factory automation technologies, including the first draft of a roadmap for RF components in the 1996 NEMI work. This paper reviews recent RF industry practice in the areas of RFIC on-wafer and package testing, and predicts future trends in RFIC production testing. The testing and packaging issues for GaAs IC's are substantially the same as for Si IC's operating in the same frequency range and function. So while it is unlikely that there will be any inherent differential packaging or test advantages of GaAs over Si, it is similarly imperative to stay on or ahead of the industry roadmap to be competitive with the latest packaging and test technologies.
{"title":"Roadmapping RFIC test","authors":"E. Strid","doi":"10.1109/GAAS.1998.722607","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722607","url":null,"abstract":"The Semiconductor Industry Association (SIA), The Institute for Interconnecting and Packaging Electronic Circuits (IPC), and the National Electronics Manufacturing Initiative (NEMI) have expanded US industry-wide consensus efforts to chart out the futures of everything from semiconductor lithography to factory automation technologies, including the first draft of a roadmap for RF components in the 1996 NEMI work. This paper reviews recent RF industry practice in the areas of RFIC on-wafer and package testing, and predicts future trends in RFIC production testing. The testing and packaging issues for GaAs IC's are substantially the same as for Si IC's operating in the same frequency range and function. So while it is unlikely that there will be any inherent differential packaging or test advantages of GaAs over Si, it is similarly imperative to stay on or ahead of the industry roadmap to be competitive with the latest packaging and test technologies.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123811878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722650
K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit
This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.
{"title":"A 6.45 GHz active bandpass filter using HBT negative resistance elements","authors":"K. Kobayashi, L. Tran, D. Umemoto, A. Oki, D. Streit","doi":"10.1109/GAAS.1998.722650","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722650","url":null,"abstract":"This paper reports on a 4th order HBT active bandpass filter based on a conservative 2-/spl mu/m GaAs HBT technology which possesses f/sub T/'s and f/sub max/'s of 24 GHz and 50 GHz, respectively. The MMIC operates at a center frequency of 6.45 GHz with a +0.25 dB insertion gain and a 1100 MHz -3 dB bandwidth. A lower-out-of-band rejection of -45 to SO dB is also obtained. The measured NF and input IP3 are 15.1 dB and -7.9 dBm, respectively. The corresponding P/sub 1db/ is -5 dBm. The compact 4th order bandpass filter MMIC is only 1.6/spl times/1.2 mm/sup 2/ and consumes 208 mW of dc power. This work represents the first fully RF (NF, IP3, P/sub 1dB/) characterized HBT MMIC active filter results so far reported. We believe that the HBT active filter MMIC design demonstrates compact size and feasible RF performance suitable for monolithically integrated DDFS, ADC anti-alias, and harmonic filter applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127181119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722686
R. Nakai, Y. Hagi, S. Kawarabayashi, N. Toyoda, M. Kiyama, S. Sawada, N. Kuwata, S. Nakajima
The vertical boat (VB) method has advantages in the growth of substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low residual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. FETs fabricated on carbon doped high resistivity VB substrates show high breakdown voltage. Vth was stable at higher drain voltages. Six inch GaAs crystals are also grown by VB and show adequate characteristics.
{"title":"Manufacturing large diameter GaAs substrates for epitaxial devices by VB method","authors":"R. Nakai, Y. Hagi, S. Kawarabayashi, N. Toyoda, M. Kiyama, S. Sawada, N. Kuwata, S. Nakajima","doi":"10.1109/GAAS.1998.722686","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722686","url":null,"abstract":"The vertical boat (VB) method has advantages in the growth of substrates for epitaxial devices. Low residual strain and low dislocation four inch GaAs crystals are manufactured with good reproducibility. Low residual strain reduces slip line occurrence and low dislocation density enables growth of low defects in epitaxial layers. FETs fabricated on carbon doped high resistivity VB substrates show high breakdown voltage. Vth was stable at higher drain voltages. Six inch GaAs crystals are also grown by VB and show adequate characteristics.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116870287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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