Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998662
J. Priesol, A. Šatka, L. Sladek, M. Bernat, D. Donoval
This contribution deals with the detection and analysis of electroluminescence emitted by depletion mode (normally-on) InAlN/GaN heterostructure field effect transistors (HFETs) at room temperature and drain-source voltages ranging from 20 to 30 V. Collected electroluminescence maps are used to reveal and localize strong electrically stressed and critical regions of GaN HFETs influencing their functionality and reliability. Such defective regions have been observed along gate fingers as well as at the edges of the drain contact pad expanded outside the transistor structure itself. Identification of observed HFET imperfections provides a valuable feedback towards the optimization of HFET's technology with positive impact on the quality and overall electronic performance of such advanced electronic devices.
{"title":"Investigation of defects in GaN HFET structures by electroluminescence","authors":"J. Priesol, A. Šatka, L. Sladek, M. Bernat, D. Donoval","doi":"10.1109/ASDAM.2014.6998662","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998662","url":null,"abstract":"This contribution deals with the detection and analysis of electroluminescence emitted by depletion mode (normally-on) InAlN/GaN heterostructure field effect transistors (HFETs) at room temperature and drain-source voltages ranging from 20 to 30 V. Collected electroluminescence maps are used to reveal and localize strong electrically stressed and critical regions of GaN HFETs influencing their functionality and reliability. Such defective regions have been observed along gate fingers as well as at the edges of the drain contact pad expanded outside the transistor structure itself. Identification of observed HFET imperfections provides a valuable feedback towards the optimization of HFET's technology with positive impact on the quality and overall electronic performance of such advanced electronic devices.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133241167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998701
D. O'Mahony, P. Parbrook, B. Corbett, J. Kovác, M. Florovič, A. Vincze
This paper reports on the optical and electrical characteristics of III-nitride epi-structures for visible wavelength absorption. Structures, incorporating InxGa1-xN/GaN (0.20<;x<;0.35) quantum well active regions have been analysed by photocurrent spectroscopy, optical transmission and electro/photo-luminescence techniques to identify the key spectral absorption characteristics of the structures. In addition the influence of indium composition and number of quantum wells on the spectral response of such structures was investigated. In order to demonstrate the effect of different indium compositions on the photovoltaic performance of an InGaN solar cell, an active silicon solar cell was stacked under two InGaN structures with differing indium composition. For higher indium composition, a lower spectral response is observed at zero bias and correspondingly lower quantum efficiency by a factor of approximately two. The obtained results provide insight how multi-junction solar cells incorporating III-nitride solar cells might be designed in a multi-junction configuration in order to boost the overall efficiency of conventional cell materials such as silicon.
{"title":"Spectral analysis of InXGa1−xN/GaN quantum well structures for III-nitride based solar cells","authors":"D. O'Mahony, P. Parbrook, B. Corbett, J. Kovác, M. Florovič, A. Vincze","doi":"10.1109/ASDAM.2014.6998701","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998701","url":null,"abstract":"This paper reports on the optical and electrical characteristics of III-nitride epi-structures for visible wavelength absorption. Structures, incorporating InxGa1-xN/GaN (0.20<;x<;0.35) quantum well active regions have been analysed by photocurrent spectroscopy, optical transmission and electro/photo-luminescence techniques to identify the key spectral absorption characteristics of the structures. In addition the influence of indium composition and number of quantum wells on the spectral response of such structures was investigated. In order to demonstrate the effect of different indium compositions on the photovoltaic performance of an InGaN solar cell, an active silicon solar cell was stacked under two InGaN structures with differing indium composition. For higher indium composition, a lower spectral response is observed at zero bias and correspondingly lower quantum efficiency by a factor of approximately two. The obtained results provide insight how multi-junction solar cells incorporating III-nitride solar cells might be designed in a multi-junction configuration in order to boost the overall efficiency of conventional cell materials such as silicon.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116417724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998697
J. Moers, N. P. Stcpina, S. Trellenkamp, D. Grutzmacher
Two and three dimensional SiGe-QD-arrays can be regarded as a test-system for artificial crystals, as they also can be utilized as single photon detectors. While arrays with randomly distributed SiGe-QD can easily be grown on plain silicon surfaces, the fabrication of ordered arrays with pitches done to a few 10 nm is challenging: to facilitate Template Assisted Self Assembled growth of SiGe-QD in MBE, ordered arrays of seed holes have to be etched into the silicon substrate. EUV-interference lithography can be employed, but here no spatial relation to previous or later process steps is possible. In this work contrast and resolution of ZEP 520A-7 is investigated in terms of development temperature, duration and acceleration voltage during e-beam exposure to obtain laterally ordered well localized SiGe-QD-arrays. By increasing acceleration voltage from 50 kV to 100 kV contrast can be improved by a factor of 1.9, shifting the resolution from 40 nm pitch seed hole arrays etched in silicon to 30 nm.
{"title":"Templates for highly ordered SiGe-QD arrays for single photon detection","authors":"J. Moers, N. P. Stcpina, S. Trellenkamp, D. Grutzmacher","doi":"10.1109/ASDAM.2014.6998697","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998697","url":null,"abstract":"Two and three dimensional SiGe-QD-arrays can be regarded as a test-system for artificial crystals, as they also can be utilized as single photon detectors. While arrays with randomly distributed SiGe-QD can easily be grown on plain silicon surfaces, the fabrication of ordered arrays with pitches done to a few 10 nm is challenging: to facilitate Template Assisted Self Assembled growth of SiGe-QD in MBE, ordered arrays of seed holes have to be etched into the silicon substrate. EUV-interference lithography can be employed, but here no spatial relation to previous or later process steps is possible. In this work contrast and resolution of ZEP 520A-7 is investigated in terms of development temperature, duration and acceleration voltage during e-beam exposure to obtain laterally ordered well localized SiGe-QD-arrays. By increasing acceleration voltage from 50 kV to 100 kV contrast can be improved by a factor of 1.9, shifting the resolution from 40 nm pitch seed hole arrays etched in silicon to 30 nm.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127982278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998640
M. Mikolasek, M. Vojs, M. Varga, O. Babchenko, T. Ižák, M. Marton, A. Kromka, L. Harmatha
The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.
{"title":"Electrical characterization of diamond films deposited in nitrogen and oxygen containing gas mixture","authors":"M. Mikolasek, M. Vojs, M. Varga, O. Babchenko, T. Ižák, M. Marton, A. Kromka, L. Harmatha","doi":"10.1109/ASDAM.2014.6998640","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998640","url":null,"abstract":"The paper deals with electrical characterization of nanocrystalline diamond / p- type crystalline silicon heterostructures. The diamond films were prepared with and without nitrogen addition into CH4/CO2/H2 gas mixture during the deposition. The introduced nitrogen promoted amorphization instead of creating sp2 domains. The structure with nitrogen exhibits shallow donor state with energy of 0.28 eV. It is suggested that origin of such a state is related to nitrogen atoms trapped at the vacancies.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131687821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998642
P. Boháček, B. Zat’ko, A. Šagátová, P. Hybler, M. Sekáčová
The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility increase with increasing cumulative electron dose. The electron Hall mobility increased from 6950 cm2/Vs to about 7680 cm2/Vs at 300 K both samples irradiated with the cumulative electron dose of 24 kGy.
{"title":"Electrical properties of semi-insulating GaAs irradiated with 5 MeV electrons","authors":"P. Boháček, B. Zat’ko, A. Šagátová, P. Hybler, M. Sekáčová","doi":"10.1109/ASDAM.2014.6998642","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998642","url":null,"abstract":"The resistivity, Hall coefficient, Hall mobility, and Hall concentration in undoped semi-insulating GaAs samples irradiated by 5 MeV electrons of various cumulative doses ranging from 1kGy to 24 kGy and different dose rate were measured and analysed at the temperature 400 K and 300 K. The resistivity and the electron Hall concentration decrease while Hall coefficient and the electron Hall mobility increase with increasing cumulative electron dose. The electron Hall mobility increased from 6950 cm2/Vs to about 7680 cm2/Vs at 300 K both samples irradiated with the cumulative electron dose of 24 kGy.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122862264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998638
J. Nevrela, M. Micjan, M. Novota, S. Flickyngerová, J. Kováč, M. Pavúk, P. Juhasz, J. Jakabovic, M. Weis
The structural, optical, and electrical properties of copolymer poly(3, 4-ethylenedioxythiophene):(styrenesulfonic acid) (PEDOT:PSS) thin films deposited from aqueous solution have been investigated. To increase the conductivity three different dopants have been used: dimethyl sulfoxide (DMSO), sorbitol, and ethylene glycol. Even though the dopants increase the conductivity by three orders, the surface morphology and optical properties do not change significantly. The discussion on secondary doping effect is carried out to explain the observations.
{"title":"Technology of conductive polymer PEDOT:PSS films","authors":"J. Nevrela, M. Micjan, M. Novota, S. Flickyngerová, J. Kováč, M. Pavúk, P. Juhasz, J. Jakabovic, M. Weis","doi":"10.1109/ASDAM.2014.6998638","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998638","url":null,"abstract":"The structural, optical, and electrical properties of copolymer poly(3, 4-ethylenedioxythiophene):(styrenesulfonic acid) (PEDOT:PSS) thin films deposited from aqueous solution have been investigated. To increase the conductivity three different dopants have been used: dimethyl sulfoxide (DMSO), sorbitol, and ethylene glycol. Even though the dopants increase the conductivity by three orders, the surface morphology and optical properties do not change significantly. The discussion on secondary doping effect is carried out to explain the observations.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114130950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998636
E. Lim, M. Bok, D. Taguchi, M. Iwamoto
We studied electric field distribution changes induced in the active layer of ITO/PI/TIPS-pentacene/Au diodes by carrier injection. Upon application of a step voltage to the diodes, the electric field change across the TIPS-pentacene layer was measured. Significant electric field distribution change was suggested due to the carrier injection, and a simple model that accounts for the I-V characteristics of the diodes was proposed, on the basis of the Maxwell-Wagner model. By using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements, we studied the carrier trapping mechanism in ITO/PI/TIPS-pentacene/Au diodes. Using TR-EFISHG in combination with CMS is a very effective way to study carrier behaviors in diodes, and stress-biasing effect induced in TIPS-pentacene active layer can be well identified, in terms of carrier injection and interfacial carrier accumulation.
研究了载流子注入对ITO/PI/ tips -并五烯/Au二极管活性层电场分布的影响。在对二极管施加阶跃电压后，测量了tips -五苯层上的电场变化。由于载流子注入，电场分布发生了明显的变化，并在Maxwell-Wagner模型的基础上，提出了一个解释二极管I-V特性的简单模型。通过电荷调制光谱(CMS)和时间分辨电场诱导光二次谐波(TR-EFISHG)测量，研究了ITO/PI/ tip -并五烯/Au二极管的载流子捕获机制。trf - efishg结合CMS是研究二极管中载流子行为的一种非常有效的方法，从载流子注入和界面载流子积累两方面可以很好地识别tips -并五苯活性层中诱导的应力偏置效应。
{"title":"Analysis on carrier trapping mechanism in organic diodes by charge modulation spectroscopy and electric field optical second harmonic generation measurement","authors":"E. Lim, M. Bok, D. Taguchi, M. Iwamoto","doi":"10.1109/ASDAM.2014.6998636","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998636","url":null,"abstract":"We studied electric field distribution changes induced in the active layer of ITO/PI/TIPS-pentacene/Au diodes by carrier injection. Upon application of a step voltage to the diodes, the electric field change across the TIPS-pentacene layer was measured. Significant electric field distribution change was suggested due to the carrier injection, and a simple model that accounts for the I-V characteristics of the diodes was proposed, on the basis of the Maxwell-Wagner model. By using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements, we studied the carrier trapping mechanism in ITO/PI/TIPS-pentacene/Au diodes. Using TR-EFISHG in combination with CMS is a very effective way to study carrier behaviors in diodes, and stress-biasing effect induced in TIPS-pentacene active layer can be well identified, in terms of carrier injection and interfacial carrier accumulation.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122333170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998649
J. Gryglewicz, R. Paszkiewicz, W. Macherzyński, A. Stafiniak, M. Wośko
The aim of work was to develop precise etching process of AlGaN/GaN heterostructures. The study was focused on surface parameters evolution and etch characteristics of etched layers. The surface parameters depended on selection of composition of Cl2:BCl3:Ar gas mixture, while the amount of boron trichloride in Cl2:BCl3:Ar was crucial in obtaining precise etch rate of thin AlGaN and thick uid-GaN layers. Changing of BCl3 amount in the Cl2:BCl3:Ar mixture in the range of 6% ÷ 60% resulted in increased AlGaN etch rate from 1 nm/min to 19 nm/min and uid-GaN etch rate from 11 nm/min to 55 nm/min. In case of AlGaN almost linear etch characteristic was observed. Surface morphology of uid-GaN was modified by different ratio of BCl3/Cl2.
{"title":"Precise etching of AlGaN/GaN HEMT structures with Cl2/BCL3/Ar plasma","authors":"J. Gryglewicz, R. Paszkiewicz, W. Macherzyński, A. Stafiniak, M. Wośko","doi":"10.1109/ASDAM.2014.6998649","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998649","url":null,"abstract":"The aim of work was to develop precise etching process of AlGaN/GaN heterostructures. The study was focused on surface parameters evolution and etch characteristics of etched layers. The surface parameters depended on selection of composition of Cl<sub>2</sub>:BCl<sub>3</sub>:Ar gas mixture, while the amount of boron trichloride in Cl<sub>2</sub>:BCl<sub>3</sub>:Ar was crucial in obtaining precise etch rate of thin AlGaN and thick uid-GaN layers. Changing of BCl<sub>3</sub> amount in the Cl<sub>2</sub>:BCl<sub>3</sub>:Ar mixture in the range of 6% ÷ 60% resulted in increased AlGaN etch rate from 1 nm/min to 19 nm/min and uid-GaN etch rate from 11 nm/min to 55 nm/min. In case of AlGaN almost linear etch characteristic was observed. Surface morphology of uid-GaN was modified by different ratio of BCl<sub>3</sub>/Cl<sub>2</sub>.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128389989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998700
M. Zeman, A. Ingenito, H. Tan, D. N. P. Linssen, R. Santbergen, A. Smets, O. Isabella
The effect of decoupled front/back textures and the application of photonic and plasmonic nanostructures on the performance of thin silicon solar cells was studied. New light trapping concepts based on diffraction on periodic photonic nanostructures and scattering using plasmonic structures have potential to outperform the currently used randomly textured structures. The study demonstrates that supporting layers of solar cells, such as transparent conductive oxides, doped layers and back reflectors, are responsible for significant parasitic absorption losses that prevent achieving 4n2 enhancement of light absorption in solar cells with silicon absorbers.
{"title":"Photonic and plasmonic structures for applications in solar cells","authors":"M. Zeman, A. Ingenito, H. Tan, D. N. P. Linssen, R. Santbergen, A. Smets, O. Isabella","doi":"10.1109/ASDAM.2014.6998700","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998700","url":null,"abstract":"The effect of decoupled front/back textures and the application of photonic and plasmonic nanostructures on the performance of thin silicon solar cells was studied. New light trapping concepts based on diffraction on periodic photonic nanostructures and scattering using plasmonic structures have potential to outperform the currently used randomly textured structures. The study demonstrates that supporting layers of solar cells, such as transparent conductive oxides, doped layers and back reflectors, are responsible for significant parasitic absorption losses that prevent achieving 4n2 enhancement of light absorption in solar cells with silicon absorbers.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130714952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/ASDAM.2014.6998711
A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar
In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.
{"title":"Advanced methodology for fast 3-D TCAD electrothermal simulation of power devices","authors":"A. Chvála, D. Donoval, J. Marek, P. Pribytny, M. Molnar","doi":"10.1109/ASDAM.2014.6998711","DOIUrl":"https://doi.org/10.1109/ASDAM.2014.6998711","url":null,"abstract":"In this paper the new methodology for fast 3-D electrothermal simulation of complex power devices including the package and cooling assemblies is proposed and illustrated. A power MOSFET under an unclamped inductive switching (UIS) test of the device robustness is used to perform validation of the designed electrothermal simulation. The presented simulation approach contributes to full analysis of complex structures at high speed of simulation and simplicity of implementation. The methodology is developed for co-simulation platform SMAC.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130932229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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