Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882285
T. Sudoh, D. Takemoto, T. Tsuchiya, M. Aoki, S. Tsuji
We have successfully demonstrated high characteristic temperature, low differential resistance, and stable single-longitudinal-mode operation of 1.3-μm InGaAlAs MQW DFB lasers with high reliability. These excellent characteristics indicate that this laser is quite suitable for low-cost transmitters.
{"title":"Highly reliable 1.3-/spl mu/m InGaAlAs MQW DFB lasers","authors":"T. Sudoh, D. Takemoto, T. Tsuchiya, M. Aoki, S. Tsuji","doi":"10.1109/ISLC.2000.882285","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882285","url":null,"abstract":"We have successfully demonstrated high characteristic temperature, low differential resistance, and stable single-longitudinal-mode operation of 1.3-μm InGaAlAs MQW DFB lasers with high reliability. These excellent characteristics indicate that this laser is quite suitable for low-cost transmitters.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122327837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882275
G. Witjaksono, D. Botez
Here we present a composite DFB/DBR device, which fundamentally favors lasing in the symmetric mode over a wide range in central-phaseshift value. External differential quantum efficiencies in excess of 50% are obtained, and the guided-field profile is substantially uniform. A double-quantum-well InGaAs-InGaAsP active region with InGaP cladding layers, and a grating formed in the p+-GaAs cap layer. A GaAs-Au grating provides both high coupling coefficient, K, as well as insures that all first-order diffracted light is collected.
{"title":"Surface-emitting, single-lobe operation from 2nd-order DFB/DBR lasers with central grating phaseshift","authors":"G. Witjaksono, D. Botez","doi":"10.1109/ISLC.2000.882275","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882275","url":null,"abstract":"Here we present a composite DFB/DBR device, which fundamentally favors lasing in the symmetric mode over a wide range in central-phaseshift value. External differential quantum efficiencies in excess of 50% are obtained, and the guided-field profile is substantially uniform. A double-quantum-well InGaAs-InGaAsP active region with InGaP cladding layers, and a grating formed in the p+-GaAs cap layer. A GaAs-Au grating provides both high coupling coefficient, K, as well as insures that all first-order diffracted light is collected.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133702819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882277
S. Kristj́ansson, N. Eriksson, P. Modh, Anders Larsson
Here we compare the performance of InGaAs SQW tapered unstable resonator lasers (TURL) with linear-shaped-taper with lasers that have a trumpet-shaped-taper that follows the shape of the optical mode as it expands while propagating in the laser resonator. The laser resonator is defined by two first-order feedback gratings and is completely separated from the grating outcoupler.
{"title":"Surface-emitting tapered unstable resonator laser with integrated focusing grating coupler comparing linear and trumpet shaped taper","authors":"S. Kristj́ansson, N. Eriksson, P. Modh, Anders Larsson","doi":"10.1109/ISLC.2000.882277","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882277","url":null,"abstract":"Here we compare the performance of InGaAs SQW tapered unstable resonator lasers (TURL) with linear-shaped-taper with lasers that have a trumpet-shaped-taper that follows the shape of the optical mode as it expands while propagating in the laser resonator. The laser resonator is defined by two first-order feedback gratings and is completely separated from the grating outcoupler.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"235 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122438317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882309
J. Mulet, S. Balle, M. S. Miguel, C. Mirasso
We focus our attention on the selection processes and turn-on delay for the switch-on of different transverse modes in VCSELs. We consider different excitation conditions and active-region diameters, addressing the experimental situations in which the transient response of gain-guided VCSELs to a current pulse is taken into account (1 ns duration, 100 ps rise-time). We consider two thermal effects, namely, a temperature dependent detuning between the band-gap and the cavity resonance and the thermal lensing (TL) effect.
{"title":"Transverse and polarization mode selection in vertical-cavity surface-emitting lasers","authors":"J. Mulet, S. Balle, M. S. Miguel, C. Mirasso","doi":"10.1109/ISLC.2000.882309","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882309","url":null,"abstract":"We focus our attention on the selection processes and turn-on delay for the switch-on of different transverse modes in VCSELs. We consider different excitation conditions and active-region diameters, addressing the experimental situations in which the transient response of gain-guided VCSELs to a current pulse is taken into account (1 ns duration, 100 ps rise-time). We consider two thermal effects, namely, a temperature dependent detuning between the band-gap and the cavity resonance and the thermal lensing (TL) effect.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127537777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882266
T. Sale, G. Knowles, S. Sweeney, A. Onischenko, J. Frost, S. Pinches, J. Woodhead
Electron leakage into the p-DBR is the major process limiting the performance of visible VCSELs. It can be reduced by improving electron confinement, or made less important by reducing the mirror reflectivity. By doing this we would then expect to measure even higher output powers at room temperature, comparable to our low temperature results.
{"title":"-180 to +80/spl deg/C CW lasing in visible VCSELs","authors":"T. Sale, G. Knowles, S. Sweeney, A. Onischenko, J. Frost, S. Pinches, J. Woodhead","doi":"10.1109/ISLC.2000.882266","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882266","url":null,"abstract":"Electron leakage into the p-DBR is the major process limiting the performance of visible VCSELs. It can be reduced by improving electron confinement, or made less important by reducing the mirror reflectivity. By doing this we would then expect to measure even higher output powers at room temperature, comparable to our low temperature results.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127145644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882295
O. Kwon, B. Park, J. Kim, J. Bae, M. Kim
We have recently demonstrated that ideal quantum wire emissions can be achieved in a vertical cavity surface emitting laser (VCSEL)-like structure, where a donut-shape microcavity of three-dimensional Rayleigh's whispering gallery modes is effectively formed in the peripheral region of the active multi-quantum-well (QW) planes of the cylindrical VCSEL so that photonic quantum ring (PQR) emission manifolds naturally emerge due to the quantum corral effect and laser-trapped carrier ordering phenomena. The toroid becomes black (nearly perfect reflection) Rayleigh's gallery of the PQR laser, with anomalous quantum wire properties, such as microampere-range threshold currents and square-root-T dependent redshifts. The anomalous PQR properties are also found to be independent of the VCSEL according to the behaviors of the hollow-type PQR devices without the central VCSEL region.
{"title":"Photonic quantum ring emission of 3D Rayleigh's cavity","authors":"O. Kwon, B. Park, J. Kim, J. Bae, M. Kim","doi":"10.1109/ISLC.2000.882295","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882295","url":null,"abstract":"We have recently demonstrated that ideal quantum wire emissions can be achieved in a vertical cavity surface emitting laser (VCSEL)-like structure, where a donut-shape microcavity of three-dimensional Rayleigh's whispering gallery modes is effectively formed in the peripheral region of the active multi-quantum-well (QW) planes of the cylindrical VCSEL so that photonic quantum ring (PQR) emission manifolds naturally emerge due to the quantum corral effect and laser-trapped carrier ordering phenomena. The toroid becomes black (nearly perfect reflection) Rayleigh's gallery of the PQR laser, with anomalous quantum wire properties, such as microampere-range threshold currents and square-root-T dependent redshifts. The anomalous PQR properties are also found to be independent of the VCSEL according to the behaviors of the hollow-type PQR devices without the central VCSEL region.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128168345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882286
H. Unold, M. Kicherer, Safwat W. Z. Mahmoud, R. Jager, R. Michalzik, K. Ebeling
The fabricated VCSELs with anti-resonant top DBRs exhibit complete single-mode operation up to 3 mW output power even for large oxide aperture diameters up to 11 μm. The far-field can be described well by the Airy function and the corresponding FWHM angle remains below 5.5° with a variation of only 20% from threshold to roll-over. The combination of completely single-mode operation, low series resistance and a very stable low far-field angle make this type of device the emitter of choice for high-speed data transmission.
{"title":"Spatially varied anti-resonant DBR design for large-area single-mode VCSELs","authors":"H. Unold, M. Kicherer, Safwat W. Z. Mahmoud, R. Jager, R. Michalzik, K. Ebeling","doi":"10.1109/ISLC.2000.882286","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882286","url":null,"abstract":"The fabricated VCSELs with anti-resonant top DBRs exhibit complete single-mode operation up to 3 mW output power even for large oxide aperture diameters up to 11 μm. The far-field can be described well by the Airy function and the corresponding FWHM angle remains below 5.5° with a variation of only 20% from threshold to roll-over. The combination of completely single-mode operation, low series resistance and a very stable low far-field angle make this type of device the emitter of choice for high-speed data transmission.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128167509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882260
I. Mito
Recent progress in WDM LDs is summarized. Sophisticated devices such as widely tunable LDs are very much expected to exploit the possibility of WDM systems. On the other hand, simple DFB LD is still regarded as the most established device for practical system use. Further research and development on WDM LDs is required for the continuously upgrading WDM system.
{"title":"Recent progress in WDM laser diodes and integrated light sources","authors":"I. Mito","doi":"10.1109/ISLC.2000.882260","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882260","url":null,"abstract":"Recent progress in WDM LDs is summarized. Sophisticated devices such as widely tunable LDs are very much expected to exploit the possibility of WDM systems. On the other hand, simple DFB LD is still regarded as the most established device for practical system use. Further research and development on WDM LDs is required for the continuously upgrading WDM system.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128478666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882318
P. Smowton, G. Lewis, P. Blood, W. Chow, S. Koch
GaInP quantum well lasers are important for applications such as DVD and photodynamic therapy. The performance of these lasers remains limited by non-radiative and carrier-leakage losses and to design fully optimised devices it is necessary to describe these losses accurately. The paper provides a quantitative analysis of these non-radiative losses through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. We find that, even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves.
{"title":"Extraction of non-radiative and carrier leakage losses in GaInP lasers through comparison of experimental and theoretical optical properties","authors":"P. Smowton, G. Lewis, P. Blood, W. Chow, S. Koch","doi":"10.1109/ISLC.2000.882318","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882318","url":null,"abstract":"GaInP quantum well lasers are important for applications such as DVD and photodynamic therapy. The performance of these lasers remains limited by non-radiative and carrier-leakage losses and to design fully optimised devices it is necessary to describe these losses accurately. The paper provides a quantitative analysis of these non-radiative losses through detailed comparison of experimental gain and spontaneous emission spectra with a verified theoretical model. We find that, even in the absence of carrier leakage, there is a substantial contribution to the room temperature threshold current from non-radiative recombination within the wells themselves.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129643638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882299
T. Tajima, K. Hayashi, D. Maywar, W. Asawamethapant, Y. Nakano
The chirped grating is useful in distributed feedback (DFB) lasers as it removes threshold degeneracy, enhances wavelength tuning range, and reduces spatial hole burning. Moreover, it lowers the input power necessary for optical bistability in DFB laser amplifiers and enlarges the operation wavelength range as well. This optical bistability provides means of all optical flip-flop and wavelength conversion, and therefore is very important for optical networking. For the purpose of the optical bistability, the linearly chirped grating as illustrated is advantageous. However, making such gratings is difficult if the holographic exposure is used. Even with the electron beam exposure, patterning linear chirping is not straightforward as the grating pitch has to be changed typically by several ppm every grating line. One method of controlling the grating pitch beyond the maximum positioning resolution of electron beam writers is to incorporate the ability to change the field size. Gratings with slightly different pitches for WDM laser arrays have been successfully fabricated by this method. However, linearly chirped gratings require even finer controllability. We have therefore introduced the weighted exposure technique into the field size modulation, thus acquiring pitch controllability sufficient to write linear chirped gratings.
{"title":"Fabrication of a bistable distributed feedback laser amplifier with a completely linear chirped grating by electron beam lithography","authors":"T. Tajima, K. Hayashi, D. Maywar, W. Asawamethapant, Y. Nakano","doi":"10.1109/ISLC.2000.882299","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882299","url":null,"abstract":"The chirped grating is useful in distributed feedback (DFB) lasers as it removes threshold degeneracy, enhances wavelength tuning range, and reduces spatial hole burning. Moreover, it lowers the input power necessary for optical bistability in DFB laser amplifiers and enlarges the operation wavelength range as well. This optical bistability provides means of all optical flip-flop and wavelength conversion, and therefore is very important for optical networking. For the purpose of the optical bistability, the linearly chirped grating as illustrated is advantageous. However, making such gratings is difficult if the holographic exposure is used. Even with the electron beam exposure, patterning linear chirping is not straightforward as the grating pitch has to be changed typically by several ppm every grating line. One method of controlling the grating pitch beyond the maximum positioning resolution of electron beam writers is to incorporate the ability to change the field size. Gratings with slightly different pitches for WDM laser arrays have been successfully fabricated by this method. However, linearly chirped gratings require even finer controllability. We have therefore introduced the weighted exposure technique into the field size modulation, thus acquiring pitch controllability sufficient to write linear chirped gratings.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132361428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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