Pub Date : 2003-09-01DOI: 10.1142/S1465876303001721
N. Jiang, Rajnish Sharma, H. Feng, Zhe Wang, Xiaowei Wang
AlN thin films were grown on Si(100) and Al/Si(100) substrates by pulsed dc sputtering system using 99.999% purity aluminum as target, and Ar+N2 gas mixture as precursor. The impact of deposition parameters on material properties has been investigated has been investigated. A good correlation between film crytallinity and dc power, as well as gas pressure, was addressed by x-ray diffraction, and verified by scanning electron microscope (SEM). It is found that highly c-axis oriented h-AlN can be obtained at low gas pressure and low deposition rate. For AlN on Al/Si(100) substrate, micro-crack was observed, which was assigned to the large thermal stress between AlN film and Al layer. Crack-free surface has been achieved by reducing the deposition temperature. The deposition mechanism of AlN deposition is discussed.
{"title":"Impact Of Deposition Parameters On The Characterizations Of Highly Orientated Aluminum Nitride For Film Bulk Acoustic Resonator Device","authors":"N. Jiang, Rajnish Sharma, H. Feng, Zhe Wang, Xiaowei Wang","doi":"10.1142/S1465876303001721","DOIUrl":"https://doi.org/10.1142/S1465876303001721","url":null,"abstract":"AlN thin films were grown on Si(100) and Al/Si(100) substrates by pulsed dc sputtering system using 99.999% purity aluminum as target, and Ar+N2 gas mixture as precursor. The impact of deposition parameters on material properties has been investigated has been investigated. A good correlation between film crytallinity and dc power, as well as gas pressure, was addressed by x-ray diffraction, and verified by scanning electron microscope (SEM). It is found that highly c-axis oriented h-AlN can be obtained at low gas pressure and low deposition rate. For AlN on Al/Si(100) substrate, micro-crack was observed, which was assigned to the large thermal stress between AlN film and Al layer. Crack-free surface has been achieved by reducing the deposition temperature. The deposition mechanism of AlN deposition is discussed.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117044449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001599
D. Cho, H. Ko, Jongpal Kim, Sangjun Park, D. Kwak, Taeyong Song, W. Carr, James Bus
This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the Extended Sacrificial Bulk Micromachining (ESBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one masks. The fabricated accelerometer has the structure thickness of 40 μm, the vertical offset of 15 μm, and lateral gap between electrodes of 4 μm. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be 500 μg and 748 μg. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18 % FSO, respectively. The measured bandwidth is more than 100 Hz.
{"title":"A Novel Z-Axis Accelerometer With Perfectly-Aligned, Fully-Offset Vertical Combs Fabricated Using The Extended Sacrificial Bulk Micromachining Process","authors":"D. Cho, H. Ko, Jongpal Kim, Sangjun Park, D. Kwak, Taeyong Song, W. Carr, James Bus","doi":"10.1142/S1465876303001599","DOIUrl":"https://doi.org/10.1142/S1465876303001599","url":null,"abstract":"This paper presents a novel z-axis accelerometer with perfectly aligned vertical combs fabricated using the Extended Sacrificial Bulk Micromachining (ESBM) process. The z-axis accelerometer is fabricated using only one (111) SOI wafer and two photo masks without wafer bonding or CMP processes as used by other research efforts that involve vertical combs. In our process, there is no misalignment in lateral gap between the upper and lower comb electrodes, because all critical dimensions including lateral gaps are defined using only one masks. The fabricated accelerometer has the structure thickness of 40 μm, the vertical offset of 15 μm, and lateral gap between electrodes of 4 μm. Torsional springs and asymmetric proof mass produce a vertical displacement when an external z-axis acceleration is applied, and capacitance change due to the vertical displacement of the comb is detected by charge-to-voltage converter. The signal-to-noise ratio of the modulated and demodulated output signal is 80 dB and 76.5 dB, respectively. The noise equivalent input acceleration resolution of the modulated and demodulated output signal is calculated to be 500 μg and 748 μg. The scale factor and linearity of the accelerometer are measured to be 1.1 mV/g and 1.18 % FSO, respectively. The measured bandwidth is more than 100 Hz.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"96 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115984850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S146587630300212X
Y. Chen, S. Janak, S. Uppili
Micromachined glass capillary with a widely application in biological, pharmaceutical and chemical sample treatment and analysis. It also plays an important role in the microfluidic devices. A novel microfabrication method to form a glass capillary is presented here, in which glass channel wafer need to be anodicly bonded with a SiO2 surface of the silicon wafer and the silicon TMAH (Tetra-methyl-ammonium-hydroxide) wet ecthing process is followed. This method requests a lower bonding temperature comparing with conventional glass to glass fusion bonding approach and show an advantage.
{"title":"A Fabrication Method To Form Glass Capillary","authors":"Y. Chen, S. Janak, S. Uppili","doi":"10.1142/S146587630300212X","DOIUrl":"https://doi.org/10.1142/S146587630300212X","url":null,"abstract":"Micromachined glass capillary with a widely application in biological, pharmaceutical and chemical sample treatment and analysis. It also plays an important role in the microfluidic devices. A novel microfabrication method to form a glass capillary is presented here, in which glass channel wafer need to be anodicly bonded with a SiO2 surface of the silicon wafer and the silicon TMAH (Tetra-methyl-ammonium-hydroxide) wet ecthing process is followed. This method requests a lower bonding temperature comparing with conventional glass to glass fusion bonding approach and show an advantage.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"371 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126710716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001782
J.-M. Huang, A. Liu
The objective of the paper presented here is to develop and demonstrate a MEMS silicon-based tunable capacitor for RF communications application. The tunable capacitor is made of single crystal silicon based on silicon-on-insulator (SOI) technology, and that has a continuous tuning range in excess of 300%. The electrical capacitance model will be provided here in details to demonstrate tuning characteristic and RF performance of tunable capacitor.
{"title":"Tunable Microelectromechanical Capacitor With Wide Tuning Ranges","authors":"J.-M. Huang, A. Liu","doi":"10.1142/S1465876303001782","DOIUrl":"https://doi.org/10.1142/S1465876303001782","url":null,"abstract":"The objective of the paper presented here is to develop and demonstrate a MEMS silicon-based tunable capacitor for RF communications application. The tunable capacitor is made of single crystal silicon based on silicon-on-insulator (SOI) technology, and that has a continuous tuning range in excess of 300%. The electrical capacitance model will be provided here in details to demonstrate tuning characteristic and RF performance of tunable capacitor.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"122 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131042106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001770
J.-M. Huang, A. Liu, X. Zhang, J. Ahn
A general theoretical model using the coupling effect between the torsion and bending is presented in this paper, and which characterizes the static properties of the electrostatic torsional micromirror, especially its pull-in effect. The pull-in effect is investigated specifically to predict pull-in voltage, pull-in angle, and pull-in displacement, which highly depend on the electrode size and position, and ratio of the bending and torsion effect of the torsion beam. The ratio of the bending and torsion effect plays a key role in the pull-in phenomena. It also determines the instability mode of torsional micromirrors dominated by either the torsion or bending effect. Then, a group of torsional micromirrors is fabricated using three-layer-polysilicon micromachining process and measured using an optical projection method to verify the static actuation relation and pull-in-effect respectively. The experimental data are processed analyzed, and the theoretical analysis is in good agreement with the experimental results.
{"title":"A Novel Lumped Two Degrees Of Freedom Pull-In Approach To Electrostatic Torsional Micromirrors","authors":"J.-M. Huang, A. Liu, X. Zhang, J. Ahn","doi":"10.1142/S1465876303001770","DOIUrl":"https://doi.org/10.1142/S1465876303001770","url":null,"abstract":"A general theoretical model using the coupling effect between the torsion and bending is presented in this paper, and which characterizes the static properties of the electrostatic torsional micromirror, especially its pull-in effect. The pull-in effect is investigated specifically to predict pull-in voltage, pull-in angle, and pull-in displacement, which highly depend on the electrode size and position, and ratio of the bending and torsion effect of the torsion beam. The ratio of the bending and torsion effect plays a key role in the pull-in phenomena. It also determines the instability mode of torsional micromirrors dominated by either the torsion or bending effect. Then, a group of torsional micromirrors is fabricated using three-layer-polysilicon micromachining process and measured using an optical projection method to verify the static actuation relation and pull-in-effect respectively. The experimental data are processed analyzed, and the theoretical analysis is in good agreement with the experimental results.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121431473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001733
Jian-Jun Yuan, Shi-Yuan Cheng, Lei Jiang, Lin-Xian Feng, Zhi-Qiang Fan
The self-assembled nanostructured aggregates with various morphologies, including spherical micelles, worm-like micelles, vesicles and lamellae, have benn observed from the BAB triblock copolymers in water. Here, the polymers used are Polystyrene(PS)43-b-Poly(ethylene oxide)(PEO)45-b-PS43 copolymer with Mw/Mn = 1.48 prepared by ATRP and PS39-b-Poly(4-vinylpyridine)(P4VP)98-b-PS39 copolymer with Mw/Mn = 1.15 synthesized by RAFT. The size and shape of the aggregates are controllable according to some tunable parameters of systems, which affect the balance between three of the major forces acting on the system. These include the stretching of the core-forming blocks, the intercoronal interactions, and the interfacial energy between the solvent and the micellar core. The multiple morphologies were obtained by altering the solvents, solvent composition, copolymers, pH, concentrations, and so on. In addition, the second aggregation behavior of spherical micelles, spherical vesicles, and worm-like micelles was interestedly concerned. It was found that the second aggregation behavior the different complexity for different primary aggregates. For symmetrical primary aggregates, such as spherical micelles and vesicles, the second aggregates appeared symmetrically spherical. In contrast, for unsymmetrical worm-like primary micelles, the second aggregation tended to have unsymmetrical shape. The BAB chain architecture was molecularly suggested to be responsible for the second aggregation.
{"title":"Nanostructured Aggregates From The Self-Assembly Of Bab Triblock Copolymers With A Hydrophilic Middle Block A In Water","authors":"Jian-Jun Yuan, Shi-Yuan Cheng, Lei Jiang, Lin-Xian Feng, Zhi-Qiang Fan","doi":"10.1142/S1465876303001733","DOIUrl":"https://doi.org/10.1142/S1465876303001733","url":null,"abstract":"The self-assembled nanostructured aggregates with various morphologies, including spherical micelles, worm-like micelles, vesicles and lamellae, have benn observed from the BAB triblock copolymers in water. Here, the polymers used are Polystyrene(PS)43-b-Poly(ethylene oxide)(PEO)45-b-PS43 copolymer with Mw/Mn = 1.48 prepared by ATRP and PS39-b-Poly(4-vinylpyridine)(P4VP)98-b-PS39 copolymer with Mw/Mn = 1.15 synthesized by RAFT. The size and shape of the aggregates are controllable according to some tunable parameters of systems, which affect the balance between three of the major forces acting on the system. These include the stretching of the core-forming blocks, the intercoronal interactions, and the interfacial energy between the solvent and the micellar core. The multiple morphologies were obtained by altering the solvents, solvent composition, copolymers, pH, concentrations, and so on. In addition, the second aggregation behavior of spherical micelles, spherical vesicles, and worm-like micelles was interestedly concerned. It was found that the second aggregation behavior the different complexity for different primary aggregates. For symmetrical primary aggregates, such as spherical micelles and vesicles, the second aggregates appeared symmetrically spherical. In contrast, for unsymmetrical worm-like primary micelles, the second aggregation tended to have unsymmetrical shape. The BAB chain architecture was molecularly suggested to be responsible for the second aggregation.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"93 17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126040904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001678
G. Wiche, J. Goettert, Yujun Song, J. Hormes, C. Kumar
We have developed two fabrication routes for functional micro devices using SU-8/nanoparticle composites. In the first route, patterning of a 0.5% nanoparticle/SU-8 composite resulted in magnetic and luminescent polymeric microstructures. In the second route, a 42% nanoparticle/SU-8 composite was patterned followed by sintering to obtain free standing ceramic microstructures with aspect ratios as high as 16.
{"title":"Functional Micro Devices Using 'Nanoparticle-Photoresist' Composites","authors":"G. Wiche, J. Goettert, Yujun Song, J. Hormes, C. Kumar","doi":"10.1142/S1465876303001678","DOIUrl":"https://doi.org/10.1142/S1465876303001678","url":null,"abstract":"We have developed two fabrication routes for functional micro devices using SU-8/nanoparticle composites. In the first route, patterning of a 0.5% nanoparticle/SU-8 composite resulted in magnetic and luminescent polymeric microstructures. In the second route, a 42% nanoparticle/SU-8 composite was patterned followed by sintering to obtain free standing ceramic microstructures with aspect ratios as high as 16.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125868805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001496
H. B. Liu, F. Chollet
This paper describes a new type of optical switch, named as SWOMS (Self-latching Waveguides Optical MEMS Switch). The SWOMS is based on a novel micromachined bistable self-latching structure, which is fabricated on a SOI (silicon-on-insulator) wafer with a 35μm top silicon layer, and with polymer waveguides attached on it. Comparing to existing moving waveguide switches, SWOMS has some unique promising features such as gap-elimination and self-latching. Here, the structure, principle, and fabrication of SWOMS will be introduced.
{"title":"Optical Switch Based On Moving Polymer Waveguides And Self-Latching Structure","authors":"H. B. Liu, F. Chollet","doi":"10.1142/S1465876303001496","DOIUrl":"https://doi.org/10.1142/S1465876303001496","url":null,"abstract":"This paper describes a new type of optical switch, named as SWOMS (Self-latching Waveguides Optical MEMS Switch). The SWOMS is based on a novel micromachined bistable self-latching structure, which is fabricated on a SOI (silicon-on-insulator) wafer with a 35μm top silicon layer, and with polymer waveguides attached on it. Comparing to existing moving waveguide switches, SWOMS has some unique promising features such as gap-elimination and self-latching. Here, the structure, principle, and fabrication of SWOMS will be introduced.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124091622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001873
M. Küchler, T. Otto, T. Gessner, F. Ebling, H. Schröder
The paper deals with the development of silicon tools and an appropriate hot embossing technology for polymers. With this technology, high quality embossing of optical or fluidic structure for high precision requirements in a batch process is possible thereby reducing system costs. Possible usage is the production of Micro Electro Mechanical Systems (MEMS) for optical or fluidic applications. This could be sensors for chemical analysis of liquids or BioMEMS. Further promising applications are multifunctional printed circuit boards (PCB) or micro cooler. Up to now for coarser dimensions the use of conventional made (e.g. miling) steel tools is common. For forming of smallest structures down to the sub-micrometer range with excellent surface roughness LIGA technology is applied. However, in order to reduce the system costs LIGA tools shall be substituted by silicon tools. Deep reactive ion etching (DRIE) is used to fabricate such an embossing tools allowing complex geometrical figures. For fluidics or optic...
{"title":"Hot Embossing For Mems Using Silicon Tools","authors":"M. Küchler, T. Otto, T. Gessner, F. Ebling, H. Schröder","doi":"10.1142/S1465876303001873","DOIUrl":"https://doi.org/10.1142/S1465876303001873","url":null,"abstract":"The paper deals with the development of silicon tools and an appropriate hot embossing technology for polymers. With this technology, high quality embossing of optical or fluidic structure for high precision requirements in a batch process is possible thereby reducing system costs. Possible usage is the production of Micro Electro Mechanical Systems (MEMS) for optical or fluidic applications. This could be sensors for chemical analysis of liquids or BioMEMS. Further promising applications are multifunctional printed circuit boards (PCB) or micro cooler. Up to now for coarser dimensions the use of conventional made (e.g. miling) steel tools is common. For forming of smallest structures down to the sub-micrometer range with excellent surface roughness LIGA technology is applied. However, in order to reduce the system costs LIGA tools shall be substituted by silicon tools. Deep reactive ion etching (DRIE) is used to fabricate such an embossing tools allowing complex geometrical figures. For fluidics or optic...","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127907431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-09-01DOI: 10.1142/S1465876303001824
Il-Woo Jung, Jaehong Park, Byoung-Doo Choi, Jongpal Kim, Sangjun Park, S. Paik, D. Cho
This paper presents a single-wafer, large-displacement electrostatic vertical motion actuator, using the extended sacrifical bulk micromachining (SBM) technology. The driving scheme is a torsional lever mechanism that achieves a large vertical displacement, which is achieved using a low driving voltage by novel small-gap vertical combs. The extended SBM process is used to fabricate combs that have different heights. These combs achieve about 10 μm vertical motion at 60 volts. The vertical displacement on the opposite end is 30 μm by the 3:1 lever ratio. A new process for electrode isolation is also developed for hign aspect ratio microstructure. The process uses doping sidewalls for an effective PN junction. The developed process is used to fabricated a single on-off optical switch as well as a 4×4 array switches. The switches use shutters for optical switching. The fabricated optical switch has a 2.3 degree of tilt angle at a 60 V driving voltage. The 2.5 degree tilt angle gives 30 μm displacement at the optical shutter. Optical signal off to on time is 0.09 ms and optical signal on to off time is 0.10 ms, which is sufficiently fast for optical switch applications.
{"title":"New Vertical Array Actuators Using Extended Sbm And Deep Pn Junction Isolation","authors":"Il-Woo Jung, Jaehong Park, Byoung-Doo Choi, Jongpal Kim, Sangjun Park, S. Paik, D. Cho","doi":"10.1142/S1465876303001824","DOIUrl":"https://doi.org/10.1142/S1465876303001824","url":null,"abstract":"This paper presents a single-wafer, large-displacement electrostatic vertical motion actuator, using the extended sacrifical bulk micromachining (SBM) technology. The driving scheme is a torsional lever mechanism that achieves a large vertical displacement, which is achieved using a low driving voltage by novel small-gap vertical combs. The extended SBM process is used to fabricate combs that have different heights. These combs achieve about 10 μm vertical motion at 60 volts. The vertical displacement on the opposite end is 30 μm by the 3:1 lever ratio. A new process for electrode isolation is also developed for hign aspect ratio microstructure. The process uses doping sidewalls for an effective PN junction. The developed process is used to fabricated a single on-off optical switch as well as a 4×4 array switches. The switches use shutters for optical switching. The fabricated optical switch has a 2.3 degree of tilt angle at a 60 V driving voltage. The 2.5 degree tilt angle gives 30 μm displacement at the optical shutter. Optical signal off to on time is 0.09 ms and optical signal on to off time is 0.10 ms, which is sufficiently fast for optical switch applications.","PeriodicalId":331001,"journal":{"name":"Int. J. Comput. Eng. Sci.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127773235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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