Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722634
R. Mallavarpu, D. Teeter, M. Snow
A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.
{"title":"The importance of gate charge formulation in large-signal PHEMT modeling","authors":"R. Mallavarpu, D. Teeter, M. Snow","doi":"10.1109/GAAS.1998.722634","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722634","url":null,"abstract":"A critical step in developing accurate large signal PHEMT models is the equation used for the gate charge. This paper examines three types of gate charge formulations. Measured versus modeled results at 2, 8 and 16 GHz clearly demonstrate that a two terminal voltage dependent gate charge model provides the best prediction of all the parameters measured, namely : output power, PAE, drain current, harmonic power, and 3rd order intermodulation distortion products Ga.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117018370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722658
S. M. Frimel, K. Roenker, W. Stanchina, H. Sun
The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.
{"title":"High performance InP-based phototransistors for long wavelength, HBT-based optical receivers","authors":"S. M. Frimel, K. Roenker, W. Stanchina, H. Sun","doi":"10.1109/GAAS.1998.722658","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722658","url":null,"abstract":"The performance of InAlAs/InGaAs heterojunction bipolar phototransistors (HBTs) has been studied in order to develop improved photodetectors for use in long wavelength optical receivers based on heterojunction bipolar transistors (HBTs). This paper presents experimental results for devices operated with a base bias and with frontside optical injection through the emitter demonstrating the device's high optical gain (30) and high frequency performance capabilities (f/sub r/=50 GHz). The results demonstrate that the HBT is an attractive alternative to the PIN photodetector for use in HBT-based optical receivers.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126577954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722667
V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin
This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.
{"title":"X-band heterostructure interband tunneling FET (HITFET) VCOs","authors":"V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin","doi":"10.1109/GAAS.1998.722667","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722667","url":null,"abstract":"This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114801697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722677
D. Meharry
A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.
{"title":"Multi-octave transformer coupled differential amplifier for high dynamic range","authors":"D. Meharry","doi":"10.1109/GAAS.1998.722677","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722677","url":null,"abstract":"A novel PHEMT MMIC broadband amplifier circuit has been developed which has extremely high dynamic range, as characterized by its second order distortion products. Amplifier small signal bandwidth is 4 to 16 GHz. Measured OIP2 of this circuit exceeds 60 dBm with a 1 dB compression point of approximately 5 dBm. This circuit outperforms a conventional amplifier, fabricated on the same wafer, by more than 30 dB. Because it utilizes a combination of two circuit techniques, the approach can be applied to different device technologies, for optimization of noise figure or other performance parameters.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129321515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722626
A. Thiede, Z. Lao, H. Lienhart, M. Sedler, J. Seibel, J. Hornung, J. Schneider, G. Kaufel, W. Bronner, K. Kohler, T. Jakobus, M. Schlechtweg
A 16/spl times/16 bit parallel multiplier based on a 26 k sea-of-gates has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as well as three levels of gold metallization for high integration complexity. To prove the high speed performance, a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.
{"title":"LSI capability demonstration of an 0.15 /spl mu/m-0.3 /spl mu/m GaAs HEMT and PM-HEMT 3 level metallization E/D-technology for mixed signal circuits","authors":"A. Thiede, Z. Lao, H. Lienhart, M. Sedler, J. Seibel, J. Hornung, J. Schneider, G. Kaufel, W. Bronner, K. Kohler, T. Jakobus, M. Schlechtweg","doi":"10.1109/GAAS.1998.722626","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722626","url":null,"abstract":"A 16/spl times/16 bit parallel multiplier based on a 26 k sea-of-gates has been fabricated successfully to demonstrate the LSI capability of our mixed signal IC technology including pseudomorphic T-gate HEMTs for high speed as well as three levels of gold metallization for high integration complexity. To prove the high speed performance, a digital dynamic frequency divider operating in a frequency band from about 36 GHz up to almost 60 GHz has been realised.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126171238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722629
A. Adar, J. DeMoura, H. Balshem, J. Lott
In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.
{"title":"A high efficiency single chain GaAs MESFET MMIC dual band power amplifier for GSM/DCS handsets","authors":"A. Adar, J. DeMoura, H. Balshem, J. Lott","doi":"10.1109/GAAS.1998.722629","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722629","url":null,"abstract":"In this paper, we describe the development of a single chain dual band power amplifier for GSM900/1800 applications. RFIC features include: single input-single output topology, three stages of amplification, switched input and inter-stage matching, positive power control, and negative voltage generation. The chip is fabricated using a high volume ion-implanted 0.5 /spl mu/m GaAs MESFET process and is assembled in a low cost, thermally enhanced SSOP16 plastic package. Typical performance, at +4.8 volts in GSM and DCS bands, is 48% PAE at Pout=+35 dBm and 44% PAE at Pout =+32.5 dBm respectively.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123950454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722647
C. Trantanella, M. Shifrin, B. Bedard
Two new plastic encapsulated passive mixers operating in the C- and X-bands are presented in this paper. One mixer is a narrowband design, covering the 4.5 to 6 GHz range, while the other mixer is broadband, covering 4.5 to 9 GHz. The narrowband/broadband mixers feature a conversion loss of 6/8 dB, an LO to RF isolation of 30/20 dB, and an IF frequency response out to 1.6/2.5 GHz. These designs are the first reported realizations of plastic encapsulated, passive mixers operating in the C/X-bands.
{"title":"Low cost, plastic encapsulated mixers for C/X-band applications","authors":"C. Trantanella, M. Shifrin, B. Bedard","doi":"10.1109/GAAS.1998.722647","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722647","url":null,"abstract":"Two new plastic encapsulated passive mixers operating in the C- and X-bands are presented in this paper. One mixer is a narrowband design, covering the 4.5 to 6 GHz range, while the other mixer is broadband, covering 4.5 to 9 GHz. The narrowband/broadband mixers feature a conversion loss of 6/8 dB, an LO to RF isolation of 30/20 dB, and an IF frequency response out to 1.6/2.5 GHz. These designs are the first reported realizations of plastic encapsulated, passive mixers operating in the C/X-bands.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123371687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722652
D. Hill
This paper describes the status of HBT technology for applications at 12 V and above. Design and process considerations for fabrication of HBTs with high breakdown voltage are discussed, along with a general approach for reduced thermal resistance. Current understanding of high-voltage HBT reliability and market outlook are reviewed.
{"title":"High-voltage HBT technology","authors":"D. Hill","doi":"10.1109/GAAS.1998.722652","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722652","url":null,"abstract":"This paper describes the status of HBT technology for applications at 12 V and above. Design and process considerations for fabrication of HBTs with high breakdown voltage are discussed, along with a general approach for reduced thermal resistance. Current understanding of high-voltage HBT reliability and market outlook are reviewed.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130982941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722613
K. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, M. Nishimoto, J. Elliott, A. Oki, D.C. Strelt
This paper reports on what is believed to be the highest IP3/P/sub DC/ power linearity figure of merit (LFOM) achieved from a MMIC amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP HBT technology with f/sub T/s and f/sub max/s of 70 GHz and 200 GHz respectively. The single stage design consists of four pre-matched 1/spl times/10 /spl mu/m/sup 2/ four-finger HBT cells combined in parallel which consumes 48 mA of current through a 2.5 V supply. At this bias, the amplifier obtains a gain of 5.5-6 dB over a 44-50 GHz frequency band and achieves a peak gain of 6.8-7.6 dB under a bias current of 80 mA. At the low bias current of 48 mA and a total DC power of 120 mW, the amplifier obtains a peak IP3 of 34 dBm at 42 GHz which corresponds to a record IP3/P/sub DC/ power ratio of 21:1, a factor of 2 better than the state-of-the-art MMCs reported in this frequency range. The IP3 characteristics of the 44 GHz amplifier also indicate that the maximum IP3 and optimum 1P3/P/sub DC/ LFOM both occur at lower V/sub ce/'s for low current density operation, enabling the high LFOM. These characteristics make InP HBTs attractive for low power MM-wave receiver applications.
{"title":"High IP3-low DC power 44 GHz InP-HBT amplifier","authors":"K. Kobayashi, J. Cowles, L. Tran, A. Gutierrez-Aitken, M. Nishimoto, J. Elliott, A. Oki, D.C. Strelt","doi":"10.1109/GAAS.1998.722613","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722613","url":null,"abstract":"This paper reports on what is believed to be the highest IP3/P/sub DC/ power linearity figure of merit (LFOM) achieved from a MMIC amplifier at millimeter-wave frequencies. The 44 GHz amplifier is based on an InP HBT technology with f/sub T/s and f/sub max/s of 70 GHz and 200 GHz respectively. The single stage design consists of four pre-matched 1/spl times/10 /spl mu/m/sup 2/ four-finger HBT cells combined in parallel which consumes 48 mA of current through a 2.5 V supply. At this bias, the amplifier obtains a gain of 5.5-6 dB over a 44-50 GHz frequency band and achieves a peak gain of 6.8-7.6 dB under a bias current of 80 mA. At the low bias current of 48 mA and a total DC power of 120 mW, the amplifier obtains a peak IP3 of 34 dBm at 42 GHz which corresponds to a record IP3/P/sub DC/ power ratio of 21:1, a factor of 2 better than the state-of-the-art MMCs reported in this frequency range. The IP3 characteristics of the 44 GHz amplifier also indicate that the maximum IP3 and optimum 1P3/P/sub DC/ LFOM both occur at lower V/sub ce/'s for low current density operation, enabling the high LFOM. These characteristics make InP HBTs attractive for low power MM-wave receiver applications.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124102879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-11-01DOI: 10.1109/GAAS.1998.722619
J. Komiak, W. Kong, P. Chao, K. Nichols
The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.
{"title":"3 watt Ka-band MMIC HPA and driver amplifier implemented in a fully selective 0.15 /spl mu/m power PHEMT process","authors":"J. Komiak, W. Kong, P. Chao, K. Nichols","doi":"10.1109/GAAS.1998.722619","DOIUrl":"https://doi.org/10.1109/GAAS.1998.722619","url":null,"abstract":"The design and performance of a 0.15 um gate length fully selective recess PHEMT power amplifier that has established a new benchmark for Ka-band power is reported. The amplifiers average >3 watts at 30% PAE with 13 dB of power gain at 30 GHz, with a 1 dB gain compression output power of >2.5 watts. The P1dB output power is 2.5 times the best previously reported result for Ka-band MMIC power amplifiers. A 0.5 watt at P1dB driver amplifier is also described.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"196 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116786210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：