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1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)最新文献

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Optical emission bands in cubic GaN grown by MBE MBE生长的立方氮化镓的光学发射带
E. Goldys, M. Godlewski, K. Drozdowicz-Tomsia, R. Langer, A. Baraki
We examine the proposition that mid-gap broad cathodoluminescence emission spectra of cubic and wurtzite GaN centered at 1.9 eV (red) and 2.2 eV (yellow) respectively are of similar origin. At high excitation levels, the red band shows a small blue shift comparable with the shallow-donor/deep-acceptor pair (DAP) recombination path proposed for the yellow band. The temperature dependence of peak energy supports this view, while band width and symmetry properties suggest that at least one of the defects in the DAP emission is strongly coupled to the lattice. Photoluminescence data point to donor and acceptor ionisation energies of about 15 meV and 100 meV respectively in the cubic phase. Energy dependence of emission decay times and peak energy migration are also indicative of DAP process. Finally we observe differences in surface micromorphology, flat and tesselated in cubic GaN and granulated in the wurtzite layers. Excitonic emission is suppressed at grain boundaries in both cases, while the respective red and yellow emission maps show little correlation with morphology.
我们研究了立方体GaN和纤锌矿GaN的中隙宽阴极发光发射光谱,它们的中心分别为1.9 eV(红色)和2.2 eV(黄色),来源相似。在高激发水平下,红带显示出一个小的蓝移,与黄带提出的浅给体/深受体对(DAP)重组路径相当。峰值能量的温度依赖性支持这一观点,而能带宽度和对称性表明,DAP发射中至少有一个缺陷与晶格强耦合。光致发光数据表明,在立方相中,供体和受体的电离能分别约为15 meV和100 meV。发射衰减时间的能量依赖性和峰值能量迁移也表明了DAP过程。最后,我们观察到表面微观形态的差异,在立方氮化镓中是扁平的和镶嵌的,在纤锌矿层中是粒状的。在这两种情况下,激子发射在晶界处被抑制,而各自的红色和黄色发射图与形貌的相关性很小。
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引用次数: 0
High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT 高击穿、高线性Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As伪晶HEMT
W. Liu, W. Chang, J.Y. Chen, K. Yu, S. Feng, J. Yan
High-breakdown and high-linearity Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMTs have been fabricated successfully and demonstrated. A extremely high gate-to-drain breakdown voltage of 40 V is obtained by using a wide-gap Ga/sub 0.51/In/sub 0.49/P Schottky contact layer. For a 1 /spl mu/m-gate length device, the transconductance and output current density at room temperature are 90 mS/mm and 646 mA/mm, respectively. The measured f/sub T/ and f/sub max/ are 12 and 28.4 GHz, respectively. Therefore, the studied device shows a promise for microwave power applications.
成功制备了高击穿、高线性度的Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As伪晶hemt。采用宽间隙Ga/sub 0.51/In/sub 0.49/P肖特基接触层可获得40 V的极高门极漏击穿电压。对于1 /spl mu/m栅极长度器件,室温下的跨导和输出电流密度分别为90 mS/mm和646 mA/mm。测得的f/sub T/和f/sub max/分别为12 GHz和28.4 GHz。因此,所研究的器件在微波功率应用中具有广阔的前景。
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引用次数: 0
Transmission electron microscopy determination of quantum dot profile 透射电子显微镜测定量子点轮廓
X. Liao, J. Zou, X. Duan, D. Cockayne, R. Leon, C. Lobo
Investigation of the morphology of buried and unburied In/sub x/Ga/sub 1-x/As/GaAs quantum dots (QDs) has been carried out using cross-section transmission microscopy and the [001] on-zone bright-field technique with image simulation. The study shows that both the buried and unburied QDs are lens-shaped.
利用截面透射显微镜和[001]区上亮场成像模拟技术,研究了埋藏和未埋藏In/sub x/Ga/sub 1-x/As/GaAs量子点(QDs)的形貌。研究表明,埋地和未埋地的量子点均呈透镜状。
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引用次数: 1
Synthesis of II-VI semiconductor nanoparticles by mechanochemical processing 机械化学法合成II-VI型半导体纳米颗粒
T. Tsuzuki, P. Nakashima, P. McCormick
The synthesis of II-VI semiconductor nanoparticles by mechanochemical reaction has been reviewed. Solid-state displacement reactions between ZnCl/sub 2/ or CdCl/sub 2/ and alkali or alkaline earth chalcogenides were induced during mechanical milling in a steady-state manner, leading to the formation of II-VI semiconductor nanoparticles in a chloride salt matrix. A simple washing process employed to remove the chloride byproduct resulted in separated particles of less than 10 nm. The resulting particles and crystallite sizes were controlled by changing the milling conditions, starting materials, annealing temperature and the presence of a diluent. With decreasing particle size, the band-gap energy and plasmon peak energy of CdS increased due to the quantum confinement effect.
综述了机械化学反应合成II-VI型半导体纳米颗粒的研究进展。在机械磨矿过程中,以稳态方式诱导ZnCl/sub - 2/或CdCl/sub - 2/与碱或碱土硫族化合物发生固态位移反应,在氯盐基质中形成II-VI型半导体纳米颗粒。采用简单的洗涤过程去除氯副产物,分离出的颗粒小于10纳米。通过改变研磨条件、起始材料、退火温度和稀释剂的存在来控制所得颗粒和晶粒尺寸。随着粒子尺寸的减小,由于量子约束效应,CdS的带隙能量和等离子体峰值能量增加。
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引用次数: 4
Performance characteristics of interferometric lattice networks 干涉测量晶格网络的性能特征
O. Schwelb
Simulated performance characteristics of reciprocal photonic networks comprised of 2/spl times/2 couplers, gratings, partially reflecting mirrors, waveguides and facet discontinuities are reported. The simulations are based on generalized scattering matrix analysis using the concept of a universal coupler.
报告了由 2/spl times/2 光电耦合器、光栅、部分反射镜、波导和切面不连续性组成的互惠光子网络的模拟性能特征。模拟基于使用通用耦合器概念的广义散射矩阵分析。
{"title":"Performance characteristics of interferometric lattice networks","authors":"O. Schwelb","doi":"10.1109/COMMAD.1998.791697","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791697","url":null,"abstract":"Simulated performance characteristics of reciprocal photonic networks comprised of 2/spl times/2 couplers, gratings, partially reflecting mirrors, waveguides and facet discontinuities are reported. The simulations are based on generalized scattering matrix analysis using the concept of a universal coupler.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129512628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Progress in reactive ion etching of epitaxial GaN 外延GaN反应离子刻蚀研究进展
F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken
Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).
采用SiCl/sub - 4/、Ar和SF/sub - 6/等不同的化学物质,研究了在(0001)蓝宝石衬底上外延生长GaN的反应离子刻蚀(RIE)。等离子沉积的SiN/sub x/用于掩蔽。研究了气体流量、压力和射频功率对蚀刻速率和形貌的影响。在370伏加速电压下,使用SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm)可获得高达150 nm/min的高蚀刻速率。使用相同的化学方法,在105瓦的较低rf功率(直流偏置为/spl plusmn/290 V)下获得了非常光滑的表面和良好的蚀刻速率(/spl plusmn/100 nm/min)。
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引用次数: 0
Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs 激光辅助金属有机化学气相沉积镁掺杂氮化镓在硅,蓝宝石和砷化镓
H. Zuo, M. J. Paterson, E. Goldys, T. Tansley, Afifuddin
Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600/spl deg/C. The hole mobilities obtained are up to 40 cm/sup 2/ V/sup -1/ s/sup -1/ at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature.
利用激光诱导的金属有机化学气相沉积技术,在600℃的低温下制备了用于紫外光电探测器的Mg掺杂p型GaN薄膜。在室温下获得的空穴迁移率高达40 cm/sup 2/ V/sup -1/ s/sup -1/,无需任何生长后处理,具有丰富的光致发光光谱。在低温下观察到2.95 eV、2.6 eV和2.2 eV的三个主峰,只有2.6和2.2 eV的主峰在室温下存在。
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引用次数: 0
Photoluminescence from higher-subbands of GaAs/AlAs superlattices GaAs/AlAs超晶格高亚带的光致发光
C. Domoto, N. Ohtani, P. Vaccaro
We have observed photoluminescence (PL) from higher subbands of GaAs/AlAs superlattices (SLs). Electrons are injected into the higher subbands due to /spl Gamma/1(+1)-/spl Gamma/3(0) and X1(+1/2)-/spl Gamma/3(0) resonance. The intensity of /spl Gamma/3-hh1 PL due to X1(+1/2)-/spl Gamma/3(0) resonance is found to be approximately two times stronger than that due to /spl Gamma/1(+1)-/spl Gamma/3(0) resonance. From this finding, the X subband confined in the AlAs barrier layer is a more promising candidate for injecting an amount of electrons into the higher subbands than the /spl Gamma/ subband, and we believe that it is suitable for achieving a simple Quantum Cascade laser structure.
我们从GaAs/AlAs超晶格(SLs)的高亚带观察到光致发光(PL)。由于/spl Gamma/1(+1)-/spl Gamma/3(0)和X1(+1/2)-/spl Gamma/3(0)共振,电子被注入到更高的子带。由X1(+1/2)-/spl Gamma/3(0)共振引起的/spl Gamma/3-hh1 PL的强度大约是由/spl Gamma/1(+1)-/spl Gamma/3(0)共振引起的强度的两倍。根据这一发现,限制在AlAs势垒层中的X子带比/spl Gamma/子带更有希望向更高的子带注入一定量的电子,并且我们认为它适合实现简单的量子级联激光器结构。
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引用次数: 0
A high-barrier gate and tri-step doped channel transistor 一种高势垒栅极三阶掺杂沟道晶体管
W. Liu, H. Pan, W. Chang, K. Yu, S. Feng, J. Yan
A new GaInP/GaAs high-barrier gate and tri-step doped channel heterostructure field-effect transistor (HFET) has been successfully fabricated and demonstrated. A very thin and heavily doped /spl delta/(p/sup +/)-GaInP layer is introduced to increase the high gate turn-on and breakdown voltage and reduce the gate leakage current. A low-medium-high tri-step doped channel structure is used to improve the output current drivability and average transconductance. In addition, a metal-semiconductor field-effect transistor (MESFET) with the same tri-step doped channel structure has also been fabricated for comparison. The studied devices show the good performances of high breakdown voltage, high output drain saturation current and flat and wide transconductance operation regimes. The measured cut-off frequency (f/sub T/) is higher than 15 GHz. From experimental results, the studied devices show good potential in high-power and large input signal circuit applications.
成功制备并演示了一种新型GaInP/GaAs高势垒三阶掺杂沟道异质结构场效应晶体管(HFET)。引入极薄且重掺杂的/spl δ /(p/sup +/)-GaInP层以提高高栅极导通和击穿电压,降低栅极漏电流。采用低-中-高三阶掺杂沟道结构,提高了输出电流的可驱动性和平均跨导性。此外,还制作了具有相同三阶掺杂沟道结构的金属半导体场效应晶体管(MESFET)进行比较。所研究的器件具有高击穿电压、高输出漏极饱和电流和平坦宽跨导工作模式等优良性能。测量到的截止频率(f/sub T/)大于15ghz。实验结果表明,所研究的器件在大功率大输入信号电路中具有良好的应用潜力。
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引用次数: 0
Gallium arsenide technology for low-power, high performance processor cores 用于低功耗、高性能处理器核心的砷化镓技术
S. Lachowicz, K. Eshraghian, J.F. Lopez
Recent developments in multimedia computing and communications have lead to rapid increase in performance requirements for the underlying VLSI technology which manifests itself in the development of new semiconductor materials as well as refinements in the existing ones. Not only are the circuits required to operate faster and dissipate less power, especially for portable applications, but integration of optics, i.e. image display and light detection functionality together with sophisticated signal processing in one chip becomes now a necessity and reality at the same time. The concept of personal interactive mobile multimedia communicators (M/sup 3/C) has lead to the idea of an intelligent pixel (IP) array which is effectively a video camera, a miniature display screen, and an advanced DSP processor in one device. For ultra-fast systems a considerable part of power is dissipated within a clock generation and distribution system. At the same time, at Gigahertz frequencies the clock skew becomes the factor limiting the speed of the system. This paper presents an outline of the intelligent pixel architecture and presents a detailed design methodology for highly pipelined, self-timed systems suitable for multimedia applications using Gallium Arsenide MESFET as the base technology implementation of latched logic design style (PDLL, LCFL). The use of latched logic together with the absence of the global clock provides for low power dissipation while maintaining very high speed of the system.
多媒体计算和通信的最新发展导致对VLSI底层技术的性能要求迅速提高,这体现在新半导体材料的开发以及对现有半导体材料的改进上。不仅要求电路运行速度更快,功耗更低,特别是对于便携式应用,而且光学集成,即图像显示和光检测功能以及在一个芯片上进行复杂的信号处理,现在成为必要和现实。个人交互式移动多媒体通信(M/sup /C)的概念导致了智能像素(IP)阵列的想法,该阵列有效地集摄像机、微型显示屏和先进的DSP处理器于一体。对于超高速系统,相当一部分功率在时钟产生和分配系统中耗散。同时,在千兆赫频率下,时钟偏差成为限制系统速度的因素。本文提出了智能像素架构的概述,并提出了一种详细的设计方法,用于高度流水线,自定时系统,适用于多媒体应用,使用砷化镓MESFET作为锁存逻辑设计风格(PDLL, LCFL)的基本技术实现。锁存逻辑的使用以及全局时钟的缺失提供了低功耗,同时保持系统的非常高的速度。
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引用次数: 0
期刊
1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)
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