Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791634
G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra
In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V
本文研究了mocvd生长的Al/sub 0.25/Ga/sub 0.75/N/GaN modfet的输出导纳频散特性。我们的测量在20 Hz至1 MHz的频率范围内进行，在不同的偏置条件下(2.5 V
{"title":"Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs","authors":"G. Umana-Membreno, J. Dell, B. Nener, L. Faraone, G. Parish, Y. Wu, U. Mishra","doi":"10.1109/COMMAD.1998.791634","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791634","url":null,"abstract":"In this paper we report a study of the output admittance frequency dispersion characteristics of MOCVD-grown Al/sub 0.25/Ga/sub 0.75/N/GaN MODFETs. Our measurements were performed over the frequency range from 20 Hz to 1 MHz, under different biasing conditions (2.5 V<Vds<5.0 V and -1 V<Vg<0 V) and over the temperature range from 77 to 150 K. Depending on the bias conditions, three different activation energies are observed (21.7/spl plusmn/0.7 meV, 6.4/spl plusmn/0.4 meV and 5.3/spl plusmn/0.6 meV) which are attributed to two trapping-centres: the silicon donor in AlGaN, and either surface states in the gate-drain region or interface states at the AlGaN/GaN interface. Additional measurements at high temperatures (600-700 K) indicate the presence of a deep-level trap with an activation energy of approximately 1 eV, in agreement with results reported by others.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125696945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791640
D. Redfern, C. Musca, E. Smith, J. Dell, L. Faraone
The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.
{"title":"On the transient photoconductive decay technique for lifetime extraction in HgCdTe","authors":"D. Redfern, C. Musca, E. Smith, J. Dell, L. Faraone","doi":"10.1109/COMMAD.1998.791640","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791640","url":null,"abstract":"The minority carrier lifetime of HgCdTe is studied using the photoconductive decay technique. The focus of this paper is to examine the various methods of extracting minority carrier lifetime and/or surface recombination parameters from photoconductive decay data, with particular reference to HgCdTe. It is shown that none of the current models unambiguously explain experimental results and that detailed lifetime extraction by photoconductive decay is still not a quantitative technique.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121863689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791691
A. Micolich, R. P. Taylor, R. Newbury, T. Fromhold, C. Tench
We demonstrate that self-similar magnetoconductance fluctuations observed in semiconductor Sinai billiards originate from quantum interference processes associated with classical trajectories enclosing discrete areas. We identify the exact areal distributions and use a simple model to reproduce the self-similarity with remarkable accuracy.
{"title":"Physical realisation of Weierstrass scaling using a quantum interferometer","authors":"A. Micolich, R. P. Taylor, R. Newbury, T. Fromhold, C. Tench","doi":"10.1109/COMMAD.1998.791691","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791691","url":null,"abstract":"We demonstrate that self-similar magnetoconductance fluctuations observed in semiconductor Sinai billiards originate from quantum interference processes associated with classical trajectories enclosing discrete areas. We identify the exact areal distributions and use a simple model to reproduce the self-similarity with remarkable accuracy.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"582 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131890160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791667
J. Gopalakrishna, W. Wlodarski, P. Iles
The Solid Polymer Electrolyte (SPE) based electrochemical oxygen sensor is reported in this paper. The oxygen sensor consists of three porous C/Pt based Gas Diffusion Electrodes (GDE) namely, working, reference and counter. The performance of the sensor is tested without external humidification of the test gases. In order to achieve internal humidification of the Nafion membrane, the oxygen reduction principle and back diffusion of water, is utilised. The sensor responds to oxygen concentrations from 10 ppm to 20%.
{"title":"Performance of solid polymer electrolyte based oxygen sensor without external humidification","authors":"J. Gopalakrishna, W. Wlodarski, P. Iles","doi":"10.1109/COMMAD.1998.791667","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791667","url":null,"abstract":"The Solid Polymer Electrolyte (SPE) based electrochemical oxygen sensor is reported in this paper. The oxygen sensor consists of three porous C/Pt based Gas Diffusion Electrodes (GDE) namely, working, reference and counter. The performance of the sensor is tested without external humidification of the test gases. In order to achieve internal humidification of the Nafion membrane, the oxygen reduction principle and back diffusion of water, is utilised. The sensor responds to oxygen concentrations from 10 ppm to 20%.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125203059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791602
S. Bandara, S. Gunapala, J.K. Liu, E. Luong, J. Mumolo, W. Hong, M. McKelvey
Long wavelength Quantum Well Infrared (QWIP) cameras developed at the Jet Laboratory demonstrate the potential of GaAs/Al/sub x/Ga/sub 1-x/As QWIP technology for highly sensitive, low power, low cost, and highly uniform large format (focal plane array (FPA)) imaging systems. These cameras utilize FPAs as large as 640/spl times/486 based on optimized GaAs/AlGaAs multiquantum-well (MQW) structures coupled with random or two dimensional periodic grating reflectors. Reported uniformities of these FPAs are better than 99.95% after two point correction has been reported. Other advantages of GaAs/AlGaAs based QWIPs are higher yield, durability, radiation hardness, and no 1/f noise till 30 mHz. In addition, QWIPs offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (wellwidth,) barrier composition (barrier height), and carrier density (well doping density). The GaAs/Al/sub x/Ga/sub 1-x/As material system allows the quantum well parameters to be varied over a range wide enough to enable light detection at any wavelength range between, 6-20 /spl mu/m. The spectral band width of these detectors can be tuned from narrow (/spl Delta//spl lambda///spl lambda//spl sim/10%) to wide (/spl Delta//spl lambda///spl lambda/ /spl sim/40%), allowing various applications. Also, QWIP device parameters can be optimized to achieve extremely high performance at lower operating temperatures (/spl sim/40 K) for low background, long-wavelength, infrared applications in the strategic arena as well as in astronomy.
{"title":"Quantum well infrared photodetectors for long wavelength infrared imaging applications","authors":"S. Bandara, S. Gunapala, J.K. Liu, E. Luong, J. Mumolo, W. Hong, M. McKelvey","doi":"10.1109/COMMAD.1998.791602","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791602","url":null,"abstract":"Long wavelength Quantum Well Infrared (QWIP) cameras developed at the Jet Laboratory demonstrate the potential of GaAs/Al/sub x/Ga/sub 1-x/As QWIP technology for highly sensitive, low power, low cost, and highly uniform large format (focal plane array (FPA)) imaging systems. These cameras utilize FPAs as large as 640/spl times/486 based on optimized GaAs/AlGaAs multiquantum-well (MQW) structures coupled with random or two dimensional periodic grating reflectors. Reported uniformities of these FPAs are better than 99.95% after two point correction has been reported. Other advantages of GaAs/AlGaAs based QWIPs are higher yield, durability, radiation hardness, and no 1/f noise till 30 mHz. In addition, QWIPs offer greater flexibility than usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored by varying layer thickness (wellwidth,) barrier composition (barrier height), and carrier density (well doping density). The GaAs/Al/sub x/Ga/sub 1-x/As material system allows the quantum well parameters to be varied over a range wide enough to enable light detection at any wavelength range between, 6-20 /spl mu/m. The spectral band width of these detectors can be tuned from narrow (/spl Delta//spl lambda///spl lambda//spl sim/10%) to wide (/spl Delta//spl lambda///spl lambda/ /spl sim/40%), allowing various applications. Also, QWIP device parameters can be optimized to achieve extremely high performance at lower operating temperatures (/spl sim/40 K) for low background, long-wavelength, infrared applications in the strategic arena as well as in astronomy.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124054465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791623
H. Chen, G. Huang
We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.
{"title":"Experimental evidence of side-wall effects on microwave-FET DC and AC performances","authors":"H. Chen, G. Huang","doi":"10.1109/COMMAD.1998.791623","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791623","url":null,"abstract":"We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127106169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791589
T. Ning
Summary form only given. With SiGe-based bipolar transistors making rapid inroads into high-frequency small-signal and analog applications, there is the question of whether they will permanently displace GaAs or other compound-semiconductor heterojunction bipolar transistors (HBTs). Often the attempts to answer this question have raised more questions because they were based on apple-to-orange comparisons. In this talk, we attempt to make an apple-to-apple comparison of the SiGe and GaAs HBTs by examining and comparing the intrinsic physical properties of the materials and the electrical parameters of these transistors. The comparison is made for devices of comparably advanced structures and of the same design rules. The conclusions are that the commonly practiced SiGe HBT is not really a heterojunction bipolar transistor at all, and that GaAs HBTs are inherently faster than SiGe "HBTs". Therefore, GaAs and other compound-semiconductor HBTs will have a place in applications where the higher speed makes an important difference. The inherent advantage of SiGe bipolar transistor over GaAs HBT lies in its being compatible with CMOS VLSI processing.
{"title":"With SiGe, who needs GaAs?","authors":"T. Ning","doi":"10.1109/COMMAD.1998.791589","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791589","url":null,"abstract":"Summary form only given. With SiGe-based bipolar transistors making rapid inroads into high-frequency small-signal and analog applications, there is the question of whether they will permanently displace GaAs or other compound-semiconductor heterojunction bipolar transistors (HBTs). Often the attempts to answer this question have raised more questions because they were based on apple-to-orange comparisons. In this talk, we attempt to make an apple-to-apple comparison of the SiGe and GaAs HBTs by examining and comparing the intrinsic physical properties of the materials and the electrical parameters of these transistors. The comparison is made for devices of comparably advanced structures and of the same design rules. The conclusions are that the commonly practiced SiGe HBT is not really a heterojunction bipolar transistor at all, and that GaAs HBTs are inherently faster than SiGe \"HBTs\". Therefore, GaAs and other compound-semiconductor HBTs will have a place in applications where the higher speed makes an important difference. The inherent advantage of SiGe bipolar transistor over GaAs HBT lies in its being compatible with CMOS VLSI processing.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127047203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791680
E. Gluszak, S. Hinckley
Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity /spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/) and possess a small degree of photosensitivity. Air annealing of the films at 100-400/spl deg/C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to /spl sim/2.24 eV after air annealing.
{"title":"Optical and electrical properties of chemically deposited CdS thin films modified by air annealing","authors":"E. Gluszak, S. Hinckley","doi":"10.1109/COMMAD.1998.791680","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791680","url":null,"abstract":"Polycrystalline CdS thin films have been grown by chemical bath deposition (CBD) using cadmium acetate and thiourea as the Cd and S ion sources. The as-deposited films show a low degree of crystallinity, are very resistive (conductivity /spl sim/10/sup -7/ /spl Omega//sup -1//spl middot/cm/sup -1/) and possess a small degree of photosensitivity. Air annealing of the films at 100-400/spl deg/C for 1 hr converts them to n-type through partial conversion of CdS to CdO. This is accompanied by an increase in the photoconductivity by more than 6 orders of magnitude. The optical bandgaps of the as-deposited films were >2.38 eV, which decreased to /spl sim/2.24 eV after air annealing.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127312315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791655
W. Xu
In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently.
{"title":"Magneto-plasmon modes in a semiconductor under intense terahertz laser radiation","authors":"W. Xu","doi":"10.1109/COMMAD.1998.791655","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791655","url":null,"abstract":"In this paper, we study theoretically how a linearly polarised intense laser field affects the magneto-plasmon modes in a semiconductor-based electron gas system. Using time-dependent condensed matter theory, we have obtained the electron density of states and the plasmon spectrum in the spectrum representation, and we have investigated the dependence of the magneto-plasmon excitation and the Fermi energy on frequency and intensity of the laser field and on magnetic field in GaAs material. The results are pertinent to the application of terahertz free-electron laser sources developed very recently.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129083148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791582
R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom
We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.
{"title":"Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition","authors":"R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom","doi":"10.1109/COMMAD.1998.791582","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791582","url":null,"abstract":"We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130248353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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