Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6291959
Claudia Wong, G. Branner
The effect of synthesizing High Power Active Microwave devices employing the reflection network concept is examined. This is conducted by employing the fundamental device nonlinearities extracted from a precision active device model. The conclusions yield a, perhaps surprising, result in contrast with a commonly held belief.
{"title":"Harmonic analysis in microwave power active devices","authors":"Claudia Wong, G. Branner","doi":"10.1109/MWSCAS.2012.6291959","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6291959","url":null,"abstract":"The effect of synthesizing High Power Active Microwave devices employing the reflection network concept is examined. This is conducted by employing the fundamental device nonlinearities extracted from a precision active device model. The conclusions yield a, perhaps surprising, result in contrast with a commonly held belief.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132830110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6292139
S. Mahmoud, Heba N. Mohamed
This paper proposes high accuracy modeling approach for photovoltaic (PV) arrays. I-V characteristic of PV cell is described by nonlinear equation that's complicated to be solved by the ordinary mathematical methods. The main theme of this contribution is to use a robust algorithm to solve for all single diode model parameters. This technique uses two adjustment steps depending on comparing modeling results to the experimental data provided by the commercial datasheets. Based on the single-diode model, the parameters are determined in the sense of minimum model error. The proposed model is then validated with experimental data of Solarex MSX60 solar module. The superiority of this technique is proved by computing the absolute errors to have a maximum error as 1.3% of module short circuit current. Finally, the proposed model is used to study the effect of different parameters variations on the PV module.
{"title":"Novel modeling approach for photovoltaic arrays","authors":"S. Mahmoud, Heba N. Mohamed","doi":"10.1109/MWSCAS.2012.6292139","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6292139","url":null,"abstract":"This paper proposes high accuracy modeling approach for photovoltaic (PV) arrays. I-V characteristic of PV cell is described by nonlinear equation that's complicated to be solved by the ordinary mathematical methods. The main theme of this contribution is to use a robust algorithm to solve for all single diode model parameters. This technique uses two adjustment steps depending on comparing modeling results to the experimental data provided by the commercial datasheets. Based on the single-diode model, the parameters are determined in the sense of minimum model error. The proposed model is then validated with experimental data of Solarex MSX60 solar module. The superiority of this technique is proved by computing the absolute errors to have a maximum error as 1.3% of module short circuit current. Finally, the proposed model is used to study the effect of different parameters variations on the PV module.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127424915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6291980
S. Baglio, C. Trigona, B. Andò, F. Maiorca, G. L'Episcopo, A. Beninato
This paper deals with the problem of gathering electrical energy from sources readily available in the environment. In particular we focus on vibrations that are almost ubiquitous and that very often appear as random, weak and low frequency signals. The above listed features may significantly reduce the efficiency of traditional linear resonant and therefore alternative innovative strategies need to be explored. In this paper we present some devices that have been analytically modeled and experimentally verified for tackling this issue. The basic idea is centered on the use of bistable oscillators to realize vibration harvesters that can scavenge energy from broadband, weak, random vibrations: this idea will be expanded here toward some solutions where bistability is obtained by using magnets but also where it descends from purely mechanical devices. A brief review on solutions developed that exploit magnetic and non magnetic strategies for obtaining bistability is presented, finally the issue of MEMS fabrication for the devices conceived will be discussed.
{"title":"Energy Harvesting from weak random vibrations: Bistable strategies and architectures for MEMS devices","authors":"S. Baglio, C. Trigona, B. Andò, F. Maiorca, G. L'Episcopo, A. Beninato","doi":"10.1109/MWSCAS.2012.6291980","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6291980","url":null,"abstract":"This paper deals with the problem of gathering electrical energy from sources readily available in the environment. In particular we focus on vibrations that are almost ubiquitous and that very often appear as random, weak and low frequency signals. The above listed features may significantly reduce the efficiency of traditional linear resonant and therefore alternative innovative strategies need to be explored. In this paper we present some devices that have been analytically modeled and experimentally verified for tackling this issue. The basic idea is centered on the use of bistable oscillators to realize vibration harvesters that can scavenge energy from broadband, weak, random vibrations: this idea will be expanded here toward some solutions where bistability is obtained by using magnets but also where it descends from purely mechanical devices. A brief review on solutions developed that exploit magnetic and non magnetic strategies for obtaining bistability is presented, finally the issue of MEMS fabrication for the devices conceived will be discussed.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"14 2 Suppl 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115627970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6291947
F. Moradi
In this paper, new low-power and low-leakage domino circuit topologies is proposed using asymmetrically-doped FinFET devices. Asymmetric source/drain doping results in unequal currents for positive and negative drain-to-source voltages (VDS). Using the proposed device, leakage current reduces significantly while the performance is improved. The proposed device shows 10 times reduction in leakage current while other characteristics such as DIBL and SS are ameliorated. To show the efficacy of the proposed device, asymmetric FinFET is used in designing high fan-in gates. Furthermore, it will be illustrated how to design a datapath using proposed device that results in improved robustness and power consumption.
{"title":"Datapath design using asymmetrically-doped FinFET","authors":"F. Moradi","doi":"10.1109/MWSCAS.2012.6291947","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6291947","url":null,"abstract":"In this paper, new low-power and low-leakage domino circuit topologies is proposed using asymmetrically-doped FinFET devices. Asymmetric source/drain doping results in unequal currents for positive and negative drain-to-source voltages (VDS). Using the proposed device, leakage current reduces significantly while the performance is improved. The proposed device shows 10 times reduction in leakage current while other characteristics such as DIBL and SS are ameliorated. To show the efficacy of the proposed device, asymmetric FinFET is used in designing high fan-in gates. Furthermore, it will be illustrated how to design a datapath using proposed device that results in improved robustness and power consumption.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123893220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6291955
Nick L. Marcoux, Christopher J. Fisher, Doug White, J. Lachapelle, Tomás Palacios, Omair Saadat, S. Sonkusale
A large-signal model for GaN HEMT devices is presented for use in medium power (1-2 W), S-band PA applications. The emphasis of the model is on quick extraction from standard measurements to facilitate research in this new operating regime for GaN HEMT devices. The entire model is extracted using small-signal S-parameter measurements under a small variety of bias conditions and DC IV characteristics without the need to sacrifice devices in the process. The validity of the model is demonstrated by the design and fabrication of both a class AB PA (achieving P1dB = 30.7 dBm and PAE = 64%) and class E PA (achieving max PAE = 64.4% at P0= 30.1 dBm) based on the model described.
{"title":"A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers","authors":"Nick L. Marcoux, Christopher J. Fisher, Doug White, J. Lachapelle, Tomás Palacios, Omair Saadat, S. Sonkusale","doi":"10.1109/MWSCAS.2012.6291955","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6291955","url":null,"abstract":"A large-signal model for GaN HEMT devices is presented for use in medium power (1-2 W), S-band PA applications. The emphasis of the model is on quick extraction from standard measurements to facilitate research in this new operating regime for GaN HEMT devices. The entire model is extracted using small-signal S-parameter measurements under a small variety of bias conditions and DC IV characteristics without the need to sacrifice devices in the process. The validity of the model is demonstrated by the design and fabrication of both a class AB PA (achieving P1dB = 30.7 dBm and PAE = 64%) and class E PA (achieving max PAE = 64.4% at P0= 30.1 dBm) based on the model described.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124167111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6291999
Harish Valapala, P. Furth
We introduce two extremely low quiescent current (IQ) low-dropout (LDO) voltage regulators. The Low IQ-LDO (LIQ-LDO) has a minimum ground current of 13 μA and is designed for a maximum load current of 50 mA. The Micro IQ-LDO (MIQ-LDO) has a minimum ground current of 1.2 μA and is designed for a maximum load current of 5 mA. Detailed pole/zero analysis is performed to aid in the design of the LDOs. Two LHP zeros cancel the two non-dominant poles which extend the bandwidth and improve transient response. Both designs are fully integrated, stabilized with an on-chip capacitive load of 100 pF. A process-independent figure of merit (FOM) is proposed to compare LIQ-LDO and MIQ-LDO with other published work.
{"title":"Analysis and design of fully integrated very low quiescent current LDOs","authors":"Harish Valapala, P. Furth","doi":"10.1109/MWSCAS.2012.6291999","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6291999","url":null,"abstract":"We introduce two extremely low quiescent current (I<sub>Q</sub>) low-dropout (LDO) voltage regulators. The Low I<sub>Q</sub>-LDO (LI<sub>Q</sub>-LDO) has a minimum ground current of 13 μA and is designed for a maximum load current of 50 mA. The Micro I<sub>Q</sub>-LDO (MI<sub>Q</sub>-LDO) has a minimum ground current of 1.2 μA and is designed for a maximum load current of 5 mA. Detailed pole/zero analysis is performed to aid in the design of the LDOs. Two LHP zeros cancel the two non-dominant poles which extend the bandwidth and improve transient response. Both designs are fully integrated, stabilized with an on-chip capacitive load of 100 pF. A process-independent figure of merit (FOM) is proposed to compare LI<sub>Q</sub>-LDO and MI<sub>Q</sub>-LDO with other published work.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114682334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6292065
A. Bandi, M. Rizkalla, P. Salama
Acoustic detection of gunshots has many applications in the field of security and military. This paper deals with the detection of gunshots, using microphone sensor arrays placed in different locations which are processed using MATLAB. The time difference of arrivals of acoustic signals at different sensors is used to determine the direction of arrival, elevation and the location of the shooter. The aim of the project is to develop a high speed, low power sensor array which can be used for both military and civilian safety along with efficient network security. A mathematical model will be developed and five microphone system will be used in localizing the gunshot.
{"title":"A novel approach for the detection of gunshot events using sound source localization techniques","authors":"A. Bandi, M. Rizkalla, P. Salama","doi":"10.1109/MWSCAS.2012.6292065","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6292065","url":null,"abstract":"Acoustic detection of gunshots has many applications in the field of security and military. This paper deals with the detection of gunshots, using microphone sensor arrays placed in different locations which are processed using MATLAB. The time difference of arrivals of acoustic signals at different sensors is used to determine the direction of arrival, elevation and the location of the shooter. The aim of the project is to develop a high speed, low power sensor array which can be used for both military and civilian safety along with efficient network security. A mathematical model will be developed and five microphone system will be used in localizing the gunshot.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117349530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6292013
S. Erfani, M. Ahmadi, N. Bayan
The objective of the present paper is to give a summary of the theory of the bifrequency analysis for the class of linear time-varying (LTV) systems. The emphasis is on the frequency characterization of dynamic systems using the classical two-dimensional Laplace transform (2DLT). The merit of this powerful technique, which has not sufficiently been explored, is illustrated by examples.
{"title":"Bifrequency characterization of linear time-varying systems: A tutorial with examples","authors":"S. Erfani, M. Ahmadi, N. Bayan","doi":"10.1109/MWSCAS.2012.6292013","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6292013","url":null,"abstract":"The objective of the present paper is to give a summary of the theory of the bifrequency analysis for the class of linear time-varying (LTV) systems. The emphasis is on the frequency characterization of dynamic systems using the classical two-dimensional Laplace transform (2DLT). The merit of this powerful technique, which has not sufficiently been explored, is illustrated by examples.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124703385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6292187
Y. Chang, Wen-Hao Chung
This paper presents a fast fractional motion estimation (FME) and the associated VLSI architecture for H.264/AVC multiview video coding. The proposed FME automatically turns off the mode P8×8 by exploiting the results of integer motion estimation and similarity between views. In addition, the fraction-pel refinement of integer motion or disparity vector in any partition may be skipped according to the difference of their rate-distortion cost. This algorithm accelerates the FME by nearly 50% with negligible PSNR degradation and bitrate increase. The resultant FME can process a macroblock within 612 clock cycles, enough to achieve real-time coding for the stereoscopic HD1080p video sequences operating at frequency of 300 MHz.
{"title":"A fast fractional motion estimation algorithm and architecture for H.264/AVC multiview video coding","authors":"Y. Chang, Wen-Hao Chung","doi":"10.1109/MWSCAS.2012.6292187","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6292187","url":null,"abstract":"This paper presents a fast fractional motion estimation (FME) and the associated VLSI architecture for H.264/AVC multiview video coding. The proposed FME automatically turns off the mode P8×8 by exploiting the results of integer motion estimation and similarity between views. In addition, the fraction-pel refinement of integer motion or disparity vector in any partition may be skipped according to the difference of their rate-distortion cost. This algorithm accelerates the FME by nearly 50% with negligible PSNR degradation and bitrate increase. The resultant FME can process a macroblock within 612 clock cycles, enough to achieve real-time coding for the stereoscopic HD1080p video sequences operating at frequency of 300 MHz.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129663596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-09-05DOI: 10.1109/MWSCAS.2012.6292106
I. Filanovsky
The paper gives a critical analysis of recently proposed cut-insertion theorem. It is shown that all cut-insertion equivalent networks can be obtained using a simple extension of the substitution theorem. For example, using two voltage sources connected in parallel between a chosen and reference node, then cutting the wire between the voltage sources one concludes that a wire with a known voltage and known current can be substituted by a two port where one input is connected to the impedance seen by the voltage source operating at the second port. The calculation of this impedance is difficult; in the general case one have to solve an algebraic equation of the fifth degree. Hence, when the network with cut-inserted two-port is represented as a feedback system the parameters of this system may be defined for very simple networks only, when the degree of the defining equation is lessened. An example shows these difficulties.
{"title":"Critical analysis of cut-insertion theorem","authors":"I. Filanovsky","doi":"10.1109/MWSCAS.2012.6292106","DOIUrl":"https://doi.org/10.1109/MWSCAS.2012.6292106","url":null,"abstract":"The paper gives a critical analysis of recently proposed cut-insertion theorem. It is shown that all cut-insertion equivalent networks can be obtained using a simple extension of the substitution theorem. For example, using two voltage sources connected in parallel between a chosen and reference node, then cutting the wire between the voltage sources one concludes that a wire with a known voltage and known current can be substituted by a two port where one input is connected to the impedance seen by the voltage source operating at the second port. The calculation of this impedance is difficult; in the general case one have to solve an algebraic equation of the fifth degree. Hence, when the network with cut-inserted two-port is represented as a feedback system the parameters of this system may be defined for very simple networks only, when the degree of the defining equation is lessened. An example shows these difficulties.","PeriodicalId":324891,"journal":{"name":"2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129827833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：