Anatase Ti1-xFexO2 (x=0, 1%, 2%) nanocrystalline films were prepared on quartz substrates by a facile nonhydrolytic sol-gel route. The structure and optical properties have been studied by X-ray diffraction (XRD), Raman scattering, transmittance spectra and temperature dependent photoluminescence (PL). The B1g, Eg and (A1g+B1g) modes of anatase phase TiO2 can be observed in Raman spectra. Dielectric functions have been extracted by fitting the transmittance spectra in the photon energy range of 0.5-6.5 eV with Adachi's model. The pure TiO2 film displays a strong broadening visible luminescence band; however, Fe-doped samples exhibit a very weak luminescence due to the increase of oxygen vacancy concentration in TiO2. With the temperature increases, the PL intensity decreases monotonously and there are five emission peaks for the pure sample in low temperatures, which could be attributed to oxygen vacancies, surface states and F+ center.
{"title":"Temperature dependence of photoluminescence, Raman scattering, and transmittance spectra of anatase Ti1-xFexO2 nanocrystalline films","authors":"X. G. Chen, W. Li, Y. W. Li, J. Chu","doi":"10.1117/12.888287","DOIUrl":"https://doi.org/10.1117/12.888287","url":null,"abstract":"Anatase Ti1-xFexO2 (x=0, 1%, 2%) nanocrystalline films were prepared on quartz substrates by a facile nonhydrolytic sol-gel route. The structure and optical properties have been studied by X-ray diffraction (XRD), Raman scattering, transmittance spectra and temperature dependent photoluminescence (PL). The B1g, Eg and (A1g+B1g) modes of anatase phase TiO2 can be observed in Raman spectra. Dielectric functions have been extracted by fitting the transmittance spectra in the photon energy range of 0.5-6.5 eV with Adachi's model. The pure TiO2 film displays a strong broadening visible luminescence band; however, Fe-doped samples exhibit a very weak luminescence due to the increase of oxygen vacancy concentration in TiO2. With the temperature increases, the PL intensity decreases monotonously and there are five emission peaks for the pure sample in low temperatures, which could be attributed to oxygen vacancies, surface states and F+ center.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114745307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka
We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.
{"title":"Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)","authors":"Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka","doi":"10.1117/12.888531","DOIUrl":"https://doi.org/10.1117/12.888531","url":null,"abstract":"We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114781106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CTAB-templated large pore silica nano-composite films were prepared by means of a two-step acid-catalyzed and solgel process using tetraethoxysilane (TEOS) as the precursor, Surfactant cetyltrimethy- ammonium bromide (CTAB) as an organic template to generate the uniformity pore structure and 1,3,5-trimethyl benzene (TMB) as organic swelling agent. The obtained samples were characterized by XRD, Fourier-transform infrared (FTIR) and Atomic Force Microscopy (AFM). We found that the TMB/CTAB mol ratio must be controlled well for producing large pore materials.
{"title":"Preparation and characterizaion of CTAB-templated large pore silica nanocomposite films","authors":"Lanfang Yao, Linlin Tian, Shuo Wang, Lin Li, Ruiqing Xu, X. Fang","doi":"10.1117/12.888306","DOIUrl":"https://doi.org/10.1117/12.888306","url":null,"abstract":"CTAB-templated large pore silica nano-composite films were prepared by means of a two-step acid-catalyzed and solgel process using tetraethoxysilane (TEOS) as the precursor, Surfactant cetyltrimethy- ammonium bromide (CTAB) as an organic template to generate the uniformity pore structure and 1,3,5-trimethyl benzene (TMB) as organic swelling agent. The obtained samples were characterized by XRD, Fourier-transform infrared (FTIR) and Atomic Force Microscopy (AFM). We found that the TMB/CTAB mol ratio must be controlled well for producing large pore materials.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130286338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The field of single and multilayer based optics has seen significant improvements and new applications in recent years. In this paper, we give an overview of the numerous types of single and multilayer optics that have been developed. The fabrication possibilities of well-known regular periodic multilayers have been driven close to the theoretical limit, providing high resolution or high flux optics for a wide range of photon energies. In addition to that, multilayers with a lateral gradient have been developed to be adapted to curved substrates (for example for focusing purposes) or varying incidence angles on long, flat substrates. Depth-graded multilayers with arbitrarily selectable layer thicknesses over the entire layer stack have been simulated and manufactured, mainly as broadband mirrors with immense bandwidths. Finally, new applications of high precision deposition are reference sample for XRF (having several elements in low concentrations of few ng/mm2) and TXRF (with mass deposition in the range of 1011 atoms/cm2) pay tribute to the low detection limits achievable in modern instruments for these techniques.
{"title":"High precision deposition of single and multilayer x-ray optics and their application in x-ray analysis","authors":"R. Dietsch, T. Holz, M. Krämer, D. Weissbach","doi":"10.1117/12.888192","DOIUrl":"https://doi.org/10.1117/12.888192","url":null,"abstract":"The field of single and multilayer based optics has seen significant improvements and new applications in recent years. In this paper, we give an overview of the numerous types of single and multilayer optics that have been developed. The fabrication possibilities of well-known regular periodic multilayers have been driven close to the theoretical limit, providing high resolution or high flux optics for a wide range of photon energies. In addition to that, multilayers with a lateral gradient have been developed to be adapted to curved substrates (for example for focusing purposes) or varying incidence angles on long, flat substrates. Depth-graded multilayers with arbitrarily selectable layer thicknesses over the entire layer stack have been simulated and manufactured, mainly as broadband mirrors with immense bandwidths. Finally, new applications of high precision deposition are reference sample for XRF (having several elements in low concentrations of few ng/mm2) and TXRF (with mass deposition in the range of 1011 atoms/cm2) pay tribute to the low detection limits achievable in modern instruments for these techniques.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131036377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia
In this paper lightweight and flexible CdS/CdTe thin film solar cells on metallic substrates have been developed using a close spaced sublimation process with a low deposition temperature. The analysis of basic properties of CdS and CdTe thin films was carried out by SEM and XRD characterization techniques. The thin film solar cell devices were characterized by current- voltage and photocurrent techniques. Open circuit voltage (Voc) of 710 mV, short-circuit current density (Jsc) of 20.55 mA/cm2 and conversion efficiency of 9.04% was obtained for the flexible CdTe/CdS thin film solar cell under AM1.5 illumination.
{"title":"CdTe thin film solar cell on flexible metallic substrate","authors":"Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia","doi":"10.1117/12.888236","DOIUrl":"https://doi.org/10.1117/12.888236","url":null,"abstract":"In this paper lightweight and flexible CdS/CdTe thin film solar cells on metallic substrates have been developed using a close spaced sublimation process with a low deposition temperature. The analysis of basic properties of CdS and CdTe thin films was carried out by SEM and XRD characterization techniques. The thin film solar cell devices were characterized by current- voltage and photocurrent techniques. Open circuit voltage (Voc) of 710 mV, short-circuit current density (Jsc) of 20.55 mA/cm2 and conversion efficiency of 9.04% was obtained for the flexible CdTe/CdS thin film solar cell under AM1.5 illumination.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126012622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fangfang Wang, Jingtao Zhu, M. Tan, Li Jiang, Fengli Wang, B. Mu, Zhanshan Wang
We are developing a hard X-ray telescope utilizing multilayer supermirrors. This telescope is conical approximation of the Wolter-I configuration with tightly nested shells. Because of the fact that different nested shell corresponds to different grazing incident angle, so the optimum multilayer design depends on the grazing angle, and one would therefore, ideally design a different coating for each of the nested mirror shells. However, as a matter of practicality, we have to reduce the number of different designs for a reasonable compromise between the complexity of the calculation and optimal performance. In this paper, we investigate the effect of different angular classification on the effective area of the hard X-ray telescope. Many groups of hard X-ray supermirrors are optimized with different grazing incident angles using a numerical and analysis method. These supermirrors are divided into different number of groups, e.g. two, four, six, eight, ten, twelve, fourteen, and sixteen, respectively, and the corresponding effective areas are calculated. Results show that six groups of X-ray supermirrors are suitable for a reasonable compromise between optimal performance and the complexity of the calculation and fabrication.
{"title":"Effect of different supermirrors on the performance of a hard x-ray telescope","authors":"Fangfang Wang, Jingtao Zhu, M. Tan, Li Jiang, Fengli Wang, B. Mu, Zhanshan Wang","doi":"10.1117/12.887369","DOIUrl":"https://doi.org/10.1117/12.887369","url":null,"abstract":"We are developing a hard X-ray telescope utilizing multilayer supermirrors. This telescope is conical approximation of the Wolter-I configuration with tightly nested shells. Because of the fact that different nested shell corresponds to different grazing incident angle, so the optimum multilayer design depends on the grazing angle, and one would therefore, ideally design a different coating for each of the nested mirror shells. However, as a matter of practicality, we have to reduce the number of different designs for a reasonable compromise between the complexity of the calculation and optimal performance. In this paper, we investigate the effect of different angular classification on the effective area of the hard X-ray telescope. Many groups of hard X-ray supermirrors are optimized with different grazing incident angles using a numerical and analysis method. These supermirrors are divided into different number of groups, e.g. two, four, six, eight, ten, twelve, fourteen, and sixteen, respectively, and the corresponding effective areas are calculated. Results show that six groups of X-ray supermirrors are suitable for a reasonable compromise between optimal performance and the complexity of the calculation and fabrication.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124063191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.
{"title":"Contact resistance in organic transistors with different structures","authors":"Jiaxing Hu, L. Niu, Rong-hui Guo, B. Liu","doi":"10.1117/12.888227","DOIUrl":"https://doi.org/10.1117/12.888227","url":null,"abstract":"It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134569329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Zhang, M. Gu, Dalin Yao, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni
CsI:Tl scintillation films were prepared on the net-like patterning substrates. The pattern of the substrates as well as the morphology of the CsI:Tl films were measured by SEM. The results show that the size of each grid on substrate is 55μm which is formed by SU-8 photoresist with 5μm in both height and width, and the CsI:Tl films display quite a good columnar structure. The spatial resolutions of X-ray imaging were taken by MTF measurement. The spatial frequency of the CsI:Tl films on patterned substrates can reach up to 10 lp/mm at the 10% level of MTF, which is twice higher than that of the CsI:Tl film on the substrate without patterning.
{"title":"A high spatial resolution CsI:Tl scintillation film based on net-like substrate","authors":"Wei Zhang, M. Gu, Dalin Yao, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni","doi":"10.1117/12.888355","DOIUrl":"https://doi.org/10.1117/12.888355","url":null,"abstract":"CsI:Tl scintillation films were prepared on the net-like patterning substrates. The pattern of the substrates as well as the morphology of the CsI:Tl films were measured by SEM. The results show that the size of each grid on substrate is 55μm which is formed by SU-8 photoresist with 5μm in both height and width, and the CsI:Tl films display quite a good columnar structure. The spatial resolutions of X-ray imaging were taken by MTF measurement. The spatial frequency of the CsI:Tl films on patterned substrates can reach up to 10 lp/mm at the 10% level of MTF, which is twice higher than that of the CsI:Tl film on the substrate without patterning.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131663985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fengli Wang, Lei Liu, Jingtao Zhu, Zhong Zhang, Lingyan Chen
Chirped Mo/Si multilayer mirrors used in 13-17nm region have been designed using analytical approach based on the combination of genetic algorithm and simplex algorithm. The Cauchy equation and the polynomial expression were used to fit the real part and the imaginary part of the optical constants of Mo and Si in the wavelength region of 12.8-17.2nm, respectively. The reflectivity, reflective phase, group delay and group delay dispersion of the multilayer were calculated based on the Fresnel iterative equations. The initial structure of the multilayer was obtained by using the genetic algorithm, and the final structure of the mirror was optimized by using the simplex algorithm. We got the different multilayer mirrors for the target GDD of -2800 as2, -3600 as2, and -6500 as2. For these three multilayer mirrors, the average reflectivities in the wavelength range of 13-17 nm are 7.00± 0.08 %, 5.99 ±0.05 %, and 6.00±0.05 %, respectively. And the average GDD in the same wavelength range are -2793.22±104.00 as2,-3597.44±79.06 as2, and - 6498.13±59.96 as2. In addition, the effects of the interface roughness on the reflectivity and the phase were discussed. It is found that the reflectivity is sensitive to the interface roughness, but the phase is insensitive.
{"title":"Design of the chirped multilayer mirrors in extreme ultraviolet region for ultrafast applications","authors":"Fengli Wang, Lei Liu, Jingtao Zhu, Zhong Zhang, Lingyan Chen","doi":"10.1117/12.888421","DOIUrl":"https://doi.org/10.1117/12.888421","url":null,"abstract":"Chirped Mo/Si multilayer mirrors used in 13-17nm region have been designed using analytical approach based on the combination of genetic algorithm and simplex algorithm. The Cauchy equation and the polynomial expression were used to fit the real part and the imaginary part of the optical constants of Mo and Si in the wavelength region of 12.8-17.2nm, respectively. The reflectivity, reflective phase, group delay and group delay dispersion of the multilayer were calculated based on the Fresnel iterative equations. The initial structure of the multilayer was obtained by using the genetic algorithm, and the final structure of the mirror was optimized by using the simplex algorithm. We got the different multilayer mirrors for the target GDD of -2800 as2, -3600 as2, and -6500 as2. For these three multilayer mirrors, the average reflectivities in the wavelength range of 13-17 nm are 7.00± 0.08 %, 5.99 ±0.05 %, and 6.00±0.05 %, respectively. And the average GDD in the same wavelength range are -2793.22±104.00 as2,-3597.44±79.06 as2, and - 6498.13±59.96 as2. In addition, the effects of the interface roughness on the reflectivity and the phase were discussed. It is found that the reflectivity is sensitive to the interface roughness, but the phase is insensitive.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123499144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jian Huang, Linjun Wang, K. Tang, Jijun Zhang, Wei-min Shi, Yiben Xia, Xionggang Lu
ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.
{"title":"The annealing effects on the ZnO/diamond film heterojunction diode","authors":"Jian Huang, Linjun Wang, K. Tang, Jijun Zhang, Wei-min Shi, Yiben Xia, Xionggang Lu","doi":"10.1117/12.888200","DOIUrl":"https://doi.org/10.1117/12.888200","url":null,"abstract":"ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124460685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：