Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882320
R.Q. Yang, J. Bradshaw, J. Bruno, J. Pham, D. Wortman
Interband cascade (IC) lasers that utilize optical transitions between the conduction and valence bands in staircase of Sb-based type-II quantum wells (QWs) represent a new class of mid-infrared (IR) diode lasers. IC lasers reuse injected electrons by taking advantage of the broken gap alignment in Sb-based type-II QWs to form cascade stages, leading to a quantum efficiency greater than the conventional limit of unity, similar to the intersubband quantum cascade (QC) laser. Furthermore, IC laser designs can circumvent the fast phonon scattering loss in intersubband QC lasers and suppress Auger recombination through band-structure engineering, leading to lower threshold currents and more efficient operation. Significant advances in the development of type-II IC lasers (/spl lambda//spl sim/3.9 /spl mu/m) were made recently by us at ARL in terms of record-high differential external quantum efficiency (DEQE) (/spl sim/500%), peak output power (>4 W/facet), peak power conversion (wall-plug) efficiency (/spl sim/7%), and reproducibility. We report our most recent progress in achieving high-performance mid-infrared (/spl sim/3.7 /spl mu/m) type-II IC lasers under continuous-wave conditions.
{"title":"High-performance continuous wave type-II interband cascade lasers","authors":"R.Q. Yang, J. Bradshaw, J. Bruno, J. Pham, D. Wortman","doi":"10.1109/ISLC.2000.882320","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882320","url":null,"abstract":"Interband cascade (IC) lasers that utilize optical transitions between the conduction and valence bands in staircase of Sb-based type-II quantum wells (QWs) represent a new class of mid-infrared (IR) diode lasers. IC lasers reuse injected electrons by taking advantage of the broken gap alignment in Sb-based type-II QWs to form cascade stages, leading to a quantum efficiency greater than the conventional limit of unity, similar to the intersubband quantum cascade (QC) laser. Furthermore, IC laser designs can circumvent the fast phonon scattering loss in intersubband QC lasers and suppress Auger recombination through band-structure engineering, leading to lower threshold currents and more efficient operation. Significant advances in the development of type-II IC lasers (/spl lambda//spl sim/3.9 /spl mu/m) were made recently by us at ARL in terms of record-high differential external quantum efficiency (DEQE) (/spl sim/500%), peak output power (>4 W/facet), peak power conversion (wall-plug) efficiency (/spl sim/7%), and reproducibility. We report our most recent progress in achieving high-performance mid-infrared (/spl sim/3.7 /spl mu/m) type-II IC lasers under continuous-wave conditions.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122229869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882264
N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga
We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.
{"title":"A highly strained (/spl lambda/=1.12 /spl mu/m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization","authors":"N. Nishiyama, M. Arai, S. Shinada, T. Miyamoto, F. Koyama, K. Iga","doi":"10.1109/ISLC.2000.882264","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882264","url":null,"abstract":"We have demonstrated a 1.12 /spl mu/m highly strained GaInAs/GaAs QWs VCSELs grown on a GaAs (311)B substrate. Those wells have the In content of 33% and 2.3% strain. The threshold current is 0.9 mA. These VCSELs also show large polarization stability with OPSR of 25 dB, we can expect these VCSELs can maintain a large OPSR under high-speed operation. We are elongating the wavelength toward 1.3 /spl mu/m and apply the device to high-speed silica-fiber based LANs.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121096013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882327
Y. Hanamaki, T. Takiguchi, T. Kadowaki, T. Tanaka, N. Tomita, Y. Mihashi, E. Omura
We have realized 1.3 /spl mu/m MQW AlGaInAs lasers with 10 Gb/s operation even at high temperature of 85 C. This performance is well suitable for the uncooled high-speed transmission in optical communication systems, especially for gigabit ethernet application.
{"title":"1.3 /spl mu/m AlGaInAs ridge waveguide lasers with uncooled 10 Gb/s operation at 85/spl deg/C","authors":"Y. Hanamaki, T. Takiguchi, T. Kadowaki, T. Tanaka, N. Tomita, Y. Mihashi, E. Omura","doi":"10.1109/ISLC.2000.882327","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882327","url":null,"abstract":"We have realized 1.3 /spl mu/m MQW AlGaInAs lasers with 10 Gb/s operation even at high temperature of 85 C. This performance is well suitable for the uncooled high-speed transmission in optical communication systems, especially for gigabit ethernet application.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114373164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882326
S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel
We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.
{"title":"Edge-emitting microlasers with a single quantum dot active layer","authors":"S. Rennon, K. Avary, F. Klopf, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2000.882326","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882326","url":null,"abstract":"We have realized edge emitting microlasers on a GaInAs-AlGaAs quantum dot laser structure with deeply etched DBR mirrors. Lasers with 40 /spl mu/m cavity length show CW operation at room temperature, exhibiting threshold currents below 4 mA. CW output powers exceed 5 mW for 40 /spl mu/m long lasers emitting from the ground state at 980 nm.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"393 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131768398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882300
Y. Inaba, M. Kito, T. Takizawa, H. Nakayama, M. Ishino, K. Itoh
The effect of threshold carrier density on the spectral linewidth in DFB lasers with high output power has been studied. A narrow spectral-linewidth of 0.3 MHz and the record output power of 180 mW are achieved in 1.55 /spl mu/m DFB lasers with reduced threshold carrier density.
{"title":"Reduced spectral linewidth in high output power DFB lasers","authors":"Y. Inaba, M. Kito, T. Takizawa, H. Nakayama, M. Ishino, K. Itoh","doi":"10.1109/ISLC.2000.882300","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882300","url":null,"abstract":"The effect of threshold carrier density on the spectral linewidth in DFB lasers with high output power has been studied. A narrow spectral-linewidth of 0.3 MHz and the record output power of 180 mW are achieved in 1.55 /spl mu/m DFB lasers with reduced threshold carrier density.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131959174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882263
M. Larson, C. Coldren, S. G. Spruytte, H. E. Petersen, J. Harris
Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 /spl mu/m range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 /spl mu/m emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation.
{"title":"Low threshold current continuous-wave GaInNAs/GaAs VCSELs","authors":"M. Larson, C. Coldren, S. G. Spruytte, H. E. Petersen, J. Harris","doi":"10.1109/ISLC.2000.882263","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882263","url":null,"abstract":"Vertical cavity surface-emitting lasers (VCSELs) emitting near 0.85 /spl mu/m are becoming increasingly important for short-haul optical fiber transmission systems. These devices benefit from highly reflective and thermally conductive all-epitaxial GaAs-based mirrors and efficient transverse confinement through AlAs-oxide dielectric apertures. Extending this commercially-established technology to wavelengths in the 1.3-1.6 /spl mu/m range allows for dramatically increased transmission bandwidth and distance in conventional single- and multi-mode fiber. GaInNAs is a promising active layer material grown on GaAs that can achieve 1.3 /spl mu/m emission, and electrically pulsed broad-area GaInNAs VCSELs have been realized. We demonstrate for the first time low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116968221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882289
M. Miller, M. Grabherr, R. Jager, H. Unold, K. Ebeling
We have fabricated high-power bottom-emitting VCSELs for a wavelength of 990 nm with a record high maximum output power of 0.89 W. Favorable beam characteristics such as a circularly symmetric near-field pattern and low divergence far-field together with high power density of more than 1.1 kW/cm/sup 2/ allow for multimode fiber coupled power of more than 0.5 W. Further improved beam quality can be obtained applying an external reflector for higher order transverse mode filtering.
{"title":"Large-area high-power VCSEL","authors":"M. Miller, M. Grabherr, R. Jager, H. Unold, K. Ebeling","doi":"10.1109/ISLC.2000.882289","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882289","url":null,"abstract":"We have fabricated high-power bottom-emitting VCSELs for a wavelength of 990 nm with a record high maximum output power of 0.89 W. Favorable beam characteristics such as a circularly symmetric near-field pattern and low divergence far-field together with high power density of more than 1.1 kW/cm/sup 2/ allow for multimode fiber coupled power of more than 0.5 W. Further improved beam quality can be obtained applying an external reflector for higher order transverse mode filtering.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122687372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882330
Yang Jing Wen, D. Novak, Hai Feng Liu
We have demonstrated the generation of 56 GHz pulses via mode-locking of a Fabry-Perot laser diode using subharmonic optical injection. This method does not require an intracavity saturable absorber and can also alleviate the requirement for high frequency drive electronics due to repetition rate multiplication. The generated pulse train exhibits low levels of timing jitter, and phase noise, and a large locking range.
{"title":"Generation of a 56 GHz pulse train from a Fabry-Perot semiconductor laser using subharmonic optical injection","authors":"Yang Jing Wen, D. Novak, Hai Feng Liu","doi":"10.1109/ISLC.2000.882330","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882330","url":null,"abstract":"We have demonstrated the generation of 56 GHz pulses via mode-locking of a Fabry-Perot laser diode using subharmonic optical injection. This method does not require an intracavity saturable absorber and can also alleviate the requirement for high frequency drive electronics due to repetition rate multiplication. The generated pulse train exhibits low levels of timing jitter, and phase noise, and a large locking range.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124696557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882284
B. Thedrez, V. Voiriot, S. Hubert, J. Lafragette, L. Roux, F. Grillot, J. Gentner, B. Fernier
A new concept for a DFB MQW monomode laser has been proposed and demonstrated. The new structure combines high SMSR, excellent uniformity, high efficiency and low divergence. Uniform spectral performances have been demonstrated with a SMSR of 44 dB at 3 mW, showing that standard processing techniques can be used to fabricate monomode devices with uniformity performances and a theoretical yield of 100% similar to that of Fabry-Perot lasers. Threshold as low as 14 mA, an efficiency of 0.32 W/A and a divergence of 14°×16° could also be obtained with the proposed principle. These results are very promising and open the way for the fabrication of selection-free monomode lasers for WDM applications with highly competitive performances.
{"title":"New WDM DFB laser structure for facet phase-free uniform performances","authors":"B. Thedrez, V. Voiriot, S. Hubert, J. Lafragette, L. Roux, F. Grillot, J. Gentner, B. Fernier","doi":"10.1109/ISLC.2000.882284","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882284","url":null,"abstract":"A new concept for a DFB MQW monomode laser has been proposed and demonstrated. The new structure combines high SMSR, excellent uniformity, high efficiency and low divergence. Uniform spectral performances have been demonstrated with a SMSR of 44 dB at 3 mW, showing that standard processing techniques can be used to fabricate monomode devices with uniformity performances and a theoretical yield of 100% similar to that of Fabry-Perot lasers. Threshold as low as 14 mA, an efficiency of 0.32 W/A and a divergence of 14°×16° could also be obtained with the proposed principle. These results are very promising and open the way for the fabrication of selection-free monomode lasers for WDM applications with highly competitive performances.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126540373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-25DOI: 10.1109/ISLC.2000.882331
L.A. Jiang, M. Grein, H. Haus, E. Ippen
The noise of a passively mode locked laser diode (MLLD) can be described by five coupled linear differential equations driven by white noise sources. The amplitude noise and timing jitter were measured using nonstandard techniques due to the high rep-rate of our MLLD and compared to with the theory. The intensity fluctuations were about 7% and the pulse-to-pulse timing kicks were 43 fs. These results indicate that suppression of relaxation oscillations will be important for reducing the jitter of MLLDs.
{"title":"Noise of modelocked laser diodes","authors":"L.A. Jiang, M. Grein, H. Haus, E. Ippen","doi":"10.1109/ISLC.2000.882331","DOIUrl":"https://doi.org/10.1109/ISLC.2000.882331","url":null,"abstract":"The noise of a passively mode locked laser diode (MLLD) can be described by five coupled linear differential equations driven by white noise sources. The amplitude noise and timing jitter were measured using nonstandard techniques due to the high rep-rate of our MLLD and compared to with the theory. The intensity fluctuations were about 7% and the pulse-to-pulse timing kicks were 43 fs. These results indicate that suppression of relaxation oscillations will be important for reducing the jitter of MLLDs.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125673105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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