Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882304
K. Takaoka, M. Ishikawa, G. Hatakoshi
InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) are attractive light sources for plastic optical fiber (POF)-based low-cost and high-speed data links, because the POF has a low-loss window around the 650-nm wavelength region, and VCSELs are suitable for high-speed modulation and can be treated easily as is the case for LEDs. We have fabricated InGaAlP-based red VCSELs using the proton-implanted planar structures, and realized continuous-wave (CW) operation up to 60/spl deg/C with the lasing wavelength of 666 nm and the threshold current of 2.5 mA.
{"title":"Low-threshold and high-temperature operation of InGaAlP-based proton-implanted red VCSELs","authors":"K. Takaoka, M. Ishikawa, G. Hatakoshi","doi":"10.1109/ISLC.2000.882304","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882304","url":null,"abstract":"InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs) are attractive light sources for plastic optical fiber (POF)-based low-cost and high-speed data links, because the POF has a low-loss window around the 650-nm wavelength region, and VCSELs are suitable for high-speed modulation and can be treated easily as is the case for LEDs. We have fabricated InGaAlP-based red VCSELs using the proton-implanted planar structures, and realized continuous-wave (CW) operation up to 60/spl deg/C with the lasing wavelength of 666 nm and the threshold current of 2.5 mA.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129694690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882265
J. Lott, V. Ustinov, N. Maleev, A. Zhukov, M. Maximov, B. V. Volovik, Z. Alferov, D. Bimberg
Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.
{"title":"Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 /spl mu/m","authors":"J. Lott, V. Ustinov, N. Maleev, A. Zhukov, M. Maximov, B. V. Volovik, Z. Alferov, D. Bimberg","doi":"10.1109/ISLC.2000.882265","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882265","url":null,"abstract":"Pulsed lasing at 1.3 /spl mu/m via the exciton ground state is demonstrated for vertical cavity surface emitting lasers containing three uncoupled sheets of InAs quantum dot active layers. The dots lie within InGaAs quantum wells separated by GaAs barrier layers. The structures are grown on GaAs substrates and when fabricated include selectively oxidized AlO current apertures and AlO/GaAs distributed Bragg reflectors. Experimental devices operate pulsed at 20/spl deg/C with threshold currents below 2 mA and differential slope efficiencies of 40%.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131374359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882313
K. Otsubo, N. Sekine, Y. Nishijima, O. Aoki, A. Kuramata, H. Ishikawa
We have fabricated 1.3 /spl mu/m strained InGaAs-InAlGaAs quantum well lasers on InGaAs ternary substrates. A low J/N, of 74 A/cm/sup 2//well and high T/sub 0/ of 106 K were simultaneously obtained, in spite of poor surface morphology of the wafers. The T/sub 0/ increased when J/N was reduced, as we previously reported. The InGaAs substrates whose quality is the same as that of commercial InP and GaAs substrates should make 1.3 /spl mu/m lasers of much lower threshold and higher T/sub 0/ possible.
{"title":"1.3 /spl mu/m strained quantum well lasers on InGaAs ternary substrates with a low threshold current density (<80 A/cm/sup 2//well)","authors":"K. Otsubo, N. Sekine, Y. Nishijima, O. Aoki, A. Kuramata, H. Ishikawa","doi":"10.1109/ISLC.2000.882313","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882313","url":null,"abstract":"We have fabricated 1.3 /spl mu/m strained InGaAs-InAlGaAs quantum well lasers on InGaAs ternary substrates. A low J/N, of 74 A/cm/sup 2//well and high T/sub 0/ of 106 K were simultaneously obtained, in spite of poor surface morphology of the wafers. The T/sub 0/ increased when J/N was reduced, as we previously reported. The InGaAs substrates whose quality is the same as that of commercial InP and GaAs substrates should make 1.3 /spl mu/m lasers of much lower threshold and higher T/sub 0/ possible.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121526193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882276
M. Uemukai, T. Suhara, K. Yutani, N. Shimada, Y. Fukumoto, H. Nishihara, A. Larsson
We present a lensless tunable external-cavity laser (TECL) using monolithically integrated tapered InGaAs-AlGaAs SQW amplifier and grating coupler, which can be fabricated without regrowth and emits a collimated output beam. We demonstrate a well-collimated output beam and wide-range tuning of the novel TECL.
{"title":"Tunable external-cavity semiconductor laser using monolithically integrated tapered amplifier and grating coupler for collimating","authors":"M. Uemukai, T. Suhara, K. Yutani, N. Shimada, Y. Fukumoto, H. Nishihara, A. Larsson","doi":"10.1109/ISLC.2000.882276","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882276","url":null,"abstract":"We present a lensless tunable external-cavity laser (TECL) using monolithically integrated tapered InGaAs-AlGaAs SQW amplifier and grating coupler, which can be fabricated without regrowth and emits a collimated output beam. We demonstrate a well-collimated output beam and wide-range tuning of the novel TECL.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134257413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882296
K.L. Lee, C. Shu, H. Liu
We have demonstrated the generation of multi-wavelength channel single-mode pulses from a FP laser diode. The laser diode is sequentially self-seeded by 10 wavelength components with a repetition frequency of 7.42 GHz. The successful implementation of this scheme indicates the potential to generate a multi-wavelength output beyond 10 GHz, which would be useful in photonic ADCs and WDM communications.
{"title":"Sequential generation of 10-wavelength picosecond pulses from a semiconductor laser using sub-harmonic pulse-gating in a dispersion-balanced external cavity","authors":"K.L. Lee, C. Shu, H. Liu","doi":"10.1109/ISLC.2000.882296","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882296","url":null,"abstract":"We have demonstrated the generation of multi-wavelength channel single-mode pulses from a FP laser diode. The laser diode is sequentially self-seeded by 10 wavelength components with a repetition frequency of 7.42 GHz. The successful implementation of this scheme indicates the potential to generate a multi-wavelength output beyond 10 GHz, which would be useful in photonic ADCs and WDM communications.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122365897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882333
R. Shau, M. Ortsiefer, G. Bohm, F. Kohler, M. Amann
A novel approach for VCSELs in the 1.5-1.8 /spl mu/m wavelength range has been presented yielding submilliamp lasing in CW operation to beyond room temperature, optical powers in excess of 1 mW and single mode operation.
{"title":"InP-based vertical-cavity surface-emitting lasers for 1.5-1.8 /spl mu/m wavelength range","authors":"R. Shau, M. Ortsiefer, G. Bohm, F. Kohler, M. Amann","doi":"10.1109/ISLC.2000.882333","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882333","url":null,"abstract":"A novel approach for VCSELs in the 1.5-1.8 /spl mu/m wavelength range has been presented yielding submilliamp lasing in CW operation to beyond room temperature, optical powers in excess of 1 mW and single mode operation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116098720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882303
Y. Yadin, J. Scheuer, Y. Gross, M. Orenstein
The VCSEL, combining a nonlinear medium with a two dimensional optical resonator, can be a source of complex optical field patterns - which can be employed both for sophisticated signaling in future free space optical interconnection schemes as well as for probing the internal laser nonlinearities. Coherently coupled VCSELs enhance further these notions. We present experimentally and theoretically the evolution of supermodes with angular momentum - composed of multiple optical vortices. The nonlinearity of the laser oscillators is the source both for generation of the optical vortex, for the interlaser coupling and for the stability/instability of the patterns. Exploring these issues assisted us in generating a source with novel emission as well as gaining understanding on the internal laser parameters. We examined the unique near-field (NF), far-field (FF) and spectral intensity patterns emerging from coherent arrays of bottom emitting proton implanted, medium area VCSELs (10-20 /spl mu/m in diameter each). Each VCSEL was emitting an optical field vortex characterized by two "charges" - the topological charge (either +1 or -1 with the respective angular momentum), and the relative phase (within the array). The rich variety of complex supermodes compared to arrays of "regular" beams stemmed from this dual charge. Starting from a pair of lasers, two supermodes were found: 1. Anti-phase locked vortices with the same charge and 2. In-phase locked vortices with opposite charges.
{"title":"Supermodes with angular momentum from coherent VCSEL arrays-emergence and stability","authors":"Y. Yadin, J. Scheuer, Y. Gross, M. Orenstein","doi":"10.1109/ISLC.2000.882303","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882303","url":null,"abstract":"The VCSEL, combining a nonlinear medium with a two dimensional optical resonator, can be a source of complex optical field patterns - which can be employed both for sophisticated signaling in future free space optical interconnection schemes as well as for probing the internal laser nonlinearities. Coherently coupled VCSELs enhance further these notions. We present experimentally and theoretically the evolution of supermodes with angular momentum - composed of multiple optical vortices. The nonlinearity of the laser oscillators is the source both for generation of the optical vortex, for the interlaser coupling and for the stability/instability of the patterns. Exploring these issues assisted us in generating a source with novel emission as well as gaining understanding on the internal laser parameters. We examined the unique near-field (NF), far-field (FF) and spectral intensity patterns emerging from coherent arrays of bottom emitting proton implanted, medium area VCSELs (10-20 /spl mu/m in diameter each). Each VCSEL was emitting an optical field vortex characterized by two \"charges\" - the topological charge (either +1 or -1 with the respective angular momentum), and the relative phase (within the array). The rich variety of complex supermodes compared to arrays of \"regular\" beams stemmed from this dual charge. Starting from a pair of lasers, two supermodes were found: 1. Anti-phase locked vortices with the same charge and 2. In-phase locked vortices with opposite charges.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116391353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882319
Y. Tohmori, T. Ito, K. Magari, Y. Kawaguchi, Y. Kadota, H. Kamioka, H. Oohashi, Y. Suzuki
We have designed and fabricated a polarization independent spot-size convertor-semiconductor optical amplifier (SS-SOA) using a wide rectangular waveguide for ease of fabrication. The polarization dependence of the gain in the active region and that of the coupling efficiency in the SS regions on both sides of the device are compensated together by using a separate-confinement heterostructure (SCH) layer in the active region. The SS-SOA exhibits high-performance characteristics, such as low polarization dependence, high gain, efficient coupling to fiber, and uniform far-field-patterns.
{"title":"High gain and low polarization dependent 1.55-/spl mu/m semiconductor optical amplifier with a spot-size converter","authors":"Y. Tohmori, T. Ito, K. Magari, Y. Kawaguchi, Y. Kadota, H. Kamioka, H. Oohashi, Y. Suzuki","doi":"10.1109/ISLC.2000.882319","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882319","url":null,"abstract":"We have designed and fabricated a polarization independent spot-size convertor-semiconductor optical amplifier (SS-SOA) using a wide rectangular waveguide for ease of fabrication. The polarization dependence of the gain in the active region and that of the coupling efficiency in the SS regions on both sides of the device are compensated together by using a separate-confinement heterostructure (SCH) layer in the active region. The SS-SOA exhibits high-performance characteristics, such as low polarization dependence, high gain, efficient coupling to fiber, and uniform far-field-patterns.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115376276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882308
K. Boucke
The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.
{"title":"Numerical simulations of new high-power, high-brightness diode laser structures","authors":"K. Boucke","doi":"10.1109/ISLC.2000.882308","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882308","url":null,"abstract":"The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115279339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882283
D. Ackerman, J.E. Johnson, L. Zhang, S. Chu, E. Dean, K. Kamath, L. Ketelsen
Tunable optical sources used in dense wavelength division multiplexed (DWDM) systems, such as distributed Bragg reflector (DBR) lasers, are highly susceptible to aging-induced wavelength drift. Without the stabilizing influence of gain clamping in the tuning section, the tendency for a tunable source to drift is greater than that of a fixed wavelength source, such as a distributed feedback or electroabsorption modulated laser. Aging of tuning sections can cause a free-running tunable source to wander out of an allotted channel band or, in a severe case, to mode hop. Wavelength drift in a tunable source is mitigated by closed loop feedback, but with time, aging still distorts the multi-dimensional channel map of optimized operating conditions. Assessing the potential for a tunable source to age is essential to ensuring device and system reliability. Using a novel technique, we assess aging in an electro-absorption modulated, distributed Bragg reflector (EADBR) laser using change of Bragg wavelength as a measure of increase of non-radiative recombination.
{"title":"Assessing aging in tunable electro-absorption modulated, distributed Bragg reflector lasers","authors":"D. Ackerman, J.E. Johnson, L. Zhang, S. Chu, E. Dean, K. Kamath, L. Ketelsen","doi":"10.1109/ISLC.2000.882283","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882283","url":null,"abstract":"Tunable optical sources used in dense wavelength division multiplexed (DWDM) systems, such as distributed Bragg reflector (DBR) lasers, are highly susceptible to aging-induced wavelength drift. Without the stabilizing influence of gain clamping in the tuning section, the tendency for a tunable source to drift is greater than that of a fixed wavelength source, such as a distributed feedback or electroabsorption modulated laser. Aging of tuning sections can cause a free-running tunable source to wander out of an allotted channel band or, in a severe case, to mode hop. Wavelength drift in a tunable source is mitigated by closed loop feedback, but with time, aging still distorts the multi-dimensional channel map of optimized operating conditions. Assessing the potential for a tunable source to age is essential to ensuring device and system reliability. Using a novel technique, we assess aging in an electro-absorption modulated, distributed Bragg reflector (EADBR) laser using change of Bragg wavelength as a measure of increase of non-radiative recombination.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126798135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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