Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791620
E. Goldys, M. Godlewski, K. Drozdowicz-Tomsia, R. Langer, A. Baraki
We examine the proposition that mid-gap broad cathodoluminescence emission spectra of cubic and wurtzite GaN centered at 1.9 eV (red) and 2.2 eV (yellow) respectively are of similar origin. At high excitation levels, the red band shows a small blue shift comparable with the shallow-donor/deep-acceptor pair (DAP) recombination path proposed for the yellow band. The temperature dependence of peak energy supports this view, while band width and symmetry properties suggest that at least one of the defects in the DAP emission is strongly coupled to the lattice. Photoluminescence data point to donor and acceptor ionisation energies of about 15 meV and 100 meV respectively in the cubic phase. Energy dependence of emission decay times and peak energy migration are also indicative of DAP process. Finally we observe differences in surface micromorphology, flat and tesselated in cubic GaN and granulated in the wurtzite layers. Excitonic emission is suppressed at grain boundaries in both cases, while the respective red and yellow emission maps show little correlation with morphology.
{"title":"Optical emission bands in cubic GaN grown by MBE","authors":"E. Goldys, M. Godlewski, K. Drozdowicz-Tomsia, R. Langer, A. Baraki","doi":"10.1109/COMMAD.1998.791620","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791620","url":null,"abstract":"We examine the proposition that mid-gap broad cathodoluminescence emission spectra of cubic and wurtzite GaN centered at 1.9 eV (red) and 2.2 eV (yellow) respectively are of similar origin. At high excitation levels, the red band shows a small blue shift comparable with the shallow-donor/deep-acceptor pair (DAP) recombination path proposed for the yellow band. The temperature dependence of peak energy supports this view, while band width and symmetry properties suggest that at least one of the defects in the DAP emission is strongly coupled to the lattice. Photoluminescence data point to donor and acceptor ionisation energies of about 15 meV and 100 meV respectively in the cubic phase. Energy dependence of emission decay times and peak energy migration are also indicative of DAP process. Finally we observe differences in surface micromorphology, flat and tesselated in cubic GaN and granulated in the wurtzite layers. Excitonic emission is suppressed at grain boundaries in both cases, while the respective red and yellow emission maps show little correlation with morphology.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116774718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791688
W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan
High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.
{"title":"High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT","authors":"W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan","doi":"10.1109/COMMAD.1998.791688","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791688","url":null,"abstract":"High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123597412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791594
X. Liao, J. Zou, X. Duan, D. Cockayne, R. Leon, C. Lobo
Investigation of the morphology of buried and unburied In/sub x/Ga/sub 1-x/As/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped.
{"title":"Transmission electron microscopy determination of quantum dot profile","authors":"X. Liao, J. Zou, X. Duan, D. Cockayne, R. Leon, C. Lobo","doi":"10.1109/COMMAD.1998.791594","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791594","url":null,"abstract":"Investigation of the morphology of buried and unburied In/sub x/Ga/sub 1-x/As/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130203080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791674
T. Tsuzuki, P. Nakashima, P. McCormick
The synthesis of II-VI semiconductor nanoparticles by mechanochemical reaction has been reviewed. Solid-state displacement reactions between ZnCl/sub 2/ or CdCl/sub 2/ and alkali or alkaline earth chalcogenides were induced during mechanical milling in a steady-state manner, leading to the formation of II-VI semiconductor nanoparticles in a chloride salt matrix. A simple washing process employed to remove the chloride byproduct resulted in separated particles of less than 10 nm. The resulting particles and crystallite sizes were controlled by changing the milling conditions, starting materials, annealing temperature and the presence of a diluent. With decreasing particle size, the band-gap energy and plasmon peak energy of CdS increased due to the quantum confinement effect.
{"title":"Synthesis of II-VI semiconductor nanoparticles by mechanochemical processing","authors":"T. Tsuzuki, P. Nakashima, P. McCormick","doi":"10.1109/COMMAD.1998.791674","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791674","url":null,"abstract":"The synthesis of II-VI semiconductor nanoparticles by mechanochemical reaction has been reviewed. Solid-state displacement reactions between ZnCl/sub 2/ or CdCl/sub 2/ and alkali or alkaline earth chalcogenides were induced during mechanical milling in a steady-state manner, leading to the formation of II-VI semiconductor nanoparticles in a chloride salt matrix. A simple washing process employed to remove the chloride byproduct resulted in separated particles of less than 10 nm. The resulting particles and crystallite sizes were controlled by changing the milling conditions, starting materials, annealing temperature and the presence of a diluent. With decreasing particle size, the band-gap energy and plasmon peak energy of CdS increased due to the quantum confinement effect.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129245883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791697
O. Schwelb
Simulated performance characteristics of reciprocal photonic networks comprised of 2/spl times/2 couplers, gratings, partially reflecting mirrors, waveguides and facet discontinuities are reported. The simulations are based on generalized scattering matrix analysis using the concept of a universal coupler.
{"title":"Performance characteristics of interferometric lattice networks","authors":"O. Schwelb","doi":"10.1109/COMMAD.1998.791697","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791697","url":null,"abstract":"Simulated performance characteristics of reciprocal photonic networks comprised of 2/spl times/2 couplers, gratings, partially reflecting mirrors, waveguides and facet discontinuities are reported. The simulations are based on generalized scattering matrix analysis using the concept of a universal coupler.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129512628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791612
F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken
Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).
{"title":"Progress in reactive ion etching of epitaxial GaN","authors":"F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken","doi":"10.1109/COMMAD.1998.791612","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791612","url":null,"abstract":"Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121138031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791619
H. Zuo, M. J. Paterson, E. Goldys, T. Tansley, Afifuddin
Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
{"title":"Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs","authors":"H. Zuo, M. J. Paterson, E. Goldys, T. Tansley, Afifuddin","doi":"10.1109/COMMAD.1998.791619","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791619","url":null,"abstract":"Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121175207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791677
C. Domoto, N. Ohtani, P. Vaccaro
We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.
{"title":"Photoluminescence from higher-subbands of GaAs/AlAs superlattices","authors":"C. Domoto, N. Ohtani, P. Vaccaro","doi":"10.1109/COMMAD.1998.791677","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791677","url":null,"abstract":"We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115569848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791687
W. Liu, H. Pan, W. Chang, K. Yu, S. Feng, J. Yan
A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped /spl delta/(p/sup +/)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f/sub T/) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.
{"title":"A high-barrier gate and tri-step doped channel transistor","authors":"W. Liu, H. Pan, W. Chang, K. Yu, S. Feng, J. Yan","doi":"10.1109/COMMAD.1998.791687","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791687","url":null,"abstract":"A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped /spl delta/(p/sup +/)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f/sub T/) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"149 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123255334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791684
S. Lachowicz, K. Eshraghian, J.F. Lopez
Recent developments in multimedia computing and communications have lead to rapid increase in performance requirements for the underlying VLSI technology which manifests itself in the development of new semiconductor materials as well as refinements in the existing ones. Not only are the circuits required to operate faster and dissipate less power, especially for portable applications, but integration of optics, i.e. image display and light detection functionality together with sophisticated signal processing in one chip becomes now a necessity and reality at the same time. The concept of personal interactive mobile multimedia communicators (M/sup 3/C) has lead to the idea of an intelligent pixel (IP) array which is effectively a video camera, a miniature display screen, and an advanced DSP processor in one device. For ultra-fast systems a considerable part of power is dissipated within a clock generation and distribution system. At the same time, at Gigahertz frequencies the clock skew becomes the factor limiting the speed of the system. This paper presents an outline of the intelligent pixel architecture and presents a detailed design methodology for highly pipelined, self-timed systems suitable for multimedia applications using Gallium Arsenide MESFET as the base technology implementation of latched logic design style (PDLL, LCFL). The use of latched logic together with the absence of the global clock provides for low power dissipation while maintaining very high speed of the system.
{"title":"Gallium arsenide technology for low-power, high performance processor cores","authors":"S. Lachowicz, K. Eshraghian, J.F. Lopez","doi":"10.1109/COMMAD.1998.791684","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791684","url":null,"abstract":"Recent developments in multimedia computing and communications have lead to rapid increase in performance requirements for the underlying VLSI technology which manifests itself in the development of new semiconductor materials as well as refinements in the existing ones. Not only are the circuits required to operate faster and dissipate less power, especially for portable applications, but integration of optics, i.e. image display and light detection functionality together with sophisticated signal processing in one chip becomes now a necessity and reality at the same time. The concept of personal interactive mobile multimedia communicators (M/sup 3/C) has lead to the idea of an intelligent pixel (IP) array which is effectively a video camera, a miniature display screen, and an advanced DSP processor in one device. For ultra-fast systems a considerable part of power is dissipated within a clock generation and distribution system. At the same time, at Gigahertz frequencies the clock skew becomes the factor limiting the speed of the system. This paper presents an outline of the intelligent pixel architecture and presents a detailed design methodology for highly pipelined, self-timed systems suitable for multimedia applications using Gallium Arsenide MESFET as the base technology implementation of latched logic design style (PDLL, LCFL). The use of latched logic together with the absence of the global clock provides for low power dissipation while maintaining very high speed of the system.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114265833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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