Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548423
Konstantinos Alexandrou, A. Masurkar, H. Edrees, J. Wishart, Y. Hao, Nicholas Petrone, J. Hone, I. Kymissis
Our work demonstrates that both encapsulation and an insulated gate are needed to effectively produce radiation hard GFETs. Our devices successfully mitigate detrimental radiation effects which consists a significant step towards enabling graphene-based electronic devices to be used for space, military, and other radiation sensitive applications.
{"title":"Radiation hardened graphene field effect transistors","authors":"Konstantinos Alexandrou, A. Masurkar, H. Edrees, J. Wishart, Y. Hao, Nicholas Petrone, J. Hone, I. Kymissis","doi":"10.1109/DRC.2016.7548423","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548423","url":null,"abstract":"Our work demonstrates that both encapsulation and an insulated gate are needed to effectively produce radiation hard GFETs. Our devices successfully mitigate detrimental radiation effects which consists a significant step towards enabling graphene-based electronic devices to be used for space, military, and other radiation sensitive applications.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127594494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548428
K. Tsai, Chih-Hsiang Ho, W. Chang, Jr-jian Ke, Elif S. Mungan, Yuh‐Lin Wang, Jr-hau He
We have demonstrated that ZnO resistive memory with a nanostructured substrate has great potential in improving ReRAM's RS characteristics. The electric field concentrated on nanotip structures is believed to play a crucial role for lowering Vf and Vset. The uniformity of the nanostructures is also important for the optimization of device performance, as well as improving the switching uniformity and reliability. Combining with the fact that fabrication process has low-cost merit with excellent stability and scalability, the nanotip array is highly attractive for cost-effective ReRAM applications and for the device miniaturization.
{"title":"Stable switching of resistive random access memory on the nanotip array electrodes","authors":"K. Tsai, Chih-Hsiang Ho, W. Chang, Jr-jian Ke, Elif S. Mungan, Yuh‐Lin Wang, Jr-hau He","doi":"10.1109/DRC.2016.7548428","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548428","url":null,"abstract":"We have demonstrated that ZnO resistive memory with a nanostructured substrate has great potential in improving ReRAM's RS characteristics. The electric field concentrated on nanotip structures is believed to play a crucial role for lowering Vf and Vset. The uniformity of the nanostructures is also important for the optimization of device performance, as well as improving the switching uniformity and reliability. Combining with the fact that fabrication process has low-cost merit with excellent stability and scalability, the nanotip array is highly attractive for cost-effective ReRAM applications and for the device miniaturization.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127373258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548394
S. Bajaj, F. Akyol, S. Krishnamoorthy, Yuewei Zhang, A. Armstrong, A. Allerman, S. Rajan
We report on the first ultra-wide bandgap Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistor (MISFET) with heterostructure engineered ohmic contacts. The large breakdown field of AlN (12 MV/cm) and the superior device figures of merit make wider bandgap AlGaN attractive for the next-generation RF power amplifiers and switches [1]. However, a critical challenge preventing advancement in high composition AlGaN-based devices is the high resistance of ohmic contacts, due to the large ionization energy of dopants and the low electron affinity of AlN, both of which increase tunneling barrier for electrons. In this work, we use reverse polarization-graded n++ AlGaN contact layers to achieve a record low contact resistance (Rc) of 0.3 Ω.mm to 75 nm thick n-Al0.75Ga0.25N channel, translating in a specific contact resistance (ρsp) of 1.9×10-6 Ω.cm2. We then demonstrate the first ultra-wide bandgap Al0.75Ga0.25N channel MISFET with gate-recessed structure, employing polarization-graded contacts and Atomic Layer Deposited Al2O3 as the gate-dielectric.
{"title":"Ultra-wide bandgap AlGaN channel MISFET with polarization engineered ohmics","authors":"S. Bajaj, F. Akyol, S. Krishnamoorthy, Yuewei Zhang, A. Armstrong, A. Allerman, S. Rajan","doi":"10.1109/DRC.2016.7548394","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548394","url":null,"abstract":"We report on the first ultra-wide bandgap Al<sub>0.75</sub>Ga<sub>0.25</sub>N channel metal-insulator-semiconductor field-effect transistor (MISFET) with heterostructure engineered ohmic contacts. The large breakdown field of AlN (12 MV/cm) and the superior device figures of merit make wider bandgap AlGaN attractive for the next-generation RF power amplifiers and switches [1]. However, a critical challenge preventing advancement in high composition AlGaN-based devices is the high resistance of ohmic contacts, due to the large ionization energy of dopants and the low electron affinity of AlN, both of which increase tunneling barrier for electrons. In this work, we use reverse polarization-graded n++ AlGaN contact layers to achieve a record low contact resistance (Rc) of 0.3 Ω.mm to 75 nm thick n-Al<sub>0.75</sub>Ga<sub>0.25</sub>N channel, translating in a specific contact resistance (ρsp) of 1.9×10<sup>-6</sup> Ω.cm<sup>2</sup>. We then demonstrate the first ultra-wide bandgap Al<sub>0.75</sub>Ga<sub>0.25</sub>N channel MISFET with gate-recessed structure, employing polarization-graded contacts and Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub> as the gate-dielectric.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132299056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548451
A. Alharbi, D. Shahrjerdi
Flexible electronics based on rigid conventional crystalline semiconductors such as silicon and compound semiconductors is emerging as a new class of technology. At present, the existing approaches for realizing flexible electronics from those materials have focused on maintaining the performance of the original device. Here, we demonstrate a new approach for tailoring the electronic and optoelectronic properties of high-performance flexible devices through strain engineering. In this work, we use flexible gallium arsenide (GaAs) devices as a model system. We show that layer transfer through substrate cracking with a pre-tensioned nickel film can be utilized for engineering the electronic band structure of flexible GaAs devices. We empirically and theoretically quantify the effect of the `engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence (PL) and quantum efficiency (QE) measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. More importantly, our strain engineering method is universal and can be readily extended to other flexible material systems such as gallium nitride.
{"title":"A new approach for energy band engineering in flexible GaAs devices","authors":"A. Alharbi, D. Shahrjerdi","doi":"10.1109/DRC.2016.7548451","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548451","url":null,"abstract":"Flexible electronics based on rigid conventional crystalline semiconductors such as silicon and compound semiconductors is emerging as a new class of technology. At present, the existing approaches for realizing flexible electronics from those materials have focused on maintaining the performance of the original device. Here, we demonstrate a new approach for tailoring the electronic and optoelectronic properties of high-performance flexible devices through strain engineering. In this work, we use flexible gallium arsenide (GaAs) devices as a model system. We show that layer transfer through substrate cracking with a pre-tensioned nickel film can be utilized for engineering the electronic band structure of flexible GaAs devices. We empirically and theoretically quantify the effect of the `engineered' residual strain on the electronic band structure in these flexible GaAs devices. Photoluminescence (PL) and quantum efficiency (QE) measurements indicate the widening of the GaAs energy bandgap due to the residual compressive strain. More importantly, our strain engineering method is universal and can be readily extended to other flexible material systems such as gallium nitride.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116599940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548463
J. Shank, M. Tellekamp, W. Doolittle
An electronic device is introduced that exhibits rectification, hysteresis, and capacitance. These three properties replicate biological functionality useful in neuromorphic circuitry. A similar device operating on different physical mechanisms was previously demonstrated in 2013, but its fabrication required an electro-formation process that introduces difficulties scaling to high density circuitry [1]. The metal-insulator-metal (MIM) structures discussed herein exhibit rectification, hysteresis, and capacitance resulting from an intentionally high defect density as deposited with no post-fabrication treatment necessary.
{"title":"A scalable non-electroformed memdiode for neuromorphic circuitry","authors":"J. Shank, M. Tellekamp, W. Doolittle","doi":"10.1109/DRC.2016.7548463","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548463","url":null,"abstract":"An electronic device is introduced that exhibits rectification, hysteresis, and capacitance. These three properties replicate biological functionality useful in neuromorphic circuitry. A similar device operating on different physical mechanisms was previously demonstrated in 2013, but its fabrication required an electro-formation process that introduces difficulties scaling to high density circuitry [1]. The metal-insulator-metal (MIM) structures discussed herein exhibit rectification, hysteresis, and capacitance resulting from an intentionally high defect density as deposited with no post-fabrication treatment necessary.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125617155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548462
Yunkun Xie, B. Behin-Aein, Avik W. Ghosh
Emerging spintronics and nanomagnetic devices have attracted a lot of attention due to their versatility, scalability and energy efficiency. Most spintronics applications require manipulation of nano-magnet in a fast and efficient way. Spin transfer torque (STT) effect[1] is so far the most studied and well demonstrated means to switch a nano-size magnetic. Compared to traditional switching scheme by magnetic field, STT provides a scalable solution to manipulate the magnetization of a nano-sized magnet. STT based memory spin transfer torque magnetic random access memory (STT-MRAM) and spin torque oscillator (STO) have been proposed and experimentally demonstrated[2, 3]. One issue accompanies magnetic switching is the thermal noise. Under room temperature the magnetic switching under STT is susceptible to thermal fluctuation and often results in a distribution in switching current/delay. In applications like STT based memory, its stochastic nature can cause read/write error. In the case of write operation, increasing applied current or switching time can effectively reduce write error but both quantities are limited by other considerations such as energy dissipation, junction breakdown and etc. This kind of trade-off is essential in device and application design. The aim of the work is to promote numerical Fokker-Planck based framework to study thermal effect in STT switching. The comparison between numerical Fokker-Planck approach and other methods are summarized. We have also investigated write error rate (WER) in STT switching with a focus on its `slope' which is related to the write margin but not so often discussed in literature.
{"title":"Numerical Fokker-Planck simulation of stochastic write error in spin torque switching with thermal noise","authors":"Yunkun Xie, B. Behin-Aein, Avik W. Ghosh","doi":"10.1109/DRC.2016.7548462","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548462","url":null,"abstract":"Emerging spintronics and nanomagnetic devices have attracted a lot of attention due to their versatility, scalability and energy efficiency. Most spintronics applications require manipulation of nano-magnet in a fast and efficient way. Spin transfer torque (STT) effect[1] is so far the most studied and well demonstrated means to switch a nano-size magnetic. Compared to traditional switching scheme by magnetic field, STT provides a scalable solution to manipulate the magnetization of a nano-sized magnet. STT based memory spin transfer torque magnetic random access memory (STT-MRAM) and spin torque oscillator (STO) have been proposed and experimentally demonstrated[2, 3]. One issue accompanies magnetic switching is the thermal noise. Under room temperature the magnetic switching under STT is susceptible to thermal fluctuation and often results in a distribution in switching current/delay. In applications like STT based memory, its stochastic nature can cause read/write error. In the case of write operation, increasing applied current or switching time can effectively reduce write error but both quantities are limited by other considerations such as energy dissipation, junction breakdown and etc. This kind of trade-off is essential in device and application design. The aim of the work is to promote numerical Fokker-Planck based framework to study thermal effect in STT switching. The comparison between numerical Fokker-Planck approach and other methods are summarized. We have also investigated write error rate (WER) in STT switching with a focus on its `slope' which is related to the write margin but not so often discussed in literature.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133869977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548435
Tejas R. Naik, R. Krishnan, Priyanka Kumari, M. Ravikanth, V. Rao
A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on silicon is done using contact angle, FTIR, UV-Vis, etc. The doping is confirmed using SIMS and four-probe measurement (sheet resistance). MISCAP devices, pn junction diodes using the above technique are fabricated and characterized using capacitance-voltage (CV) and current-voltage (IV) measurements. SAM layer is utilized for doping in 3D fin like structures.
{"title":"Novel hydroxy-phenyl phosphorus porphyrin self-assembled monolayers for conformal n-type doping in Finfets","authors":"Tejas R. Naik, R. Krishnan, Priyanka Kumari, M. Ravikanth, V. Rao","doi":"10.1109/DRC.2016.7548435","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548435","url":null,"abstract":"A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on silicon is done using contact angle, FTIR, UV-Vis, etc. The doping is confirmed using SIMS and four-probe measurement (sheet resistance). MISCAP devices, pn junction diodes using the above technique are fabricated and characterized using capacitance-voltage (CV) and current-voltage (IV) measurements. SAM layer is utilized for doping in 3D fin like structures.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127677411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548483
M. Yogeesh, Hsiao-Yu Chang, Wei Li, S. Rahimi, A. Rai, A. Sanne, R. Ghosh, S. Banerjee, D. Akinwande
There is a growing interest in the design of novel flexible electronics for future internet of things (IoT) systems [1]. IoT requires design of low power RF electronics operating at GHz frequency range. Molybdenum disulphide (MoS2) is the prototypical transitional metal dichalcogenide (TMD) affording a large semiconducting bandgap (1.8eV), high saturation velocity, good mechanical strength, high mobility (> 50cm2/Vs), high on/off ratio (> 106), good current saturation and GHz RF performance [2]. In this work, we demonstrate wafer scale monolayer MoS2 based flexible RF nanoelectronics that can be used for low power nanoelectronics and flexible IoT systems.
{"title":"Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems","authors":"M. Yogeesh, Hsiao-Yu Chang, Wei Li, S. Rahimi, A. Rai, A. Sanne, R. Ghosh, S. Banerjee, D. Akinwande","doi":"10.1109/DRC.2016.7548483","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548483","url":null,"abstract":"There is a growing interest in the design of novel flexible electronics for future internet of things (IoT) systems [1]. IoT requires design of low power RF electronics operating at GHz frequency range. Molybdenum disulphide (MoS2) is the prototypical transitional metal dichalcogenide (TMD) affording a large semiconducting bandgap (1.8eV), high saturation velocity, good mechanical strength, high mobility (> 50cm2/Vs), high on/off ratio (> 106), good current saturation and GHz RF performance [2]. In this work, we demonstrate wafer scale monolayer MoS2 based flexible RF nanoelectronics that can be used for low power nanoelectronics and flexible IoT systems.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"R-29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126627723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548402
N. Shukla, M. Jerry, H. Nair, M. Barth, D. Schlom, S. Datta
We have investigated the electrically induced IMT in Ca2RuO4 thin films whose transition temperature has been increased by >190 K (TIMT > 550K) using epitaxial strain engineering. We show using DC and transient I-V measurements that the electrically induced phase transition is electro-thermal in nature, and is driven by current induced self-heating.
采用外延应变工程技术研究了转变温度提高>190 K (TIMT > 550K)的Ca2RuO4薄膜的电致IMT。我们使用直流和瞬态I-V测量表明，电诱导相变本质上是电热的，并且是由电流诱导的自加热驱动的。
{"title":"Electrically driven reversible insulator-metal phase transition in Ca2RuO4","authors":"N. Shukla, M. Jerry, H. Nair, M. Barth, D. Schlom, S. Datta","doi":"10.1109/DRC.2016.7548402","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548402","url":null,"abstract":"We have investigated the electrically induced IMT in Ca2RuO4 thin films whose transition temperature has been increased by >190 K (TIMT > 550K) using epitaxial strain engineering. We show using DC and transient I-V measurements that the electrically induced phase transition is electro-thermal in nature, and is driven by current induced self-heating.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123817379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7676130
E. Yalon, C. McClellan, K. Smithe, Y. C. Shin, R. Xu, E. Pop
We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.
{"title":"Direct observation of power dissipation in monolayer MoS2 devices","authors":"E. Yalon, C. McClellan, K. Smithe, Y. C. Shin, R. Xu, E. Pop","doi":"10.1109/DRC.2016.7676130","DOIUrl":"https://doi.org/10.1109/DRC.2016.7676130","url":null,"abstract":"We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131954635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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