Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882271
T. Igarashi, K. Fukagai, H. Chida, T. Miyazaki, M. Horie, S. Ishikawa, T. Torikai
A buried ridge 980 nm InGaAs-GaAs double QW laser diode (LD) with current-blocking facets has demonstrated catastrophic optical damage (COD)-free maximum output power of 760 mW and linear power over 500 mW. The LDs show the same light output characteristics even after 1600 hours aging at 300 mW and 50/spl deg/C.
{"title":"COD-free high power (760 mW) 980 nm laser diodes with current-blocking facets","authors":"T. Igarashi, K. Fukagai, H. Chida, T. Miyazaki, M. Horie, S. Ishikawa, T. Torikai","doi":"10.1109/ISLC.2000.882271","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882271","url":null,"abstract":"A buried ridge 980 nm InGaAs-GaAs double QW laser diode (LD) with current-blocking facets has demonstrated catastrophic optical damage (COD)-free maximum output power of 760 mW and linear power over 500 mW. The LDs show the same light output characteristics even after 1600 hours aging at 300 mW and 50/spl deg/C.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131792339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882302
G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, E. Omura
We have developed uncooled and directly modulated /spl lambda//4 shifted 1.3 /spl mu/m DFB laser diodes for 10 Gb/s Ethernet. By adopting a short cavity structure, a high relaxation oscillation frequency of 12.0 GHz at 25/spl deg/C was obtained. Even at 70/spl deg/C, it was over 10.4 GHz. The extinction ratio was 9.8 dB and the frequency bandwidth was 14 GHz at 25/spl deg/C. The power penalty of 0.6 dB at a BER of 10/sup -11/ through a +40 ps/nm dispersion SMF was obtained. This device is useful for 10 Gb/s Ethernet using over 20 km SMF without cooler.
{"title":"Transmission characteristics of uncooled and directly modulated 1.3 micrometers distributed feedback laser diode for serial 10 Giga bit Ethernet","authors":"G. Sakaino, Y. Hisa, K. Takagi, T. Aoyagi, E. Omura","doi":"10.1109/ISLC.2000.882302","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882302","url":null,"abstract":"We have developed uncooled and directly modulated /spl lambda//4 shifted 1.3 /spl mu/m DFB laser diodes for 10 Gb/s Ethernet. By adopting a short cavity structure, a high relaxation oscillation frequency of 12.0 GHz at 25/spl deg/C was obtained. Even at 70/spl deg/C, it was over 10.4 GHz. The extinction ratio was 9.8 dB and the frequency bandwidth was 14 GHz at 25/spl deg/C. The power penalty of 0.6 dB at a BER of 10/sup -11/ through a +40 ps/nm dispersion SMF was obtained. This device is useful for 10 Gb/s Ethernet using over 20 km SMF without cooler.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133691815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882270
T. Yamaguchi, Y. Ohki, Y. Irie, T. Shimizu, A. Kasukawa
We report an anomalous phenomenon of output power instability in 980nm LD module with polarisation maintaining fibre (PMF) and fibre Bragg grating (FBG) which is found out at the first time by us. Next, we describe a novel configuration of PMF to eliminate not only the state of polarisation (SOP) fluctuation but also the instability of the output power.
{"title":"A novel configuration of 980 nm pumping laser module using fiber Bragg grating and polarization maintaining fiber","authors":"T. Yamaguchi, Y. Ohki, Y. Irie, T. Shimizu, A. Kasukawa","doi":"10.1109/ISLC.2000.882270","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882270","url":null,"abstract":"We report an anomalous phenomenon of output power instability in 980nm LD module with polarisation maintaining fibre (PMF) and fibre Bragg grating (FBG) which is found out at the first time by us. Next, we describe a novel configuration of PMF to eliminate not only the state of polarisation (SOP) fluctuation but also the instability of the output power.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115209188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882312
T. Asano, T. Tojyo, K. Yanashima, M. Takeya, T. Hino, S. Ikeda, S. Kijima, S. Ansai, K. Shibuya, S. Goto, S. Tomiya, Y. Yabuki, T. Aoki, S. Uchida, M. Ikeda
The lifetime of AlGaInN-based violet laser diodes is restricted by the high dislocation densities caused by the large difference between the lattice constants and thermal expansion coefficients of GaN and sapphire. In order to reduce the dislocation density, epitaxial lateral overgrowth (ELO) techniques have been proposed, leading to the higher performance of AlGaInN lasers. In this work, we compared the lasing characteristics of AlGaInN lasers grown on ELO-GaN with those grown on sapphire substrates.
{"title":"AlGaInN laser diodes grown on an ELO-GaN substrate vs. on a sapphire substrate","authors":"T. Asano, T. Tojyo, K. Yanashima, M. Takeya, T. Hino, S. Ikeda, S. Kijima, S. Ansai, K. Shibuya, S. Goto, S. Tomiya, Y. Yabuki, T. Aoki, S. Uchida, M. Ikeda","doi":"10.1109/ISLC.2000.882312","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882312","url":null,"abstract":"The lifetime of AlGaInN-based violet laser diodes is restricted by the high dislocation densities caused by the large difference between the lattice constants and thermal expansion coefficients of GaN and sapphire. In order to reduce the dislocation density, epitaxial lateral overgrowth (ELO) techniques have been proposed, leading to the higher performance of AlGaInN lasers. In this work, we compared the lasing characteristics of AlGaInN lasers grown on ELO-GaN with those grown on sapphire substrates.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124372962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882314
A. Mereuta, S. Bouchoule, I. Sagnes, F. Alexandre, H. Sik, J. Decobert
New InGa(N)As/GaAs structures have recently been presented as an interesting alternative to InP-based materials, due to the possibility of realising the 1.3 and 1.55 /spl mu/m lasers on a GaAs substrate, and to a strong electron confinement at the interfaces between the InGaNAs active layer and the AlGaAs or InGaP cladding layers. Improved thermal performance is thus expected from the InGaAsN-based lasers. In the work we present a comparative study of the laser characteristics of strain InGa(N)As/GaAs QWs structures grown on a GaAs substrate by atmospheric pressure. Dimethylhydrazine has been used as source of nitrogen for the growth, and the growth conditions (temperature, V/III flux ratio, ratio of DMHB in the gas phase) has been chosen to obtain a mirror like surface and maximum nitrogen incorporation.
{"title":"Laser performance comparison of long-wavelength strained InGaNAs and InGaAs QW laser diodes grown by AP-MOVPE","authors":"A. Mereuta, S. Bouchoule, I. Sagnes, F. Alexandre, H. Sik, J. Decobert","doi":"10.1109/ISLC.2000.882314","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882314","url":null,"abstract":"New InGa(N)As/GaAs structures have recently been presented as an interesting alternative to InP-based materials, due to the possibility of realising the 1.3 and 1.55 /spl mu/m lasers on a GaAs substrate, and to a strong electron confinement at the interfaces between the InGaNAs active layer and the AlGaAs or InGaP cladding layers. Improved thermal performance is thus expected from the InGaAsN-based lasers. In the work we present a comparative study of the laser characteristics of strain InGa(N)As/GaAs QWs structures grown on a GaAs substrate by atmospheric pressure. Dimethylhydrazine has been used as source of nitrogen for the growth, and the growth conditions (temperature, V/III flux ratio, ratio of DMHB in the gas phase) has been chosen to obtain a mirror like surface and maximum nitrogen incorporation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130075277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882323
G.T. Liu, H. Li, A. Stintz, T. Newell, L. Lester, K. Malloy
The issues necessary to achieve high ground state modal gain and high T/sub 0/ value are addressed. It is found that the modal gain and the T/sub 0/ value can be increased simultaneously. Three different ways to improve the modal gain and T/sub 0/ value are discussed. Additionally, it is pointed out that the low threshold current density of QD lasers, is due primarily to "physical scaling" rather than any quantum effect. The performance tradeoffs occur between the threshold current density and the ground state modal gain and T/sub 0/ value. QD lasers with InAs/In/sub x/Ga/sub 1-x/As dots-in-a-well (DWELL) structure are used.
{"title":"Modal gain and T/sub 0/ value improvements in quantum dot lasers using dots-in-a-well (DWELL) structure","authors":"G.T. Liu, H. Li, A. Stintz, T. Newell, L. Lester, K. Malloy","doi":"10.1109/ISLC.2000.882323","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882323","url":null,"abstract":"The issues necessary to achieve high ground state modal gain and high T/sub 0/ value are addressed. It is found that the modal gain and the T/sub 0/ value can be increased simultaneously. Three different ways to improve the modal gain and T/sub 0/ value are discussed. Additionally, it is pointed out that the low threshold current density of QD lasers, is due primarily to \"physical scaling\" rather than any quantum effect. The performance tradeoffs occur between the threshold current density and the ground state modal gain and T/sub 0/ value. QD lasers with InAs/In/sub x/Ga/sub 1-x/As dots-in-a-well (DWELL) structure are used.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121547520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882301
G. Morthier, G. Sarlet, R. Baets, H. Ishii, Y. Yoshikuni
Widely tunable laser diodes are currently regarded as promising light sources for WDM communication systems in which they can economically be used as spare transmitters. Their functionality could however also be useful in a number of new system concepts that are currently under investigation. For some of these new system concepts, it is relevant to know up to which bit rate the widely tunable laser diodes could be directly modulated. We have studied the direct modulation properties of 3 types of widely tunable laser diodes: the Altitun GCSR laser, the NTT SSG-DBR laser and the Marconi SGDBR laser. Different types of measurements, from parasitic-free RIN measurements to eye-diagram measurements and link experiments, have been carried out. None of the investigated laser designs however was particularly optimised for high-speed operation. From the RIN measurements, the K-factor and the theoretical maximum modulation frequency under small-signal modulation have been derived. For all investigated lasers and for typically 40 to 50 channels with a spacing of 100 GHz, the theoretical maximum modulation frequency was always found to be close to and generally over 10 GHz.
{"title":"The direct modulation bandwidth of widely tunable DBR laser diodes","authors":"G. Morthier, G. Sarlet, R. Baets, H. Ishii, Y. Yoshikuni","doi":"10.1109/ISLC.2000.882301","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882301","url":null,"abstract":"Widely tunable laser diodes are currently regarded as promising light sources for WDM communication systems in which they can economically be used as spare transmitters. Their functionality could however also be useful in a number of new system concepts that are currently under investigation. For some of these new system concepts, it is relevant to know up to which bit rate the widely tunable laser diodes could be directly modulated. We have studied the direct modulation properties of 3 types of widely tunable laser diodes: the Altitun GCSR laser, the NTT SSG-DBR laser and the Marconi SGDBR laser. Different types of measurements, from parasitic-free RIN measurements to eye-diagram measurements and link experiments, have been carried out. None of the investigated laser designs however was particularly optimised for high-speed operation. From the RIN measurements, the K-factor and the theoretical maximum modulation frequency under small-signal modulation have been derived. For all investigated lasers and for typically 40 to 50 channels with a spacing of 100 GHz, the theoretical maximum modulation frequency was always found to be close to and generally over 10 GHz.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121463906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882329
G. Venus, A. Gubenko, V. Dashevskii, E. Portnoi, E. Avrutin, J. Frahm, J. Kubler, S. Schelhase, A. Paraskevopoulos
To create the 1.5-/spl mu/m single-lobed Q-switched picosecond lasers with pulse energies over 50 pJ, we used a simple InGaAsP-InP double heterostructure with a 0.25 /spl mu/m thick active layer. This choice of active layer thickness was a compromise between the capacity for storing large carrier densities in the active layer and preserving single transverse mode operation. The ultrafast saturable absorber was created by high-energy heavy ion implantation; this method has been established as highly suitable for structures with thick active layer.
{"title":"Multi-section ion-implantation-induced saturable absorbers for high-power 1.5-/spl mu/m picosecond laser diodes","authors":"G. Venus, A. Gubenko, V. Dashevskii, E. Portnoi, E. Avrutin, J. Frahm, J. Kubler, S. Schelhase, A. Paraskevopoulos","doi":"10.1109/ISLC.2000.882329","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882329","url":null,"abstract":"To create the 1.5-/spl mu/m single-lobed Q-switched picosecond lasers with pulse energies over 50 pJ, we used a simple InGaAsP-InP double heterostructure with a 0.25 /spl mu/m thick active layer. This choice of active layer thickness was a compromise between the capacity for storing large carrier densities in the active layer and preserving single transverse mode operation. The ultrafast saturable absorber was created by high-energy heavy ion implantation; this method has been established as highly suitable for structures with thick active layer.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133403839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882281
M. Aoki, A. Ohishi, M. Shirai, R. Kaneko, H. Kuwano, S. Tsuji
We have demonstrated a simple wavelength-tunable integrated laser/modulator based on an InGaAsP strained active layer that enables continuous wavelength tuning of several nm with a single electrical control. A 2.5-Gbit/s 600-km normal fiber transmission was demonstrated with a wavelength tuning range of 200 GHz.
{"title":"Thin-film heater-loaded wavelength-tunable integrated laser/modulator","authors":"M. Aoki, A. Ohishi, M. Shirai, R. Kaneko, H. Kuwano, S. Tsuji","doi":"10.1109/ISLC.2000.882281","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882281","url":null,"abstract":"We have demonstrated a simple wavelength-tunable integrated laser/modulator based on an InGaAsP strained active layer that enables continuous wavelength tuning of several nm with a single electrical control. A 2.5-Gbit/s 600-km normal fiber transmission was demonstrated with a wavelength tuning range of 200 GHz.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"78 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114063209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882259
L. Coldren
For about a decade viable vertical-cavity surface emitting lasers (VCSELs) in the short wavelength 850-980 nm range have existed based upon the lattice matched InGaAs/AlGaAs/GaAs materials system. Reasonable devices extending into the visible (/spl sim/650 nm) have also been created more recently, generally using AlInGaP active layers. In most cases, devices are grown in a single epitaxial growth step, either by MBE or MOCVD approaches. In some cases, a top dielectric mirror has been employed, but the reliability of such approaches has not been fully verified. To date, all commercially successful devices have used all-epitaxial approaches. The paper reviews recent progress with the various approaches and focus in on the issues involved in the all-epitaxial approaches. From current progress, extrapolated levels of expected performance are also presented.
{"title":"Long-wavelength VCSELs: the case for all-epitaxial approaches","authors":"L. Coldren","doi":"10.1109/ISLC.2000.882259","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882259","url":null,"abstract":"For about a decade viable vertical-cavity surface emitting lasers (VCSELs) in the short wavelength 850-980 nm range have existed based upon the lattice matched InGaAs/AlGaAs/GaAs materials system. Reasonable devices extending into the visible (/spl sim/650 nm) have also been created more recently, generally using AlInGaP active layers. In most cases, devices are grown in a single epitaxial growth step, either by MBE or MOCVD approaches. In some cases, a top dielectric mirror has been employed, but the reliability of such approaches has not been fully verified. To date, all commercially successful devices have used all-epitaxial approaches. The paper reviews recent progress with the various approaches and focus in on the issues involved in the all-epitaxial approaches. From current progress, extrapolated levels of expected performance are also presented.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121683162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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