Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542280
V. A. Miroshnichenko, E. R. Kozhanova, A. Miroshnichenko
The research of parameters of the 8-element «Yagi antenna» and it directional patterns versus altitude above the ground at LTE range frequencies has been conducted in the MMANA code. On the basis of results MMANA modeling, a code «Calculation of losses» in the C# software environment for calculation of losses by transfer from the base station (BS) to the abonent station (AS) in 4G networks LTE had developed. This program allows calculating losses between the base and abonent stations depending of the terrain type and the antenna height.
{"title":"Study the Possibility of Optimizing Antenna Systems, for the Complex Landscape in LTE Networks","authors":"V. A. Miroshnichenko, E. R. Kozhanova, A. Miroshnichenko","doi":"10.1109/APEDE.2018.8542280","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542280","url":null,"abstract":"The research of parameters of the 8-element «Yagi antenna» and it directional patterns versus altitude above the ground at LTE range frequencies has been conducted in the MMANA code. On the basis of results MMANA modeling, a code «Calculation of losses» in the C# software environment for calculation of losses by transfer from the base station (BS) to the abonent station (AS) in 4G networks LTE had developed. This program allows calculating losses between the base and abonent stations depending of the terrain type and the antenna height.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114345660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542327
A. S. Serebryakova, S. Maslennikov
This paper presents results of study on the development of high-voltage solid-state switches based on MOSFETs for application in pulse grid modulators of high-power microwave devices. The high-voltage switches with module structure and operating voltages of up to 10 kV and pulsed currents of up to 12 A were experimentally implemented. The specially designed switches were used in output stages of the solid-state high-voltage microsecond generators. The tests carried out in laboratories of the JSC «RPE “Toriy”» have shown the operation stability of the generators in the pulse duration range from 1 ¼s to 0,2 ms at amplitude voltages up to 10 kV.
{"title":"Solid-State High-Voltage Microsecond Pulse Generators for Control Circuits of Power Electrovacuum Devices","authors":"A. S. Serebryakova, S. Maslennikov","doi":"10.1109/APEDE.2018.8542327","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542327","url":null,"abstract":"This paper presents results of study on the development of high-voltage solid-state switches based on MOSFETs for application in pulse grid modulators of high-power microwave devices. The high-voltage switches with module structure and operating voltages of up to 10 kV and pulsed currents of up to 12 A were experimentally implemented. The specially designed switches were used in output stages of the solid-state high-voltage microsecond generators. The tests carried out in laboratories of the JSC «RPE “Toriy”» have shown the operation stability of the generators in the pulse duration range from 1 ¼s to 0,2 ms at amplitude voltages up to 10 kV.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125959656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542451
G. Akchurin, Y. Avetisyan, N. Aban'shin, A. Yakunin
A phenomenological model of tunneling of electrons into vacuum from a composite nanostructure - a dielectric film of diamond-like carbon on a molybdenum base - is constructed. Three mechanisms of field emission from the metal-dielectric-vacuum structure are taken into account, assuming continuity of the injection-drift-emission current density. A qualitative correspondence of the character of calculated current characteristics to the result of an experimental study is obtained.
{"title":"Model of Tunneling Processes in Composite Nanostructures for Vacuum Field- and Photoemission Devices","authors":"G. Akchurin, Y. Avetisyan, N. Aban'shin, A. Yakunin","doi":"10.1109/APEDE.2018.8542451","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542451","url":null,"abstract":"A phenomenological model of tunneling of electrons into vacuum from a composite nanostructure - a dielectric film of diamond-like carbon on a molybdenum base - is constructed. Three mechanisms of field emission from the metal-dielectric-vacuum structure are taken into account, assuming continuity of the injection-drift-emission current density. A qualitative correspondence of the character of calculated current characteristics to the result of an experimental study is obtained.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126795439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542462
A. Bolshakov, I. Veshneva
Results of an estimation of efficiency of use of a method of status functions at realization of corresponding administrative decisions at the organization of process of training are present. The methodology for calculating effectiveness estimates in the determination of management decisions are propose. Estimates of a priori and a posteriori effectiveness are given, including: organizational, economic, social and technological aspects.
{"title":"Assessment of the Effectiveness of Decision Support in the Application of the Information System for Monitoring the Process of Forming Competences Based on Status Functions","authors":"A. Bolshakov, I. Veshneva","doi":"10.1109/APEDE.2018.8542462","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542462","url":null,"abstract":"Results of an estimation of efficiency of use of a method of status functions at realization of corresponding administrative decisions at the organization of process of training are present. The methodology for calculating effectiveness estimates in the determination of management decisions are propose. Estimates of a priori and a posteriori effectiveness are given, including: organizational, economic, social and technological aspects.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127119299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542365
I. Filippov, D. A. Snegur, V. Vertegel
Active electronically scanned arrays (AESAs) are widely used in defense industry and telecommunications. Such systems have potential for development in the field of special and consumer electronics (GSM, Wi-Fi, WiMAX, LTE, fifth generation of mobile network communication technology, satellite navigation and communications). In contrast to passive phased arrays, AESA have additional sources of signal errors due to the presence of active transceiver modules in each channel of the array, the characteristics of which are different at each time due to the influence of destabilizing factors (temperature, change in supply voltages etc.). Thus, there is a need for a block of transceiver module parameters correction based on integrated temperature sensor. Simulation results of integrated temperature sensor designed in $0.18 mu text{m}$ SiGe BiCMOS technology are presented. It provides temperature measurement in −60—85°C range with 5-bit resolution. Absolute error of measurements is less than 1°C. Power consumption of the sensor is less than 17 mW. Chip area is 0,018 mm2.
有源电子扫描阵列(AESAs)广泛应用于国防工业和电信领域。这种系统在特殊和消费电子(GSM, Wi-Fi, WiMAX, LTE，第五代移动网络通信技术，卫星导航和通信)领域具有发展潜力。与无源相控阵相比，有源相控阵由于在阵列的每个通道中存在有源收发模块而具有额外的信号误差源，由于不稳定因素(温度、电源电压变化等)的影响，其每次的特性都是不同的。因此，需要一个基于集成温度传感器的收发模块参数校正块。给出了以$0.18 mu text{m}$ SiGe BiCMOS技术设计的集成温度传感器的仿真结果。它提供−60-85°C范围内的温度测量，分辨率为5位。测量的绝对误差小于1°C。传感器功耗小于17mw。芯片面积为0,018 mm2。
{"title":"Design of Integrated Temperature Sensor for Aesa Transceiver Parameters Correction System","authors":"I. Filippov, D. A. Snegur, V. Vertegel","doi":"10.1109/APEDE.2018.8542365","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542365","url":null,"abstract":"Active electronically scanned arrays (AESAs) are widely used in defense industry and telecommunications. Such systems have potential for development in the field of special and consumer electronics (GSM, Wi-Fi, WiMAX, LTE, fifth generation of mobile network communication technology, satellite navigation and communications). In contrast to passive phased arrays, AESA have additional sources of signal errors due to the presence of active transceiver modules in each channel of the array, the characteristics of which are different at each time due to the influence of destabilizing factors (temperature, change in supply voltages etc.). Thus, there is a need for a block of transceiver module parameters correction based on integrated temperature sensor. Simulation results of integrated temperature sensor designed in $0.18 mu text{m}$ SiGe BiCMOS technology are presented. It provides temperature measurement in −60—85°C range with 5-bit resolution. Absolute error of measurements is less than 1°C. Power consumption of the sensor is less than 17 mW. Chip area is 0,018 mm2.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131324932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542251
S. Bushanskiy, V. Komarov
Structure of a new type cavity of rectangular shape with a central metallic core is considered. The influence of internal dimensions (core radius) on the eigenfrequencies and the eigenfunctions of electromagnetic field of the two lowest H- and E-modes of such concentric resonator are determined with the help of the finite element method. Moreover parameters of scattering matrix of rectangular concentric resonator with coaxial input and output ports are investigated for the Ka-band. Possibility of realization of small-sized bandpass filter on its basis is shown. Factors influencing on the reflection coefficient in the pass band are analyzed.
{"title":"Investigation of Parameters of Rectangular Concentric Resonator","authors":"S. Bushanskiy, V. Komarov","doi":"10.1109/APEDE.2018.8542251","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542251","url":null,"abstract":"Structure of a new type cavity of rectangular shape with a central metallic core is considered. The influence of internal dimensions (core radius) on the eigenfrequencies and the eigenfunctions of electromagnetic field of the two lowest H- and E-modes of such concentric resonator are determined with the help of the finite element method. Moreover parameters of scattering matrix of rectangular concentric resonator with coaxial input and output ports are investigated for the Ka-band. Possibility of realization of small-sized bandpass filter on its basis is shown. Factors influencing on the reflection coefficient in the pass band are analyzed.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":" 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113950736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542242
A. Agafonov, M. Gorbunov, M. G. Petrov, D. S. Stepanov, E. Shkolnikov
This article considers opportunity of the gas-filled neutron tube's ion source modeling by the KARAT code. To increase the efficiency of registration equipment in oil and gas logging, it is necessary to significantly reduce the duration of the neutron pulse front. To verify the adequacy of the numerical model, the experimental oscillograms of the extracted ion current and the discharge current was compared with the oscillograms obtained by simulating the work of gas-filled neutron tube GNT1-32 by the KARAT code under the same conditions. Despite the fact that the experimental oscillograms had a wide spread from pulse to pulse, the comparison showed a satisfactory agreement with the calculated data for such key parameters as the front time and pulse amplitude for both the extracted and the discharge current.
{"title":"Gas-Filled Neutron Tube's Ion Source Modeling by the Karat Code","authors":"A. Agafonov, M. Gorbunov, M. G. Petrov, D. S. Stepanov, E. Shkolnikov","doi":"10.1109/APEDE.2018.8542242","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542242","url":null,"abstract":"This article considers opportunity of the gas-filled neutron tube's ion source modeling by the KARAT code. To increase the efficiency of registration equipment in oil and gas logging, it is necessary to significantly reduce the duration of the neutron pulse front. To verify the adequacy of the numerical model, the experimental oscillograms of the extracted ion current and the discharge current was compared with the oscillograms obtained by simulating the work of gas-filled neutron tube GNT1-32 by the KARAT code under the same conditions. Despite the fact that the experimental oscillograms had a wide spread from pulse to pulse, the comparison showed a satisfactory agreement with the calculated data for such key parameters as the front time and pulse amplitude for both the extracted and the discharge current.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125199126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542454
R. Yafarov, D. Nefedov
The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.
{"title":"Formation and Influence of the Built-In Surface Potentials on the Transversal Electronic Transport and the VAC of Silicon MIS Structures","authors":"R. Yafarov, D. Nefedov","doi":"10.1109/APEDE.2018.8542454","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542454","url":null,"abstract":"The regularities of the modification of the current-voltage characteristics of MIS structures due to the formation of built-in surface potentials are investigated. Surface potentials are formed when an atomically clean surface of silicon crystals is obtained using microwave plasma microprocessing. Microwave plasma microprocessing was carried out in various chemically active gas media. The interpretation of the effect of surface potentials on transversal electron transport and the steepness of the current-voltage characteristics of silicon MIS devices has been experimentally established and proposed.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131271462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542282
S. A. Odincov, A. Sadovnikov
The surface and backward volume magnetostatic spin waves propagation in the side-coupled magnonic micro- nanowaveguides was numerically studied. The dispersion characteristics was calculated using the modification of finite element method. The transformation of the frequency dependence of the coupling length with the variation of the geometrical parameters was investigated. The cases of surface and backward volume magnetostatic waves were considered. It was shown that the coupling length is increased in the surface wave geometry. The influence of the external bias magnetic field orientation on the spectra of wave in lateral structures was demonstrated. The neuromorphic network of lateral stripes can be used in the pattern recognition methods.
{"title":"Directional Microwave Coupler Based on Neuromorphic Network of Lateral Magnetic Micro- and Nanowaveguides","authors":"S. A. Odincov, A. Sadovnikov","doi":"10.1109/APEDE.2018.8542282","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542282","url":null,"abstract":"The surface and backward volume magnetostatic spin waves propagation in the side-coupled magnonic micro- nanowaveguides was numerically studied. The dispersion characteristics was calculated using the modification of finite element method. The transformation of the frequency dependence of the coupling length with the variation of the geometrical parameters was investigated. The cases of surface and backward volume magnetostatic waves were considered. It was shown that the coupling length is increased in the surface wave geometry. The influence of the external bias magnetic field orientation on the spectra of wave in lateral structures was demonstrated. The neuromorphic network of lateral stripes can be used in the pattern recognition methods.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"41 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128218797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/APEDE.2018.8542277
A. S. Serebryakova, S. Maslennikov
A solid-state pulse generator for power-supply systems of magnetrons with cold cathodes was developed. The generator, designed for output high-voltage pulses of 15 kV / 0,5 ¼s, uses a pulsed transformer circuit for transferring voltage to the load. The switching unit of the generator is based on the high-voltage semiconductor switches with series-parallel connection of IGBT-transistors. The results of the tests carried out at JSC “RPE «Toriy”» showed the stable operation of generator and the possibility of its using in the pulsed power-supply systems of microwave devices for various applications.
{"title":"Solid-State Generator in Supply System of Dinamic Test Stand of Magnetrons with Cold Cathodes","authors":"A. S. Serebryakova, S. Maslennikov","doi":"10.1109/APEDE.2018.8542277","DOIUrl":"https://doi.org/10.1109/APEDE.2018.8542277","url":null,"abstract":"A solid-state pulse generator for power-supply systems of magnetrons with cold cathodes was developed. The generator, designed for output high-voltage pulses of 15 kV / 0,5 ¼s, uses a pulsed transformer circuit for transferring voltage to the load. The switching unit of the generator is based on the high-voltage semiconductor switches with series-parallel connection of IGBT-transistors. The results of the tests carried out at JSC “RPE «Toriy”» showed the stable operation of generator and the possibility of its using in the pulsed power-supply systems of microwave devices for various applications.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130643668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：