R. Xu, Jiaming Xie, Minyan Tang, Y. Zhu, Linjun Wang
The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er2O3 (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er2O3 on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.
{"title":"The growth of Si overlayers on Er2O3(111)/Si (111) by solid phase epitaxy","authors":"R. Xu, Jiaming Xie, Minyan Tang, Y. Zhu, Linjun Wang","doi":"10.1117/12.888362","DOIUrl":"https://doi.org/10.1117/12.888362","url":null,"abstract":"The Si overlayers were grown by solid phase epitaxy on the atomically smooth Er2O3 (111) films, which is prepared on the Si (111) substrate in optimum conditions. The twin structure was observed in the spot-like reflective high energy electron diffraction (RHEED) patterns. The rough surface of Si overlayer, as identified by both RHEED results and Atomic force microscopy (AFM) images, indicated a three dimensional growth mode in contrast to the two dimensional growth mode of Er2O3 on the Si (111) substrate. The physical origin of three dimensional grow is given based on the interfacial energy argument.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123513769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heyun Wu, Yonggang Wu, G. Lv, Zhenhua Wang, Leijie Ling, Zihuan Xia, N. Chen
A thin PI film equal to or less than 200nm was fabricated on a Zr film to improve the mechanical characteristics of the latter. The PI film was prepared by two-step process. Througth fully reaction between Pyromellitic Dianhydride (PMDA) and Oxydianiline (ODA) in Dimethylacetamide (DMAC), polyamic acid (PAA) was produced. After the deposition of Zr film on floating glass using direct-current magnetron sputtering, PAA was prepared on the Zr film through dip-coating and then thermally imidized to form the PI film. The transmission spectrum obtained by using synchrotron radiation fits with calculation result fairly well. Although the combination of the PI film with Zr film results in the decline of the transmission, the mechanical strength of the composite film is improved, and the transmittances of the Zr(300nm)/PI(200nm) and Zr(400nm)/PI(200nm) films reach 14.9% and 7.5% respectively at 13.9 nm, still satisfying the actual requirement.
{"title":"Preparation and characterization of free-standing Zr, PI and Zr/PI filter","authors":"Heyun Wu, Yonggang Wu, G. Lv, Zhenhua Wang, Leijie Ling, Zihuan Xia, N. Chen","doi":"10.1117/12.887562","DOIUrl":"https://doi.org/10.1117/12.887562","url":null,"abstract":"A thin PI film equal to or less than 200nm was fabricated on a Zr film to improve the mechanical characteristics of the latter. The PI film was prepared by two-step process. Througth fully reaction between Pyromellitic Dianhydride (PMDA) and Oxydianiline (ODA) in Dimethylacetamide (DMAC), polyamic acid (PAA) was produced. After the deposition of Zr film on floating glass using direct-current magnetron sputtering, PAA was prepared on the Zr film through dip-coating and then thermally imidized to form the PI film. The transmission spectrum obtained by using synchrotron radiation fits with calculation result fairly well. Although the combination of the PI film with Zr film results in the decline of the transmission, the mechanical strength of the composite film is improved, and the transmittances of the Zr(300nm)/PI(200nm) and Zr(400nm)/PI(200nm) films reach 14.9% and 7.5% respectively at 13.9 nm, still satisfying the actual requirement.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115246576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fengjuan Zhang, Qinkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Jian Huang, K. Tang, Jijun Zhang, Linjun Wang
In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.
{"title":"Preparation and characterization of (110) diamond films used for field-effect transistors","authors":"Fengjuan Zhang, Qinkai Zeng, Xiaoyu Pan, Mei Bi, Xingmao Yan, Jian Huang, K. Tang, Jijun Zhang, Linjun Wang","doi":"10.1117/12.888210","DOIUrl":"https://doi.org/10.1117/12.888210","url":null,"abstract":"In this work, H-terminated (110) diamond film, a novel active material for high-frequency and high-power field-effect transistors (FETs), was successfully prepared by hot filament chemical vapor deposition (HFCVD) method using acetone as carbon source. X-ray diffraction (XRD) measurements showed that at a lower pressure of 2 KPa and a C/H ratio of 40/200, a higher intensity of (110) diffraction peak with a narrower full width at half maximum (FWHM) was detected which meant highly (110) preferential orientation of diamond films. H-terminated films were achieved by the hydrogen gas pressure of 5KPa and a microwave power of 2.4KW. The H-terminated (110) diamond films obtained were suitable for FETs. Hall Effect measurement indicated that the sheet carrier density of (110)-oriented films was 2.2x1013cm-2, and 2.3 times higher than that of the randomly-oriented films.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128344348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Natural dye-sensitized solar cells (N-DSSCs) were assembled using chlorophyll sensitized mesoporous ZnO (based on FTO) as the photoanode and platinum plate as the cathode. The natural dyes (chlorophyll) were extracted from spinach by simple procedure. The absorption spectrum and fluorescence spectrum of chlorophyll were studied. Mesoporous ZnO (m-ZnO) applied to the N-DSSCs was synthesized through hydrothermal method. The structures and morphologies were characterized by X-ray Diffraction (XRD) and diffuse reflection. The results indicated that the samples had an average pore size of 17 nm and the m-ZnO was hexagonal wurtzite structure. The performances of the N-DSSCs were investigated under AM 1.5G illumination. The Voc of the N-DSSCs was about 480mv, and the Isc was about 470μA. The performance of the N-DSSCs could be further improved by adjusting its structure.
{"title":"Natural dye -sensitized mesoporous ZnO solar cell","authors":"Qishuang Wu, Guizhi Wu, M. Cao","doi":"10.1117/12.888318","DOIUrl":"https://doi.org/10.1117/12.888318","url":null,"abstract":"Natural dye-sensitized solar cells (N-DSSCs) were assembled using chlorophyll sensitized mesoporous ZnO (based on FTO) as the photoanode and platinum plate as the cathode. The natural dyes (chlorophyll) were extracted from spinach by simple procedure. The absorption spectrum and fluorescence spectrum of chlorophyll were studied. Mesoporous ZnO (m-ZnO) applied to the N-DSSCs was synthesized through hydrothermal method. The structures and morphologies were characterized by X-ray Diffraction (XRD) and diffuse reflection. The results indicated that the samples had an average pore size of 17 nm and the m-ZnO was hexagonal wurtzite structure. The performances of the N-DSSCs were investigated under AM 1.5G illumination. The Voc of the N-DSSCs was about 480mv, and the Isc was about 470μA. The performance of the N-DSSCs could be further improved by adjusting its structure.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124501710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tian Sang, Tuo Cai, Xiaowei Zhang, Sanhong Ding, Shaohong Cai, Zhanshan Wang
Wideband reflector and bandpass filter are obtained by using a Ge subwavelength periodic membrane with the thickness kept constant at 3.20 μm. The strong refractive-index modulation of the Ge subwavelength periodic membrane yields increased bandwidth of the leaky mode resonances, thus the excitation of the leaky mode resonances TE1,1, TE2,1, and TE3,0 may interact to form a broad reflection band or a transmission passband near λ=10.60 μm.
{"title":"Wideband reflector and bandpass filter by using a Ge subwavelength periodic membrane","authors":"Tian Sang, Tuo Cai, Xiaowei Zhang, Sanhong Ding, Shaohong Cai, Zhanshan Wang","doi":"10.1117/12.888278","DOIUrl":"https://doi.org/10.1117/12.888278","url":null,"abstract":"Wideband reflector and bandpass filter are obtained by using a Ge subwavelength periodic membrane with the thickness kept constant at 3.20 μm. The strong refractive-index modulation of the Ge subwavelength periodic membrane yields increased bandwidth of the leaky mode resonances, thus the excitation of the leaky mode resonances TE1,1, TE2,1, and TE3,0 may interact to form a broad reflection band or a transmission passband near λ=10.60 μm.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121153197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zihuan Xia, Yonggang Wu, Leijie Ling, G. Lv, Heyun Wu
In this paper the displacement of the reflection resonant peak resulting from the change of the gap between the guided-mode resonance (GMR) grating and substrate is used to measure the nanometer gap. The paper calculates double layer model and metal substrate model using rigorous coupled-wave analysis (RCWA). It is revealed that nano-gap detection using GMR grating is feasible for both dielectric and metal substrate. The detection range of resonant wavelength and gap is tunable. The detect sensitivity is investigated by varying the parameters of grating (thickness, period and refractive index), the thickness of films, and polarization. Tolerance of grating implies an advantage for manufacture. An optimized result presents an 18nm resonant shift for 100nm gap with the max sensitivity achieving 0.85.
{"title":"Nanometer gap detection method using GMR grating","authors":"Zihuan Xia, Yonggang Wu, Leijie Ling, G. Lv, Heyun Wu","doi":"10.1117/12.887554","DOIUrl":"https://doi.org/10.1117/12.887554","url":null,"abstract":"In this paper the displacement of the reflection resonant peak resulting from the change of the gap between the guided-mode resonance (GMR) grating and substrate is used to measure the nanometer gap. The paper calculates double layer model and metal substrate model using rigorous coupled-wave analysis (RCWA). It is revealed that nano-gap detection using GMR grating is feasible for both dielectric and metal substrate. The detection range of resonant wavelength and gap is tunable. The detect sensitivity is investigated by varying the parameters of grating (thickness, period and refractive index), the thickness of films, and polarization. Tolerance of grating implies an advantage for manufacture. An optimized result presents an 18nm resonant shift for 100nm gap with the max sensitivity achieving 0.85.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122321494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a planarization procedure using polymer films to achieve a flat CMOS surface of Readout Integrated Circuit (ROIC) for the integration between uncooled infrared focal plane arrays and ROIC. At the same time, the polymer film is also used as the sacrificial layers. After amorphous Silicon (a-Si) film was deposited using plasma enhanced chemical vapor deposition (PECVD), and patterned using inductively coupled plasma (ICP), the polymer sacrificial layer should be removed to form a-Si self-supporting micro-bridge structure. So the thickness of polymer film determine the height of the micro-bridge; the soft curing temperature determines if the contact hole can be etched by developer during the first photolithography; and the rate of dry etching determines whether the sacrificial layers of the structure can be released successfully. In this paper, the curing temperature, surface roughness, etching process of polymer films are systematically researched. On this basis, polymer film as planarization successfully reduces the 2μm height of the bumps on ROIC to less than 83 nm, over the planarized polymer mesas, bolometer arrays are fabricated. Then the polymer film as sacrificial are removed by ICP and 160x120 self-supporting micro-bridge structure arrays are successfully fabricated.
{"title":"Polymer films as planarization and sacrificial layers for uncooled infrared focal plane arrays","authors":"Huan Liu, Weiguo Liu, Chang-long Cai, Shun Zhou","doi":"10.1117/12.888597","DOIUrl":"https://doi.org/10.1117/12.888597","url":null,"abstract":"This paper presents a planarization procedure using polymer films to achieve a flat CMOS surface of Readout Integrated Circuit (ROIC) for the integration between uncooled infrared focal plane arrays and ROIC. At the same time, the polymer film is also used as the sacrificial layers. After amorphous Silicon (a-Si) film was deposited using plasma enhanced chemical vapor deposition (PECVD), and patterned using inductively coupled plasma (ICP), the polymer sacrificial layer should be removed to form a-Si self-supporting micro-bridge structure. So the thickness of polymer film determine the height of the micro-bridge; the soft curing temperature determines if the contact hole can be etched by developer during the first photolithography; and the rate of dry etching determines whether the sacrificial layers of the structure can be released successfully. In this paper, the curing temperature, surface roughness, etching process of polymer films are systematically researched. On this basis, polymer film as planarization successfully reduces the 2μm height of the bumps on ROIC to less than 83 nm, over the planarized polymer mesas, bolometer arrays are fabricated. Then the polymer film as sacrificial are removed by ICP and 160x120 self-supporting micro-bridge structure arrays are successfully fabricated.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131077354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.
{"title":"Study of high temperature piezoelectric scandium aluminum nitride thin films","authors":"Xiaolei Shi, Yigang Chen, W. Shi, Linjun Wang","doi":"10.1117/12.888228","DOIUrl":"https://doi.org/10.1117/12.888228","url":null,"abstract":"AlN has weak piezoelectric property (piezoelectric coefficient d33=5.5pCN-1) and a high Curie temperature (>1150°C). By Sc-doping in AlN thin films, it is possible to synthesize ScxAl1-xN alloy with high piezoelectric coefficient and high temperature stability. In this study, c-axis oriented AlN thin films have been successfully grown on Si (100) substrates by DC magnetron reactive sputtering method. First-principles calculations are also performed to investigate the structure of ScxAl1-xN.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121261762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Qi, Jianpeng Wang, A. Erdmann, Yunxia Jin, J. Shao, Z. Fan
This paper presents the design and fabrication of several versions of structured thin films (STF). One kind of STF is a sculptured thin film, generally deposited with a glancing angle deposition technique. Several optical components were designed and fabricated using this technique. This includes a TiO2 based wave-plate for an operating wavelength of 550 nm, a multilayer based beam splitter with a transmittance of 75.0% for TM light and 38.6% for TE light at 632 nm, and a multilayer based polarization neutral transmission filter for an incidence angle of 45°. Multilayer dielectric gratings (MDG) present another type of STF. To obtain a broad diffraction bandwidth, a novel MDG structure with three materials is proposed. Using multi-parameter optimization, a broadband spectrum with an efficiency >97.5% and a bandwidth >100 nm centered at 800 nm was obtained. For the first time, a new type of two-dimensional (2D) MDG is proposed to obtain higher efficiency (>98%) and broader bandwidth (>110 nm). Finally, the designs of pulse compression gratings and of broadband polarizers, which can be fabricated with a single material, are presented.
{"title":"Innovations in structured thin film design and fabrication for optical applications","authors":"H. Qi, Jianpeng Wang, A. Erdmann, Yunxia Jin, J. Shao, Z. Fan","doi":"10.1117/12.888231","DOIUrl":"https://doi.org/10.1117/12.888231","url":null,"abstract":"This paper presents the design and fabrication of several versions of structured thin films (STF). One kind of STF is a sculptured thin film, generally deposited with a glancing angle deposition technique. Several optical components were designed and fabricated using this technique. This includes a TiO2 based wave-plate for an operating wavelength of 550 nm, a multilayer based beam splitter with a transmittance of 75.0% for TM light and 38.6% for TE light at 632 nm, and a multilayer based polarization neutral transmission filter for an incidence angle of 45°. Multilayer dielectric gratings (MDG) present another type of STF. To obtain a broad diffraction bandwidth, a novel MDG structure with three materials is proposed. Using multi-parameter optimization, a broadband spectrum with an efficiency >97.5% and a bandwidth >100 nm centered at 800 nm was obtained. For the first time, a new type of two-dimensional (2D) MDG is proposed to obtain higher efficiency (>98%) and broader bandwidth (>110 nm). Finally, the designs of pulse compression gratings and of broadband polarizers, which can be fabricated with a single material, are presented.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115923985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Tang, Jian Huang, Qinkai Zeng, Jijun Zhang, Wei-min Shi, Yiben Xia, Linjun Wang
ZnMgO films were prepared at room temperature on freestanding diamond (FSD) substrates by co-sputtering with different sputtering power of MgO target. The effect of sputtering power of MgO target on the property of ZnMgO films was investigated. The PL spetra of ZnMgO films revealed that the bandgap of ZnMgO was approximately linear related to the sputtering power of MgO target. The ZnMgO film was also applied to be fabricating UV detectors. Finally, we studied the photoelectric property of the UV detector.
{"title":"Growth and UV detectors application of ZnMgO films","authors":"K. Tang, Jian Huang, Qinkai Zeng, Jijun Zhang, Wei-min Shi, Yiben Xia, Linjun Wang","doi":"10.1117/12.888372","DOIUrl":"https://doi.org/10.1117/12.888372","url":null,"abstract":"ZnMgO films were prepared at room temperature on freestanding diamond (FSD) substrates by co-sputtering with different sputtering power of MgO target. The effect of sputtering power of MgO target on the property of ZnMgO films was investigated. The PL spetra of ZnMgO films revealed that the bandgap of ZnMgO was approximately linear related to the sputtering power of MgO target. The ZnMgO film was also applied to be fabricating UV detectors. Finally, we studied the photoelectric property of the UV detector.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122612178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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