Pub Date : 2003-09-01DOI: 10.1142/S1465876303002003
T. Truong, N. Nguyen
Conventional SU-8 lithography process for fabricating microfluidic devices ofthe uses silicon or glass as wafer materials. Since silicon and glass are hard and brittle, drilling fluid access holes or dicing the wafers into individual devies are difficult. We investigated the use of polymethylmethacrylate (PMMA) as a new wafer material. PMMA, an amorphous thermoplastic, was chosen for being easy to drill or cut, biocompatible, transparent, and much cheaper than silicon or glass wafers. Moreover, is thermal expansion coefficient ideally matches that of SU-8. PMMA poorly resists solvents, and has low glass transition temperature (105°C). Thus, the conventional process needed to be modified. The wafer was only cleaned with isopropyl alcohol and deionized water. The baking temperature was lowered to 90°C. In addition, a "base layer" of SU-8, helping to achieve a high quality structural pattern, was coated before coating the actual structural SU-8 layer. A Tesla valve, a non-moving part microfluidic valve, was successfully fabricated in SU-8 using thr presented process,. However, the PMMA wafer bowed ue to the thermal residual during baking steps. Despite the bowing which can be solved by increasing wafer thickness, we conclude that PMMA is a promising wafer material for a SU-8 process.
{"title":"SU-8 On Pmma - A New Technology For Microfluidics","authors":"T. Truong, N. Nguyen","doi":"10.1142/S1465876303002003","DOIUrl":"https://doi.org/10.1142/S1465876303002003","url":null,"abstract":"Conventional SU-8 lithography process for fabricating microfluidic devices ofthe uses silicon or glass as wafer materials. Since silicon and glass are hard and brittle, drilling fluid access holes or dicing the wafers into individual devies are difficult. We investigated the use of polymethylmethacrylate (PMMA) as a new wafer material. PMMA, an amorphous thermoplastic, was chosen for being easy to drill or cut, biocompatible, transparent, and much cheaper than silicon or glass wafers. Moreover, is thermal expansion coefficient ideally matches that of SU-8. PMMA poorly resists solvents, and has low glass transition temperature (105°C). Thus, the conventional process needed to be modified. The wafer was only cleaned with isopropyl alcohol and deionized water. The baking temperature was lowered to 90°C. In addition, a \"base layer\" of SU-8, helping to achieve a high quality structural pattern, was coated before coating the actual structural SU-8 layer. A Tesla valve, a non-moving part microfluidic valve, was successfully fabricated in SU-8 using thr presented process,. However, the PMMA wafer bowed ue to the thermal residual during baking steps. Despite the bowing which can be solved by increasing wafer thickness, we conclude that PMMA is a promising wafer material for a SU-8 process.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129839537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303002027
S. Pati, C. Venkatesh, N. Bhat, R. Pratap
In this work , a tunable resonator is designed. Using the voltage actuators, the fundamental resonance frequency of the resonator is varied. The voltage applied to the tuning combs results in change in the stiffness of the folded beam suspension, which in turn changes resonant frequency. The resonator is modeled in circuit simulator using voltage controlled current sources. The effect of change in stiffness (kc) is included to model tunable resonator. A voltage-controlled oscillator is designed using the tunable resonator.
{"title":"Voltage Controlled Oscillator Using Tunable Mems Resonator","authors":"S. Pati, C. Venkatesh, N. Bhat, R. Pratap","doi":"10.1142/S1465876303002027","DOIUrl":"https://doi.org/10.1142/S1465876303002027","url":null,"abstract":"In this work , a tunable resonator is designed. Using the voltage actuators, the fundamental resonance frequency of the resonator is varied. The voltage applied to the tuning combs results in change in the stiffness of the folded beam suspension, which in turn changes resonant frequency. The resonator is modeled in circuit simulator using voltage controlled current sources. The effect of change in stiffness (kc) is included to model tunable resonator. A voltage-controlled oscillator is designed using the tunable resonator.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117183260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001988
V. Srivastava, R. Chatterjee, T. C. Goel
Ni2MnAl Heusler alloy is one of the promising materials for the shape memory effect. It has been reported in literature that the magnetic shape effect is observed only when this alloy is in L21phase. The appropriate processing parameters to achieve this phase in this alloy, is the subject of our study in this report. The results of our investigations of the structural and magnetic property changes at various stages of processing are reported here. Differential Scanning Calorimeter and dc magnetization measurements have been used to probe structural and magnetic phase transformation of the material after the heat treatment. The structural analysis has been carried out by X-ray diffraction mehod.
{"title":"Structural And Magnetic Property Of Aged Ni2mnal Heusler Alloys","authors":"V. Srivastava, R. Chatterjee, T. C. Goel","doi":"10.1142/S1465876303001988","DOIUrl":"https://doi.org/10.1142/S1465876303001988","url":null,"abstract":"Ni2MnAl Heusler alloy is one of the promising materials for the shape memory effect. It has been reported in literature that the magnetic shape effect is observed only when this alloy is in L21phase. The appropriate processing parameters to achieve this phase in this alloy, is the subject of our study in this report. The results of our investigations of the structural and magnetic property changes at various stages of processing are reported here. Differential Scanning Calorimeter and dc magnetization measurements have been used to probe structural and magnetic phase transformation of the material after the heat treatment. The structural analysis has been carried out by X-ray diffraction mehod.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132155948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S146587630300168X
Z. Ling, K. Lian, Jian Zhang
The concentration of photoacidgenerator (PAG) in SU-8 determines the UV absorption and, therefore, is a limiting factor of the applicable SU-8 thickness. The motivation of this work is to improve SU-8 process control and expand the application scope of SU-8 by modifying its PAG concentration. In this paper we present the experimental results on lithographic properties of SU-8 as the function of PAG concentration (varying up to 2 orders of magnitude). It includes determining the minimum bottom dose and minimum effective energy density for x-ray and UV lithography of SU-8, respectively, and the UV absorption spectra of SU-8. It is fund that as the PAG concentration reduced, SU-8 has lower sensitivities in UV and x-ray lithography, and lower UV absorption coefficients. By using PAG diluted SU-8 taller microstructures with vertical sidewall can be obtained with UV lithography. Based on the large difference in lithographic sensitivities between normal and PAG diluted SU-8, we have developed a new process conce...
{"title":"Characterization And Application Of Pag Diluted SU-8","authors":"Z. Ling, K. Lian, Jian Zhang","doi":"10.1142/S146587630300168X","DOIUrl":"https://doi.org/10.1142/S146587630300168X","url":null,"abstract":"The concentration of photoacidgenerator (PAG) in SU-8 determines the UV absorption and, therefore, is a limiting factor of the applicable SU-8 thickness. The motivation of this work is to improve SU-8 process control and expand the application scope of SU-8 by modifying its PAG concentration. In this paper we present the experimental results on lithographic properties of SU-8 as the function of PAG concentration (varying up to 2 orders of magnitude). It includes determining the minimum bottom dose and minimum effective energy density for x-ray and UV lithography of SU-8, respectively, and the UV absorption spectra of SU-8. It is fund that as the PAG concentration reduced, SU-8 has lower sensitivities in UV and x-ray lithography, and lower UV absorption coefficients. By using PAG diluted SU-8 taller microstructures with vertical sidewall can be obtained with UV lithography. Based on the large difference in lithographic sensitivities between normal and PAG diluted SU-8, we have developed a new process conce...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131197773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001848
Mechtilde Schäfer, Matthias Walz, R. Stein, Lars Vollmer, Günther Schuster, A. Foitzik
So far the verification of specific bacteria is time consuming and costly. The reason is the neccessity for highly specialised laboratory equipment and the requirements regarding clean-room facilities ensuring environments free of any germs. Additionally growing bacteria in equivalent petri dishes may require quite some time until a reasonable number is grown sufficient for further evaluation. For many bacteria and even viruses alternative processes for multiplication have been developed, basically relying on the so called Polymerase Chain Reaction (PCR). We developed the Goeppingen GeneReactor, a microsized system (MEMS) for PCR as a low cost device, that can be used without any clean-room facilities, while additionally a device for electrophoresis is added as a tool for analysis. Thus this system can be used as a throw analysis tool, i.e. specimen containig the required bacteria or viruses could be preparated and investigated in every physician's pratice. It should be noted, that even tiny amounts of st...
{"title":"The Goeppingen Genereactor For Dna-Analysis","authors":"Mechtilde Schäfer, Matthias Walz, R. Stein, Lars Vollmer, Günther Schuster, A. Foitzik","doi":"10.1142/S1465876303001848","DOIUrl":"https://doi.org/10.1142/S1465876303001848","url":null,"abstract":"So far the verification of specific bacteria is time consuming and costly. The reason is the neccessity for highly specialised laboratory equipment and the requirements regarding clean-room facilities ensuring environments free of any germs. Additionally growing bacteria in equivalent petri dishes may require quite some time until a reasonable number is grown sufficient for further evaluation. For many bacteria and even viruses alternative processes for multiplication have been developed, basically relying on the so called Polymerase Chain Reaction (PCR). We developed the Goeppingen GeneReactor, a microsized system (MEMS) for PCR as a low cost device, that can be used without any clean-room facilities, while additionally a device for electrophoresis is added as a tool for analysis. Thus this system can be used as a throw analysis tool, i.e. specimen containig the required bacteria or viruses could be preparated and investigated in every physician's pratice. It should be noted, that even tiny amounts of st...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122116393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303002167
Z. Zhong, K. Chan, Y. H. Chen
This paper discusses the effects of electro-deposition processing conditions on the film composition and surface morphology. The rate of Ag deposition onto the bump depends on various processing parameters like current density, agitation and temperature. Among these parameters, the Ag content in the bump was found to be most sesitive to current plating density. At various Ag content, the morphology of the deposited solder was found to be different. This is due to the different types of drain growth at different Ag content. A high content bump was found with a needle-like Ag3Sn structure. This strcuture is believed to be the cause for the reduction in shear strength.
{"title":"Characterisation Of Electroplated Eutectic Sn-Ag Solder","authors":"Z. Zhong, K. Chan, Y. H. Chen","doi":"10.1142/S1465876303002167","DOIUrl":"https://doi.org/10.1142/S1465876303002167","url":null,"abstract":"This paper discusses the effects of electro-deposition processing conditions on the film composition and surface morphology. The rate of Ag deposition onto the bump depends on various processing parameters like current density, agitation and temperature. Among these parameters, the Ag content in the bump was found to be most sesitive to current plating density. At various Ag content, the morphology of the deposited solder was found to be different. This is due to the different types of drain growth at different Ag content. A high content bump was found with a needle-like Ag3Sn structure. This strcuture is believed to be the cause for the reduction in shear strength.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"08 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125577794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S146587630300154X
J. Baborowski, N. Ledermann, P. Muralt, D. Schmitt
Piezoelectric micromachined ultrasonic transducers for airborne and immersed applications in the frequencies from 20 kHz in liquid up to 750kHz in air have been simulated by finite element approach, fabricated and investigated. The basic element consisted of a oxidized and platinized silicon membrane coated with a 2 μm thick (100)-textured Pb(Zr,Ti)O3 (PZT) thin film deposited by sol-gel techniques. SOI wafers have been applied to obtain a good definition of the silicon part of the membrane. The unclamping of the silicon membrane at the border increases drastically the coupling factor. For unclamped structures the membranes completely covered with top electrode show the highest coupling coefficient (k2 = 5.6%). Immersed (in FluorinertTM) membranes show 7 times smaller quality factor, while the coupling factor k2 remains the same. The obtained structures were enough sensitive to detect acoustic waves in air and in liquid emitted from the same type of elements at a distance of few centimeters. Good agreemen...
{"title":"Simulation And Characterization Of Piezoelectric Micromachined Ultrasonic Transducers (pMUTs) Based On Pzt/Soi Membranes","authors":"J. Baborowski, N. Ledermann, P. Muralt, D. Schmitt","doi":"10.1142/S146587630300154X","DOIUrl":"https://doi.org/10.1142/S146587630300154X","url":null,"abstract":"Piezoelectric micromachined ultrasonic transducers for airborne and immersed applications in the frequencies from 20 kHz in liquid up to 750kHz in air have been simulated by finite element approach, fabricated and investigated. The basic element consisted of a oxidized and platinized silicon membrane coated with a 2 μm thick (100)-textured Pb(Zr,Ti)O3 (PZT) thin film deposited by sol-gel techniques. SOI wafers have been applied to obtain a good definition of the silicon part of the membrane. The unclamping of the silicon membrane at the border increases drastically the coupling factor. For unclamped structures the membranes completely covered with top electrode show the highest coupling coefficient (k2 = 5.6%). Immersed (in FluorinertTM) membranes show 7 times smaller quality factor, while the coupling factor k2 remains the same. The obtained structures were enough sensitive to detect acoustic waves in air and in liquid emitted from the same type of elements at a distance of few centimeters. Good agreemen...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125469642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001617
Jianxia Gao, M. Chan-Park, D. Xie, B. Ngoi, C. Yue
Titanium nitride (TiN) thin films have low electrical resistivity, good chemical and metallurgical stability, and exceptional mechanical properties. As such, we are interested in exploring TiN for use as mold material for micro-and nano replication. Focused ion beam (FIB) technique was successfully used to fabricate sub-micron sized pattern on a TiN/Si(100) wafer. This mask-free fabrication technique takes advantage of the kinetic precision of FIB; the energy of ions used was 40 KeV. The width and depth of each trench in the TiN mold are 390 nm and 280 nm respectively.
{"title":"Sub-Micron Patterning Titanium Nitride By Focused Ion-Beam Technique","authors":"Jianxia Gao, M. Chan-Park, D. Xie, B. Ngoi, C. Yue","doi":"10.1142/S1465876303001617","DOIUrl":"https://doi.org/10.1142/S1465876303001617","url":null,"abstract":"Titanium nitride (TiN) thin films have low electrical resistivity, good chemical and metallurgical stability, and exceptional mechanical properties. As such, we are interested in exploring TiN for use as mold material for micro-and nano replication. Focused ion beam (FIB) technique was successfully used to fabricate sub-micron sized pattern on a TiN/Si(100) wafer. This mask-free fabrication technique takes advantage of the kinetic precision of FIB; the energy of ions used was 40 KeV. The width and depth of each trench in the TiN mold are 390 nm and 280 nm respectively.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115642036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001952
A. Palaniappan, J. Zhang, X. Su, F. Tay
Electrical impedance analysis and energy dissipation methods are the two main methods to evaluate the damping behaviour of the quartz crystal. The motional resistance of the quartz crystal, which can reflect the quality factor (Q), is monitored in the electrical impedance analysis and the dissipation factor (D), which is inversely proportional to the Q, is measured in the energy dissipation methods. A comparison of the Q from electrical impedance analysis, termed as "electrical Q" and from the energy dissipation methods, termed as "mechanical Q" is presented in this work. The damping behavior of 5 MHz QCMs subjected to polymer caotings are studied by both methods. The resonant frequency, f, and Q before and after polymer coatings are measured using the network analyzer and a QCM-energy dissipation (QCM-D) instrument. The frequency shifts from both methods are quite comparable and the changes of the dissipation factor and the Q factor are also similar. Possible factors accounting for the Q change such as m...
{"title":"Electrical Impedance And Energy Dissipation Analyses Of Quartz Crystal Microbalance For Polymer Coating","authors":"A. Palaniappan, J. Zhang, X. Su, F. Tay","doi":"10.1142/S1465876303001952","DOIUrl":"https://doi.org/10.1142/S1465876303001952","url":null,"abstract":"Electrical impedance analysis and energy dissipation methods are the two main methods to evaluate the damping behaviour of the quartz crystal. The motional resistance of the quartz crystal, which can reflect the quality factor (Q), is monitored in the electrical impedance analysis and the dissipation factor (D), which is inversely proportional to the Q, is measured in the energy dissipation methods. A comparison of the Q from electrical impedance analysis, termed as \"electrical Q\" and from the energy dissipation methods, termed as \"mechanical Q\" is presented in this work. The damping behavior of 5 MHz QCMs subjected to polymer caotings are studied by both methods. The resonant frequency, f, and Q before and after polymer coatings are measured using the network analyzer and a QCM-energy dissipation (QCM-D) instrument. The frequency shifts from both methods are quite comparable and the changes of the dissipation factor and the Q factor are also similar. Possible factors accounting for the Q change such as m...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126659559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303002118
S. Myllymaki, E. Ristolainen, P. Heino, A. Lehto, K. Varjonen
A new type of oscillating transistor structure has been developed in thin film SOI applications.The oscillator's mechanical resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it possible to add this resonator in same structure without complex process steps. The oscillating transistor can be used primarily in low frequencies (MHz). The component has one electrostatically driven electrode and two electrodes for drain and source parts. By using this component, the transistor can be driven electrostatically. It can have higher voltage current aplification -ratio than conventional transistor because of mechanic impact. For filter solutions coupling rods are not needed. The structure have been measured Q-value of 700 at 3,3MHz in normal room conditions
{"title":"Evaluation Of Resonating Channel Transistor In SOI Wafer","authors":"S. Myllymaki, E. Ristolainen, P. Heino, A. Lehto, K. Varjonen","doi":"10.1142/S1465876303002118","DOIUrl":"https://doi.org/10.1142/S1465876303002118","url":null,"abstract":"A new type of oscillating transistor structure has been developed in thin film SOI applications.The oscillator's mechanical resonator has circular shape and vertical vibration. By using conventional SOI chips with other electronics it possible to add this resonator in same structure without complex process steps. The oscillating transistor can be used primarily in low frequencies (MHz). The component has one electrostatically driven electrode and two electrodes for drain and source parts. By using this component, the transistor can be driven electrostatically. It can have higher voltage current aplification -ratio than conventional transistor because of mechanic impact. For filter solutions coupling rods are not needed. The structure have been measured Q-value of 700 at 3,3MHz in normal room conditions","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131614995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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