Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548453
M. Hasan, P. Gaillardon, B. Sensale‐Rodriguez
To: (i) reduce the power consumption in digital integrated circuits, (ii) increase the transistor trans-conductance generation efficiency in analog circuits, and (iii) attain a very sensitive nonlinear response to RF, transistors exhibiting very steep room-temperature subthreshold slope (SS) are required. The subthreshold slope of conventional MOSFETs is limited to >60mV/dec due to their current turn-on mechanism being thermionic emission. During the last decade, several emerging transistor concepts, based on alternative current transport mechanisms, have been proposed so to overcome this fundamental limitation. For instance, Tunnel FETs (TFETs) have emerged as one of the most attractive alternatives to traditional MOSFETs, with experimental demonstrations of SS below 30 mV/dec, due to the current turn-on mechanism in such devices being band-to-band tunneling. In this context, dual-independent-gate (DIG) FinFETs have been also demonstrated capable of achieving a very steep subthreshold slope [1, 2]. The reason behind this super steep slope is a positive feedback induced by weak impact ionization in the device. Experimental demonstrations of DIG FinFETs have shown SS of 3.4 mV/dec at room-temperature over 5 decades of current swing [1, 2]. In this paper, we discuss a simple, closed-form analytic model for the current-voltage characteristics of DIG FinFETs, which can be of interest for many applications including circuit-design and application oriented device performance evaluation.
{"title":"A compact DC model for dual-independent-gate FinFETs","authors":"M. Hasan, P. Gaillardon, B. Sensale‐Rodriguez","doi":"10.1109/DRC.2016.7548453","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548453","url":null,"abstract":"To: (i) reduce the power consumption in digital integrated circuits, (ii) increase the transistor trans-conductance generation efficiency in analog circuits, and (iii) attain a very sensitive nonlinear response to RF, transistors exhibiting very steep room-temperature subthreshold slope (SS) are required. The subthreshold slope of conventional MOSFETs is limited to >60mV/dec due to their current turn-on mechanism being thermionic emission. During the last decade, several emerging transistor concepts, based on alternative current transport mechanisms, have been proposed so to overcome this fundamental limitation. For instance, Tunnel FETs (TFETs) have emerged as one of the most attractive alternatives to traditional MOSFETs, with experimental demonstrations of SS below 30 mV/dec, due to the current turn-on mechanism in such devices being band-to-band tunneling. In this context, dual-independent-gate (DIG) FinFETs have been also demonstrated capable of achieving a very steep subthreshold slope [1, 2]. The reason behind this super steep slope is a positive feedback induced by weak impact ionization in the device. Experimental demonstrations of DIG FinFETs have shown SS of 3.4 mV/dec at room-temperature over 5 decades of current swing [1, 2]. In this paper, we discuss a simple, closed-form analytic model for the current-voltage characteristics of DIG FinFETs, which can be of interest for many applications including circuit-design and application oriented device performance evaluation.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133950801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7676205
K. Konishi, K. Goto, Q. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, S. Yamakoshi, M. Higashiwaki
We succeeded in fabricating HVPE-grown Ga2O3 FP-SBDs with a record Vbr of over 1 kV. This is an important step in the research and development of Ga2O3 power devices toward practical applications and future commercialization. This work was partially supported by Council for Science, Technology, and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), "Next-generation power electronics" (funding agency: NEDO).
{"title":"Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV","authors":"K. Konishi, K. Goto, Q. Thieu, R. Togashi, H. Murakami, Y. Kumagai, B. Monemar, A. Kuramata, S. Yamakoshi, M. Higashiwaki","doi":"10.1109/DRC.2016.7676205","DOIUrl":"https://doi.org/10.1109/DRC.2016.7676205","url":null,"abstract":"We succeeded in fabricating HVPE-grown Ga<sub>2</sub>O<sub>3</sub> FP-SBDs with a record V<sub>br</sub> of over 1 kV. This is an important step in the research and development of Ga<sub>2</sub>O<sub>3</sub> power devices toward practical applications and future commercialization. This work was partially supported by Council for Science, Technology, and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), \"Next-generation power electronics\" (funding agency: NEDO).","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134194221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548448
J. M. Nassar, Marlon Diaz, M. Hussain
We report an ultra-low cost flexible proximity sensor using only off-the-shelf recyclable materials such as aluminum foil, napkin and double-sided tape. Unlike previous reports, our device structure exhibits two sensing capabilities in one platform, with outstanding long detection range of 20 cm and pressure sensitivity of 0.05 kPa-1. This is the first ever demonstration of a low-cost, accessible, and batch manufacturing process for pressure and proximity sensing on a singular platform. The mechanical flexibility of the sensor makes it possible to mount on various irregular platforms, which is vital in many areas, such as robotics, machine automation, vehicular technology and inspection tools.
{"title":"Affordable dual-sensing proximity sensor for touchless interactive systems","authors":"J. M. Nassar, Marlon Diaz, M. Hussain","doi":"10.1109/DRC.2016.7548448","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548448","url":null,"abstract":"We report an ultra-low cost flexible proximity sensor using only off-the-shelf recyclable materials such as aluminum foil, napkin and double-sided tape. Unlike previous reports, our device structure exhibits two sensing capabilities in one platform, with outstanding long detection range of 20 cm and pressure sensitivity of 0.05 kPa-1. This is the first ever demonstration of a low-cost, accessible, and batch manufacturing process for pressure and proximity sensing on a singular platform. The mechanical flexibility of the sensor makes it possible to mount on various irregular platforms, which is vital in many areas, such as robotics, machine automation, vehicular technology and inspection tools.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114820819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548503
M. Jerry, Wei-Yu Tsai, Baihua Xie, Xueqing Li, V. Narayanan, A. Raychowdhury, S. Datta
Spiking neural networks are expected to play a vital role in realizing ultra-low power hardware for computer vision applications [1]. While the algorithmic efficiency is promising, their solid-state implementation with traditional CMOS transistors lead to area expensive solutions. Transistors are typically designed and optimized to perform as switches and do not naturally exhibit the dynamical properties of neurons. In this work, we harness the abrupt insulator-to-metal transition (IMT) in a prototypical IMT material, vanadium dioxide (VO2) [2], to experimentally demonstrate a compact integrate and fire spiking neuron [3]. Further, we show multiple spiking dynamics of the neuron relevant to implementing `winner take all' max pooling layers employed in image processing pipelines.
{"title":"Phase transition oxide neuron for spiking neural networks","authors":"M. Jerry, Wei-Yu Tsai, Baihua Xie, Xueqing Li, V. Narayanan, A. Raychowdhury, S. Datta","doi":"10.1109/DRC.2016.7548503","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548503","url":null,"abstract":"Spiking neural networks are expected to play a vital role in realizing ultra-low power hardware for computer vision applications [1]. While the algorithmic efficiency is promising, their solid-state implementation with traditional CMOS transistors lead to area expensive solutions. Transistors are typically designed and optimized to perform as switches and do not naturally exhibit the dynamical properties of neurons. In this work, we harness the abrupt insulator-to-metal transition (IMT) in a prototypical IMT material, vanadium dioxide (VO2) [2], to experimentally demonstrate a compact integrate and fire spiking neuron [3]. Further, we show multiple spiking dynamics of the neuron relevant to implementing `winner take all' max pooling layers employed in image processing pipelines.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116046836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548515
R. Kirste, B. Sarkar, F. Kaess, I. Bryan, Z. Bryan, J. Tweedie, R. Collazo, Z. Sitar
Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized yet, mainly due to technical and scientific barriers arising from the lack of proper crystalline substrates and poor understanding of defect control in the wide bandgap semiconductors. In addition to low dislocation density, reduction in non-radiative centers and compensating point defect is required to achieve high internal quantum efficiency (IQE). AlGaN-based technology developed on single crystalline AlN substrates offers a pathway to address these challenges [1, 2]. Recently, UV LEDs emitting at 265 nm with output powers exceeding 80 mW and high reliability [3], as well as low-threshold, optically pumped lasers emitting at wavelengths between 230-280 nm [4,5] have been demonstrated.
{"title":"Challenges and breakthroughs in the development of AlGaN-based UVC lasers","authors":"R. Kirste, B. Sarkar, F. Kaess, I. Bryan, Z. Bryan, J. Tweedie, R. Collazo, Z. Sitar","doi":"10.1109/DRC.2016.7548515","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548515","url":null,"abstract":"Despite the rapid progress in III-nitride-based laser diodes, sub-300 nm UV semiconductors lasers have not been realized yet, mainly due to technical and scientific barriers arising from the lack of proper crystalline substrates and poor understanding of defect control in the wide bandgap semiconductors. In addition to low dislocation density, reduction in non-radiative centers and compensating point defect is required to achieve high internal quantum efficiency (IQE). AlGaN-based technology developed on single crystalline AlN substrates offers a pathway to address these challenges [1, 2]. Recently, UV LEDs emitting at 265 nm with output powers exceeding 80 mW and high reliability [3], as well as low-threshold, optically pumped lasers emitting at wavelengths between 230-280 nm [4,5] have been demonstrated.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"706 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116100314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548464
B. Romanczyk, S. Wienecke, M. Guidry, Haoran Li, K. Hestroffer, E. Ahmadi, Xun Zheng, S. Keller, U. Mishra
GaN based high electron mobility transistors have emerged as a leading technology for mm-wave solid state power amplification at W-band. To date, reports on W-band GaN HEMTs and MMICs have primarily featured devices grown in the Ga-polar orientation [1, 2]. In this work, the advantages of the N-polar orientation are exploited to produce a MISHEMT exhibiting record high 4.2 W/mm peak output power (Pout) at 94 GHz. The key enabling advantage of N-polar GaN devices are their inverted polarization fields. These fields create a natural, charge-inducing back-barrier that decouples the tradeoff between aspect ratio and channel electron density. Further, the reversed field in an AlGaN cap above the GaN channel opposes gate leakage and improves breakdown voltage [3]. Additionally, to mitigate surface-state induced dispersion and enhance the conductivity of the access regions, a GaN cap layer is added in the access regions through which the gate is recessed [4]. The fabrication process reported in this paper extends that of [4, 5] to have the foot gate metal deposited in a self-aligned fashion to the GaN cap recess etch.
{"title":"mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire","authors":"B. Romanczyk, S. Wienecke, M. Guidry, Haoran Li, K. Hestroffer, E. Ahmadi, Xun Zheng, S. Keller, U. Mishra","doi":"10.1109/DRC.2016.7548464","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548464","url":null,"abstract":"GaN based high electron mobility transistors have emerged as a leading technology for mm-wave solid state power amplification at W-band. To date, reports on W-band GaN HEMTs and MMICs have primarily featured devices grown in the Ga-polar orientation [1, 2]. In this work, the advantages of the N-polar orientation are exploited to produce a MISHEMT exhibiting record high 4.2 W/mm peak output power (Pout) at 94 GHz. The key enabling advantage of N-polar GaN devices are their inverted polarization fields. These fields create a natural, charge-inducing back-barrier that decouples the tradeoff between aspect ratio and channel electron density. Further, the reversed field in an AlGaN cap above the GaN channel opposes gate leakage and improves breakdown voltage [3]. Additionally, to mitigate surface-state induced dispersion and enhance the conductivity of the access regions, a GaN cap layer is added in the access regions through which the gate is recessed [4]. The fabrication process reported in this paper extends that of [4, 5] to have the foot gate metal deposited in a self-aligned fashion to the GaN cap recess etch.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124762679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548407
Hong Zhou, Karynn A. Sutherlin, X. Lou, Sang Bok Kim, K. Chabak, R. Gordon, P. Ye
High performance deep sub-micron T-gate AlGaN/GaN MOSHEMTs are demonstrated using lattice matched ALE MgCaO as gate dielectric. The 120 nm-Lg MOSHEMT has an IDMAX of 1.2 A/mm, Ron of 1.5 Ω·mm, a ft/fmax of 101/150 GHz, with negligible hysteresis and IG, showing the promise as a GaN MOS technology. The work at Purdue University is supported by AFOSR and the work at Harvard University is supported by ONR.
{"title":"DC and RF characterizations of AlGaN/GaN MOSHEMTs with deep sub-micron T-gates and atomic layer epitaxy MgCaO as gate dielectric","authors":"Hong Zhou, Karynn A. Sutherlin, X. Lou, Sang Bok Kim, K. Chabak, R. Gordon, P. Ye","doi":"10.1109/DRC.2016.7548407","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548407","url":null,"abstract":"High performance deep sub-micron T-gate AlGaN/GaN MOSHEMTs are demonstrated using lattice matched ALE MgCaO as gate dielectric. The 120 nm-Lg MOSHEMT has an I<sub>DMAX</sub> of 1.2 A/mm, R<sub>on</sub> of 1.5 Ω·mm, a f<sub>t</sub>/f<sub>max</sub> of 101/150 GHz, with negligible hysteresis and I<sub>G</sub>, showing the promise as a GaN MOS technology. The work at Purdue University is supported by AFOSR and the work at Harvard University is supported by ONR.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124895741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548395
A. Baca, A. Armstrong, A. Allerman, E. Douglas, C. Sanchez, M. King, M. Coltrin, C. Nordquist, T. Fortune, R. Kaplar
The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.
{"title":"An AlN/Al0.85Ga0.15N high electron mobility transistor with a regrown ohmic contact","authors":"A. Baca, A. Armstrong, A. Allerman, E. Douglas, C. Sanchez, M. King, M. Coltrin, C. Nordquist, T. Fortune, R. Kaplar","doi":"10.1109/DRC.2016.7548395","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548395","url":null,"abstract":"The performance and efficiency of power devices depends on both high breakdown voltage and low on-state resistance. For semiconductor devices, the critical electric field (EC) affecting breakdown scales approximately as Eg25 [1], making the wide bandgap semiconductor materials logical candidates for high voltage power electronics devices. In particular, AlGaN alloys approaching AlN with its 6.2 eV bandgap have an estimated EC approaching 5x that of GaN. This factor makes AlN/AlGaN high election mobility transistors (HEMTs) extremely interesting as candidate power electronic devices. Until now, such devices have been hampered, ostensibly due to the difficulty of making Ohmic contacts to AlGaN alloys with high Al composition. With the use of an AlN barrier etch and regrowth procedure for Ohmic contact formation, we are now able to report on an AlN/AlGaN HEMT with 85% Al.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122895362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548469
Y. Gong, T. Jackson
We report ZnO thin film transistors (TFTs) with offset drain for high voltage operation. Offset-drain FETs using Si, a-Si:H, and pentacene have been previously demonstrated [1,2,3]. The TFTs use a bottom gate structure with Al2O3 gate dielectric and ZnO active layers deposited by plasma enhanced atomic layer deposition (PEALD). As the drain offset is increased from 0 μm to 2 μm· the drain-to-source breakdown voltage increased from 33 V to 82 V, while the linear mobility decreased from 10 cm2/Vs to 4 cm2/Vs. Our process flow is simple and compatible with glass and polymeric substrates.
{"title":"Drain-offset ZnO thin film transistors for high voltage operations","authors":"Y. Gong, T. Jackson","doi":"10.1109/DRC.2016.7548469","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548469","url":null,"abstract":"We report ZnO thin film transistors (TFTs) with offset drain for high voltage operation. Offset-drain FETs using Si, a-Si:H, and pentacene have been previously demonstrated [1,2,3]. The TFTs use a bottom gate structure with Al2O3 gate dielectric and ZnO active layers deposited by plasma enhanced atomic layer deposition (PEALD). As the drain offset is increased from 0 μm to 2 μm· the drain-to-source breakdown voltage increased from 33 V to 82 V, while the linear mobility decreased from 10 cm2/Vs to 4 cm2/Vs. Our process flow is simple and compatible with glass and polymeric substrates.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121639529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-19DOI: 10.1109/DRC.2016.7548450
Christopher J. Cullen, J. Jerothe, J. Murakowski, M. Zablocki, A. Sharkawy, D. Prather
Up-converting RF information to optical signals has become an appealing alternative for communication, besides in the realm of telecommunication, due to inherent advantages in using fiber optics. Fibers have proven to have lower loss, better bandwidth, be lighter, and as robust as conventional copper cabling. This has led to applications in intelligent traffic systems, military uses (including integration into tanks and drones), and others not explicitly stated here. Central to these systems working well is the efficient, accurate up-converting of an RF signal; it is here that the roll of the electro-optic modulator is introduced into the system. The more efficient and linear these modulators can be, the more accurately the data can be up-converted, and the less power required perform the conversion. There have been efforts to increase efficiency by developing materials with higher intrinsic χ(2) nonlinearity [1], and developing structures to increase field interaction magnitude with the material [2]-[4], but not without limiting the bandwidth of the device. In this work, we explore a novel modulation scheme to up efficiency and linearity without sacrificing bandwidth.
{"title":"Recycled carrier modulation using Fabry-Perot resonance","authors":"Christopher J. Cullen, J. Jerothe, J. Murakowski, M. Zablocki, A. Sharkawy, D. Prather","doi":"10.1109/DRC.2016.7548450","DOIUrl":"https://doi.org/10.1109/DRC.2016.7548450","url":null,"abstract":"Up-converting RF information to optical signals has become an appealing alternative for communication, besides in the realm of telecommunication, due to inherent advantages in using fiber optics. Fibers have proven to have lower loss, better bandwidth, be lighter, and as robust as conventional copper cabling. This has led to applications in intelligent traffic systems, military uses (including integration into tanks and drones), and others not explicitly stated here. Central to these systems working well is the efficient, accurate up-converting of an RF signal; it is here that the roll of the electro-optic modulator is introduced into the system. The more efficient and linear these modulators can be, the more accurately the data can be up-converted, and the less power required perform the conversion. There have been efforts to increase efficiency by developing materials with higher intrinsic χ(2) nonlinearity [1], and developing structures to increase field interaction magnitude with the material [2]-[4], but not without limiting the bandwidth of the device. In this work, we explore a novel modulation scheme to up efficiency and linearity without sacrificing bandwidth.","PeriodicalId":310524,"journal":{"name":"2016 74th Annual Device Research Conference (DRC)","volume":"50 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127236234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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