Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791638
H. Hwang, Tae-Wan Lee, Y. Moon, E. Yoon, Y. D. Kim
InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
{"title":"In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption","authors":"H. Hwang, Tae-Wan Lee, Y. Moon, E. Yoon, Y. D. Kim","doi":"10.1109/COMMAD.1998.791638","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791638","url":null,"abstract":"InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791652
W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian
Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.
{"title":"High growth rate transparent conducting zinc-oxide thin film prepared by metalorganic chemical vapor deposition technique for device applications","authors":"W.W. Wenas, A. Setiawan, F. Adriyanto, H. Sangian","doi":"10.1109/COMMAD.1998.791652","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791652","url":null,"abstract":"Transparent conducting zinc oxide films were grown by metalorganic chemical vapor deposition using diethylzinc/H/sub 2/O and dimethylzinc/H/sub 2/O reactant systems. The dimethylzinc/H/sub 2/O reactant system was introduced for the first time in this study to grow ZnO films. A very high growth rate of 10 /spl mu/m/h was obtained. The B/sub 2/H/sub 6/ was also employed is an n-type dopant to lower the sheet resistivity of the films. By optimizing the B/sub 2/H/sub 6/ flow rate, the films with a sheet resistivity as low as 4 /spl Omega//sq was achieved. The films showed a high transmittance of around 90% in a wavelength range from 400 nm to 1000 nm, suggesting their suitability to be used as transparent conducting materials.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115888469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791656
D.H. Zhang, W. Shi, P. Zhang, S. Yoon
The effects of doping concentration incorporated into the well material of the p-type InGaAs/AlGaAs multiple quantum well structures are investigated by photoluminescence and double crystal X-ray diffraction techniques. The increased Be doping is found to cause red shift of the dopant-related and excitonic luminescence in the well material of the structures, increase well width, deteriorate the interface quality and increase lattice mismatch. Those factors affect the positioning of the heavy and light holes in the valence band well, and thus the infrared wavelength resulted from the intersubband transition. These observations are useful for the design of p-type quantum well infrared photodetectors.
{"title":"Be-doped InGaAs/AlGaAs strained quantum well structures grown by molecular beam epitaxy","authors":"D.H. Zhang, W. Shi, P. Zhang, S. Yoon","doi":"10.1109/COMMAD.1998.791656","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791656","url":null,"abstract":"The effects of doping concentration incorporated into the well material of the p-type InGaAs/AlGaAs multiple quantum well structures are investigated by photoluminescence and double crystal X-ray diffraction techniques. The increased Be doping is found to cause red shift of the dopant-related and excitonic luminescence in the well material of the structures, increase well width, deteriorate the interface quality and increase lattice mismatch. Those factors affect the positioning of the heavy and light holes in the valence band well, and thus the infrared wavelength resulted from the intersubband transition. These observations are useful for the design of p-type quantum well infrared photodetectors.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"451 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122157116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791670
K. Ayadi, P. Danielsen
We analyze and demonstrate a synchronized CMOS photoreceiver for the conversion of optical inputs of pulse-light to electronic digital signals. Small-signal and photonic analysis of the proposed circuit are detailed. The photoreceiver was operated at 100 MHz with only 13.3 fJ/pulse of 830-nm input light. Its effective area is 100/spl times/60 /spl mu/m/sup 2/ which makes this monolithic photoreceiver extremely important for use in data storage and optical interconnection applications.
{"title":"A 100 MHz synchronized OEIC photoreceiver in n-well, CMOS technology","authors":"K. Ayadi, P. Danielsen","doi":"10.1109/COMMAD.1998.791670","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791670","url":null,"abstract":"We analyze and demonstrate a synchronized CMOS photoreceiver for the conversion of optical inputs of pulse-light to electronic digital signals. Small-signal and photonic analysis of the proposed circuit are detailed. The photoreceiver was operated at 100 MHz with only 13.3 fJ/pulse of 830-nm input light. Its effective area is 100/spl times/60 /spl mu/m/sup 2/ which makes this monolithic photoreceiver extremely important for use in data storage and optical interconnection applications.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"358 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122809243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791659
M. Johnston, L. Dao, M. Gal, N. Lumpkin, R. G. Clark, F. Lan, H. Tan, C. Jagadish, Nanxi Li, Zhanghai Chen, Xingquan Liu, Ning Li, W. Lu, S. Shen
Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.
{"title":"A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy","authors":"M. Johnston, L. Dao, M. Gal, N. Lumpkin, R. G. Clark, F. Lan, H. Tan, C. Jagadish, Nanxi Li, Zhanghai Chen, Xingquan Liu, Ning Li, W. Lu, S. Shen","doi":"10.1109/COMMAD.1998.791659","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791659","url":null,"abstract":"Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129585070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791633
W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan
A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.
{"title":"On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)","authors":"W. Liu, S. Cheng, H. Pan, S. Feng, K. Yu, J. Yan","doi":"10.1109/COMMAD.1998.791633","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791633","url":null,"abstract":"A new AlInAs/GaInAs superlattice negative-differential-resistance switch (SNDRT) is fabricated successfully and demonstrated. A 5-period AlInAs/GaInAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority carriers. Experimentally, an interesting three-terminal-controlled N-shaped multiple negative-differential-resistance (MNDR) phenomenon and transistor action are obtained for the studied SNDRT device in the saturation and forward active mode at room temperature, respectively. It is believed that the N-shaped MNDR results mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124537132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791642
C. Musca, E. Smith, J. Dell, L. Faraone
HgCdTe is the material of choice for high performance infrared (IR) detectors operating in the long-wavelength and mid-wavelength (LWIR and MWIR, respectively) regions of the electromagnetic spectrum. Photoconductive HgCdTe IR detectors are commonly used for single element and linear arrays due to their higher yield when compared to photovoltaic devices. In this work characterisation of fabricated n-type photoconductors with blocking contacts and heterostructure passivation are presented. The two-layer heterostructure photoconductors exhibit up to a 100% increase in responsivity over the equivalent single-layer photoconductors at an applied electric field of 10 V/cm. The two-layer and single-layer photoconductors have been subjected to bake tests at 85/spl deg/C for 20 hours with the single-layer photoconductors showing a large degradation in performance compared to the two-layer photoconductors. A suitably modified commercial device simulation package has been used to model blocking contacts in two dimensions.
{"title":"Performance and stability of HgCdTe photoconductive devices: a study of passivation and contact technology","authors":"C. Musca, E. Smith, J. Dell, L. Faraone","doi":"10.1109/COMMAD.1998.791642","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791642","url":null,"abstract":"HgCdTe is the material of choice for high performance infrared (IR) detectors operating in the long-wavelength and mid-wavelength (LWIR and MWIR, respectively) regions of the electromagnetic spectrum. Photoconductive HgCdTe IR detectors are commonly used for single element and linear arrays due to their higher yield when compared to photovoltaic devices. In this work characterisation of fabricated n-type photoconductors with blocking contacts and heterostructure passivation are presented. The two-layer heterostructure photoconductors exhibit up to a 100% increase in responsivity over the equivalent single-layer photoconductors at an applied electric field of 10 V/cm. The two-layer and single-layer photoconductors have been subjected to bake tests at 85/spl deg/C for 20 hours with the single-layer photoconductors showing a large degradation in performance compared to the two-layer photoconductors. A suitably modified commercial device simulation package has been used to model blocking contacts in two dimensions.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116187588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791611
M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr
In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a "built in band edge filter" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.
{"title":"Wavelength selective wide bandgap II-VI detectors","authors":"M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr","doi":"10.1109/COMMAD.1998.791611","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791611","url":null,"abstract":"In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a \"built in band edge filter\" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121322381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791651
L. Tan, F. Huynh
An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.
{"title":"Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique","authors":"L. Tan, F. Huynh","doi":"10.1109/COMMAD.1998.791651","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791651","url":null,"abstract":"An analytical theory of the surface photovoltage method for the determination of the minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes is presented. Values of minority carrier diffusion lengths extracted using the theory agree well with those from full numerical simulations. Experimental verification of the theory is currently in progress.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131271912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-12-14DOI: 10.1109/COMMAD.1998.791698
K. Winchester, S.M.R. Spaargaren, J. Dell
The construction of freestanding microstructures requires the use of a sacrificial etch layer. Whilst SiO/sub 2/ is commonly employed as a sacrificial layer for LPCVD silicon nitride structures, we have found that it is incompatible with thin self-supporting membranes of PECVD silicon nitride. Specifically, when fabricating such self-supporting membranes the selectivity of the membrane to the SiO/sub 2/ etch is too low. This problem causes the membrane structure to be etched significantly during the long etch times required to release a device from the sacrificial layer. It is shown that by using ZnS as a sacrificial layer, thin self-supporting membrane microstructures formed from PECVD silicon nitride can be accomplished. This process allows integration of MEMs structures with semiconductors that are incompatible with high temperature processing.
{"title":"The use of ZnS as a sacrificial layer in the construction of PECVD SiN/sub x/ self-supporting structures","authors":"K. Winchester, S.M.R. Spaargaren, J. Dell","doi":"10.1109/COMMAD.1998.791698","DOIUrl":"https://doi.org/10.1109/COMMAD.1998.791698","url":null,"abstract":"The construction of freestanding microstructures requires the use of a sacrificial etch layer. Whilst SiO/sub 2/ is commonly employed as a sacrificial layer for LPCVD silicon nitride structures, we have found that it is incompatible with thin self-supporting membranes of PECVD silicon nitride. Specifically, when fabricating such self-supporting membranes the selectivity of the membrane to the SiO/sub 2/ etch is too low. This problem causes the membrane structure to be etched significantly during the long etch times required to release a device from the sacrificial layer. It is shown that by using ZnS as a sacrificial layer, thin self-supporting membrane microstructures formed from PECVD silicon nitride can be accomplished. This process allows integration of MEMs structures with semiconductors that are incompatible with high temperature processing.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134164795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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