In the heterojunction system, SnS was used as the absorption layer of solar cells. In this work, Cd-free ZnS material was selected as the window layer. SnS and ZnS were prepared by vacuum evaporation. Annealing plays a considerable role in the process which will affect the crystal structure and composition of the film. In this experiment, the films were annealed at temperature 300°C, 400°C and 500°C in N2 atmosphere. In XRD diagram, two strong diffraction peaks at 29.2° and 32.2° were observed, corresponding to β-ZnS (111) and SnS (111), respectively. SEM images show that average grain size of the film is about 50 nm. Noticeable increase of grain size and clear boundaries between grains were found after annealing. The electrical properties of the SnS thin films were changed through varying annealing processes. All the results indicate that ZnS/SnS structure is a good choice of SnS solar cells.
{"title":"Influence of heat treatment on the microstruture of SnS/ZnS film prepared by vacuum evaporation","authors":"Wenjun Wu, Wei-min Shi, Zhe Hu, Sheng Liu, Weiguang Yang, Guang-pu Wei","doi":"10.1117/12.888226","DOIUrl":"https://doi.org/10.1117/12.888226","url":null,"abstract":"In the heterojunction system, SnS was used as the absorption layer of solar cells. In this work, Cd-free ZnS material was selected as the window layer. SnS and ZnS were prepared by vacuum evaporation. Annealing plays a considerable role in the process which will affect the crystal structure and composition of the film. In this experiment, the films were annealed at temperature 300°C, 400°C and 500°C in N2 atmosphere. In XRD diagram, two strong diffraction peaks at 29.2° and 32.2° were observed, corresponding to β-ZnS (111) and SnS (111), respectively. SEM images show that average grain size of the film is about 50 nm. Noticeable increase of grain size and clear boundaries between grains were found after annealing. The electrical properties of the SnS thin films were changed through varying annealing processes. All the results indicate that ZnS/SnS structure is a good choice of SnS solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126952701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The field of single and multilayer based optics has seen significant improvements and new applications in recent years. In this paper, we give an overview of the numerous types of single and multilayer optics that have been developed. The fabrication possibilities of well-known regular periodic multilayers have been driven close to the theoretical limit, providing high resolution or high flux optics for a wide range of photon energies. In addition to that, multilayers with a lateral gradient have been developed to be adapted to curved substrates (for example for focusing purposes) or varying incidence angles on long, flat substrates. Depth-graded multilayers with arbitrarily selectable layer thicknesses over the entire layer stack have been simulated and manufactured, mainly as broadband mirrors with immense bandwidths. Finally, new applications of high precision deposition are reference sample for XRF (having several elements in low concentrations of few ng/mm2) and TXRF (with mass deposition in the range of 1011 atoms/cm2) pay tribute to the low detection limits achievable in modern instruments for these techniques.
{"title":"High precision deposition of single and multilayer x-ray optics and their application in x-ray analysis","authors":"R. Dietsch, T. Holz, M. Krämer, D. Weissbach","doi":"10.1117/12.888192","DOIUrl":"https://doi.org/10.1117/12.888192","url":null,"abstract":"The field of single and multilayer based optics has seen significant improvements and new applications in recent years. In this paper, we give an overview of the numerous types of single and multilayer optics that have been developed. The fabrication possibilities of well-known regular periodic multilayers have been driven close to the theoretical limit, providing high resolution or high flux optics for a wide range of photon energies. In addition to that, multilayers with a lateral gradient have been developed to be adapted to curved substrates (for example for focusing purposes) or varying incidence angles on long, flat substrates. Depth-graded multilayers with arbitrarily selectable layer thicknesses over the entire layer stack have been simulated and manufactured, mainly as broadband mirrors with immense bandwidths. Finally, new applications of high precision deposition are reference sample for XRF (having several elements in low concentrations of few ng/mm2) and TXRF (with mass deposition in the range of 1011 atoms/cm2) pay tribute to the low detection limits achievable in modern instruments for these techniques.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131036377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Zhang, M. Gu, Dalin Yao, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni
CsI:Tl scintillation films were prepared on the net-like patterning substrates. The pattern of the substrates as well as the morphology of the CsI:Tl films were measured by SEM. The results show that the size of each grid on substrate is 55μm which is formed by SU-8 photoresist with 5μm in both height and width, and the CsI:Tl films display quite a good columnar structure. The spatial resolutions of X-ray imaging were taken by MTF measurement. The spatial frequency of the CsI:Tl films on patterned substrates can reach up to 10 lp/mm at the 10% level of MTF, which is twice higher than that of the CsI:Tl film on the substrate without patterning.
{"title":"A high spatial resolution CsI:Tl scintillation film based on net-like substrate","authors":"Wei Zhang, M. Gu, Dalin Yao, Xiaolin Liu, Shi-ming Huang, Bo Liu, Chen Ni","doi":"10.1117/12.888355","DOIUrl":"https://doi.org/10.1117/12.888355","url":null,"abstract":"CsI:Tl scintillation films were prepared on the net-like patterning substrates. The pattern of the substrates as well as the morphology of the CsI:Tl films were measured by SEM. The results show that the size of each grid on substrate is 55μm which is formed by SU-8 photoresist with 5μm in both height and width, and the CsI:Tl films display quite a good columnar structure. The spatial resolutions of X-ray imaging were taken by MTF measurement. The spatial frequency of the CsI:Tl films on patterned substrates can reach up to 10 lp/mm at the 10% level of MTF, which is twice higher than that of the CsI:Tl film on the substrate without patterning.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131663985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
CTAB-templated large pore silica nano-composite films were prepared by means of a two-step acid-catalyzed and solgel process using tetraethoxysilane (TEOS) as the precursor, Surfactant cetyltrimethy- ammonium bromide (CTAB) as an organic template to generate the uniformity pore structure and 1,3,5-trimethyl benzene (TMB) as organic swelling agent. The obtained samples were characterized by XRD, Fourier-transform infrared (FTIR) and Atomic Force Microscopy (AFM). We found that the TMB/CTAB mol ratio must be controlled well for producing large pore materials.
{"title":"Preparation and characterizaion of CTAB-templated large pore silica nanocomposite films","authors":"Lanfang Yao, Linlin Tian, Shuo Wang, Lin Li, Ruiqing Xu, X. Fang","doi":"10.1117/12.888306","DOIUrl":"https://doi.org/10.1117/12.888306","url":null,"abstract":"CTAB-templated large pore silica nano-composite films were prepared by means of a two-step acid-catalyzed and solgel process using tetraethoxysilane (TEOS) as the precursor, Surfactant cetyltrimethy- ammonium bromide (CTAB) as an organic template to generate the uniformity pore structure and 1,3,5-trimethyl benzene (TMB) as organic swelling agent. The obtained samples were characterized by XRD, Fourier-transform infrared (FTIR) and Atomic Force Microscopy (AFM). We found that the TMB/CTAB mol ratio must be controlled well for producing large pore materials.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130286338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia
In this paper lightweight and flexible CdS/CdTe thin film solar cells on metallic substrates have been developed using a close spaced sublimation process with a low deposition temperature. The analysis of basic properties of CdS and CdTe thin films was carried out by SEM and XRD characterization techniques. The thin film solar cell devices were characterized by current- voltage and photocurrent techniques. Open circuit voltage (Voc) of 710 mV, short-circuit current density (Jsc) of 20.55 mA/cm2 and conversion efficiency of 9.04% was obtained for the flexible CdTe/CdS thin film solar cell under AM1.5 illumination.
{"title":"CdTe thin film solar cell on flexible metallic substrate","authors":"Q. Su, Dongming Li, W. Shi, Linjun Wang, Yiben Xia","doi":"10.1117/12.888236","DOIUrl":"https://doi.org/10.1117/12.888236","url":null,"abstract":"In this paper lightweight and flexible CdS/CdTe thin film solar cells on metallic substrates have been developed using a close spaced sublimation process with a low deposition temperature. The analysis of basic properties of CdS and CdTe thin films was carried out by SEM and XRD characterization techniques. The thin film solar cell devices were characterized by current- voltage and photocurrent techniques. Open circuit voltage (Voc) of 710 mV, short-circuit current density (Jsc) of 20.55 mA/cm2 and conversion efficiency of 9.04% was obtained for the flexible CdTe/CdS thin film solar cell under AM1.5 illumination.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126012622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang
The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.
{"title":"Optimization of triangle grating structures for light trapping in thin film silicon solar cells","authors":"Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang","doi":"10.1117/12.887556","DOIUrl":"https://doi.org/10.1117/12.887556","url":null,"abstract":"The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115351635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka
We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.
{"title":"Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)","authors":"Y. Ikoma, H. Yahaya, H. Sakita, Yuta Nishino, T. Motooka","doi":"10.1117/12.888531","DOIUrl":"https://doi.org/10.1117/12.888531","url":null,"abstract":"We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114781106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.
{"title":"Contact resistance in organic transistors with different structures","authors":"Jiaxing Hu, L. Niu, Rong-hui Guo, B. Liu","doi":"10.1117/12.888227","DOIUrl":"https://doi.org/10.1117/12.888227","url":null,"abstract":"It is an important way to improve carrier mobility by reducing the contact resistance in organic transistors. In this paper, two kinds of transistors were fabricated with copper phthalocyanine semiconductor. Then by experimental methods, we tested the devices with different structure and different channel length, and analyzed the effect of structure on contact resistance as well as output characteristic. The results demonstrate that gate voltage can effectively reduce the contact resistance in the top contact device.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134569329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jian Huang, Linjun Wang, K. Tang, Jijun Zhang, Wei-min Shi, Yiben Xia, Xionggang Lu
ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.
{"title":"The annealing effects on the ZnO/diamond film heterojunction diode","authors":"Jian Huang, Linjun Wang, K. Tang, Jijun Zhang, Wei-min Shi, Yiben Xia, Xionggang Lu","doi":"10.1117/12.888200","DOIUrl":"https://doi.org/10.1117/12.888200","url":null,"abstract":"ZnO/diamond film heterojunction diodes were fabricated by depositing n-type ZnO films on p-type freestanding diamond (FSD) films using radio-frequency (RF) magnetron sputtering method. The effects of the annealing process on the properties of ZnO films were studied. The influence of the annealing process on the current-voltage (I-V) characteristics of the electrodes on ZnO and diamond films and the property of heterojunction diode was also examined. The results showed that the annealing treatment was helpful to improve the crystalline quality of the films and the performance of the diode.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124460685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.
{"title":"Optical spectroscopy of organic semiconductor monolayers","authors":"R. He, N. G. Tassi, G. Blanchet, A. Pinczuk","doi":"10.1117/12.888197","DOIUrl":"https://doi.org/10.1117/12.888197","url":null,"abstract":"Growing interest in organic molecular semiconductors is stimulated by their promising applications in flexible devices. Pentacene is a benchmark organic semiconductor material because of its potential applications in high mobility thin film transistors and optoelectronic devices. Highly uniform monolayers of pentacene grown on polymeric substrate of poly alpha-methylstyrene exhibit sharp and intense free exciton (FE) luminescence at low temperatures. The FE emission displays characteristic intensity that grows quadratically with the number of layers. Large enhancements of Raman scattering intensities at the FE resonance enable the first observations of low-lying lattice vibrational modes in films reaching the single monolayer level. The low-lying modes exhibit characteristic changes when going from a single monolayer to two layers, revealing that a phase akin to a thin film phase of pentacene already emerges in structures of only two monolayers. A simple analysis of mode splittings offers estimates of the strength of inter-layer interactions. The results demonstrate novel venues for ultra-thin film characterization and studies of interface effects in organic molecular semiconductor structures.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125372462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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