Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.
{"title":"Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method","authors":"Jianqiang Luo, Weiguo Liu, Shun Zhou, Xiaotao Sun","doi":"10.1117/12.888385","DOIUrl":"https://doi.org/10.1117/12.888385","url":null,"abstract":"Pyroelectric lead lanthanum zirconnate titanate (PbLa8Zr65Ti35) thin films were prepared by a metal-organic decomposition (MOD) method on Pt(111)/Ti/SiO2/Si(100) substrate. After annealing at different temperatures with the same annealing time, the amorphous films were transformed into polycrystalline PLZT films. The phase formation and surface microstructure were investigated by X-ray diffraction (XRD) and atom force microscopy (AFM). The XRD data showed the formation of pervoskite phase at 650°C and indicated suppression of pyrochlore phase as temperature increasing. The PLZT pyroelectric sensor was fabricated based on sensitive barrier layer instead of the other type barrier layer. Finally, dielectric and pyroelectric coefficients was also measured.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124871264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amorphous silicon oxide, silicon oxynitride and silicon nitride films were deposited in a PECVD reactor using silane (SiH4),ammonia (NH3) and nitrous oxide (N2O) as precursor gases. The N2O/NH3 flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by spectroscopic ellipsometry, XPS and FTIR spectroscopy. The compositions and infrared optical absorption properties of the three different types of films were investigated and compared. Special attention was paid to analyze the Si-O/Si-N bond stretching absorption including the absorption band intensity. It was found that the silicon oxynitride films show a dominant infrared stretching band due to the Si-O/Si-N bond , with the infrared absorption peak located between 860cm-1(11.6μm) for Si-N bond in silicon nitride and 1063cm-1(9.4μm) for Si-O bond in silicon oxide. The position of peak also shifts to a shorter wavelength when increasing the N2O/NH3 flow ratio. The infrared optical absorption properties of the silicon oxynitride films make them well suited for the absorber of uncooled microbolometer detectors
{"title":"Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films","authors":"Shun Zhou, Weiguo Liu, Chang-long Cai, Huan Liu","doi":"10.1117/12.888194","DOIUrl":"https://doi.org/10.1117/12.888194","url":null,"abstract":"Amorphous silicon oxide, silicon oxynitride and silicon nitride films were deposited in a PECVD reactor using silane (SiH4),ammonia (NH3) and nitrous oxide (N2O) as precursor gases. The N2O/NH3 flow ratio was varied in order to obtain different oxynitride compositions. The films were characterized by spectroscopic ellipsometry, XPS and FTIR spectroscopy. The compositions and infrared optical absorption properties of the three different types of films were investigated and compared. Special attention was paid to analyze the Si-O/Si-N bond stretching absorption including the absorption band intensity. It was found that the silicon oxynitride films show a dominant infrared stretching band due to the Si-O/Si-N bond , with the infrared absorption peak located between 860cm-1(11.6μm) for Si-N bond in silicon nitride and 1063cm-1(9.4μm) for Si-O bond in silicon oxide. The position of peak also shifts to a shorter wavelength when increasing the N2O/NH3 flow ratio. The infrared optical absorption properties of the silicon oxynitride films make them well suited for the absorber of uncooled microbolometer detectors","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125284141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zenghai Zhang, Guang-ming Wu, G. Gao, Jiandong Wu, W. Feng
Pure tungsten oxide thin films apparently show gasochromic performance, based on PdCl2 catalyst. In this paper, adulteration of MoO3 into WO3 sol has been achieved via sol-gel method. FT-IR, Differential Scanning Calorimeter (DSC-TG) and Uv-visible Spectroscopy have been used to analysis the compound sols, films and optical properties for the use of this material as smart windows. FT-IR shows that for the compound, new characteristic absorption bands arise, which is different from pure WO3 or MoO3. DSC-TG shows the phase change during the temperature ascending from 50 to 800°C. The compound thin films performs relatively well in coloring response time, colored extent, coloring-bleaching recycling and gasochromic effect with non-unicity color.
{"title":"Influence of MoO3 addition on the gasochromism of WO3 thin films","authors":"Zenghai Zhang, Guang-ming Wu, G. Gao, Jiandong Wu, W. Feng","doi":"10.1117/12.888320","DOIUrl":"https://doi.org/10.1117/12.888320","url":null,"abstract":"Pure tungsten oxide thin films apparently show gasochromic performance, based on PdCl2 catalyst. In this paper, adulteration of MoO3 into WO3 sol has been achieved via sol-gel method. FT-IR, Differential Scanning Calorimeter (DSC-TG) and Uv-visible Spectroscopy have been used to analysis the compound sols, films and optical properties for the use of this material as smart windows. FT-IR shows that for the compound, new characteristic absorption bands arise, which is different from pure WO3 or MoO3. DSC-TG shows the phase change during the temperature ascending from 50 to 800°C. The compound thin films performs relatively well in coloring response time, colored extent, coloring-bleaching recycling and gasochromic effect with non-unicity color.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shixiong She, Guang-ming Wu, Huiyu Yang, Jun Shen, G. Gao
Thin films of V2O5, especially vanadium oxide films with nano- and micro-structures, perform well as cathode material for Li ion batteries and charge storage devices. Thin films of V2O5 with different porosity were obtained by dip-coating sol-gel technique. V2O5 sols were prepared by dissolution of V2O5 powder in benzyl alcohol and isopropyl alcohol in proper proportion. Optical property and porosity of films were characterized by FTIR and ellipsometer. Electrochemical characterization was recorded by chronopotentiometry(CP) and cyclic voltammetry(CV). Furthermore, the study shows that the porous structures of V2O5 films had an effect on the stability and reversibility of the films.
{"title":"Optical and electrochemical properties of vanadium pentoxide porous film prepared by sol-gel technique","authors":"Shixiong She, Guang-ming Wu, Huiyu Yang, Jun Shen, G. Gao","doi":"10.1117/12.888456","DOIUrl":"https://doi.org/10.1117/12.888456","url":null,"abstract":"Thin films of V2O5, especially vanadium oxide films with nano- and micro-structures, perform well as cathode material for Li ion batteries and charge storage devices. Thin films of V2O5 with different porosity were obtained by dip-coating sol-gel technique. V2O5 sols were prepared by dissolution of V2O5 powder in benzyl alcohol and isopropyl alcohol in proper proportion. Optical property and porosity of films were characterized by FTIR and ellipsometer. Electrochemical characterization was recorded by chronopotentiometry(CP) and cyclic voltammetry(CV). Furthermore, the study shows that the porous structures of V2O5 films had an effect on the stability and reversibility of the films.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
X. Fang, Lanfang Yao, Lin Li, Linlin Tian, Ruiqing Xu, Shuo Wang
Magneto-optic properties of magnetic materials have much influence on the performance of these current sensors. For practical using, it is generally demanded that the sensing materials had the good magneto-optic properties of large Faraday rotation. Among the most attractive properties of the transparent materials containing Fe2O3 are those related to the magneto-optical effects. The Sol-gel processes are extensively used for the preparation of optical or magneto-optical nano-composite materials though the incorporation of metal ions in the silica matrix. In this study, the Nd2O3 doped Fe2O3-SiO2 nano-composite films with different concentrations of Nd2O3, heated temperature and the number of layers were prepared by sol-gel method. The dependence of Faraday rotation angle of films is studied at room temperature. We find that appropriate concentrations of Nd2O3 (Nd/Si=0.011) doped has improved magneto-optic properties of higher Faraday rotation angle, the θF value increases with the decrease of the temperature below 500°C, the absolute value of Faraday rotation angle increases as the number of layers increases.
{"title":"Preparation and Faraday rotation of Nd2O3 doped Fe2O3-SiO2 nano-composite films","authors":"X. Fang, Lanfang Yao, Lin Li, Linlin Tian, Ruiqing Xu, Shuo Wang","doi":"10.1117/12.888331","DOIUrl":"https://doi.org/10.1117/12.888331","url":null,"abstract":"Magneto-optic properties of magnetic materials have much influence on the performance of these current sensors. For practical using, it is generally demanded that the sensing materials had the good magneto-optic properties of large Faraday rotation. Among the most attractive properties of the transparent materials containing Fe2O3 are those related to the magneto-optical effects. The Sol-gel processes are extensively used for the preparation of optical or magneto-optical nano-composite materials though the incorporation of metal ions in the silica matrix. In this study, the Nd2O3 doped Fe2O3-SiO2 nano-composite films with different concentrations of Nd2O3, heated temperature and the number of layers were prepared by sol-gel method. The dependence of Faraday rotation angle of films is studied at room temperature. We find that appropriate concentrations of Nd2O3 (Nd/Si=0.011) doped has improved magneto-optic properties of higher Faraday rotation angle, the θF value increases with the decrease of the temperature below 500°C, the absolute value of Faraday rotation angle increases as the number of layers increases.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133562416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Le Guen, Min-Hui Hu, J. Andre, P. Jonnard, Sika Zhou, Haochuan Li, Jingtao Zhu, Zhanshan Wang, N. Mahne, A. Giglia, S. Nannarone, C. Meny
We study the introduction of Zr as a third material within a nanometric periodic Mg/Co structure designed to work as optical component in the EUV range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is reported to be 50% at 25.1 nm and 45° of grazing incidence. Nuclear Magnetic Resonance (NMR) measurements are performed to study the nearest neighbour local environment around the Co atoms.
{"title":"Introduction of Zr in Mg/Co nanometric periodic multilayers","authors":"K. Le Guen, Min-Hui Hu, J. Andre, P. Jonnard, Sika Zhou, Haochuan Li, Jingtao Zhu, Zhanshan Wang, N. Mahne, A. Giglia, S. Nannarone, C. Meny","doi":"10.1117/12.888193","DOIUrl":"https://doi.org/10.1117/12.888193","url":null,"abstract":"We study the introduction of Zr as a third material within a nanometric periodic Mg/Co structure designed to work as optical component in the EUV range. Mg/Co, Mg/Zr/Co, Mg/Co/Zr and Mg/Zr/Co/Zr multilayers are designed, then characterized in terms of structural quality and optical performances through X-ray and EUV reflectometry measurements respectively. For the Mg/Co/Zr structure, the reflectance value is reported to be 50% at 25.1 nm and 45° of grazing incidence. Nuclear Magnetic Resonance (NMR) measurements are performed to study the nearest neighbour local environment around the Co atoms.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130417844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Lv, Yonggang Wu, Heyun Wu, Leijie Ling, Zihuan Xia
Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).
{"title":"Preparation and characterization of tungsten oxide thin films with high electrochromic performance","authors":"G. Lv, Yonggang Wu, Heyun Wu, Leijie Ling, Zihuan Xia","doi":"10.1117/12.887560","DOIUrl":"https://doi.org/10.1117/12.887560","url":null,"abstract":"Tungsten oxide thin films were prepared by depositing WO3 onto glass substrates coated with ITO using reactive evaporation process at ambient temperature and 200°C respectively. The thin films were grown at different deposition rate. Chronoamperometry was carried out and spectral measurements were performed in situ. Results showed that the thin films prepared at low deposition rates possess higher coloration efficiency (CE), and the thin films grown at ambient temperature have high CE than those grown at 200°C. The origin of the differences in coloration efficiency of the thin films were analyzed and discussed based on the electrochromic mechanism of amorphous tungsten oxide films. The samples morphology was characterized by atom force microscopy (AFM).","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121217904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Near-infrared-ultraviolet optical properties of Sn0.925Mn0.075O2 (SMO) film grown on c-plane sapphire substrate have been investigated by the transmittance spectra in the photon energy of 0.45-6.5 eV (190-2650 nm) from 5.3-300 K. The optical constants have been extracted by fitting the experimental data with the Adachi's model. The optical band gap of the film can be estimated from the relation (αE)2proportional to(hυ-Eg). It is found that the absorption edge shifts to a lower energy side with increasing the temperature and the band gap Eg decreases from 3.80 to 3.72 eV. The parameters αB and θB of the Bose-Einstein model are 45.4 meV and 221.8 K, respectively, which could be ascribed to the thermal expansion of crystal lattice and the carrier-phonon interaction. The band narrowing coefficient dEg/dT of the SMO film is estimated to be -3.92x10-4 eV/K at room temperature.
{"title":"Temperature dependence of optical properties in Sn0.925Mn0.075O2 film determined by transmittance spectra","authors":"W. Zhang, W. L. Yu, K. Jiang, Z. Hu","doi":"10.1117/12.888311","DOIUrl":"https://doi.org/10.1117/12.888311","url":null,"abstract":"Near-infrared-ultraviolet optical properties of Sn0.925Mn0.075O2 (SMO) film grown on c-plane sapphire substrate have been investigated by the transmittance spectra in the photon energy of 0.45-6.5 eV (190-2650 nm) from 5.3-300 K. The optical constants have been extracted by fitting the experimental data with the Adachi's model. The optical band gap of the film can be estimated from the relation (αE)2proportional to(hυ-Eg). It is found that the absorption edge shifts to a lower energy side with increasing the temperature and the band gap Eg decreases from 3.80 to 3.72 eV. The parameters αB and θB of the Bose-Einstein model are 45.4 meV and 221.8 K, respectively, which could be ascribed to the thermal expansion of crystal lattice and the carrier-phonon interaction. The band narrowing coefficient dEg/dT of the SMO film is estimated to be -3.92x10-4 eV/K at room temperature.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126772419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the heterojunction system, SnS was used as the absorption layer of solar cells. In this work, Cd-free ZnS material was selected as the window layer. SnS and ZnS were prepared by vacuum evaporation. Annealing plays a considerable role in the process which will affect the crystal structure and composition of the film. In this experiment, the films were annealed at temperature 300°C, 400°C and 500°C in N2 atmosphere. In XRD diagram, two strong diffraction peaks at 29.2° and 32.2° were observed, corresponding to β-ZnS (111) and SnS (111), respectively. SEM images show that average grain size of the film is about 50 nm. Noticeable increase of grain size and clear boundaries between grains were found after annealing. The electrical properties of the SnS thin films were changed through varying annealing processes. All the results indicate that ZnS/SnS structure is a good choice of SnS solar cells.
{"title":"Influence of heat treatment on the microstruture of SnS/ZnS film prepared by vacuum evaporation","authors":"Wenjun Wu, Wei-min Shi, Zhe Hu, Sheng Liu, Weiguang Yang, Guang-pu Wei","doi":"10.1117/12.888226","DOIUrl":"https://doi.org/10.1117/12.888226","url":null,"abstract":"In the heterojunction system, SnS was used as the absorption layer of solar cells. In this work, Cd-free ZnS material was selected as the window layer. SnS and ZnS were prepared by vacuum evaporation. Annealing plays a considerable role in the process which will affect the crystal structure and composition of the film. In this experiment, the films were annealed at temperature 300°C, 400°C and 500°C in N2 atmosphere. In XRD diagram, two strong diffraction peaks at 29.2° and 32.2° were observed, corresponding to β-ZnS (111) and SnS (111), respectively. SEM images show that average grain size of the film is about 50 nm. Noticeable increase of grain size and clear boundaries between grains were found after annealing. The electrical properties of the SnS thin films were changed through varying annealing processes. All the results indicate that ZnS/SnS structure is a good choice of SnS solar cells.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126952701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang
The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.
{"title":"Optimization of triangle grating structures for light trapping in thin film silicon solar cells","authors":"Leijie Ling, Yonggang Wu, Zihuan Xia, N. Chen, Zhenhua Wang","doi":"10.1117/12.887556","DOIUrl":"https://doi.org/10.1117/12.887556","url":null,"abstract":"The influence of different triangular grating shapes on the absorption performance of the thin-film silicon solar cell is discussed in this paper. A finite difference time domain method is used to make the numerical simulation. By studying the shape of the triangular grating, the designs of structure are optimized to achieve higher short circuit currents and quantum efficiencies. We find that the blaze grating structure is the ideal initial texture for thin-film solar cells. Compared with the triangular grating, the short circuit current of the blaze grating is improved by 7.09% for the entire spectrum. The short circuit current for the short wavelength is increased by 13.5% whereas the short circuit current in the red and infrared part of spectrum is increased by 86.5%.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115351635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：