Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548464
B. Romanczyk, S. Wienecke, M. Guidry, Haoran Li, K. Hestroffer, E. Ahmadi, Xun Zheng, S. Keller, U. Mishra
GaN based high electron mobility transistors have emerged as a leading technology for mm-wave solid state power amplification at W-band. To date, reports on W-band GaN HEMTs and MMICs have primarily featured devices grown in the Ga-polar orientation [1, 2]. In this work, the advantages of the N-polar orientation are exploited to produce a MISHEMT exhibiting record high 4.2 W/mm peak output power (Pout) at 94 GHz. The key enabling advantage of N-polar GaN devices are their inverted polarization fields. These fields create a natural, charge-inducing back-barrier that decouples the tradeoff between aspect ratio and channel electron density. Further, the reversed field in an AlGaN cap above the GaN channel opposes gate leakage and improves breakdown voltage [3]. Additionally, to mitigate surface-state induced dispersion and enhance the conductivity of the access regions, a GaN cap layer is added in the access regions through which the gate is recessed [4]. The fabrication process reported in this paper extends that of [4, 5] to have the foot gate metal deposited in a self-aligned fashion to the GaN cap recess etch.
{"title":"mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire","authors":"B. Romanczyk, S. Wienecke, M. Guidry, Haoran Li, K. Hestroffer, E. Ahmadi, Xun Zheng, S. Keller, U. Mishra","doi":"10.1109/DRC.2016.7548464","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548464","url":null,"abstract":"GaN based high electron mobility transistors have emerged as a leading technology for mm-wave solid state power amplification at W-band. To date, reports on W-band GaN HEMTs and MMICs have primarily featured devices grown in the Ga-polar orientation [1, 2]. In this work, the advantages of the N-polar orientation are exploited to produce a MISHEMT exhibiting record high 4.2 W/mm peak output power (Pout) at 94 GHz. The key enabling advantage of N-polar GaN devices are their inverted polarization fields. These fields create a natural, charge-inducing back-barrier that decouples the tradeoff between aspect ratio and channel electron density. Further, the reversed field in an AlGaN cap above the GaN channel opposes gate leakage and improves breakdown voltage [3]. Additionally, to mitigate surface-state induced dispersion and enhance the conductivity of the access regions, a GaN cap layer is added in the access regions through which the gate is recessed [4]. The fabrication process reported in this paper extends that of [4, 5] to have the foot gate metal deposited in a self-aligned fashion to the GaN cap recess etch.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548463
J. Shank, M. Tellekamp, W. Doolittle
An electronic device is introduced that exhibits rectification, hysteresis, and capacitance. These three properties replicate biological functionality useful in neuromorphic circuitry. A similar device operating on different physical mechanisms was previously demonstrated in 2013, but its fabrication required an electro-formation process that introduces difficulties scaling to high density circuitry [1]. The metal-insulator-metal (MIM) structures discussed herein exhibit rectification, hysteresis, and capacitance resulting from an intentionally high defect density as deposited with no post-fabrication treatment necessary.
{"title":"A scalable non-electroformed memdiode for neuromorphic circuitry","authors":"J. Shank, M. Tellekamp, W. Doolittle","doi":"10.1109/DRC.2016.7548463","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548463","url":null,"abstract":"An electronic device is introduced that exhibits rectification, hysteresis, and capacitance. These three properties replicate biological functionality useful in neuromorphic circuitry. A similar device operating on different physical mechanisms was previously demonstrated in 2013, but its fabrication required an electro-formation process that introduces difficulties scaling to high density circuitry [1]. The metal-insulator-metal (MIM) structures discussed herein exhibit rectification, hysteresis, and capacitance resulting from an intentionally high defect density as deposited with no post-fabrication treatment necessary.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"2005 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125617155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548450
Christopher J. Cullen, J. Jerothe, J. Murakowski, M. Zablocki, A. Sharkawy, D. Prather
Up-converting RF information to optical signals has become an appealing alternative for communication, besides in the realm of telecommunication, due to inherent advantages in using fiber optics. Fibers have proven to have lower loss, better bandwidth, be lighter, and as robust as conventional copper cabling. This has led to applications in intelligent traffic systems, military uses (including integration into tanks and drones), and others not explicitly stated here. Central to these systems working well is the efficient, accurate up-converting of an RF signal; it is here that the roll of the electro-optic modulator is introduced into the system. The more efficient and linear these modulators can be, the more accurately the data can be up-converted, and the less power required perform the conversion. There have been efforts to increase efficiency by developing materials with higher intrinsic χ(2) nonlinearity [1], and developing structures to increase field interaction magnitude with the material [2]-[4], but not without limiting the bandwidth of the device. In this work, we explore a novel modulation scheme to up efficiency and linearity without sacrificing bandwidth.
{"title":"Recycled carrier modulation using Fabry-Perot resonance","authors":"Christopher J. Cullen, J. Jerothe, J. Murakowski, M. Zablocki, A. Sharkawy, D. Prather","doi":"10.1109/DRC.2016.7548450","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548450","url":null,"abstract":"Up-converting RF information to optical signals has become an appealing alternative for communication, besides in the realm of telecommunication, due to inherent advantages in using fiber optics. Fibers have proven to have lower loss, better bandwidth, be lighter, and as robust as conventional copper cabling. This has led to applications in intelligent traffic systems, military uses (including integration into tanks and drones), and others not explicitly stated here. Central to these systems working well is the efficient, accurate up-converting of an RF signal; it is here that the roll of the electro-optic modulator is introduced into the system. The more efficient and linear these modulators can be, the more accurately the data can be up-converted, and the less power required perform the conversion. There have been efforts to increase efficiency by developing materials with higher intrinsic χ(2) nonlinearity [1], and developing structures to increase field interaction magnitude with the material [2]-[4], but not without limiting the bandwidth of the device. In this work, we explore a novel modulation scheme to up efficiency and linearity without sacrificing bandwidth.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"50 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127236234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548428
K. Tsai, Chih-Hsiang Ho, W. Chang, Jr-jian Ke, Elif S. Mungan, Yuh‐Lin Wang, Jr-hau He
We have demonstrated that ZnO resistive memory with a nanostructured substrate has great potential in improving ReRAM's RS characteristics. The electric field concentrated on nanotip structures is believed to play a crucial role for lowering Vf and Vset. The uniformity of the nanostructures is also important for the optimization of device performance, as well as improving the switching uniformity and reliability. Combining with the fact that fabrication process has low-cost merit with excellent stability and scalability, the nanotip array is highly attractive for cost-effective ReRAM applications and for the device miniaturization.
{"title":"Stable switching of resistive random access memory on the nanotip array electrodes","authors":"K. Tsai, Chih-Hsiang Ho, W. Chang, Jr-jian Ke, Elif S. Mungan, Yuh‐Lin Wang, Jr-hau He","doi":"10.1109/DRC.2016.7548428","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548428","url":null,"abstract":"We have demonstrated that ZnO resistive memory with a nanostructured substrate has great potential in improving ReRAM's RS characteristics. The electric field concentrated on nanotip structures is believed to play a crucial role for lowering Vf and Vset. The uniformity of the nanostructures is also important for the optimization of device performance, as well as improving the switching uniformity and reliability. Combining with the fact that fabrication process has low-cost merit with excellent stability and scalability, the nanotip array is highly attractive for cost-effective ReRAM applications and for the device miniaturization.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127373258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548395
A. Baca, A. Armstrong, A. Allerman, E. Douglas, C. Sanchez, M. King, M. Coltrin, C. Nordquist, T. Fortune, R. Kaplar
The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.
{"title":"An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact","authors":"A. Baca, A. Armstrong, A. Allerman, E. Douglas, C. Sanchez, M. King, M. Coltrin, C. Nordquist, T. Fortune, R. Kaplar","doi":"10.1109/DRC.2016.7548395","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548395","url":null,"abstract":"The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122895362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548423
Konstantinos Alexandrou, A. Masurkar, H. Edrees, J. Wishart, Y. Hao, Nicholas Petrone, J. Hone, I. Kymissis
Our work demonstrates that both encapsulation and an insulated gate are needed to effectively produce radiation hard GFETs. Our devices successfully mitigate detrimental radiation effects which consists a significant step towards enabling graphene-based electronic devices to be used for space, military, and other radiation sensitive applications.
{"title":"Radiation hardened graphene field effect transistors","authors":"Konstantinos Alexandrou, A. Masurkar, H. Edrees, J. Wishart, Y. Hao, Nicholas Petrone, J. Hone, I. Kymissis","doi":"10.1109/DRC.2016.7548423","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548423","url":null,"abstract":"Our work demonstrates that both encapsulation and an insulated gate are needed to effectively produce radiation hard GFETs. Our devices successfully mitigate detrimental radiation effects which consists a significant step towards enabling graphene-based electronic devices to be used for space, military, and other radiation sensitive applications.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127594494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548435
Tejas R. Naik, R. Krishnan, Priyanka Kumari, M. Ravikanth, V. Rao
A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on silicon is done using contact angle, FTIR, UV-Vis, etc. The doping is confirmed using SIMS and four-probe measurement (sheet resistance). MISCAP devices, pn junction diodes using the above technique are fabricated and characterized using capacitance-voltage (CV) and current-voltage (IV) measurements. SAM layer is utilized for doping in 3D fin like structures.
{"title":"Novel hydroxy-phenyl phosphorus porphyrin self-assembled monolayers for conformal n-type doping in Finfets","authors":"Tejas R. Naik, R. Krishnan, Priyanka Kumari, M. Ravikanth, V. Rao","doi":"10.1109/DRC.2016.7548435","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548435","url":null,"abstract":"A controllable and selective process for doping is essential for current CMOS technology, and with the advent of FinFETs, necessity for conformal doping has become inevitable. In this work, we demonstrate formation of novel phosphorus porphyrin self-assembled monolayers(SAMs) on silicon substrate to dope silicon with phosphorus (n-type doping). Detailed physical characterization of SAMs formed on silicon is done using contact angle, FTIR, UV-Vis, etc. The doping is confirmed using SIMS and four-probe measurement (sheet resistance). MISCAP devices, pn junction diodes using the above technique are fabricated and characterized using capacitance-voltage (CV) and current-voltage (IV) measurements. SAM layer is utilized for doping in 3D fin like structures.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127677411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548483
M. Yogeesh, Hsiao-Yu Chang, Wei Li, S. Rahimi, A. Rai, A. Sanne, R. Ghosh, S. Banerjee, D. Akinwande
There is a growing interest in the design of novel flexible electronics for future internet of things (IoT) systems [1]. IoT requires design of low power RF electronics operating at GHz frequency range. Molybdenum disulphide (MoS2) is the prototypical transitional metal dichalcogenide (TMD) affording a large semiconducting bandgap (1.8eV), high saturation velocity, good mechanical strength, high mobility (> 50cm2/Vs), high on/off ratio (> 106), good current saturation and GHz RF performance [2]. In this work, we demonstrate wafer scale monolayer MoS2 based flexible RF nanoelectronics that can be used for low power nanoelectronics and flexible IoT systems.
{"title":"Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems","authors":"M. Yogeesh, Hsiao-Yu Chang, Wei Li, S. Rahimi, A. Rai, A. Sanne, R. Ghosh, S. Banerjee, D. Akinwande","doi":"10.1109/DRC.2016.7548483","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548483","url":null,"abstract":"There is a growing interest in the design of novel flexible electronics for future internet of things (IoT) systems [1]. IoT requires design of low power RF electronics operating at GHz frequency range. Molybdenum disulphide (MoS2) is the prototypical transitional metal dichalcogenide (TMD) affording a large semiconducting bandgap (1.8eV), high saturation velocity, good mechanical strength, high mobility (> 50cm2/Vs), high on/off ratio (> 106), good current saturation and GHz RF performance [2]. In this work, we demonstrate wafer scale monolayer MoS2 based flexible RF nanoelectronics that can be used for low power nanoelectronics and flexible IoT systems.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"R-29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126627723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548402
N. Shukla, M. Jerry, H. Nair, M. Barth, D. Schlom, S. Datta
We have investigated the electrically induced IMT in Ca2RuO4 thin films whose transition temperature has been increased by >190 K (TIMT > 550K) using epitaxial strain engineering. We show using DC and transient I-V measurements that the electrically induced phase transition is electro-thermal in nature, and is driven by current induced self-heating.
采用外延应变工程技术研究了转变温度提高>190 K (TIMT > 550K)的Ca2RuO4薄膜的电致IMT。我们使用直流和瞬态I-V测量表明，电诱导相变本质上是电热的，并且是由电流诱导的自加热驱动的。
{"title":"Electrically driven reversible insulator-metal phase transition in Ca2RuO4","authors":"N. Shukla, M. Jerry, H. Nair, M. Barth, D. Schlom, S. Datta","doi":"10.1109/DRC.2016.7548402","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548402","url":null,"abstract":"We have investigated the electrically induced IMT in Ca2RuO4 thin films whose transition temperature has been increased by >190 K (TIMT > 550K) using epitaxial strain engineering. We show using DC and transient I-V measurements that the electrically induced phase transition is electro-thermal in nature, and is driven by current induced self-heating.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123817379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7676130
E. Yalon, C. McClellan, K. Smithe, Y. C. Shin, R. Xu, E. Pop
We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.
{"title":"Direct observation of power dissipation in monolayer MoS2 devices","authors":"E. Yalon, C. McClellan, K. Smithe, Y. C. Shin, R. Xu, E. Pop","doi":"10.1109/DRC.2016.7676130","DOIUrl":"https://doi.org/10.1109/DRC.2016.7676130","url":null,"abstract":"We studied power dissipation in 1L MoS2 devices using Raman thermometry for the first time. We uncovered non-uniformities of power dissipation and the important role of the MoS2-substrate interface thermal resistance. These results provide critical insights for thermal design of devices based on 2D materials. This work was supported by the AFOSR, NSF EFRI 2-DARE, and Stanford SystemX.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"201 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131954635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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